公开(公告)号：US06440616B1

公开(公告)日：2002-08-27

申请号：US09671501

申请日：2000-09-27

申请人： Kyoko Izuha ,  Tadahito Fujisawa ,  Soichi Inoue

发明人： Kyoko Izuha ,  Tadahito Fujisawa ,  Soichi Inoue

IPC分类号： G03F900

CPC分类号： G03F7/70641 ,  G03F1/26 ,  G03F1/44

摘要： There is disclosed a focus-monitoring mask which is adapted to be employed on an occasion of transferring a pattern on a wafer by way of photolithography, the mask comprising a first pattern region having at least one first monitor pattern which is constituted by a first opening surrounded by a first film or constituted by the first film surrounded by the first opening, and a second pattern region having at least one second monitor pattern which is constituted by a second opening surrounded by a second film or constituted by the second film surrounded by the second opening, and is capable of giving a predetermined phase difference to an exposure light passing through the second film relative to an exposure light passing through the second opening, wherein the first and second monitor patterns have a configuration in which both ends thereof are tapered from a central portion thereof.

摘要翻译： 公开了一种适于在通过光刻法在晶片上转印图案的情况下采用的聚焦监视掩模，该掩模包括具有至少一个第一监视器图案的第一图案区域，该第一图案区域由第一开口 由第一膜包围或由第一膜包围的第一膜构成的第二图案区域和具有至少一个第二监测图案的第二图案区域，该第二图案区域由第二开口构成，第二开口由第二膜包围或由第二膜包围， 并且能够相对于通过第二开口的曝光光对通过第二膜的曝光光赋予预定的相位差，其中第一和第二监视器图案具有其两端从 其中心部分。

公开(公告)号：US06317198B1

公开(公告)日：2001-11-13

申请号：US09345758

申请日：1999-07-01

申请人： Kazuya Sato ,  Satoshi Tanaka ,  Tadahito Fujisawa ,  Soichi Inoue

发明人： Kazuya Sato ,  Satoshi Tanaka ,  Tadahito Fujisawa ,  Soichi Inoue

IPC分类号： G03B2732

CPC分类号： G03F7/706

摘要： In a method of examining the shape of the light source of an exposure tool, the shape of the pupil of its projection optical system, and the alignment of the shape of the light source with the shape of the pupil, the exposure tool comprising a light source, an illumination optical system for directing the light emitted from the light source to a reticle, and a projection optical system for transferring the reduced image on the reticle onto a wafer, the light emitted from the light source is projected on a reticle including a grating pattern where a transmitting area and a shading area are repeated in a finite number, the diffracted light of the first order or higher passed through the reticle is caused to illuminate the outer edge of the pupil of the projection optical system, and the pattern image on the reticle is projected on the wafer in the defocus state.

摘要翻译： 在检查曝光工具的光源的形状，其投影光学系统的光瞳的形状以及光源的形状与瞳孔的形状的对准的方法中，曝光工具包括光 光源，用于将从光源发射的光引导到掩模版的照明光学系统，以及用于将掩模版上的还原图像转印到晶片上的投影光学系统，从光源发射的光被投射在包括 以有限数量重复发送区域和阴影区域的光栅图案，使通过标线的一级以上的衍射光照射投影光学系统的光瞳的外缘，并且图案图像 在散焦状态下，在掩模版上投影在晶片上。

公开(公告)号：US06316163B1

公开(公告)日：2001-11-13

申请号：US09163421

申请日：1998-09-30

申请人： Shunko Magoshi ,  Masamitsu Itoh ,  Shinji Sato ,  Soichi Inoue ,  Kazuyoshi Sugihara ,  Katsuya Okumura

发明人： Shunko Magoshi ,  Masamitsu Itoh ,  Shinji Sato ,  Soichi Inoue ,  Kazuyoshi Sugihara ,  Katsuya Okumura

IPC分类号： G03F900

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F7/7045 ,  H01J37/3174

摘要： A method for forming patterns, in which pattern transfer to the same photosensitive material on a first layer is carried out using both light exposure and charged particle beam exposure, comprises the steps of performing a predetermined geometric operation between data associated with a pattern to be transferred to the first layer and data associated with a pattern to be transferred to a second layer different from the first layer, separating the pattern data associated with the pattern to be transferred to the first layer into first exposure pattern data for charged particle beam exposure and second exposure pattern data for light exposure, and performing pattern transfer on to the first layer based on the result of the separation.

