公开(公告)号：US20060191555A1

公开(公告)日：2006-08-31

申请号：US11203092

申请日：2005-08-15

申请人： Atsushi Yoshida ,  Kotaro Fujimoto ,  Takeshi Shimada

发明人： Atsushi Yoshida ,  Kotaro Fujimoto ,  Takeshi Shimada

IPC分类号： B08B6/00 ,  B08B9/00

CPC分类号： B08B7/0035

摘要： To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).

摘要翻译： 为了提供一种用于金属膜的蚀刻装置的清洁方法，其有效地去除在蚀刻处理室中沉积的蚀刻残留物，确保蚀刻性能的再现性，并且使蚀刻处理室保持在低灰尘发射状态。 每次蚀刻具有金属膜的工件（S 1）时，通过用虚设衬底（S 2）代替工件来清洁真空室的内部，使用氧气进行等离子体处理的第一步骤（O < 2）和四氟化碳（CF 4 SO 4）以除去碳基沉积堆（S 3），并且使用三氯化硼（BCl 3）进行等离子体处理的第二步骤 和氯（Cl 2 O 2），以除去第一步骤不能除去的残余物和金属膜的蚀刻残留物（S 4）。

公开(公告)号：US5374399A

公开(公告)日：1994-12-20

申请号：US902016

申请日：1992-06-18

申请人： Tokihiro Tsukamoto ,  Takeshi Shimada

发明人： Tokihiro Tsukamoto ,  Takeshi Shimada

IPC分类号： G01N21/03 ,  G01N21/05 ,  G01N21/35 ,  G01N21/3504 ,  G01N21/51 ,  G01N21/61 ,  G01N21/85 ,  G01N17/00

CPC分类号： G01N21/05 ,  G01N2021/8578 ,  G01N2021/8585

摘要： An improved sample cell for use in a gas analyzer has a sample body with a measuring optical path extending traverse to the cell body. A sample gas inlet port is positioned at one end of the cell body, and a sample gas outlet port is positioned at the other end of the cell body. Porous plates can extend across the cell body, and appropriately-dimensioned apertures in the porous plates can ensure a consistent flow path of gas across the optical path without any stagnated flow patterns.

摘要翻译： 用于气体分析器的改进的样品池具有样品体，其具有横穿细胞体的测量光路。 样品气体入口位于电池体的一端，样品气体出口位于电池体的另一端。 多孔板可以延伸穿过电池体，并且多孔板中的适当尺寸的孔可以确保气体在光路上的一致的流动路径，而没有任何停滞的流动模式。

公开(公告)号：US20120103933A1

公开(公告)日：2012-05-03

申请号：US13011019

申请日：2011-01-21

申请人： Kentaro YAMADA ,  Takeshi Shimada ,  Takahiro Abe

发明人： Kentaro YAMADA ,  Takeshi Shimada ,  Takahiro Abe

IPC分类号： G11B5/31 ,  C23F1/00

CPC分类号： G11B5/3163 ,  C23F4/00 ,  H01F41/34

摘要： In a plasma processing method of dry-etching of a magnetic film having a thickness of 200 nm to 500 nm, a plasma processing method of dry-etching of a sample having the magnetic film on which a multilayered film including a resist film, an non-organic film underlying the resist film, a Cr film underlying the non-organic film, and an Al2O3 film underlying the Cr film.

摘要翻译： 在对具有200nm〜500nm的厚度的磁性膜进行干法蚀刻的等离子体处理方法中，对具有含有抗蚀剂膜的多层膜的磁性膜的试样的干法蚀刻等离子体处理方法， - 抗蚀剂膜下面的无机膜，非有机膜下面的Cr膜和Cr膜下面的Al 2 O 3膜。

公开(公告)号：US20110113423A1

公开(公告)日：2011-05-12

申请号：US12617592

申请日：2009-11-12

申请人： Kenji Yamamoto ,  Tsutomu Kaneshige ,  Yusuke Shibata ,  Takeshi Shimada

发明人： Kenji Yamamoto ,  Tsutomu Kaneshige ,  Yusuke Shibata ,  Takeshi Shimada

IPC分类号： G06F3/048 ,  G06F9/445

CPC分类号： G06F8/61 ,  G06F3/04817 ,  G06F3/0482 ,  G06F8/60 ,  G06F9/451

摘要： An example method of installing an application onto an apparatus involves displaying an application menu screen comprising a fixed number of menu item display locations, at least one of the menu item display locations displaying a first menu item for an non-installed application. An announcement screen is displayed in response to selection of the first menu item for the non-installed application, the announcement screen comprising a selection item configured to initiate a downloading operation for the non-installed application. The downloading operation is initiated in response to selection of the selection item. The application can be installed/non-installed separately from other applications.

