公开(公告)号：US11682639B2

公开(公告)日：2023-06-20

申请号：US17383215

申请日：2021-07-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Hao Cheng ,  Yen-Yu Chen ,  Chih-Wei Lin ,  Yi-Ming Dai

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L24/03 ,  H01L21/56 ,  H01L21/76802 ,  H01L21/76888 ,  H01L23/3171 ,  H01L23/5226 ,  H01L24/08

Abstract: A device includes an interconnect structure, a barrier multi-layer structure, an oxide layer, a pad metal layer, and a passivation layer. The barrier multi-layer structure is over the interconnect structure, the barrier multi-layer structure includes a first metal nitride layer and a second metal nitride layer over the first metal nitride layer. The oxide layer is over the barrier multi-layer structure, in which the oxide layer is an oxide of the second metal nitride layer of the barrier multi-layer structure. The pad metal layer is over the oxide layer. The passivation layer is in contact with the barrier multi-layer structure, the oxide layer, and the pad metal layer.

公开(公告)号：US11610822B2

公开(公告)日：2023-03-21

申请号：US16925893

申请日：2020-07-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Yu Chen ,  Chung-Liang Cheng

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L29/06 ,  H01L21/033

Abstract: A semiconductor device includes a first gate structure that includes a first interfacial layer, a first gate dielectric layer disposed over the first interfacial layer, and a first gate electrode disposed over the first gate dielectric layer. The semiconductor device also includes a second gate structure that includes a second interfacial layer, a second gate dielectric layer disposed over the second interfacial layer, and a second gate electrode disposed over the second gate dielectric layer. The first interfacial layer contains a different amount of a dipole material than the second interfacial layer.

公开(公告)号：US20220367606A1

公开(公告)日：2022-11-17

申请号：US17815524

申请日：2022-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Anhao CHENG ,  Fang-Ting Kuo ,  Yen-Yu Chen

IPC: H01L49/02 ,  H01L23/522 ,  H01L23/528

Abstract: The present disclosure is directed to a method for the fabrication of MiM capacitor structures with metallic electrodes having nitrogen-rich metal nitride layers. The method includes depositing a first electrode bilayer on a first interconnect disposed on a substrate, where the first electrode includes a first layer and a second layer with a different nitrogen concentration. The method also includes depositing a dielectric layer on the first electrode bilayer and depositing a second electrode bilayer on the first interconnect where the second electrode includes a third layer and a fourth layer with a different nitrogen concentration. The method further includes patterning the first electrode bilayer, the dielectric layer, and the second electrode bilayer to form a capacitor structure on the first interconnect layer.

公开(公告)号：US20220367343A1

公开(公告)日：2022-11-17

申请号：US17870213

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung Hsun Lin ,  Che-Chih Hsu ,  Wen-Chu Huang ,  Chinyu Su ,  Yen-Yu Chen ,  Wei-Chun Hua ,  Wen Han Hung

IPC: H01L23/522 ,  H01L23/66 ,  H01L49/02 ,  H01L21/768 ,  H01L23/64

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

公开(公告)号：US20220359232A1

公开(公告)日：2022-11-10

申请号：US17869139

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsuan-Chih Chu ,  Wen-Hao Cheng ,  Yen-Yu Chen ,  Yi-Ming Dai

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/66 ,  H01L21/687 ,  C23C14/00 ,  C23C14/54 ,  C23C14/50 ,  B25B11/00 ,  C30B25/12 ,  B25J11/00 ,  B29C64/241 ,  B25J18/04 ,  B25F5/02 ,  H01J37/20

Abstract: The present disclosure provides a flexible workpiece pedestal capable of tilting a workpiece support surface. The workpiece pedestal further includes a heater mounted on the workpiece support surface. The heater includes a plurality of heating sources such as heating coils. The plurality of heating sources in the heater allows heating the workpiece at different temperatures for different zones of the workpiece. For example, the workpiece can have a central zone heated by a first heating coil, a first outer ring zone that is outside of the central zone heated by a second heating coil, a second outer ring zone that is outside of the first outer ring zone heated by a third heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.