摘要翻译： 一种用于形成图案的方法，其中使用曝光和带电粒子束曝光两者进行对第一层上的相同感光材料的图案转印，包括以下步骤：在与待转印图案相关联的数据之间执行预定的几何运算 将与要传送到不同于第一层的第二层的图案相关联的数据相关联的数据与将要传送到第一层的图案相关联的图案数据分离成用于带电粒子束曝光的第一曝光图案数据和第二层 用于曝光的曝光图案数据，以及基于分离结果将图案转印到第一层上。

公开(公告)号：US5783336A

公开(公告)日：1998-07-21

申请号：US729281

申请日：1996-10-10

申请人： Masami Aoki ,  Yusuke Kohyama ,  Soichi Inoue ,  Akiko Nikki

发明人： Masami Aoki ,  Yusuke Kohyama ,  Soichi Inoue ,  Akiko Nikki

IPC分类号： G03F1/00 ,  G03F9/00

CPC分类号： G03F1/30 ,  G03F1/26

摘要： A mask for exposure includes a light transmitting substrate, a plurality of substantially oblong, island-like light transmitting sections arranged periodically on the substrate, an opaque section formed on the substrate except where the light transmitting sections are arranged, and a plurality of phase shifter layers selectively formed in the light transmitting sections. The light transmitting sections include paired light transmitting sections opposed to each other at one end portion, and one of the phase shifter layers is formed in one of the paired light transmitting sections. An interval between the paired light transmitting sections at one end portion is smaller than an interval between adjacent ones of the light transmitting sections at portions other than the one end portion.

摘要翻译： 用于曝光的掩模包括透光基板，在基板周期性地布置的多个基本上长方形的岛状光透射部分，形成在基板上的不透明部分，除了布置有透光部分之外的多个移相器 在透光部中选择性地形成层。 光透射部分包括在一个端部处彼此相对的成对的光透射部分，并且一个移相器层形成在一个光发射部分之一中。 在一个端部的一对光传输部之间的间隔小于在一个端部以外的部分的相邻的透光部之间的间隔。

公开(公告)号：US5745388A

公开(公告)日：1998-04-28

申请号：US551803

申请日：1995-11-07

申请人： Shoji Mimotogi ,  Soichi Inoue

发明人： Shoji Mimotogi ,  Soichi Inoue

IPC分类号： G01B11/24 ,  G03F7/26 ,  G06F17/50 ,  G06F19/00 ,  G06T11/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

CPC分类号： G06F17/5018 ,  G06T11/203

摘要： A profile simulation method of predicting a profile of a surface of a film to be processed which changes when the surface of the film on a substrate is physically or chemically processed, is characterized by comprising the steps of setting a plurality of representative points on the surface of the film before a process, moving the plurality of representative points in a first direction perpendicular to the surface of the film on the substrate in accordance with processing velocities at the plurality of representative points, switching the moving direction of the representative points from the first direction to a second direction parallel to the surface of the film on the substrate, and moving the plurality of representative points in the second direction in accordance with processing velocities at the plurality of representative points, and setting all loci of the plurality of representative points, which have moved from the first direction to the second direction in a predetermined processing time, as paths, and obtaining a envelope or surface for all the paths as a profile after the process.

