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公开(公告)号：US07686971B2
公开(公告)日：2010-03-30
申请号：US11283752
申请日：2005-11-22
申请人： Mitsuo Saitoh , Tomohiro Okumura
发明人： Mitsuo Saitoh , Tomohiro Okumura
CPC分类号： H01J37/3244
摘要： A plasma source includes a gas flow channel formed therein and an electrode which is fed with electric power or grounded to be maintained at a controlled electric potential and a surface of the plasma source including an opening portion of a first gas ejecting port can be placed in parallel to a position at which a to-be-processed object can be placed. The plasma source is connected to a first gas supplying device through a gas supplying port 4 and has a multi-layer construction that is constituted from two or more layers. Gas flow channels within the multi-layer construction include buffer spaces and at least one space cross-sectional area parallel to the opening cross-sectional area of the first gas ejecting ports, out of the cross-sectional areas of the buffer spaces, is greater than the opening cross-sectional area of the first gas ejecting ports.
摘要翻译： 等离子体源包括形成在其中的气体流路和供给电力或接地以保持在受控电位的电极，并且包括第一气体排出口的开口部分的等离子体源的表面可以放置在 平行于可以放置待处理对象的位置。 等离子体源通过气体供给口4与第一气体供给装置连接，具有由两层以上构成的多层结构。 多层结构内的气流通道包括缓冲空间，并且平缓于第一气体喷射口的开口横截面积的至少一个空间横截面积在缓冲空间的横截面积之外更大 比第一气体喷出口的开口横截面积大。
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公开(公告)号：US07465407B2
公开(公告)日：2008-12-16
申请号：US10649670
申请日：2003-08-28
申请人： Mitsuo Saitoh , Tomohiro Okumura , Ichiro Nakayama
发明人： Mitsuo Saitoh , Tomohiro Okumura , Ichiro Nakayama
IPC分类号： C23C16/00
CPC分类号： H01J37/32009 , C23C16/5096 , H01J37/32376
摘要： In a plasma processing method for supplying an electric power to a first electrode, making a first electrode have a ground potential, or making a first electrode have a floating potential while supplying gas to a plasma source arranged in a vicinity of an object to be processed at a pressure in a vicinity of an atmospheric pressure. The method includes processing a part of the object to be processed with a plasma in a state where an area of a surface of a potentially controlled second electrode, arranged in a position opposite to the plasma source via the object to be processed, is made superposed on the object to be processed smaller than an area of a surface of the plasma source superposed on the object to be processed.
摘要翻译： 在用于向第一电极供给电力的等离子体处理方法中，使第一电极具有接地电位，或者使第一电极具有浮置电位，同时向布置在待处理物体附近的等离子体源供给气体 在大气压力附近的压力下。 该方法包括在等离子体处理待处理物体的一部分的状态，其中经由待处理物体布置在与等离子体源相反的位置的潜在受控的第二电极的表面的面积被叠加 对待处理的物体小于叠加在待处理物体上的等离子体源的表面的面积。
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公开(公告)号：US07406925B2
公开(公告)日：2008-08-05
申请号：US10983670
申请日：2004-11-09
CPC分类号： H01J37/32091 , C23C16/4412 , H01J37/32192 , H01J37/3222 , H01J37/3244 , H01J37/32834
摘要： A plasma processing apparatus including a vacuum chamber, a gas supply unit for supplying gas into the vacuum chamber, an exhausting unit for exhausting the interior of the vacuum chamber, a pressure-regulating valve for controlling the interior of the vacuum chamber to a specified pressure, a substrate electrode for placing thereon a substrate within the vacuum chamber, an antenna provided opposite to the substrate electrode, and a high-frequency power supply capable of supplying to the antenna a high-frequency power having a frequency of 50 MHz to 3 GHz. The plasma processing apparatus also has a dielectric plate sandwiched between the antenna and an inner surface of the vacuum chamber, an antenna cover for covering side surfaces of the antenna and the dielectric plate and a substrate-facing surface of the antenna, a slit cover for covering an exposed surface of the substrate-facing inner surface of the vacuum chamber and fixing the antenna cover to a wall surface of the vacuum chamber. Also, a heat-conducting sheet is provided between the antenna and the antenna cover.
摘要翻译： 一种等离子体处理装置，包括真空室，用于向真空室供应气体的气体供应单元，用于排出真空室内部的排气单元，用于将真空室内部控制到特定压力的压力调节阀 ，用于将真空室内的基板放置的基板电极，与基板电极相对设置的天线，以及能够向天线供给频率为50MHz〜3GHz的高频电力的高频电源 。 等离子体处理装置还具有夹在天线和真空室的内表面之间的电介质板，用于覆盖天线和电介质板的侧表面的天线盖和天线的面向基板的表面，狭缝盖 覆盖真空室的面向基板的内表面的暴露表面，并将天线盖固定到真空室的壁表面。 此外，在天线和天线罩之间设置导热片。
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公开(公告)号：US07176402B2
公开(公告)日：2007-02-13
申请号：US10969274
申请日：2004-10-21
IPC分类号： B23K10/00
CPC分类号： H05K3/3489 , H05K3/288 , H05K3/3447 , H05K2201/10287 , H05K2203/095
摘要： An electronic part processing method for peeling off a resin coating of an electronic part having a terminal section. The method includes a step of irradiating, with plasma, a coated wire having copper as a principal constituent and a surface coated with a resin.