公开(公告)号：US11492700B2

公开(公告)日：2022-11-08

申请号：US16657832

申请日：2019-10-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hao Cheng ,  Yen-Yu Chen ,  Yi-Ming Dai

IPC: C23C16/02 ,  C23C16/458 ,  C23C14/34 ,  C23C14/02 ,  C23C16/46 ,  C23C16/34

Abstract: The present disclosure provides a multifunction chamber having a multifunctional shutter disk. The shutter disk includes a lamp device, a DC/RF power device, and a gas line on one surface of the shutter disk. With this configuration, simplifying the chamber type is possible as the various specific, dedicated chambers such as a degas chamber, a pre-clean chamber, a CVD/PVD chamber are not required. By using the multifunctional shutter disk, the degassing function and the pre-cleaning function are provided within a single chamber. Accordingly, a separate degas chamber and a pre-clean chamber are no longer required and the overall transfer time between chambers is reduced or eliminated.

公开(公告)号：US20220336291A1

公开(公告)日：2022-10-20

申请号：US17810799

申请日：2022-07-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Yu Chen ,  Chung-Liang Cheng

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L29/06 ,  H01L21/033

Abstract: A semiconductor device includes a first gate structure that includes a first interfacial layer, a first gate dielectric layer disposed over the first interfacial layer, and a first gate electrode disposed over the first gate dielectric layer. The semiconductor device also includes a second gate structure that includes a second interfacial layer, a second gate dielectric layer disposed over the second interfacial layer, and a second gate electrode disposed over the second gate dielectric layer. The first interfacial layer contains a different amount of a dipole material than the second interfacial layer.

公开(公告)号：US11374090B2

公开(公告)日：2022-06-28

申请号：US16835916

申请日：2020-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Yu Chen ,  Chung-Liang Cheng

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/49 ,  H01L21/8234 ,  H01L29/51 ,  H01L27/088

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the same are disclosed. The semiconductor device includes first and second pair of source/drain regions disposed on a substrate, first and second nanostructured channel regions, and first and second gate structures with effective work function values different from each other. The first and second gate structures include first and second high-K gate dielectric layers, first and second barrier metal layers with thicknesses different from each, first and second work function metal (WFM) oxide layers with thicknesses substantially equal to each other disposed on the first and second barrier metal layers, respectively, a first dipole layer disposed between the first WFM oxide layer and the first barrier metal layer, and a second dipole layer disposed between the second WFM oxide layer and the second barrier metal layer.

公开(公告)号：US11322410B2

公开(公告)日：2022-05-03

申请号：US16199498

申请日：2018-11-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Liang Cheng ,  Wei-Jen Chen ,  Yen-Yu Chen ,  Ming-Hsien Lin

IPC: H01L27/02 ,  H01L21/8234 ,  H01L21/3213 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/02 ,  H01L27/088 ,  H01L27/12

Abstract: Methods for tuning threshold voltages of fin-like field effect transistor (FinFET) devices are disclosed herein. An exemplary integrated circuit device includes a high voltage n-type FinFET, a high voltage p-type FinFET, a low voltage n-type FinFET, and a low voltage p-type FinFET. Threshold voltages of the high voltage n-type FinFET and the high voltage p-type FinFET are greater than threshold voltages of the low voltage n-type FinFET and the low voltage p-type FinFET, respectively. The high voltage n-type FinFET, the high voltage p-type FinFET, the low voltage n-type FinFET, and the low voltage p-type FinFET each include a threshold voltage tuning layer that includes tantalum and nitrogen. Thicknesses of the threshold voltage tuning layer of the low voltage n-type FinFET and the low voltage p-type FinFET are less than thicknesses of the threshold voltage tuning layer of the high voltage n-type FinFET and the high voltage p-type FinFET, respectively.

公开(公告)号：US20210280692A1

公开(公告)日：2021-09-09

申请号：US17323557

申请日：2021-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih Wei Bih ,  Han-Wen Liao ,  Xuan-You Yan ,  Yen-Yu Chen ,  Chun-Chih Lin

IPC: H01L29/66 ,  H01L21/28 ,  H01L29/51 ,  H01L21/3213 ,  H01L27/092 ,  H01L29/423

Abstract: A polysilicon layer is formed over a substrate. The polysilicon layer is etched to form a dummy gate electrode having a top portion with a first lateral dimension and a bottom portion with a second lateral dimension. The first lateral dimension is greater than, or equal to, the second lateral dimension. The dummy gate electrode is replaced with a metal gate electrode.