摘要翻译： 一种轮廓模拟方法，其特征在于包括以下步骤：在所述表面上设置多个代表点，所述轮廓模拟方法用于预测在基材上的所述膜的表面物理或化学处理时改变的被处理膜表面的轮廓， 在所述处理之前，根据所述多个代表点处的处理速度，在与所述基板上的所述膜的表面垂直的第一方向上移动所述多个代表点，将所述代表点的移动方向从所述第一 方向到平行于基板上的膜表面的第二方向，并且根据多个代表点处的处理速度在第二方向上移动多个代表点，并且设置多个代表点的所有轨迹， 它们以预定的p从第一方向移动到第二方向 处理时间作为路径，并且在所有过程之后获得用于所有路径的包络或表面作为简档。

公开(公告)号：US08440376B2

公开(公告)日：2013-05-14

申请号：US13007238

申请日：2011-01-14

申请人： Toshiya Kotani ,  Kazuya Fukuhara ,  Michiya Takimoto ,  Hidefumi Mukai ,  Soichi Inoue

发明人： Toshiya Kotani ,  Kazuya Fukuhara ,  Michiya Takimoto ,  Hidefumi Mukai ,  Soichi Inoue

IPC分类号： G03F9/00 ,  G03C5/00

CPC分类号： G03F7/70425 ,  G03F7/70558

摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.

摘要翻译： 根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。 使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光 基于掩模图案图，在基板上形成图案的曝光中的每个位置。

公开(公告)号：USRE43659E1

公开(公告)日：2012-09-11

申请号：US12945672

申请日：2010-11-12

申请人： Toshiya Kotani ,  Satoshi Tanaka ,  Soichi Inoue

发明人： Toshiya Kotani ,  Satoshi Tanaka ,  Soichi Inoue

IPC分类号： G06F17/50 ,  G06F9/455

CPC分类号： G06F17/5081

摘要： A method for designing a semiconductor integrated circuit is provided which comprises compacting a design layout of a semiconductor integrated circuit on the basis of a given design rule to obtain a compacted pattern, predicting a pattern to be formed at a surface area of a wafer for forming the semiconductor integrated circuit on the basis of the compacted pattern, obtaining an evaluated value by comparing the predicted pattern with the compacted pattern, deciding whether the evaluated value satisfies a predetermined condition, and modifying the design rule when the evaluated value is decided as not satisfying the predetermined condition.

摘要翻译： 提供了一种用于设计半导体集成电路的方法，其包括基于给定的设计规则压缩半导体集成电路的设计布局以获得压缩图案，预测在用于形成的晶片的表面区域形成的图案 所述半导体集成电路基于所述压实图案，通过将所述预测图案与所述压实图案进行比较来获得评价值，判定所述评价值是否满足预定条件，以及当所述评价值被判定为不满足时修改所述设计规则 预定条件。

公开(公告)号：US08183119B2

公开(公告)日：2012-05-22

申请号：US12724118

申请日：2010-03-15

申请人： Koji Hashimoto ,  Soichi Inoue ,  Kazuhiro Takahata ,  Kei Yoshikawa

发明人： Koji Hashimoto ,  Soichi Inoue ,  Kazuhiro Takahata ,  Kei Yoshikawa

IPC分类号： H01L22/321

CPC分类号： G03F7/0035 ,  H01L21/0338 ,  H01L21/28123 ,  H01L21/32139 ,  H01L21/823456 ,  H01L21/823475 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/10897

摘要： A resist pattern (5) is formed in a dimension of a limitation of an exposure resolution over a hard mask material film (4) over a work film (3). The material film (4) is processed using the resist pattern (5) as a mask. A hard mask pattern (6) is thereby formed. Thereby a resist pattern (7), over a non-selected region (6b), having an opening (7a) through which a selection region (6a) in the mask pattern is exposed is formed. Only the mask pattern (6a) exposed through the opening (7a) is slimmed by performing a selection etching, the work film (3) is etched by using the mask pattern (6). A work film pattern (8) is thereby formed, which include a wide pattern section (8a) of a dimension width of the limitation of the exposure resolution and a slimmed pattern section (8a) of a dimension that is not more than the limitation of the exposure resolution.

