Ceramic electronic device
    1.
    发明授权

    公开(公告)号:US11823842B2

    公开(公告)日:2023-11-21

    申请号:US17683897

    申请日:2022-03-01

    CPC classification number: H01G4/2325 H01G4/1227 H01G4/30

    Abstract: A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABO3 as a main component. The external electrode includes a conductor and a glass frit diffused in the conductor. The glass frit includes B, Si, Ba, and Zn. A boundary layer is present at an end of the ceramic layer in contact with the external electrode on the end surface of the element body and comprises an oxide including Ba, Zn, and Si.

    Dielectric composition and electronic component

    公开(公告)号:US11367571B2

    公开(公告)日:2022-06-21

    申请号:US17115210

    申请日:2020-12-08

    Inventor: Toshihiro Iguchi

    Abstract: A dielectric composition includes a main phase and a Ca—Zr—Si—O segregation phase. The main phase includes a main component expressed by ABO3. “A” includes at least one selected from calcium and strontium. “B” includes at least one selected from zirconium, titanium, hafnium, and manganese. The Ca—Zr—Si—O segregation phase includes at least calcium, zirconium, and silicon. The Ca—Zr—Si—O segregation phase includes 0.12-0.50 parts by mol of zirconium, provided that a total of calcium, strontium, silicon, and zirconium included in the Ca—Zr—Si—O segregation phase is 1 part by mol.

    Dielectric composition and electronic component

    公开(公告)号:US11114244B2

    公开(公告)日:2021-09-07

    申请号:US16783209

    申请日:2020-02-06

    Inventor: Toshihiro Iguchi

    Abstract: Provided is a dielectric composition which includes, as a main component, a complex oxide represented by a general formula AaBbC4O15+α and having a tungsten bronze structure, wherein “A” includes at least Ba, “B” includes at least Zr, “C” includes at least Nb, “a” is 3.05 or higher, and “b” is 1.01 or higher. In the dielectric composition, when the total number of atoms occupying M2 sites in the tungsten bronze structure is set to 1, the proportion of “B” is 0.250 or higher. In addition, in the dielectric composition, an X-ray diffraction peak of a (410) plane of the tungsten bronze structure is splitted into two, and an integrated intensity ratio of an integrated intensity of a high-angle side peak of the X-ray diffraction peak with respect to an integrated intensity of a low-angle side peak of the X-ray diffraction peak is 0.125 or higher.

    MULTILAYER CERAMIC ELECTRONIC COMPONENT
    5.
    发明申请

    公开(公告)号:US20190304681A1

    公开(公告)日:2019-10-03

    申请号:US16270975

    申请日:2019-02-08

    Inventor: Toshihiro Iguchi

    Abstract: A multilayer ceramic electronic component such as a multilayer ceramic capacitor capable of maintaining insulation properties even when a current is passed through the capacitor after an occurrence of a short-circuit due to, for example, a high voltage or a high current is provided. A multilayer ceramic electronic component including an element body 4 formed by laminating dielectric layers 10 and internal electrode layers 12 alternately. The internal electrode layers contains copper and/or silver as a main component. The dielectric voidage is lower than the internal electrode voidage.

    Ceramic electronic device
    9.
    发明授权

    公开(公告)号:US11823840B2

    公开(公告)日:2023-11-21

    申请号:US17683518

    申请日:2022-03-01

    CPC classification number: H01G4/2325 H01G4/1227 H01G4/30

    Abstract: A ceramic electronic device includes an element body and an external electrode. The element body is formed by laminating a ceramic layer and an internal electrode layer. The external electrode is electrically connected to at least one end of the internal electrode layer. At least a part of a joint boundary between the electrode layer and the ceramic layer includes an interface protrusion on the external electrode side. The interface protrusion is made of an oxide.

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