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    Substrate processing method and substrate processing apparatus
    4.
    发明授权
    Substrate processing method and substrate processing apparatus 有权
    基板处理方法和基板处理装置

    公开(公告)号：US07806989B2

    公开(公告)日：2010-10-05

    申请号：US11394337

    申请日：2006-03-31

    申请人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

    发明人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

    IPC分类号： B08B3/00 ,  B08B7/04

    CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

    摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

    摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

    Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method
    5.
    发明申请
    Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
    基板清洁装置，基板清洗方法和用于该方法的记录程序的介质

    公开(公告)号：US20070175501A1

    公开(公告)日：2007-08-02

    申请号：US10593560

    申请日：2005-04-05

    申请人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

    发明人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

    IPC分类号： B08B3/00

    CPC分类号： H01L21/67051 ,  B08B1/04 ,  H01L21/67046

    摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

    摘要翻译： 在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从 衬底W的中心部分朝向其周边部分。 由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。 在刷子3的清洁位置Sb从基板W的中心部朝向其周边部移动的过程中，双流体喷嘴的清洁位置Sb位于更靠近中心P 0 < >刷3的清洁位置Sb。 由于防止刷子的污染再次粘附到晶片上，所以可以避免晶片W被污染。

    Processing apparatus and processing method
    6.
    发明授权
    Processing apparatus and processing method 有权
    处理装置及处理方法

    公开(公告)号：US06895979B2

    公开(公告)日：2005-05-24

    申请号：US10359208

    申请日：2003-02-06

    申请人： Kyouji Kohama ,  Eiji Shimbo ,  Yuji Kamikawa ,  Takayuki Toshima ,  Hiroki Ohno

    发明人： Kyouji Kohama ,  Eiji Shimbo ,  Yuji Kamikawa ,  Takayuki Toshima ,  Hiroki Ohno

    IPC分类号： H01L21/304 ,  B08B3/02 ,  B08B3/10 ,  H01L21/00

    CPC分类号： H01L21/67086 ,  B08B3/02 ,  B08B3/102 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  Y10S134/902

    摘要： A processing apparatus essentially includes a rotatable rotor 21 for carrying semiconductor wafers W, a motor 22 for driving to rotate the rotor 21, a plurality of processing chambers for surrounding the wafers W carried by the rotor 21, for example, an inner chamber 23 and an outer chamber 24, a chemical supplying unit 50, an IPA supplying unit 60, a rinse supplying unit 70 and a drying fluid supplying unit 80. With this constitution of the apparatus, it is possible to prevent the wafers from being contaminated due to the reaction of treatment liquids of different kinds, with the improvement of processing efficiency and miniaturization of the apparatus.

    摘要翻译： 一种处理装置主要包括用于承载半导体晶片W的可旋转转子21，用于驱动转子21旋转的电动机22，用于围绕由转子21承载的晶片W的多个处理室，例如内室23和 外部室24，化学品供应单元50，IPA供应单元60，漂洗供应单元70和干燥流体供应单元80.通过该设备的这种结构，可以防止晶片被 不同种类的处理液的反应，提高了加工效率和设备的小型化。

    Film forming method and film forming apparatus
    7.
    发明申请
    Film forming method and film forming apparatus 审中-公开
    成膜方法和成膜装置

    公开(公告)号：US20050026454A1

    公开(公告)日：2005-02-03

    申请号：US10927102

    申请日：2004-08-27

    申请人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

    发明人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

    IPC分类号： H01L21/20 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76837 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

    摘要： The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.

    摘要翻译： 本发明包括以下步骤：对形成在基板上的低介电常数绝缘膜的表面进行重整工序，该基板包括多孔低介电常数绝缘膜和无孔低介电常数绝缘膜之一，并形成绝缘层 薄膜作为低介电常数绝缘膜的重整表面上的蚀刻掩模和化学机械抛光终止剂（CMP止动器）中的至少一个。 例如，等离子体作为上述重整工序被照射，低介电绝缘膜的表面粗糙度增加，结果，可以改善膜之间以及层间绝缘膜和其它相邻膜之间的粘附性 具有所谓的“锚效应”。

    Substrate processing apparatus and substrate processing method
    8.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号：US08056257B2

    公开(公告)日：2011-11-15

    申请号：US11984100

    申请日：2007-11-13

    申请人： Hiroki Ohno ,  Kenji Sekiguchi

    发明人： Hiroki Ohno ,  Kenji Sekiguchi

    IPC分类号： F26B3/00

    CPC分类号： H01L21/02057 ,  H01L21/02052 ,  H01L21/67023 ,  H01L21/67051

    摘要： A substrate processing apparatus includes a chamber, and a cleaning-liquid supply unit that supplies a cleaning liquid containing hydrofluoro ether onto a substrate to be processed placed in the chamber. In the chamber, there is further disposed a gas supply unit that supplies into the chamber a gas for preventing moisture from being adhered to a substrate to be processed, when a cleaning liquid containing hydrofluoro ether is supplied onto the substrate to be processed.

    摘要翻译： 基板处理装置包括：室，以及清洗液供给单元，其将含有氢氟醚的清洗液供给到被处理的基板上。 在室内还设置有一个气体供给单元，当含有氢氟醚的清洗液体被供给到待处理的基板上时，该气体供给单元将用于防止湿气附着在被处理基板上的气体供给到室内。

    Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method
    9.
    发明授权
    Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
    基板清洁装置，基板清洗方法和用于该方法的记录程序的介质

    公开(公告)号：US07803230B2

    公开(公告)日：2010-09-28

    申请号：US10593560

    申请日：2005-04-05

    申请人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

    发明人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

    IPC分类号： B08B7/00

    CPC分类号： H01L21/67051 ,  B08B1/04 ,  H01L21/67046

    摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

    摘要翻译： 在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从 衬底W的中心部分朝向其周边部分。 由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。 在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中，双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置 由于刷子的污染被防止再次粘附到晶片，因此可以避免晶片W被污染。

    Substrate processing apparatus and substrate processing method
    10.
    发明申请
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号：US20080127508A1

    公开(公告)日：2008-06-05

    申请号：US11984100

    申请日：2007-11-13

    申请人： Hiroki Ohno ,  Kenji Sekiguchi

    发明人： Hiroki Ohno ,  Kenji Sekiguchi

    IPC分类号： F26B19/00 ,  F26B21/10 ,  F26B25/08

    CPC分类号： H01L21/02057 ,  H01L21/02052 ,  H01L21/67023 ,  H01L21/67051

    摘要： A substrate processing apparatus includes a chamber, and a cleaning-liquid supply unit that supplies a cleaning liquid containing hydrofluoro ether onto a substrate to be processed placed in the chamber. In the chamber, there is further disposed a gas supply unit that supplies into the chamber a gas for preventing moisture from being adhered to a substrate to be processed, when a cleaning liquid containing hydrofluoro ether is supplied onto the substrate to be processed.

    摘要翻译： 基板处理装置包括：室，以及清洗液供给单元，其将含有氢氟醚的清洗液供给到被处理的基板上。 在室内还设置有一个气体供给单元，当含有氢氟醚的清洗液体被供给到待处理的基板上时，该气体供给单元将用于防止湿气附着在被处理基板上的气体供给到室内。