Beverage maker
    33.
    发明申请
    Beverage maker 审中-公开
    饮料制造商

    公开(公告)号:US20070017382A1

    公开(公告)日:2007-01-25

    申请号:US11491571

    申请日:2006-07-24

    IPC分类号: A47J31/00

    摘要: A beverage maker including an extract liquid receptacle 52A for storing therein extract liquid extracted by beverage extraction means 50, and a cooling reservoir 52B for accommodating therein cooling liquid that contact the extract liquid with the walls of that extract liquid receptacle 52A in between, so that the extract liquid is cooled by the cooling reservoir 52B; wherein the extract liquid receptacle 52A and cooling reservoir 52B are integrated to form a cooling unit 52, a cooling material is sealed in the cooling reservoir 52B, so that the entire cooling unit 52 is cooled.

    摘要翻译: 一种饮料制造商,其包括用于储存由饮料提取装置50提取的提取液的提取液容器52A和用于容纳其中的冷却液体的冷却液体52B,所述冷却液体与提取液体容器52A的壁接触, ,使得提取液被冷却储存器52B冷却; 其中提取液容器52A和冷却储存器52B被一体化以形成冷却单元52,冷却材料被密封在冷却储存器52B中,使得整个冷却单元52被冷却。

    Method of bonding metal to dentine
    34.
    发明授权
    Method of bonding metal to dentine 失效
    将金属与牙质结合的方法

    公开(公告)号:US5049076A

    公开(公告)日:1991-09-17

    申请号:US481583

    申请日:1990-02-20

    申请人: Hiroki Ohno

    发明人: Hiroki Ohno

    CPC分类号: A61K6/0023 A61C5/00

    摘要: A method comprises the steps of applying a gallium alloy in liquid form to the surface of an adherend metallic portion, and forming an alloy layer containing Ga, Sn, In or Zn on the surface of the adherend metallic portion, whereby an excellent adhesive surface having stability and water resistance can be formed on an adherend metallic portion to be contacted to cement or adhesive resin, by a very easy process without the need to use any special apparatus or instruments during the operation of adhesively bonding a resin portion of a denture base to a metallic portion or a dentine to a restorative metallic material such as an inlay, a crown or the like.

    摘要翻译: 一种方法包括以下步骤:将液态的镓合金施加到被粘物金属部分的表面,并在被粘物金属部分的表面上形成含有Ga,Sn,In或Zn的合金层, 可以通过非常容易的方法在粘合剂金属部分上形成稳定性和耐水性,而不需要在将义齿基底的树脂部分粘合地粘合到操作期间使用任何特殊的装置或仪器 金属部分或牙质加工成修复性金属材料,例如嵌体,牙冠等。

    Ion exchange equipment
    35.
    发明申请
    Ion exchange equipment 审中-公开
    离子交换设备

    公开(公告)号:US20090114583A1

    公开(公告)日:2009-05-07

    申请号:US11989633

    申请日:2006-08-22

    IPC分类号: B01J47/02

    CPC分类号: C02F1/42 B01J47/022 B01J49/75

    摘要: Ion exchange equipment which can deal with counter-flow regeneration or split-flow regeneration while simplifying a water collector. The ion exchange equipment comprises a first water collection pipe (14) communicating with a first channel (10) formed in a lid member (7) at a resin containing section (2), and second water collection pipe (20) communicating with a second channel (11) formed in the lid member (7), wherein an inner diameter of the second water collection pipe (20) is set larger than an outer diameter of the first water collection pipe (14). The water collection pipes (14, 20) have axes set coaxially with the axis of the resin containing section (2) and form a double pipe, and a third channel (12) communicating with the resin containing section (2) is formed in the lid member (7).

    摘要翻译: 离子交换设备可以在简化集水器的同时处理逆流再生或分流再生。 离子交换设备包括:第一采水管(14),其与形成在树脂容纳部分(2)的盖构件(7)中的第一通道(10)连通;以及第二采水管(20),其与第二采水管 形成在所述盖部件(7)中的通道(11),其中所述第二吸水管(20)的内径设定为大于所述第一吸水管(14)的外径。 集水管(14,20)具有与树脂容纳部分(2)的轴线同轴的轴并形成双管,并且在该收集管中形成与树脂容纳部分(2)连通的第三通道(12) 盖构件(7)。

    Radio relay device
    37.
    发明申请
    Radio relay device 审中-公开
    无线中继设备

    公开(公告)号:US20050136956A1

    公开(公告)日:2005-06-23

    申请号:US10744526

    申请日:2003-12-23

    申请人: Hiroki Ohno

    发明人: Hiroki Ohno

    IPC分类号: H04B7/155 H04B15/00

    CPC分类号: H04B7/155

    摘要: The object of the present invention is to provide a radio relay device for suppressing the deterioration of voice signals which is generated by relaying radio communication between digital radio units. To achieve this object, the radio relay device of the present invention comprises a radio section for transmitting/receiving ADPCM-coded digital radio signals, a demodulation section for demodulating the digital radio signals received by the radio section and acquiring ADPCM codes, a voice quality improvement circuit for removing the clicking noises included in the ADPCM codes which were demodulated by the demodulation section, and a modulation section for modulating the ADPCM codes after the clicking noises are removed by the voice quality improvement circuit, and supplying the modulation signals to the radio section.

