Ceramic electronic device
    35.
    发明授权

    公开(公告)号:US11984266B2

    公开(公告)日:2024-05-14

    申请号:US17683602

    申请日:2022-03-01

    CPC classification number: H01G4/1227 H01G4/008 H01G4/012 H01G4/30

    Abstract: A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABO3 as a main component. The external electrode includes a baked electrode layer having a first region and a second region. The first region is contacted with the end surface of the element body and located near a joint boundary with the element body. The second region is located outside the first region and constitutes an outer surface of the baked electrode layer. The first region includes a glass frit including at least B and Si. The second region includes an Al based oxide mainly including Al.

    Ceramic electronic device
    37.
    发明授权

    公开(公告)号:US11823841B2

    公开(公告)日:2023-11-21

    申请号:US17683645

    申请日:2022-03-01

    CPC classification number: H01G4/2325 H01G4/1209 H01G4/248 H01G4/30

    Abstract: A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABO3 as a main component. The external electrode includes a baked electrode layer having a first region and a second region. The first region is contacted with the end surface of the element body and located near a joint boundary with the element body. The second region is located outside the first region and constitutes an outer surface of the baked electrode layer. The first region includes a glass frit including at least B, Zn, and Si. The second region includes an oxide having a higher melting point than Cu.

    Electronic device
    38.
    发明授权

    公开(公告)号:US11646163B2

    公开(公告)日:2023-05-09

    申请号:US17228822

    申请日:2021-04-13

    CPC classification number: H01G4/40 H01F27/28 H01G4/224 H01G4/228 H01G4/38

    Abstract: An electronic device includes first and second capacitors, a case, a coil, and first to fourth conductive terminals. The first capacitor includes first and second terminal electrodes. The second capacitor includes third and fourth terminal electrodes. The case includes an accommodation recess for accommodating the first and second capacitors. The coil is separated from the first and second capacitors by a part of the case and disposed outside the accommodation recess. The first terminal is connected to the first electrode and partly disposed on a mounting-side bottom surface of the case. The second terminal is connected to one end of the coil and the second electrode and partly disposed on the surface. The third terminal is connected to the other end of the coil and the third electrode and partly disposed on the surface. The fourth terminal is connected to the fourth electrode and partly disposed on the surface.

    Electronic component
    39.
    发明授权

    公开(公告)号:US11646160B2

    公开(公告)日:2023-05-09

    申请号:US17463964

    申请日:2021-09-01

    Inventor: Toshihiro Iguchi

    CPC classification number: H01G4/30 H01G4/2325 H01G4/12

    Abstract: An electronic component includes an element body including a side surface and an end surface adjacent to each other, and an external electrode disposed on the side surface and the end surface. The external electrode includes a metal layer disposed on the side surface and the end surface and made of sintered copper, a conductive resin layer that is disposed on the metal layer in such a manner that a partial region of the metal layer is exposed and contains a plurality of copper particles and a resin, and a plating layer disposed on the partial region of the metal layer and the conductive resin layer. The conductive resin includes a first portion located on the side surface. The plating layer includes a second portion located on the side surface. A thickness of the first portion is smaller than a thickness of the second portion.

    Dielectric composition and electronic device

    公开(公告)号:US11501919B2

    公开(公告)日:2022-11-15

    申请号:US17119212

    申请日:2020-12-11

    Abstract: A dielectric composition includes main phases and Ca-RE-Si—O segregation phases. The main phases include a main component expressed by ABO3. “A” includes at least one selected from barium and calcium. “B” includes at least one selected from titanium and zirconium. “RE” represents at least one of rare earth elements. A molar ratio of (Si/Ca) is larger than one. A molar ratio of (Si/RE) is larger than one, provided that the molar ratio of (Si/RE) is a molar ratio of silicon included in the segregation phases to the rare earth elements included therein. An average length of major axes of the segregation phases is 1.30-2.80 times as large as an average particle size of the main phases. An average length of minor axes of the segregation phases is 0.21-0.48 times as large as an average particle size of the main phases.

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