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76 条记录 (耗时 0.023 秒)

    Multiport memory with improved timing of word line selection
    32.
    发明授权
    Multiport memory with improved timing of word line selection 失效
    具有改进字线选择时序的多端口存储器

    公开(公告)号：US5007028A

    公开(公告)日：1991-04-09

    申请号：US552851

    申请日：1990-07-16

    申请人： Shigeo Ohshima ,  Haruki Toda ,  Tatsuo Ikawa

    发明人： Shigeo Ohshima ,  Haruki Toda ,  Tatsuo Ikawa

    IPC分类号： G11C11/401 ,  G11C7/10 ,  G11C11/407

    CPC分类号： G11C7/1075

    摘要： This invention provides a multiport memory including a storage section A having bit lines BL and BL, a word line WL, a data transfer gate .phi.DT, and a dynamic memory cell Cs, and a serial port B having a serial access function in a column direction of the storage section, wherein the memory includes a circuit for disabling a word line signal WL for selecting one word line under the conditions that a row address strobe signal RAS is raised in a transfer cycle in which data held by the memory cell is transferred to the serial port, and that the data transfer to the serial port is completed by the data transfer gate .phi.DT.

    Semiconductor memory having a barrier transistor between a bit line and a sensing amplifier
    33.
    发明授权
    Semiconductor memory having a barrier transistor between a bit line and a sensing amplifier 失效
    具有在位线和感测放大器之间的势垒晶体管的半导体存储器

    公开(公告)号：US4794569A

    公开(公告)日：1988-12-27

    申请号：US863190

    申请日：1986-05-14

    申请人： Hiroshi Sahara ,  Haruki Toda ,  Shigeo Ohshima

    发明人： Hiroshi Sahara ,  Haruki Toda ,  Shigeo Ohshima

    IPC分类号： G11C11/409 ,  G11C11/4094 ,  G11C11/4096 ,  G11C7/00

    CPC分类号： G11C11/4096 ,  G11C11/4094

    摘要： In this invention, in a sensing circuit of a dynamic memory, barrier transistors are provided between the bit lines and the sensing amplifier. A circuit is provided that, on sensing and on data transfer, changes the gate potential of the barrier transistors so that during the sensing operation the barrier transistors are temporarily turned OFF, so that sensing can be carried out with high sensitivity, as the sensing system is not affected by the parasitic capacitance of the bit lines, while, on data transfer to the input/output lines, the gate potential of the barrier transistors is raised to a level greater than a value reached by adding the threshold value of the MOS transistors to the power source voltage, so that the conductance of the barrier transistors is increased, thereby speeding up the presensing of the input/output lines in the sensing circuit.

    摘要翻译： 在本发明中，在动态存储器的感测电路中，在位线和感测放大器之间设置有阻挡晶体管。 提供了一种电路，其在感测和数据传输时改变势垒晶体管的栅极电位，使得在感测操作期间，阻挡晶体管暂时断开，使得可以以高灵敏度进行感测，作为感测系统 不受位线的寄生电容的影响，而在向输入/输出线路传输数据时，势垒晶体管的栅极电位升高到大于通过将MOS晶体管的阈值相加而达到的值 以使得阻挡晶体管的电导增加，从而加速感测电路中的输入/输出线的预置。

    Method of programming a non-volatile memory device
    36.
    发明授权
    Method of programming a non-volatile memory device 有权
    编程非易失性存储器件的方法

    公开(公告)号：US07911823B2

    公开(公告)日：2011-03-22

    申请号：US12123827

    申请日：2008-05-20

    申请人： Takuya Futatsuyama ,  Koji Hosono ,  Toshiaki Edahiro ,  Naoya Tokiwa ,  Kazushige Kanda ,  Shigeo Ohshima

    发明人： Takuya Futatsuyama ,  Koji Hosono ,  Toshiaki Edahiro ,  Naoya Tokiwa ,  Kazushige Kanda ,  Shigeo Ohshima

    IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C7/02 ,  G11C7/12 ,  G11C8/08

    CPC分类号： G11C11/36

    摘要： A method of programming a non-volatile memory device with memory cells formed of variable resistance elements and disposed between word lines and bit lines, includes: previously charging a selected word line and a selected bit line together with a non-selected word line and a non-selected bit line up to a certain voltage; and further charging the selected word line and the non-selected bit line up to a program voltage higher than the certain voltage and a program-block voltage, respectively, and simultaneously discharging the selected bit line.