摘要翻译： 将应用程序安装到设备上的示例性方法包括显示包括固定数量的菜单项显示位置的应用菜单屏幕，显示用于未安装应用的第一菜单项的菜单项显示位置中的至少一个。 响应于未安装应用的第一菜单项的选择显示公告屏幕，所述通知屏幕包括被配置为启动未安装应用的下载操作的选择项。 响应于选择项目的选择而启动下载操作。 该应用程序可以与其他应用程序分开安装/未安装。

公开(公告)号：US20110111602A1

公开(公告)日：2011-05-12

申请号：US12694386

申请日：2010-01-27

申请人： Makoto SUYAMA ,  Takeshi Shimada ,  Atsushi Yoshida ,  Yasukiyo Morioka ,  Kota Tanaka

发明人： Makoto SUYAMA ,  Takeshi Shimada ,  Atsushi Yoshida ,  Yasukiyo Morioka ,  Kota Tanaka

IPC分类号： H01L21/3065

CPC分类号： H01L21/31122 ,  H01J37/321 ,  H01L21/32136

摘要： Disclosed is a plasma processing method that excels in mass production consistency as it suppresses the flaking of a reaction product deposited on a portion outside the effective range of a Faraday shield in a vacuum vessel. The plasma processing method, which plasma-processes a sample having a layer made of an etch-resistant material by using a plasma processing apparatus having a discharger and a processor, includes a first step of performing an aging process that is to be performed before etching the sample, a second step of performing etching by plasma-processing the layer that is made of an etch-resistant material and formed on the sample, a third step of stabilizing a film deposited on the inner wall of a chamber forming the processor by performing plasma processing after the second step, and an additional step of repeating the second step and the third step.

摘要翻译： 公开了一种在大规模生产一致性方面优异的等离子体处理方法，因为它抑制沉积在真空容器中法拉第屏蔽有效范围之外的部分上的反应产物的剥落。 通过使用具有放电器和处理器的等离子体处理装置等离子体处理具有由耐蚀刻材料制成的层的样品的等离子体处理方法包括执行蚀刻之前要进行的时效处理的第一步骤 样品，通过等离子体处理由抗蚀刻材料制成并形成在样品上的层进行蚀刻的第二步骤，通过执行沉积在形成处理器的室的内壁上的膜来稳定沉积的第三步骤 第二步之后的等离子体处理，以及重复第二步骤和第三步骤的附加步骤。

公开(公告)号：US20110039369A1

公开(公告)日：2011-02-17

申请号：US12920377

申请日：2009-03-12

申请人： Kentaro Ino ,  Takeshi Shimada

发明人： Kentaro Ino ,  Takeshi Shimada

IPC分类号： H01L21/34

CPC分类号： C04B35/4682 ,  C01G23/003 ,  C01G29/006 ,  C01G33/006 ,  C01P2002/52 ,  C01P2004/03 ,  C01P2006/40 ,  C04B35/62675 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/608 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6584 ,  C04B2235/662 ,  C04B2235/85 ,  H01C7/02 ,  H01C7/023

摘要： A semiconductive porcelain composition/electrode assembly which is low in room temperature resistivity of 100 Ω·cm or less and is reduced in change with the passage of time due to energization with regard to the semiconductive porcelain composition in which a part of Ba of BaTiO3 is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary. Also, there is a process for producing a semiconductive porcelain composition/electrode assembly wherein an electrode is joined to a semiconductive porcelain composition in which a part of Ba of BaTiO3 is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary, the process including joining the electrode to the semiconductive porcelain composition, followed by conducting a heat treatment at a temperature of from 100° C. to 600° C. for 0.5 hour to 24 hours.