摘要翻译： 在工作薄膜（3）上的硬掩模材料膜（4）上的曝光分辨率的限制的尺寸形成抗蚀剂图案（5）。 使用抗蚀剂图案（5）作为掩模来处理材料膜（4）。 由此形成硬掩模图案（6）。 由此，在非选择区域（6b）上形成具有露出掩模图案中的选择区域（6a）的开口（7a）的抗蚀剂图案（7）。 通过进行选择蚀刻，只有通过开口（7a）露出的掩模图案（6a）变薄，通过使用掩模图案（6）蚀刻工作膜（3）。 由此形成工作胶片图案（8），其包括具有限制曝光分辨率的尺寸宽度的宽图案部分（8a）和尺寸不超过限制的尺寸的纤薄图案部分（8a） 曝光分辨率。

公开(公告)号：USRE42294E1

公开(公告)日：2011-04-12

申请号：US10819338

申请日：2004-04-07

申请人： Toshiya Kotani ,  Satoshi Tanaka ,  Soichi Inoue

发明人： Toshiya Kotani ,  Satoshi Tanaka ,  Soichi Inoue

IPC分类号： G06F17/50 ,  G06F9/455 ,  G06F11/22

CPC分类号： G06F17/5081

摘要： A method for designing a semiconductor integrated circuit is provided which comprises compacting a design layout of a semiconductor integrated circuit on the basis of a given design rule to obtain a compacted pattern, predicting a pattern to be formed at a surface area of a wafer for forming the semiconductor integrated circuit on the basis of the compacted pattern, obtaining an evaluated value by comparing the predicted pattern with the compacted pattern, deciding whether the evaluated value satisfies a predetermined condition, and modifying the design rule when the evaluated value is decided as not satisfying the predetermined condition.

摘要翻译： 提供了一种用于设计半导体集成电路的方法，其包括基于给定的设计规则压缩半导体集成电路的设计布局以获得压缩图案，预测在用于形成的晶片的表面区域形成的图案 所述半导体集成电路基于所述压实图案，通过将所述预测图案与所述压实图案进行比较来获得评价值，判定所述评价值是否满足预定条件，以及当所述评价值被判定为不满足时修改所述设计规则 预定条件。

公开(公告)号：US20100067777A1

公开(公告)日：2010-03-18

申请号：US12536900

申请日：2009-08-06

申请人： Katsuyoshi Kodera ,  Satoshi Tanaka ,  Shimon Maeda ,  Suigen Kyoh ,  Soichi Inoue ,  Ryuji Ogawa

发明人： Katsuyoshi Kodera ,  Satoshi Tanaka ,  Shimon Maeda ,  Suigen Kyoh ,  Soichi Inoue ,  Ryuji Ogawa

IPC分类号： G06K9/00

CPC分类号： G03F1/44 ,  G03F1/36

摘要： An evaluation pattern generating method including dividing a peripheral area of an evaluation target pattern into a plurality of meshes; calculating an image intensity of a circuit pattern when the evaluation target pattern is transferred onto a wafer by a lithography process in a case where a mask function value is given to a predetermined mesh; calculating a mask function value of the mesh so that a cost function of the image intensity, in which an optical image characteristic amount that affects a transfer performance of the evaluation target pattern to the wafer is set to the image intensity, satisfies a predetermined reference when evaluating a lithography performance of the evaluation target pattern; and generating an evaluation pattern corresponding to the mask function value.

摘要翻译： 1.一种评价图案生成方法，包括将评价对象图案的周边区域划分为多个网格; 当将掩模函数值赋予预定网格时，通过光刻处理将评估对象图案转印到晶片上时，计算电路图案的图像强度; 计算网格的掩码函数值，使得影响评估对象图案对晶片的转印性能的光学图像特征量被设置为图像强度的图像强度的成本函数满足预定参考，当 评估目标模式的光刻性能评估; 以及生成与所述掩模功能值对应的评估图案。