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42 条记录 (耗时 0.034 秒)

    Pattern forming method
    1.
    发明授权
    Pattern forming method 失效
    图案形成方法

    公开(公告)号：US06316163B1

    公开(公告)日：2001-11-13

    申请号：US09163421

    申请日：1998-09-30

    申请人： Shunko Magoshi ,  Masamitsu Itoh ,  Shinji Sato ,  Soichi Inoue ,  Kazuyoshi Sugihara ,  Katsuya Okumura

    发明人： Shunko Magoshi ,  Masamitsu Itoh ,  Shinji Sato ,  Soichi Inoue ,  Kazuyoshi Sugihara ,  Katsuya Okumura

    IPC分类号： G03F900

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F7/7045 ,  H01J37/3174

    摘要： A method for forming patterns, in which pattern transfer to the same photosensitive material on a first layer is carried out using both light exposure and charged particle beam exposure, comprises the steps of performing a predetermined geometric operation between data associated with a pattern to be transferred to the first layer and data associated with a pattern to be transferred to a second layer different from the first layer, separating the pattern data associated with the pattern to be transferred to the first layer into first exposure pattern data for charged particle beam exposure and second exposure pattern data for light exposure, and performing pattern transfer on to the first layer based on the result of the separation.

    摘要翻译： 一种用于形成图案的方法，其中使用曝光和带电粒子束曝光两者进行对第一层上的相同感光材料的图案转印，包括以下步骤：在与待转印图案相关联的数据之间执行预定的几何运算 将与要传送到不同于第一层的第二层的图案相关联的数据相关联的数据与将要传送到第一层的图案相关联的图案数据分离成用于带电粒子束曝光的第一曝光图案数据和第二层 用于曝光的曝光图案数据，以及基于分离结果将图案转印到第一层上。

    Charged beam drawing apparatus
    4.
    发明授权
    Charged beam drawing apparatus 失效
    充电光束拉制装置

    公开(公告)号：US06495841B1

    公开(公告)日：2002-12-17

    申请号：US09299145

    申请日：1999-04-26

    申请人： Atsushi Ando ,  Shunko Magoshi ,  Kazuyoshi Sugihara ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura ,  Kiyoshi Hattori

    发明人： Atsushi Ando ,  Shunko Magoshi ,  Kazuyoshi Sugihara ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura ,  Kiyoshi Hattori

    IPC分类号： H01J37317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/023 ,  H01J37/3174

    摘要： In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mechanically moving the objective lens and objective deflector in a plane perpendicular to the optical axis of the electron beam is provided and an optical axis shifting deflector arranged nearer to the electron gun than the objective lens and objective deflector, for deflecting the electron beam in synchronism with the operation of the objective lens and objective deflector is provided.

    摘要翻译： 在包括用于将从电子枪发射的电子束聚焦在样品表面上的物镜和用于控制电子束在样品表面上的位置的物镜偏转器的电子束描绘装置中，用于机械地移动物镜的物镜驱动机构 提供了与电子束的光轴垂直的平面中的透镜和物镜偏转器，并且与物镜和物镜偏转器相比更靠近电子枪布置的光轴移动偏转器，用于与电子束的操作同步地偏转 提供物镜和物镜偏转器。

    Focused ion beam deposition using TMCTS
    5.
    发明授权
    Focused ion beam deposition using TMCTS 失效
    使用TMCTS聚焦离子束沉积

    公开(公告)号：US5639699A

    公开(公告)日：1997-06-17

    申请号：US420153

    申请日：1995-04-11

    申请人： Hiroko Nakamura ,  Haruki Komano ,  Kazuyoshi Sugihara ,  Keiji Horioka ,  Mitsuyo Kariya ,  Soichi Inoue ,  Ichiro Mori ,  Katsuya Okumura ,  Tadahiro Takigawa ,  Toru Watanabe ,  Motosuke Miyoshi ,  Yuichiro Yamazaki ,  Haruo Okano

    发明人： Hiroko Nakamura ,  Haruki Komano ,  Kazuyoshi Sugihara ,  Keiji Horioka ,  Mitsuyo Kariya ,  Soichi Inoue ,  Ichiro Mori ,  Katsuya Okumura ,  Tadahiro Takigawa ,  Toru Watanabe ,  Motosuke Miyoshi ,  Yuichiro Yamazaki ,  Haruo Okano

    IPC分类号： B05D5/00 ,  C23C16/04 ,  G03F1/00 ,  G03F1/26 ,  G03F1/74 ,  H01L21/316

    CPC分类号： G03F1/74 ,  B05D5/005 ,  C23C16/047 ,  G03F1/26

    摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.

    摘要翻译： 根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜 在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜 使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。 根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分 使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜 并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

    Pattern forming method using alignment from latent image or base pattern on substrate
    8.
    发明授权
    Pattern forming method using alignment from latent image or base pattern on substrate 失效
    图案形成方法使用在底物上的潜像或基底图案的取向

    公开(公告)号：US5989759A

    公开(公告)日：1999-11-23

    申请号：US30886

    申请日：1998-02-26

    申请人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

    发明人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

    IPC分类号： G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  G03F9/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/7045 ,  G03F7/70675 ,  H01J37/3045 ,  H01J37/3174 ,  Y10S430/143

    摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.

    摘要翻译： 为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。 在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。 根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。 结果，粗图案和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。

    Pattern forming method
    10.
    发明授权
    Pattern forming method 失效
    图案形成方法

    公开(公告)号：US06941008B2

    公开(公告)日：2005-09-06

    申请号：US10407126

    申请日：2003-04-07

    申请人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

    发明人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

    IPC分类号： G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  G06K9/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/7045 ,  G03F7/70675 ,  H01J37/3045 ,  H01J37/3174 ,  Y10S430/143

    摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional-displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.

    摘要翻译： 为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。 在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。 根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。 结果，粗略和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。