    摘要翻译: 本发明的目的是提供一种用于抑制通过中继数字无线电单元之间的无线电通信而产生的话音信号的恶化的无线电中继装置。 为了实现该目的,本发明的无线中继装置包括:用于发送/接收ADPCM编码的数字无线电信号的无线电部分,用于解调由无线电部分接收的数字无线电信号并获取ADPCM码的解调部分,语音质量 用于去除由解调部分解调的ADPCM代码中包含的点击噪声的改进电路,以及用于通过语音质量改善电路去除点击噪声之后的ADPCM码的调制部分,并将调制信号提供给无线电 部分。

    Film forming method by radiating a plasma on a surface of a low dielectric constant film
    38.
    发明授权
    Film forming method by radiating a plasma on a surface of a low dielectric constant film 失效
    通过在低介电常数膜的表面上照射等离子体的成膜方法

    公开(公告)号:US06800546B2

    公开(公告)日:2004-10-05

    申请号:US10095025

    申请日:2002-03-12

    IPC分类号: H01L214763

    摘要: The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.

    摘要翻译: 本发明包括以下步骤:对形成在基板上的低介电常数绝缘膜的表面进行重整工序,该基板包括多孔低介电常数绝缘膜和无孔低介电常数绝缘膜之一,并形成绝缘层 薄膜作为低介电常数绝缘膜的重整表面上的蚀刻掩模和化学机械抛光终止剂(CMP止动器)中的至少一个。 例如,等离子体作为上述重整工序被照射,低介电绝缘膜的表面粗糙度增加,结果,可以改善膜之间以及层间绝缘膜和其它相邻膜之间的粘附性 具有所谓的“锚效应”。

    Manufacturing method of liquid crystal display panel and cleaning
apparatus for use therein
    39.
    发明授权
    Manufacturing method of liquid crystal display panel and cleaning apparatus for use therein 有权
    液晶显示面板的制造方法及其使用的清洗装置

    公开(公告)号:US6118511A

    公开(公告)日:2000-09-12

    申请号:US294331

    申请日:1999-04-20

    CPC分类号: G02F1/1333 G02F1/133784

    摘要: A manufacturing method of a liquid crystal display panel of high display quality is provided, in which any foreign matter or stain on the surface of a substrate can be completely removed and occurrence of irregular orientation or spot is prevented in the cleaning step after rubbing in the manufacturing process of the liquid crystal display panel. A cleaning apparatus for carrying out the manufacturing method is also provided.In the cleaning step after rubbing, as a pre-cleaning treatment, the surface of the glass substrate 1 is sufficiently covered by the mist-like particles 20 sprayed from a binary fluid nozzle 7 to the extent that the water does not move. Then, the glass substrate 1 is subject to a wet cleaning such as supersonic wave cleaning.

    摘要翻译: 提供了一种高显示质量的液晶显示面板的制造方法,其中可以完全去除基板表面上的任何异物或污渍,并且在清洗步骤中在摩擦后不会发生不规则取向或斑点 液晶显示面板的制造工艺。 还提供了一种用于执行制造方法的清洁装置。 在摩擦后的清洗步骤中,作为预清洗处理,玻璃基板1的表面被从二元流体喷嘴7喷射的雾状颗粒20充分地覆盖到水不移动的程度。 然后,对玻璃基板1进行超声波清洗等湿式清洗。

    Washing liquid for post-polishing and polishing-cleaning method in
semiconductor process
    40.
    发明授权
    Washing liquid for post-polishing and polishing-cleaning method in semiconductor process 失效
    用于后抛光的洗涤液和半导体工艺中的抛光清洗方法

    公开(公告)号:US5830280A

    公开(公告)日:1998-11-03

    申请号:US818724

    申请日:1997-03-14

    CPC分类号: H01L21/02074 H01L21/3212

    摘要: A polishing treatment called CMP (chemical mechanical polishing) is utilized for filling a contact hole formed in a silicon oxide film with a metallic layer in a manufacturing process of a semiconductor device. After a CMP treatment, a target surface, on which the silicon oxide film and the metallic layer are exposed, is washed with a washing liquid so as to remove residues due to the CMP treatment. The washing liquid comprises a fluorine compound for providing an etchant for the silicon oxide film and the metallic layer, and a protective agent which can be adhered onto a surface of the metallic layer so as to form a protective film. The ratio between the fluorine compound and the protective agent is set such that etching rates of the silicon oxide film and the metallic layer to be effected by the washing liquid fall within ranges of from 0.5 nm/min to 5 nm/min and from 0.5 nm/min to 6 nm/min, respectively, and a ratio between these etching rates falls within a range of from "2:1" to "1:3".

    摘要翻译: 在半导体器件的制造工艺中,利用称为CMP(化学机械抛光)的抛光处理来填充形成在具有金属层的氧化硅膜中的接触孔。 在CMP处理之后,用清洗液清洗其上露出氧化硅膜和金属层的目标表面,以便除去由CMP处理引起的残留物。 洗涤液包含用于提供氧化硅膜和金属层的蚀刻剂的氟化合物,以及可以粘附在金属层的表面上以形成保护膜的保护剂。 氟化合物和保护剂之间的比率设定为使得由洗涤液体进行的氧化硅膜和金属层的蚀刻速率在0.5nm / min至5nm / min和0.5nm的范围内 /分钟〜6nm /分钟,这些蚀刻速度之间的比例落入“2:1”至“1:3”的范围内。