Charged particle beam drawing equipment, method of adjusting aperture mask, and method of manufacturing semiconductor device
    31.
    发明申请
    Charged particle beam drawing equipment, method of adjusting aperture mask, and method of manufacturing semiconductor device 失效
    带电粒子束拉制设备,调整孔径掩模的方法和制造半导体器件的方法

    公开(公告)号:US20060017013A1

    公开(公告)日:2006-01-26

    申请号:US11172996

    申请日:2005-07-05

    IPC分类号: G21G5/00 A61N5/00

    摘要: A charged particle beam drawing equipment includes charged particle beam source, first and second shaping aperture masks with first and second opening portions for rotation adjustment, detection section to detect charged particle beam intensity distribution in a plane parallel to the second mask, the beam being emitted from the source and passing through the opening portions, rotation angle control section to control relative rotation angle between the masks, acquisition section to acquire relative rotation angle between the masks such that deviation in relative rotation angle between the masks falls within a predetermined range based on detection results obtained by changing the relative rotation angle between the masks plural times by the control section and by detecting the beam by the detection section for each rotation angle, and instruction section to instruct the rotation angle control section such that the relative rotation angle between the masks be the acquired rotation angle.

    摘要翻译: 带电粒子束拉制设备包括带电粒子束源,具有用于旋转调节的第一和第二开口部分的第一和第二成形孔径掩模,用于检测平行于第二掩模的平面中的带电粒子束强度分布的检测部分, 从源极通过开口部分,旋转角度控制部分,以控制掩模之间的相对旋转角度,获取部分,以获得掩模之间的相对旋转角度,使得掩模之间的相对旋转角度的偏差落在预定范围内,基于 通过控制部分多次改变掩模之间的相对旋转角度并且通过每个旋转角度由检测部分检测光束而获得的检测结果,以及指令部分,其指示旋转角度控制部分,使得旋转角度控制部分之间的相对旋转角度 掩模是获得的旋转角度 。

    Electron beam lithography system, method of electron beam lithography, program and method for manufacturing a semiconductor device with direct writing
    32.
    发明申请
    Electron beam lithography system, method of electron beam lithography, program and method for manufacturing a semiconductor device with direct writing 失效
    电子束光刻系统,电子束光刻方法,用于制造具有直接写入的半导体器件的程序和方法

    公开(公告)号:US20050256600A1

    公开(公告)日:2005-11-17

    申请号:US11097357

    申请日:2005-04-04

    申请人: Tetsuro Nakasugi

    发明人: Tetsuro Nakasugi

    摘要: An electron beam lithography system includes: a lithography tool writing patterns onto substrates, which are classified into lots, respectively, using sequentially apertures through which electron beams, based on a specific processing procedures; an aperture manager managing the apertures; a request obtaining module obtaining processing requests of the lots; a processing procedure storing file storing processing procedures; a processing time calculating module calculating corresponding processing times of the lots using the apertures based on corresponding processing procedures defined for each of the lots; and an order deciding module deciding an order of processing the lots based on the processing times.

    摘要翻译: 电子束光刻系统包括:光刻工具,将基板上的图案分别按照特定的处理程序依次分成多个电子束; 管理孔的光圈管理器; 请求获取模块获取批次的处理请求; 存储文件存储处理过程的处理过程; 处理时间计算模块,基于针对每个批次定义的相应处理过程,使用所述孔来计算批次的相应处理时间; 以及基于处理时间决定处理批次的顺序的订单决定模块。

    Correction system, method of correcting deflection distortion, program and method for manufacturing a semiconductor device
    33.
    发明申请
    Correction system, method of correcting deflection distortion, program and method for manufacturing a semiconductor device 失效
    校正系统,偏转失真校正方法,制造半导体器件的程序和方法

    公开(公告)号:US20050088099A1

    公开(公告)日:2005-04-28

    申请号:US10948555

    申请日:2004-09-24

    摘要: A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.

    摘要翻译: 校正偏转失真的方法包括将带电粒子束被偏转的偏转区域划分为相等的初始块作为初始设置,计算当带电粒子束偏转时产生的每个初始块的初始像差量, 根据初始像差量的变化率将偏转区域分成主块; 计算当带电粒子束偏转时产生的每个主要块的主像差量,并且计算校正基于主像差量的偏转失真的校正值。

    Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method
    35.
    发明授权
    Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method 失效
    电子束写入方法,电子束写入装置和半导体器件的制造方法

    公开(公告)号:US07368737B2

    公开(公告)日:2008-05-06

    申请号:US11409987

    申请日:2006-04-25

    IPC分类号: H01J37/08

    摘要: An electron beam writing method is disclosed, which includes preparing electron beam writing data structured from writing pattern data expressed by both data of VSB shots which are units of shaping beams at the time of carrying out writing a pattern and data of CP shots serving as bases of a repeating pattern, and CP aperture data into which identification numbers IDs and opening positions of respective openings of a CP aperture having openings for VSB shots and openings for CP shots are described, inputting the electron beam writing data to an electron beam writing apparatus, and expanding the electron beam writing data into data of the respective shots defined in the electron beam writing data, determining irradiation times of the respective expanded shots while correcting shot positions, and outputting control signals corresponding to shot data to repeat a shot of a desired pattern, by the electron beam writing apparatus.

