公开(公告)号：US06603146B1

公开(公告)日：2003-08-05

申请号：US09684279

申请日：2000-10-06

申请人： Toshio Hata ,  Taiji Morimoto ,  Takeshi Kamikawa ,  Kensaku Yamamoto

发明人： Toshio Hata ,  Taiji Morimoto ,  Takeshi Kamikawa ,  Kensaku Yamamoto

IPC分类号： H01L2715

CPC分类号： H01L33/44 ,  H01L33/42 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/8592 ,  Y10S257/918 ,  H01L2924/00

摘要： A semiconductor light-emitting device includes: a substrate; a semiconductor layer including at least one light-emitting region; a metal layer having a light transmitting characteristic; a first fluorescent material layer for converting at least a portion of first light emitted from the light-emitting region into second light having a different wavelength from the first light; and an oxide semiconductor layer formed between the metal layer and the first fluorescent material layer, and having a light-transmitting characteristic.

摘要翻译： 一种半导体发光器件包括：衬底; 包括至少一个发光区域的半导体层; 具有透光特性的金属层; 用于将从发光区域发射的第一光的至少一部分转换成具有与第一光不同的波长的第二光的第一荧光材料层; 以及形成在金属层和第一荧光体层之间并具有透光特性的氧化物半导体层。

公开(公告)号：US06969873B2

公开(公告)日：2005-11-29

申请号：US09775838

申请日：2001-02-01

申请人： Toshio Hata ,  Kensaku Yamamoto ,  Taiji Morimoto

发明人： Toshio Hata ,  Kensaku Yamamoto ,  Taiji Morimoto

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/34 ,  H01L33/42 ,  H01L33/62 ,  H01L29/22

CPC分类号： H01L33/42 ,  H01L24/05 ,  H01L24/32 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00

摘要： A gallium nitride compound semiconductor light emission device includes: a substrate; an n-type electrode region comprising an n-type transmissive electrode; a gallium nitride compound semiconductor multilayer structure including an active layer; and a p-type electrode region comprising a p-type transmissive electrode. The p-type transmissive electrode and the n-type transmissive electrode transmit light which is generated in the active layer and reflected from the substrate so that the light exits the light emission device.

摘要翻译： 氮化镓化合物半导体发光器件包括：衬底; 包括n型透射电极的n型电极区域; 包括有源层的氮化镓化合物半导体多层结构; 以及包括p型透射电极的p型电极区域。 p型透射电极和n型透射电极透射在有源层中产生并从衬底反射的光，使得光离开发光器件。

公开(公告)号：US5932004A

公开(公告)日：1999-08-03

申请号：US861762

申请日：1997-05-22

申请人： Taiji Morimoto ,  Zenkichi Shibata ,  Takashi Ishizumi ,  Keisuke Miyazaki ,  Toshio Hata ,  Yoshinori Ohitsu

发明人： Taiji Morimoto ,  Zenkichi Shibata ,  Takashi Ishizumi ,  Keisuke Miyazaki ,  Toshio Hata ,  Yoshinori Ohitsu

IPC分类号： H01S5/00 ,  H01L33/30 ,  H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  C30B19/06

CPC分类号： H01S5/305 ,  H01L33/305 ,  H01S5/0421 ,  H01S5/32308 ,  H01S2304/06 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/32316

摘要： A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked on a substrate. Then a clad layer composed of p-type AlGaAs doped with a p-type impurity Mg, and a contact layer composed of p-type GaAs doped also with Mg are grown by an LPE growth process, and further a surface layer having a high-resistance portion present in the contact layer and low in carrier concentration is removed. The active layer for use of laser beam oscillation is arranged in a substantially center of an end surface from which the laser beam is emitted.

摘要翻译： 提供了具有高性能，低工作电压和长使用寿命的半导体激光器件及其制造方法。 包括用于激光束振荡的有源层的半导体多层膜堆叠在基板上。 然后，通过LPE生长法生长由掺杂有p型杂质Mg的p型AlGaAs构成的包层和由Mg掺杂的由p型GaAs构成的接触层， 存在于接触层中的电阻部分和载流子浓度低。 用于激光束振荡的有源层被布置在发射激光束的端面的大致中心。

公开(公告)号：US08421088B2

公开(公告)日：2013-04-16

申请号：US12035320

申请日：2008-02-21

申请人： Masahiro Konishi ,  Toshio Hata ,  Taiji Morimoto

发明人： Masahiro Konishi ,  Toshio Hata ,  Taiji Morimoto

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L33/644 ,  H01L2224/48091 ,  H01L2924/00014

摘要： This invention provides a surface mounting type light emitting diode excellent in heat radiation performance, reliability and productivity. The surface mounting type light emitting diode includes an insulating base member, a semiconductor light emitting element having a bottom face fixedly bonded to a top face of the base member, and a metallic reflector joined to the top face of the base member with a heat conduction type adhesive sheet interposed therebetween, to surround the semiconductor light emitting element. Heat generated from the semiconductor light emitting element is transferred to the reflector via the base member and the heat conduction type adhesive sheet, and then is radiated to the outside. The metallic reflector can efficiently radiate the heat to the outside. The cutting margin provided for the reflector facilitates a dicing process, which improves productivity.

