Plasma processing apparatus
    31.
    发明授权

    公开(公告)号:US11832373B2

    公开(公告)日:2023-11-28

    申请号:US17949925

    申请日:2022-09-21

    Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

    RF voltage and current (V-I) sensors and measurement methods

    公开(公告)号:US11817296B2

    公开(公告)日:2023-11-14

    申请号:US16913545

    申请日:2020-06-26

    CPC classification number: H01J37/32174 G01R29/0878

    Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

    RADIO FREQUENCY (RF) SYSTEM WITH EMBEDDED RF SIGNAL PICKUPS

    公开(公告)号:US20230132660A1

    公开(公告)日:2023-05-04

    申请号:US17514815

    申请日:2021-10-29

    Abstract: A radio frequency (RF) system including: a first conductive covering surface, a portion of the first conductive covering surface including a portion of the first outer wall of a first RF device; a second conductive covering surface aligned to the first conductive covering surface, the second conductive covering surface being disposed around the insulating hole; an insulating hole for an RF center conductor extending through the first conductive covering surface and the second conductive covering surface, the first conductive covering surface and the second conductive covering surface being disposed around the insulating hole; a cavity bounded by the first conductive covering surface and the second conductive covering surface, the cavity being an insulating region; and an RF signal pickup disposed within the cavity.

    RF voltage and current (V-I) sensors and measurement methods

    公开(公告)号:US11600474B2

    公开(公告)日:2023-03-07

    申请号:US16913526

    申请日:2020-06-26

    Abstract: A radio frequency (RF) system includes a RF power source configured to power a load with an RF signal; an RF pipe including an inner conductor and an outer conductor connected to ground coupling the RF power source to the load; and a current sensor aligned to a central axis of the RF pipe carrying the RF signal. A sensor casing is disposed around the RF pipe, where the sensor casing includes a conductive material connected to the outer conductor of the RF pipe. A gallery is disposed within the sensor casing and outside the outer conductor of the RF pipe, where the current sensor is disposed in the gallery. A slit in the outer conductor of the RF pipe exposes the current sensor to a magnetic field due to the current of the RF signal in the inner conductor of the RF pipe.

    Plasma processing apparatus
    35.
    发明授权

    公开(公告)号:US11470712B2

    公开(公告)日:2022-10-11

    申请号:US16144714

    申请日:2018-09-27

    Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING COIL

    公开(公告)号:US20220108871A1

    公开(公告)日:2022-04-07

    申请号:US17495760

    申请日:2021-10-06

    Abstract: A plasma processing apparatus includes: a main coil disposed on or above a plasma processing chamber; and a sub-coil assembly disposed radially inside or outside the main coil. The sub-coil assembly includes a first spiral coil and a second spiral coil. Each turn of the first spiral coil and each turn of the second spiral coil are alternately arranged in a vertical direction. A first upper terminal of the first spiral coil is connected to a ground potential via one or more capacitors, and a first lower terminal of the first spiral coil is connected to the ground potential. A second upper terminal of the second spiral coil is connected to the ground potential via one or more capacitors or one or more other capacitors, and a second lower terminal of the second spiral coil is connected to the ground potential.

    RF Voltage and Current (V-I) Sensors and Measurement Methods

    公开(公告)号:US20210407770A1

    公开(公告)日:2021-12-30

    申请号:US16913545

    申请日:2020-06-26

    Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

    Plasma processing apparatus
    38.
    发明授权

    公开(公告)号:US10916410B2

    公开(公告)日:2021-02-09

    申请号:US16068696

    申请日:2017-01-10

    Abstract: A plasma processing apparatus includes a processing chamber, a high frequency power supply and a load variation stabilization circuit. The high frequency power supply is configured to supply a high frequency power to the processing chamber and generate plasma inside the processing chamber. The load variation stabilization circuit is connected in parallel with the processing chamber at a connection portion provided between the high frequency power supply and the processing chamber. The load variation stabilization circuit is configured to suppress variation in a load impedance when viewing a downstream side from the connection portion.

    Plasma processing apparatus
    40.
    发明授权

    公开(公告)号:US10679867B2

    公开(公告)日:2020-06-09

    申请号:US15590356

    申请日:2017-05-09

    Inventor: Yohei Yamazawa

    Abstract: A capacitively-coupled plasma processing apparatus includes: at least one chamber body providing chambers separated from each other; upper electrodes respectively installed in upper spaces within the chambers; lower electrodes respectively installed in lower spaces within the chambers; a high frequency power supply; a transformer including a primary coil electrically connected to the high frequency power supply, and secondary coils each of which coils having a first end and a second end; first condensers respectively connected between each of the first ends of the secondary coils and the upper electrodes; and second condensers respectively connected between each of the second ends of the secondary coils and the lower electrodes. The primary coil extends around a central axis. The secondary coils are configured to be coaxially disposed with respect to the primary coil. A self-inductance of each of the secondary coils is smaller than that of the primary coil.

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