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公开(公告)号：US10468589B2
公开(公告)日：2019-11-05
申请号：US16142112
申请日：2018-09-26
Applicant: TDK CORPORATION
Inventor： Tomoyuki Sasaki , Tatsuo Shibata , Katsuyuki Nakada , Yoshitomo Tanaka
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
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32.发明授权公开(公告)号：US10453482B2
公开(公告)日：2019-10-22
申请号：US15988707
申请日：2018-05-24
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by FeγX1-γ. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and γ satisfies 0
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公开(公告)号：US09017831B2
公开(公告)日：2015-04-28
申请号：US13779048
申请日：2013-02-27
Applicant: TDK Corporation
Inventor： Katsuyuki Nakada , Takahiro Suwa , Kuniyasu Ito , Yuji Kakinuma , Masato Takahashi
CPC classification number: H01F1/0036 , G01R33/091 , G01R33/093 , G11B5/3903 , G11C11/16 , G11C11/161 , H01F10/3268 , H01F10/3286 , H01F10/3295 , Y10T428/1107 , Y10T428/1121
Abstract: A thin-film magnetic oscillation element includes a pinned magnetic layer, a free magnetic layer, a nonmagnetic spacer layer provided between the pinned magnetic layer and the free magnetic layer, and a pair of electrodes, in which the easy axis of magnetization of the pinned magnetic layer lies in an in-plane direction of the plane of the pinned magnetic layer, and the easy axis of magnetization of the free magnetic layer lies in a direction normal to the plane of the free magnetic layer. Preferably, the relationship between the saturation magnetization Ms and the magnetic anisotropy field Ha of the free magnetic layer satisfies 1.257 Ms
Abstract translation: 薄膜磁振动元件包括钉扎磁性层，自由磁性层，设置在钉扎磁性层和自由磁性层之间的非磁性间隔层，以及一对电极，其中固定的易磁化轴 磁性层位于被钉扎的磁性层的平面的面内方向，自由磁性层的易磁化轴位于与自由磁性层的平面垂直的方向上。 优选地，自由磁性层的饱和磁化强度Ms和磁各向异性场Ha之间的关系满足1.257 Ms
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公开(公告)号：US12274184B2
公开(公告)日：2025-04-08
申请号：US17631571
申请日：2020-06-24
Applicant: TDK CORPORATION
Inventor： Shinto Ichikawa , Tsuyoshi Suzuki , Katsuyuki Nakada , Tomoyuki Sasaki
Abstract: In the magnetoresistance effect element according to one aspect, the metal oxide constituting the metal oxide layer has the ratio of oxygen higher than the total ratio of metal when the composition is expressed in the stoichiometric composition; and the resistivity of the metal oxide layer is higher than that of the tunnel barrier layer.
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公开(公告)号：US11967348B2
公开(公告)日：2024-04-23
申请号：US18019919
申请日：2020-12-21
Applicant: TDK CORPORATION
Inventor： Katsuyuki Nakada , Kazuumi Inubushi , Shinto Ichikawa
CPC classification number: G11B5/3906 , G01R33/093 , H10N50/10 , H10N50/85 , G11B2005/3996
Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer has an alloy obtained by adding an additive element to a Heusler alloy. The additive element is any one or more elements selected from the group consisting of H, He, N, O, F, Ne, P, Cl, Ar, Kr, and Xe.
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Patent Agency Ranking
公开(公告)号：US11730063B2
公开(公告)日：2023-08-15
申请号：US17115283
申请日：2020-12-08
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada , Shinto Ichikawa
Abstract: The magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy layer including a crystal region and an amorphous region.
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公开(公告)号：US11728082B2
公开(公告)日：2023-08-15
申请号：US17214081
申请日：2021-03-26
Applicant: TDK CORPORATION
Inventor： Tsuyoshi Suzuki , Shinto Ichikawa , Katsuyuki Nakada
CPC classification number: H01F10/3254 , G11B5/3909 , G11B5/3967 , H03H7/258
Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, wherein a crystal structure of the non-magnetic layer is a spinel structure, wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure, and wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W.
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公开(公告)号：US11621392B2
公开(公告)日：2023-04-04
申请号：US17480599
申请日：2021-09-21
Applicant: TDK CORPORATION
Inventor： Shinto Ichikawa , Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.
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公开(公告)号：US11362270B2
公开(公告)日：2022-06-14
申请号：US17060299
申请日：2020-10-01
Applicant: TDK CORPORATION
Inventor： Shinto Ichikawa , Katsuyuki Nakada , Tomoyuki Sasaki
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.
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公开(公告)号：US11309115B2
公开(公告)日：2022-04-19
申请号：US16777036
申请日：2020-01-30
Applicant: TDK Corporation
Inventor： Katsuyuki Nakada
IPC: H01F10/193 , H01F10/32 , G01R33/09
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer contains a metal compound having a half-Heusler type crystal structure, the metal compound contains a functional material, and X atoms, Y atoms, and Z atoms which form a unit lattice of the half-Heusler type crystal structure, and the functional material has an atomic number lower than an atomic number of any of the X atoms, the Y atoms, and the Z atoms.
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