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    Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory
    32.
    发明授权
    Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory 有权

    公开(公告)号：US11056641B2

    公开(公告)日：2021-07-06

    申请号：US16578714

    申请日：2019-09-23

    Applicant: TDK CORPORATION

    Inventor： Atsushi Tsumita ,  Yohei Shiokawa ,  Tomoyuki Sasaki

    IPC: H01L43/04 ,  H01L27/22 ,  G11C11/16 ,  H01F10/32 ,  G11C11/18 ,  H01L43/10

    Abstract: A spin-orbit-torque magnetization rotational element includes: a first ferromagnetic layer; and a spin-orbit torque wiring in which a first surface faces the first ferromagnetic layer and a long axis extends in a first direction when viewed in plan view from a lamination direction of the first ferromagnetic layer, wherein the first surface spreads along a reference plane orthogonal to the lamination direction of the first ferromagnetic layer, the spin-orbit torque wiring contains a first virtual cross-section which passes through a first end of the first ferromagnetic layer in the first direction and is orthogonal to the first direction and a second virtual cross-section which passes through a second end of the first ferromagnetic layer in the first direction and is orthogonal to the first direction, and an area of the first virtual cross-section is different from an area of the second virtual cross-section.

    Spin current magnetization rotation magnetoresistance effect element, and magnetic memory
    33.
    发明授权
    Spin current magnetization rotation magnetoresistance effect element, and magnetic memory 有权

    公开(公告)号：US10923649B2

    公开(公告)日：2021-02-16

    申请号：US16413066

    申请日：2019-05-15

    Applicant: TDK CORPORATION

    Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa

    IPC: H01L43/04 ,  H01L43/06 ,  H01L27/22 ,  H01F10/32 ,  H01L43/10 ,  G11C11/18 ,  G11C11/16

    Abstract: There is provided a spin current magnetization rotation magnetoresistance effect element that can reduce generation of a magnetic field influencing other elements.
    The spin current magnetization rotation magnetoresistance effect element in which a spin-orbit torque wiring layer, a first ferromagnetic layer, an antiferromagnetic coupling layer, a second ferromagnetic layer, a nonmagnetic layer, and a magnetization reference layer are disposed in an order, wherein a magnitude of the product of the saturation magnetization of the first ferromagnetic layer and the film thickness of the first ferromagnetic layer is larger than a magnitude of the product of the saturation magnetization of the second ferromagnetic layer and the film thickness of the second ferromagnetic layer.

    Magnetic memory
    35.
    发明授权
    Magnetic memory 有权

    公开(公告)号：US10205088B2

    公开(公告)日：2019-02-12

    申请号：US15711506

    申请日：2017-09-21

    Applicant: TDK CORPORATION

    Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa ,  Atsushi Tsumita

    IPC: H01L43/04 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14 ,  G11C11/18

    Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

    Spin element and reservoir element
    39.
    发明授权
    Spin element and reservoir element 有权

    公开(公告)号：US11751488B2

    公开(公告)日：2023-09-05

    申请号：US16981310

    申请日：2020-01-24

    Applicant: TDK CORPORATION

    Inventor： Kosuke Hamanaka ,  Tomoyuki Sasaki ,  Yohei Shiokawa

    IPC: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

    CPC classification number: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

    Abstract: A spin element according to the present embodiment includes a wiring, a laminate including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part with the first ferromagnetic layer therebetween in a plan view in a lamination direction, and an intermediate layer which is in contact with the wiring and is between the first conductive part and the wiring, wherein a diffusion coefficient of a second element including the intermediate layer with respect to a first element including the wiring is smaller than a diffusion coefficient of a third element constituting the first conductive part with respect to the first element or a diffusion coefficient of the third element including the first conductive part with respect to the second element constituting the wiring is smaller than a diffusion coefficient of the third element with respect to the first element constituting the intermediate layer.

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