摘要翻译： 一种半导体瓷组合物/电极组件，其室温电阻率低于100Ω·cm·cm以下，并且由于对于半导体陶瓷组合物的通电而随时间的推移而变化，其中BaTiO 3的Ba的一部分 被Bi-Na取代，并且在晶界处具有P型半导体成分。 此外，还有一种生产半导体瓷组合物/电极组件的方法，其中电极连接到半导体陶瓷组合物中，其中BaTiO 3的Ba的一部分被Bi-Na取代，并且其中具有P型半导体组分 晶界，该方法包括将电极连接到半导体陶瓷组合物上，然后在100℃至600℃的温度下进行0.5小时至24小时的热处理。

公开(公告)号：US20100167908A1

公开(公告)日：2010-07-01

申请号：US11993722

申请日：2005-06-24

申请人： Tomoyuki Tada ,  Kazuhiro Nishikawa ,  Kazuya Toji ,  Kazuhiro Kura ,  Takeshi Shimada

发明人： Tomoyuki Tada ,  Kazuhiro Nishikawa ,  Kazuya Toji ,  Kazuhiro Kura ,  Takeshi Shimada

IPC分类号： C04B35/465

CPC分类号： H01B3/12 ,  C01G23/002 ,  C01P2002/50 ,  C01P2002/72 ,  C01P2006/32 ,  C01P2006/40 ,  C04B35/465 ,  C04B35/6262 ,  C04B35/62695 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3232 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/608 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80

摘要： The invention intends to provide a dielectric porcelain composition for use in electronic devices, in which the relative dielectric constant εr is high, the Qf value is high and, the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high. According to the invention, when, in an LnAlO3—CaTiO3-based dielectric porcelain composition, a molar ratio of LnAlO3 and CaTiO2 is optimized and Al is substituted by a slight amount of Ga, a structure that has an LnAlO3—CaTiO3 solid solution as a main phase and a solid solution of Al—Ga-based oxide as a secondary phase and does not substantially contain α-Al2O3 in the structure can be obtained, and the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high.

摘要翻译： 本发明提供一种用于电子器件的电介质瓷组合物，其中相对介电常数ε高，Qf值高，并且可以控制温度系数τf，同时保持谐振时的温度系数τf 频率小，Qf值高。 根据本发明，当在基于LnAlO3-CaTiO3的电介质瓷组合物中，优化LnAlO 3和CaTiO 2的摩尔比并且Al被少量的Ga取代时，具有LnAlO 3 -CaTiO 3固溶体作为 主相和作为第二相的Al-Ga类氧化物的固溶体，并且在该结构中基本上不含有α-Al 2 O 3，并且可以在将温度系数τf保持在谐振频率的同时控制温度系数τf 小，Qf值高。

公开(公告)号：US20100148114A1

公开(公告)日：2010-06-17

申请号：US12067782

申请日：2006-09-20

申请人： Shinji Iizuka ,  Osamu Omae ,  Kumiko Sueto ,  Takeshi Shimada ,  Shigeto Okada ,  Tomoko Iwanaga ,  Tomoyuki Shiratsuchi

发明人： Shinji Iizuka ,  Osamu Omae ,  Kumiko Sueto ,  Takeshi Shimada ,  Shigeto Okada ,  Tomoko Iwanaga ,  Tomoyuki Shiratsuchi

IPC分类号： H01M4/88

CPC分类号： H01M4/5825 ,  C01B25/45 ,  H01M4/136 ,  H01M4/366 ,  H01M4/625 ,  H01M10/052 ,  H01M2004/021

摘要： The present invention provides an olivine-type positive electrode active material that is an inexpensive and very safe positive electrode active material that also exhibits excellent battery properties even at high energy densities. The present invention also provides a method of producing this olivine-type positive electrode active material and a nonaqueous electrolyte battery that has a positive electrode that contains this olivine-type positive electrode active material. The present invention relates to a positive electrode active material that comprises an olivine-type lithium manganese phosphate compound represented by the following general formula (1) LixMnyMaPO4  (1) (in the formula, 0

