公开(公告)号：US10115758B2

公开(公告)日：2018-10-30

申请号：US15452935

申请日：2017-03-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kai-Yi Chen ,  Chih-Fei Lee ,  Fu-Cheng Chang ,  Ching-Hung Kao ,  Chia-Pin Cheng

IPC: H01L31/0232 ,  H01L27/146

Abstract: A semiconductor device and a method for fabricating the same are provided. In the method for fabricating the semiconductor device, at first, a semiconductor substrate is provided. Then, a trench is formed in the semiconductor substrate. Thereafter, a dielectric layer is formed to cover the semiconductor substrate, in which the dielectric layer has a trench portion located in the trench of the semiconductor substrate. Then, a reflective material layer is formed on the trench portion of the dielectric layer. Thereafter, the reflective material layer is etched to form an isolation structure, in which the isolation structure includes a top portion located on the semiconductor substrate and a bottom portion located in a trench formed by the trench portion of the dielectric layer.

公开(公告)号：US10020265B2

公开(公告)日：2018-07-10

申请号：US15158402

申请日：2016-05-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuo-Hung Lee ,  Chih-Fei Lee ,  Fu-Cheng Chang ,  Ching-Hung Kao

IPC: H01L21/02 ,  H01L23/544 ,  H01L21/78 ,  H01L23/522 ,  H01L23/528 ,  H01L49/02

CPC classification number: H01L23/544 ,  H01L21/78 ,  H01L23/5223 ,  H01L23/528 ,  H01L28/40 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446

Abstract: A method of fabricating a semiconductor structure includes forming an alignment mark layer on a substrate; patterning the alignment mark layer for forming at least one alignment mark feature; forming a bottom conductive layer on the patterned alignment mark layer in a substantially conformal manner; forming an insulator layer on the bottom conductive layer; and forming a top conductive layer on the insulator layer.

公开(公告)号：US20180166592A1

公开(公告)日：2018-06-14

申请号：US15469646

申请日：2017-03-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Hsiang Tseng ,  Chih-Fei Lee ,  Chia-Pin Cheng ,  Fu-Cheng Chang

IPC: H01L31/0216 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/02162 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/0232 ,  H01L31/1125 ,  Y02E10/50 ,  Y02P70/521

Abstract: A semiconductor device is provided, which includes a substrate and at least one nanostructure. The substrate has sensing pixels, and each of the sensing pixels has a photo sensing region for absorbing incident light. The nanostructure is directly on the photo sensing region. The nanostructure of each of the sensing pixels has a projected portion on an upper surface of the substrate, and a circle equivalent diameter of the projected portion of the nanostructure of each of the sensing pixels is substantially within a wavelength range of 100 nm to 1900 nm of the incident light configured to enter the substrate through the nanostructure.

公开(公告)号：US20160268221A1

公开(公告)日：2016-09-15

申请号：US15160618

申请日：2016-05-20

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Chih-Fei Lee ,  Fu-Cheng Chang ,  Chi-Cherng Jeng ,  Hsin-Chi Chen ,  Yuan-Ko Hwang

IPC: H01L23/00

CPC classification number: H01L24/02 ,  H01L23/3192 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02315 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/0236 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0361 ,  H01L2224/0362 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2924/30101 ,  H01L2924/30105 ,  H01L2924/00014

Abstract: A structure of an under bump metallization and a method of forming the same are provided. The under bump metallization has a redistribution via hole, viewed from the top, in a round shape or a polygon shape having an angle between adjacent edges greater than 90°. Therefore, the step coverage of the later formed metal layer can be improved.

公开(公告)号：US20150228593A1

公开(公告)日：2015-08-13

申请号：US14179688

申请日：2014-02-13

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Chih-Fei Lee ,  Fu-Cheng Chang ,  Chi-Cherng Jeng ,  Hsin-Chi Chen ,  Yuan-Ko Hwang

IPC: H01L23/00

CPC classification number: H01L24/02 ,  H01L23/3192 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02315 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/0236 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0361 ,  H01L2224/0362 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2924/30101 ,  H01L2924/30105 ,  H01L2924/00014

Abstract: A structure of an under bump metallization and a method of forming the same are provided. The under bump metallization has a redistribution via hole, viewed from the top, in a round shape or a polygon shape having an angle between adjacent edges greater than 90°. Therefore, the step coverage of the later formed metal layer can be improved.

Abstract translation: 提供了凸起下金属化的结构及其形成方法。 凸起下金属化具有从顶部观察到的圆形或具有大于90°的相邻边缘之间的角度的多边形形状的再分配通孔。 因此，可以提高稍后形成的金属层的台阶覆盖。