摘要翻译： 本发明提供了散热性能，可靠性和生产率优异的表面安装型发光二极管。 表面安装型发光二极管包括绝缘基底构件，具有固定地接合到基底构件的顶面的底面的半导体发光元件和与基底构件的顶面接合的金属反射体，具有热传导 以夹持半导体发光元件。 从半导体发光元件产生的热量经由基底部件和导热型粘合片传递到反射体，然后被照射到外部。 金属反射器可以有效地将热量辐射到外部。 为反射器提供的切割边缘有助于切割过程，从而提高生产率。

公开(公告)号：US20080203416A1

公开(公告)日：2008-08-28

申请号：US12035216

申请日：2008-02-21

申请人： Masahiro KONISHI ,  Toshio Hata ,  Taiji Morimoto

发明人： Masahiro KONISHI ,  Toshio Hata ,  Taiji Morimoto

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/644 ,  H01L33/486 ,  H01L33/60 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/00014

摘要： This invention provides a surface mounting type light emitting diode excellent in heat radiation performance, reliability and productivity. The surface mounting type light emitting diode includes a metallic base member, a semiconductor light emitting element having a bottom face fixedly bonded to a top face of the base member, and a metallic reflector joined to the top face of the base member with a heat conduction type adhesive sheet interposed therebetween, to surround the semiconductor light emitting element. Heat generated from the semiconductor light emitting element is transferred to the reflector via the base member and the heat conduction type adhesive sheet, and then is radiated to the outside. The metallic reflector can efficiently radiate the heat to the outside. The cutting margin provided for the reflector facilitates a dicing process, which improves productivity.

摘要翻译： 本发明提供了散热性能，可靠性和生产率优异的表面安装型发光二极管。 表面安装型发光二极管包括金属基底构件，具有固定地接合到基底构件的顶面的底面的半导体发光元件和与基底构件的顶面接合的金属反射体，其具有热传导 以夹持半导体发光元件。 从半导体发光元件产生的热量经由基底部件和导热型粘合片传递到反射体，然后被照射到外部。 金属反射器可以有效地将热量辐射到外部。 为反射器提供的切割边缘有助于切割过程，从而提高生产率。

公开(公告)号：US07872418B2

公开(公告)日：2011-01-18

申请号：US12051602

申请日：2008-03-19

申请人： Toshio Hata ,  Masahiro Konishi ,  Makoto Agatani ,  Taiji Morimoto

发明人： Toshio Hata ,  Masahiro Konishi ,  Makoto Agatani ,  Taiji Morimoto

IPC分类号： H01L33/00

CPC分类号： H01B1/10 ,  F21K9/232 ,  F21Y2115/10 ,  H01L24/45 ,  H01L24/73 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01047 ,  H01L2924/01063 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： By using a light emitting device including a substrate and a light emitting unit, the light emitting unit including: a plurality of light emitting elements that are mounted on substrate and electrically connected to external electrodes; a first sealing member layer containing a first fluorescent material, formed to cover light emitting elements; and a second sealing member layer containing a second fluorescent material, formed on first sealing member layer, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device capable of suppressing color shifts and the like by the fluorescent materials, and of being easily manufactured, as well as a method for manufacturing the same.

摘要翻译： 通过使用包括基板和发光单元的发光装置，所述发光单元包括：多个发光元件，其安装在基板上并电连接到外部电极; 包含形成为覆盖发光元件的第一荧光材料的第一密封元件层; 以及形成在第一密封部件层上的包含第二荧光材料的第二密封部件层及其制造方法，能够提供能够抑制荧光材料的色移等的发光元件， 并且易于制造，以及其制造方法。

公开(公告)号：US20080029779A1

公开(公告)日：2008-02-07

申请号：US11882598

申请日：2007-08-02

申请人： Toshio Hata ,  Hideaki Tatsuta ,  Hiromu Tagashira ,  Taiji Morimoto

发明人： Toshio Hata ,  Hideaki Tatsuta ,  Hiromu Tagashira ,  Taiji Morimoto

IPC分类号： H01L33/00 ,  B05C9/00 ,  H01L21/02

CPC分类号： B29C45/02 ,  B29C45/14655 ,  B29K2995/0018 ,  B41F15/12 ,  B41F15/40 ,  H01L33/20 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0041 ,  H01L2924/00 ,  H01L2924/00014

摘要： A fluorescence-containing material injection apparatus of the present invention includes a fluorescence-containing material temperature control section, a fluorescence-containing material stirring section, a fluorescence-containing material remaining amount sensor, and a fluorescence-containing material injection amount adjustment section, by which disproportion in the mixture ratio of contaminates in a fluorescence-containing material M is restrained. This makes it possible to evenly apply a fluorescence-containing material onto a semiconductor light emitting element.

