公开(公告)号：US20210053179A1

公开(公告)日：2021-02-25

申请号：US16549153

申请日：2019-08-23

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Pin-Chuan Su ,  Jeng-Chi Lin ,  Guan-Yi Lee ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B37/20 ,  H01L21/306 ,  H01L21/321

Abstract: An embodiment is a polishing pad including a top pad and a sub pad that is below and contacting the top pad. The top pad includes top grooves along a top surface and microchannels extending from the top grooves to a bottom surface of the top pad. The sub pad includes sub grooves along a top surface of the sub pad.

公开(公告)号：US20210016415A1

公开(公告)日：2021-01-21

申请号：US16516006

申请日：2019-07-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Hao Kung ,  Shang-Yu Wang ,  Ching-Hsiang Tsai ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B37/10 ,  B24B37/04 ,  B24B37/32 ,  H01L21/321 ,  H01L21/3105

Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

公开(公告)号：US20200043747A1

公开(公告)日：2020-02-06

申请号：US16207802

申请日：2018-12-03

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yen-Ting Chen ,  Chun-Hao Kung ,  Tung-Kai Chen ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  C09K3/14 ,  B01F13/08 ,  B24B37/04 ,  B24B57/02

Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.

公开(公告)号：US20190122942A1

公开(公告)日：2019-04-25

申请号：US16221717

申请日：2018-12-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Ting Yen ,  Chi-Ming Tsai ,  Hui-Chi Huang

IPC: H01L21/66 ,  H01L21/02 ,  G01N21/65 ,  G01N15/02 ,  G01N21/53 ,  G01N21/55 ,  G01N21/3563 ,  G01N21/94 ,  H01L21/306 ,  G01N15/14 ,  G01N21/59 ,  G01N21/95

Abstract: A method includes performing Chemical Mechanical Polish (CMP) on a wafer, placing the wafer on a chuck, performing a post-CMP cleaning on the wafer, and determining cleanness of the wafer when the wafer is located on the chuck.

公开(公告)号：US20190096661A1

公开(公告)日：2019-03-28

申请号：US16203842

申请日：2018-11-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hui-Chi Huang

IPC: H01L21/02 ,  H01L21/67

Abstract: A method of performing a post Chemical Mechanical Polish (CMP) cleaning includes picking up the wafer, spinning a cleaning solution contained in a cleaning tank, and submerging the wafer into the cleaning solution, with the cleaning solution being spun when the wafer is in the cleaning solution. After the submerging the wafer into the cleaning solution, the wafer is retrieved out of the cleaning solution.

公开(公告)号：US20180247838A1

公开(公告)日：2018-08-30

申请号：US15968316

申请日：2018-05-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Ping Lee ,  Hui-Chi Huang

IPC: H01L21/67 ,  B24B37/34 ,  H01L21/02

CPC classification number: H01L21/67051 ,  B24B37/34 ,  H01L21/02071 ,  H01L21/67028 ,  H01L21/67046

Abstract: Methods for cleaning integrated circuit (IC) wafers after undergoing planarization processes (for example, chemical mechanical polishing processes) and associated cleaning units and/or planarization units are disclosed herein. An exemplary method includes configuring outlet areas of spray nozzles to deliver a cleaning solution to optimal locations of the IC wafer and delivering the cleaning solution via the spray nozzles having the configured outlet areas to the IC wafer. Each of the outlet areas is configured to achieve a particular velocity of the cleaning solution exiting the outlet area, such that the cleaning solution reaches a particular location of the IC wafer depending on the particular velocity. In some implementations, the cleaning solution enters inlet areas of the spray nozzles at the same flow rate and the cleaning solution exits the outlet areas of the spray nozzles at different velocities.

公开(公告)号：US20130146224A1

公开(公告)日：2013-06-13

申请号：US13758658

申请日：2013-02-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chu-An Lee ,  Hui-Chi Huang ,  Peng-Chung Jangjian

IPC: H01L21/465

CPC classification number: B24B37/20 ,  B24B37/013 ,  B24B37/205 ,  B24B49/12 ,  G05B2219/49085 ,  H01J37/32963 ,  H01L21/3212 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure provides a chemical mechanical polishing (CMP) system. The CMP system includes a pad designed for wafer polishing, a motor driver coupled with the pad and designed to drive the pad during the wafer polishing, and a controller coupled with the motor driver and designed to control the motor driver. The CMP system further includes an in-situ rate monitor designed to collect polishing data from a wafer on the pad, determine CMP endpoint based on a life stage of the pad, and provide the CMP endpoint to the controller.

Abstract translation: 本公开提供了一种化学机械抛光（CMP）系统。 CMP系统包括设计用于晶片抛光的焊盘，与焊盘耦合并设计成在晶片抛光期间驱动焊盘的电动机驱动器，以及与电动机驱动器耦合并设计成控制电动机驱动器的控制器。 CMP系统还包括原位速率监测器，其设计用于收集来自焊盘上的晶片的抛光数据，基于焊盘的寿命阶段确定CMP端点，并将CMP端点提供给控制器。