摘要翻译： 本发明提供一种廉价且非常安全的正极活性物质的橄榄石型正极活性物质，即使在高能量密度下也显示优异的电池特性。 本发明还提供一种生产该橄榄石型正极活性物质和含有该橄榄石型正极活性物质的正极的非水电解质电池的方法。 本发明涉及一种正极活性物质，其包含由以下通式（1）表示的橄榄石型磷酸锰锂化合物：LixMnyMaPO4（1）（式中，0

公开(公告)号：US07648935B2

公开(公告)日：2010-01-19

申请号：US11993700

申请日：2005-06-24

申请人： Takeshi Shimada ,  Kazuhiro Kura

发明人： Takeshi Shimada ,  Kazuhiro Kura

IPC分类号： C04B35/47

CPC分类号： H01B3/12 ,  C04B35/44 ,  C04B35/47 ,  C04B35/6262 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6585 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/94

摘要： The invention intends to provide a dielectric porcelain composition for use in electronic devices, which has the dielectric characteristics such that the Qf value is high, the temperature coefficient τf of a resonant frequency is small and a value thereof can be controlled in a wide range in positive and negative directions in the vicinity where the relative dielectric constant ∈r is 39. According to the invention, when, in La—Pr—Al—Ga—Sr—Ti-based oxide dielectric porcelain, contents of the respective elements are limited to be within particular ranges and Sr is partially substituted by Ca, a structure having a (1-x)(La1-yLny)(Al1-zGaz)O3-x(Sr1-mCam)TiO3 solid solution as a main phase, in which a solid solution of Al—Ga—Sr-based oxide and/or a solid solution of Al—Ga-based oxide and a Sr oxide is/are precipitated in a grain boundary thereof, can be obtained, whereby the above-mentioned object can be achieved.

摘要翻译： 本发明旨在提供一种用于电子器件的电介质瓷组合物，其具有使Qf值高的介电特性，谐振频率的温度系数τf小，其值可以在宽范围内被控制 根据本发明，当在La-Pr-Al-Ga-Sr-Ti系氧化物介电瓷中，各元素的含量限于 在一定范围内，Sr部分被Ca取代，Ca是具有（1-x）（La1-yLny）（Al1-zGaz）O3-x（Sr1-mCam）TiO3固溶体作为主相的结构，其中a 可以获得Al-Ga-Sr系氧化物和/或Al-Ga系氧化物和Sr氧化物的固溶体在其晶界析出的固溶体，由此上述目的可以是 实现了

公开(公告)号：US20090105064A1

公开(公告)日：2009-04-23

申请号：US12299994

申请日：2007-10-26

申请人： Takeshi Shimada ,  Kazuya Toji

发明人： Takeshi Shimada ,  Kazuya Toji

IPC分类号： C04B35/468

CPC分类号： H01L21/02197 ,  C01G29/006 ,  C01P2006/40 ,  C04B35/4682 ,  C04B35/62645 ,  C04B35/62675 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3234 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6584 ,  H01C7/025 ,  H01C7/045 ,  H01C17/06533 ,  H01G4/1227 ,  H01G7/06 ,  H01L21/02205 ,  H01L21/02255 ,  H01L21/31691 ,  H01L28/55

摘要： To provide a semiconductor ceramic composition containing no Pb in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of shifting the Curie temperate to a positive direction as well as of greatly lowering resistivity at room temperature, and a method for producing the same.BaTiO3 calcined powder and (BiNa)TiO3 calcined powder, which contain no semiconductive dopant, are prepared separately, the calcined powders are mixed, crushed, formed, and then sintered in an inert gas atmosphere having an oxygen concentration of 1% or less to obtain a semiconductor ceramic composition represented by a composition formula: [(BiNa)xBa1-x]TiO3 in which x satisfies 0

摘要翻译： 为了提供一种不含Pb的半导体陶瓷组合物，其中BaTiO 3中的Ba的一部分被Bi-Na取代，Bi-Na能够使居里温带向正方向移动以及在室温下极大降低电阻率，以及方法 为了生产相同。 分别制备不含半导体掺杂剂的BaTiO 3煅烧粉末和（BiNa）TiO 3煅烧粉末，将煅烧粉末混合，粉碎，形成，然后在氧浓度为1％以下的惰性气体气氛中烧结，得到 由组成式：[（BiNa）xBa1-x] TiO3表示的半导体陶瓷组合物，其中x满足0