    摘要翻译: 公开了一种电子束写入方法,其中包括准备电子束写入数据,该电子束写入数据由写入模式数据构成,该模式数据由作为执行写入模式时的整形波束的单元的VSB镜头的数据和用作基础的CP镜头的数据表示 描述了CP电子束写入数据到电子束写入装置的CP孔径数据,CP孔径数据ID和具有用于VSB镜头的开口的CP孔的各个开口的打开位置和CP镜头的开口位置, 并且将电子束写入数据扩展为在电子束写入数据中定义的各个镜头的数据,同时在校正镜头位置的同时确定各个扩展镜头的照射时间,并且输出对应于镜头数据的控制信号以重复所需图案的镜头 ,由电子束写入装置。

    Charged beam exposure apparatus having blanking aperture and basic figure aperture

    公开(公告)号:US07045801B2

    公开(公告)日:2006-05-16

    申请号:US11086589

    申请日:2005-03-23

    申请人: Tetsuro Nakasugi

    发明人: Tetsuro Nakasugi

    IPC分类号: H01J37/02 G21G5/00 G06F17/50

    摘要: Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.

    Charged beam exposure apparatus having blanking aperture and basic figure aperture
    38.
    发明授权
    Charged beam exposure apparatus having blanking aperture and basic figure aperture 失效
    充电光束曝光装置具有遮光孔和基本图形孔径

    公开(公告)号:US06914252B2

    公开(公告)日:2005-07-05

    申请号:US10763175

    申请日:2004-01-26

    申请人: Tetsuro Nakasugi

    发明人: Tetsuro Nakasugi

    摘要: Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.

    摘要翻译: 为带电束产生源准备了两个或多个阶段的掩模。 一个掩模具有布置成格子形状的矩形孔的第一孔径部分和在相应的第一孔径部分偏转梁的电极。 另一个掩模具有第二孔径部分,其具有用于使通过或穿过第一孔部分的梁的成形的基本图形孔。 将半导体装置的布局数据分为基准图的尺寸,这些尺寸考虑到曝光量的降低,以便根据基本图形进行分类。 成形为分割布置的重叠部分的形式的光束和分类的基本图形被发射到样品上。

    Charged particle beam exposure apparatus and exposure method

    公开(公告)号:US06818364B2

    公开(公告)日:2004-11-16

    申请号:US10843431

    申请日:2004-05-12

    申请人: Tetsuro Nakasugi

    发明人: Tetsuro Nakasugi

    IPC分类号: G03F900

    摘要: A charged particle beam exposure apparatus comprises a beam gun, a projection optics, a sample stage loaded with a sample wherein an image projected from the projection optics is to be formed, first marks are formed beforehand, and second marks are exposed to a charged particle beam with a first incident energy by the projection optics in the vicinity of the first marks, a detector detecting an electron signal from a region including the first and second marks, when the region is scanned with a second incident energy different from the first incident energy, a calculation circuit calculating a positional shift between the first and second marks from the detected signal, a correction circuit correcting a position of the first mark based on the calculated positional shift, and an exposure control circuit aligning a desired pattern based on the corrected position of the first mark.

    Charged beam exposure apparatus having blanking aperture and basic figure aperture
    40.
    发明授权
    Charged beam exposure apparatus having blanking aperture and basic figure aperture 失效
    充电光束曝光装置具有遮光孔和基本图形孔径

    公开(公告)号:US06703629B2

    公开(公告)日:2004-03-09

    申请号:US09912365

    申请日:2001-07-26

    申请人: Tetsuro Nakasugi

    发明人: Tetsuro Nakasugi

    IPC分类号: G21K510

    摘要: Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.

    摘要翻译: 为带电束产生源准备了两个或多个阶段的掩模。 一个掩模具有布置成格子形状的矩形孔的第一孔径部分和在相应的第一孔径部分偏转梁的电极。 另一个掩模具有第二孔径部分,其具有用于使通过或穿过第一孔部分的梁的成形的基本图形孔。 将半导体装置的布局数据分为基准图的尺寸,这些尺寸考虑到曝光量的降低,以便根据基本图形进行分类。 成形为分割布置的重叠部分的形式的光束和分类的基本图形被发射到样品上。