    摘要翻译： 一种使用由可变电阻元件形成并且设置在字线和位线之间的存储单元来编程非易失性存储器件的方法包括：预先对所选择的字线和所选择的位线以及未选择的字线和 非选择位线达到一定电压; 并且进一步对所选字线和未选择的位线进行充电，直到分别高于特定电压和编程块电压的编程电压，并同时对所选择的位线进行放电。

    Layout data generation equipment of semiconductor integrated circuit, data generation method and manufacturing method of semiconductor device
    38.
    发明授权
    Layout data generation equipment of semiconductor integrated circuit, data generation method and manufacturing method of semiconductor device 失效
    半导体集成电路的布局数据生成设备，半导体器件的数据生成方法和制造方法

    公开(公告)号：US07823105B2

    公开(公告)日：2010-10-26

    申请号：US11945537

    申请日：2007-11-27

    申请人： Shigeo Ohshima ,  Kiminobu Suzuki ,  Kazuhiro Yamada ,  Takamichi Arizono

    发明人： Shigeo Ohshima ,  Kiminobu Suzuki ,  Kazuhiro Yamada ,  Takamichi Arizono

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5068

    摘要： A layout-data generation equipment includes a logic circuit designing section which designs a logic circuit based on information of the specifications of a semiconductor integrated circuit, a layout-data generation section which creates layout-data based on the logic circuit, a resistance information extraction section which extracts resistance information of a wire from the layout-data, a circuit simulation execution section which executes a circuit simulation, an identification section of current direction which identifies a direction of a current in the wire based on the resistance information of a wire and an execution result of the circuit simulation, a verification section which verifies whether layout-data of the wire breaks a design rule, the design rule being extracted from the information of the specifications of a semiconductor integrated circuit and the verification section generates this verification result, and a data output section which outputs the layout-data.

    摘要翻译： 布局数据生成装置包括逻辑电路设计部，其基于半导体集成电路的规格信息设计逻辑电路，基于逻辑电路生成布局数据的布局数据生成部，电阻信息提取 从布局数据中提取线的电阻信息的部分，执行电路仿真的电路仿真执行部，基于电线的电阻信息识别线中的电流方向的电流方向的识别部，以及 电路仿真的执行结果，验证电线的布局数据是否断开设计规则的验证部分，从半导体集成电路的规格信息中提取设计规则，并且验证部分生成该验证结果， 以及输出布局数据的数据输出部。

    Non-volatile memory device
    39.
    发明授权
    Non-volatile memory device 有权
    非易失性存储器件

    公开(公告)号：US07817457B2

    公开(公告)日：2010-10-19

    申请号：US12132972

    申请日：2008-06-04

    申请人： Naoya Tokiwa ,  Kazushige Kanda ,  Toshiaki Edahiro ,  Koji Hosono ,  Takuya Futatsuyama ,  Shigeo Ohshima

    发明人： Naoya Tokiwa ,  Kazushige Kanda ,  Toshiaki Edahiro ,  Koji Hosono ,  Takuya Futatsuyama ,  Shigeo Ohshima

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0007 ,  G11C13/0097 ,  G11C2013/0092 ,  G11C2213/32 ,  G11C2213/72

    摘要： According to one embodiment, a nonvolatile memory device includes: a memory cell array including memory cells each having a variable resistance element for nonvolatilely storing data identified by an electrically rewritable resistance value; a first data latch storing write and erase data to be written on a given group of memory cells of the memory cell array for a write and erase operation; and a second data latch storing reference data for performing a compensation operation of the given group to compensate write and erase disturbance accompanied by the write or erase operation.

    摘要翻译： 根据一个实施例，非易失性存储器件包括：存储单元阵列，其包括各自具有用于非易失性地存储由电可重写电阻值识别的数据的可变电阻元件的存储单元; 存储要写入存储单元阵列的给定组的存储单元的用于写入和擦除操作的写入和擦除数据的第一数据锁存器; 以及第二数据锁存器，存储用于执行给定组的补偿操作以补偿伴随着写入或擦除操作的写入和擦除干扰的参考数据。