摘要翻译： 本发明的含荧光材料注入装置包括含荧光的材料温度控制部分，含荧光材料搅拌部分，含荧光物质剩余量传感器和含荧光物质注入量调节部分，由 抑制含荧光材料M中污染物的混合比例的不均衡。 这使得可以将含荧光的材料均匀地施加到半导体发光元件上。

公开(公告)号：US08604506B2

公开(公告)日：2013-12-10

申请号：US12035216

申请日：2008-02-21

申请人： Masahiro Konishi ,  Toshio Hata ,  Taiji Morimoto

发明人： Masahiro Konishi ,  Toshio Hata ,  Taiji Morimoto

IPC分类号： H01L33/00

CPC分类号： H01L33/644 ,  H01L33/486 ,  H01L33/60 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/00014

摘要： This invention provides a surface mounting type light emitting diode excellent in heat radiation performance, reliability and productivity. The surface mounting type light emitting diode includes a metallic base member, a semiconductor light emitting element having a bottom face fixedly bonded to a top face of the base member, and a metallic reflector joined to the top face of the base member with a heat conduction type adhesive sheet interposed therebetween, to surround the semiconductor light emitting element. Heat generated from the semiconductor light emitting element is transferred to the reflector via the base member and the heat conduction type adhesive sheet, and then is radiated to the outside. The metallic reflector can efficiently radiate the heat to the outside. The cutting margin provided for the reflector facilitates a dicing process, which improves productivity.

摘要翻译： 本发明提供了散热性能，可靠性和生产率优异的表面安装型发光二极管。 表面安装型发光二极管包括金属基底构件，具有固定地接合到基底构件的顶面的底面的半导体发光元件和与基底构件的顶面接合的金属反射体，其具有热传导 以夹持半导体发光元件。 从半导体发光元件产生的热量经由基底部件和导热型粘合片传递到反射体，然后被照射到外部。 金属反射器可以有效地将热量辐射到外部。 为反射器提供的切割边缘有助于切割过程，从而提高生产率。

公开(公告)号：US07938636B2

公开(公告)日：2011-05-10

申请号：US11882598

申请日：2007-08-02

申请人： Toshio Hata ,  Hideaki Tatsuta ,  Hiromu Tagashira ,  Taiji Morimoto

发明人： Toshio Hata ,  Hideaki Tatsuta ,  Hiromu Tagashira ,  Taiji Morimoto

IPC分类号： B29C41/36 ,  B29C41/52 ,  B41F15/44

CPC分类号： B29C45/02 ,  B29C45/14655 ,  B29K2995/0018 ,  B41F15/12 ,  B41F15/40 ,  H01L33/20 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0041 ,  H01L2924/00 ,  H01L2924/00014

摘要： A fluorescence-containing material injection apparatus of the present invention includes a fluorescence-containing material temperature control section, a fluorescence-containing material stirring section, a fluorescence-containing material remaining amount sensor, and a fluorescence-containing material injection amount adjustment section, by which disproportion in the mixture ratio of contaminates in a fluorescence-containing material M is restrained. This makes it possible to evenly apply a fluorescence-containing material onto a semiconductor light emitting element.

摘要翻译： 本发明的含荧光材料注入装置包括含荧光的材料温度控制部分，含荧光材料搅拌部分，含荧光物质剩余量传感器和含荧光物质注入量调节部分，由 抑制含荧光材料M中污染物的混合比例的不均衡。 这使得可以将含荧光的材料均匀地施加到半导体发光元件上。

公开(公告)号：US6009113A

公开(公告)日：1999-12-28

申请号：US210564

申请日：1998-12-15

申请人： Taiji Morimoto ,  Zenkichi Shibata ,  Takashi Ishizumi ,  Keisuke Miyazaki ,  Toshio Hata ,  Yoshinori Ohitsu

发明人： Taiji Morimoto ,  Zenkichi Shibata ,  Takashi Ishizumi ,  Keisuke Miyazaki ,  Toshio Hata ,  Yoshinori Ohitsu

IPC分类号： H01L33/30 ,  H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32308 ,  H01L33/305 ,  H01S5/0421 ,  H01S5/305 ,  H01S2304/06 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/32316

摘要： A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked on a substrate. Then a clad layer composed of p-type AlGaAs doped with a p-type impurity Mg, and a contact layer composed of p-type GaAs doped also with Mg are grown by an LPE growth process, and further a surface layer having a high-resistance portion present in the contact layer and low in carrier concentration is removed. The active layer for use of laser beam oscillation is arranged in a substantially center of an end surface from which the laser beam is emitted.

摘要翻译： 提供了具有高性能，低工作电压和长使用寿命的半导体激光器件及其制造方法。 包括用于激光束振荡的有源层的半导体多层膜堆叠在基板上。 然后，通过LPE生长法生长由掺杂有p型杂质Mg的p型AlGaAs构成的包层和由Mg掺杂的由p型GaAs构成的接触层， 存在于接触层中的电阻部分和载流子浓度低。 用于激光束振荡的有源层被布置在发射激光束的端面的大致中心。