公开(公告)号：US20090238229A1

公开(公告)日：2009-09-24

申请号：US12406533

申请日：2009-03-18

申请人： Yoshinobu KAWAGUCHI ,  Takeshi Kamikawa

发明人： Yoshinobu KAWAGUCHI ,  Takeshi Kamikawa

IPC分类号： H01S5/125 ,  H01S5/323

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/141 ,  H01S5/2215 ,  H01S5/34333

摘要： Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less.

摘要翻译： 公开了包括由氮化物半导体制成的发光部分的氮化物半导体激光元件和使用它的外腔半导体激光器件。 在氮化物半导体激光元件中，在发光部分上形成由氮氧化硅制成的涂膜，并且涂膜对从发光部分发射的激光的反射光的反射率为0.5％以下。

公开(公告)号：US20090236585A1

公开(公告)日：2009-09-24

申请号：US12366480

申请日：2009-02-05

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L33/00 ,  H01S5/00 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US20090116528A1

公开(公告)日：2009-05-07

申请号：US12285337

申请日：2008-10-02

申请人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa ,  Shigetoshi Ito

发明人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa ,  Shigetoshi Ito

IPC分类号： H01S5/04

CPC分类号： H01S5/32341 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/2214 ,  H01S5/3202

摘要： A nitride semiconductor laser device has a multilayer structure formed by stacking a plurality of nitride semiconductor layers made of hexagonal nitride semiconductors, while the multilayer structure is provided with a waveguide structure for guiding a laser beam, the nitride semiconductor layers forming the multilayer structure are stacked in a direction substantially perpendicular to the c-axes of the hexagonal nitride semiconductors constituting the nitride semiconductor layers, a first cavity facet forming a side surface of the waveguide structure is a c-plane having Ga-polarity, a second cavity facet forming another side surface of the waveguide structure opposed to the first cavity facet is a c-plane having N-polarity, a crystalline nitrogen-containing film is formed on the surface of the first cavity facet, and the reflectance of the first cavity facet is smaller than the reflectance of the second cavity facet.

摘要翻译： 氮化物半导体激光器件具有通过堆叠由六方氮化物半导体制成的多个氮化物半导体层而形成的多层结构，而多层结构设置有用于引导激光束的波导结构，形成多层结构的氮化物半导体层被堆叠 在与构成氮化物半导体层的六方氮化物半导体的c轴大致垂直的方向上，形成波导结构的侧面的第一空腔面是具有Ga极性的c面，形成另一侧的第二腔面 与第一腔面相对的波导结构的表面是具有N极性的c面，在第一腔面的表面上形成结晶含氮膜，第一腔面的反射率小于 第二腔面的反射率。

公开(公告)号：US20080291961A1

公开(公告)日：2008-11-27

申请号：US12153756

申请日：2008-05-23

申请人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01S5/323 ,  H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/028 ,  H01S5/2036 ,  H01S5/22

摘要： There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.

摘要翻译： 提供一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件，该发光部分由氮化物半导体形成，与发光部分接触的涂膜由氮氧化物形成。 还提供了一种制造氮化物半导体激光器件的方法，该器件具有具有涂覆有涂膜的小面的空腔，包括以下步骤：提供切割以形成腔的小平面; 并用由氮氧化物形成的涂膜涂覆空腔的小平面。

公开(公告)号：US07361518B2

公开(公告)日：2008-04-22

申请号：US11137352

申请日：2005-05-26

申请人： Takeshi Kamikawa

发明人： Takeshi Kamikawa

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0201 ,  H01S5/0206 ,  H01S5/0207 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A nitride semiconductor growth layer is laid on a substrate having an engraved region provided with a depressed portion.

摘要翻译： 氮化物半导体生长层被放置在具有设置有凹陷部的雕刻区域的基板上。

公开(公告)号：US06603146B1

公开(公告)日：2003-08-05

申请号：US09684279

申请日：2000-10-06

申请人： Toshio Hata ,  Taiji Morimoto ,  Takeshi Kamikawa ,  Kensaku Yamamoto

发明人： Toshio Hata ,  Taiji Morimoto ,  Takeshi Kamikawa ,  Kensaku Yamamoto

IPC分类号： H01L2715

CPC分类号： H01L33/44 ,  H01L33/42 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/8592 ,  Y10S257/918 ,  H01L2924/00

摘要： A semiconductor light-emitting device includes: a substrate; a semiconductor layer including at least one light-emitting region; a metal layer having a light transmitting characteristic; a first fluorescent material layer for converting at least a portion of first light emitted from the light-emitting region into second light having a different wavelength from the first light; and an oxide semiconductor layer formed between the metal layer and the first fluorescent material layer, and having a light-transmitting characteristic.

摘要翻译： 一种半导体发光器件包括：衬底; 包括至少一个发光区域的半导体层; 具有透光特性的金属层; 用于将从发光区域发射的第一光的至少一部分转换成具有与第一光不同的波长的第二光的第一荧光材料层; 以及形成在金属层和第一荧光体层之间并具有透光特性的氧化物半导体层。

公开(公告)号：US20100316082A1

公开(公告)日：2010-12-16

申请号：US12785523

申请日：2010-05-24

申请人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

发明人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

IPC分类号： H01S5/323

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0282 ,  H01S5/22

摘要： A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region.

摘要翻译： 提供氮化物半导体激光器芯片，其即使在高输出时也提供足够的可靠性。 氮化物半导体激光器芯片具有形成在衬底上的氮化物半导体层，形成在氮化物半导体层上的谐振器面，以及形成在谐振器面上并包含Ar的涂膜。 涂膜在与谐振器面相邻并且在其附近的区域中具有低Ar含量的低Ar区，并且在与谐振器面相反的该低Ar区一侧具有高Ar Ar含量高于低Ar区的区域。

公开(公告)号：US07820542B2

公开(公告)日：2010-10-26

申请号：US12659149

申请日：2010-02-26

申请人： Masahumi Kondou ,  Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Masahumi Kondou ,  Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01L21/3205

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/2231 ,  H01S5/34333

摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.

摘要翻译： 在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。 以这种方式，获得其中将小面涂层铺设在粘合层上的结构。

公开(公告)号：US07792169B2

公开(公告)日：2010-09-07

申请号：US11713760

申请日：2007-03-05

申请人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

发明人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

IPC分类号： H01S3/04

CPC分类号： H01S5/0287 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/221 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00

摘要： A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

摘要翻译： 氮化物半导体发光器件包括在第一涂膜上形成的在发光部分形成的氮化铝或氮氧化铝的第一涂膜和氧化铝的第二涂膜。 第二涂膜的厚度为80nm以上1000nm以下。 这里，第一涂膜的厚度优选为6nm以上200nm以下。

公开(公告)号：US07763527B2

公开(公告)日：2010-07-27

申请号：US12040076

申请日：2008-02-29

申请人： Takeshi Kamikawa

发明人： Takeshi Kamikawa

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0201 ,  H01S5/0206 ,  H01S5/0207 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A nitride semiconductor growth layer is laid on a substrate having an engraved region provided with a depressed portion.

摘要翻译： 氮化物半导体生长层被放置在具有设置有凹陷部的雕刻区域的基板上。