摘要翻译： 一种用于剥离具有端子部分的电子部件的树脂涂层的电子部件处理方法。 该方法包括以等离子体照射具有铜作为主要成分的涂覆线和涂覆有树脂的表面的步骤。
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公开(公告)号：US20050082005A1
公开(公告)日：2005-04-21
申请号：US10983670
申请日：2004-11-09
CPC分类号： H01J37/32091 , C23C16/4412 , H01J37/32192 , H01J37/3222 , H01J37/3244 , H01J37/32834
摘要： A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the antenna cover by the slit cover, and fixing the slit cover to a wall surface of the vacuum chamber.
摘要翻译： 一种用于在真空室中产生等离子体并处理放置在基板电极上的基板的等离子体处理方法，所述等离子体是通过将频率为50MHz至3GHz的高频电源提供给与基板电极相对设置的天线而产生的 通过向真空室供给气体并排出真空室的内部，真空室的内部被控制到规定的压力，该方法包括夹在天线和真空室之间的电介质板，天线和 电介质板突出到真空室中，通过设置在天线和真空室之间的环形和凹槽来控制基板上的等离子体分布，并且通过使天线盖固定的状态来处理基板 的狭缝和天线覆盖有天线盖，使狭缝的底面覆盖有狭缝c 通过狭缝盖支撑天线罩，并将狭缝盖固定到真空室的壁面。
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公开(公告)号：US20050040145A1
公开(公告)日：2005-02-24
申请号：US10747059
申请日：2003-12-30
申请人： Tomohiro Okumura , Mitsuo Saitoh
发明人： Tomohiro Okumura , Mitsuo Saitoh
IPC分类号： H01L21/205 , H05H1/48 , B23K10/00
CPC分类号： H05H1/48
摘要： A plasma processing method for processing a linear portion of an object to be processed by generating a linear plasma by supplying an electric power to an electrode provided at a plasma source or the object to be processed while supplying gas to the plasma source arranged in the neighborhood of the object to be processed and making activated particles generated by the plasma act on the object to be processed, the method comprising: detecting an inclination of the plasma source along a direction of an x-axis when the x-axis is taken in a linear direction of the linear portion of the object to be processed; and processing the linear portion of the object to be processed by the generated linear plasma by moving the plasma source along the x-axis direction while maintaining relative positions of the plasma source and the object to be processed so that the detected inclination of the plasma source becomes approximately zero.
摘要翻译： 一种等离子体处理方法，用于通过向设置在等离子体源或待处理物体的电极提供电力而产生线性等离子体，同时向邻近的等离子体源供给气体，从而生成线性部分 的待处理物体和由等离子体产生的活化颗粒作用在待处理物体上，该方法包括：当x轴被取入时，检测等离子体源沿X轴方向的倾斜度 要处理的物体的线性部分的线性方向; 以及通过沿着x轴方向移动等离子体源来处理由所产生的线性等离子体处理的物体的直线部分，同时保持等离子体源和被处理物体的相对位置，使得检测到的等离子体源的倾斜 变成大约零。
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公开(公告)号：US08048476B2
公开(公告)日：2011-11-01
申请号：US11720270
申请日：2006-11-10
CPC分类号： H01J9/20 , C23C14/0021 , C23C14/081 , C23C14/568 , H01J11/10 , H01J11/40
摘要： Evaporation chamber for depositing a protective film on a surface, where a dielectric layer is formed, of front substrate, front substrate is formed a display electrode and the dielectric layer thereon; transporting unit for transporting front substrate into evaporation chamber; gas introducing units for introducing gas containing H2O into evaporation chamber; and partial pressure detecting unit for measuring a certain partial pressure of gas within evaporation chamber, extending from the center of deposition space of evaporation chamber to the downstream of transport direction of front substrate are provided. Gas containing H2O is introduced from gas introducing units such that the partial pressure of gas is controlled in the partial pressure detecting unit.
摘要翻译： 用于在形成介电层的表面上沉积保护膜的蒸发室，前基板，前基板在其上形成显示电极和电介质层; 将前基板输送到蒸发室中的输送单元; 用于将含有H 2 O的气体引入蒸发室的气体引入单元; 以及分压检测单元，用于测量从蒸发室的沉积空间的中心延伸到前基板输送方向的下游的蒸发室内的气体的一定分压。 从气体导入单元导入含有H 2 O的气体，使得在分压检测单元中控制气体的分压。
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公开(公告)号：US4478524A
公开(公告)日：1984-10-23
申请号：US247037
申请日：1981-03-24
申请人： Mitsuo Saitoh , Yasuo Kamiyama , Mitsuhiro Murata
发明人： Mitsuo Saitoh , Yasuo Kamiyama , Mitsuhiro Murata
CPC分类号： G04C3/008
摘要： An analog-type electronic wristwatch structure comprising a main plate having a central area and first to third areas surrounding the central area. A wheel train mechanism is disposed in the central area, and a time correction mechanism is disposed in the first area. An electronic circuit block is disposed in the second area, and an electromechanical transducer is disposed in the third area. A flat battery is disposed over the wheel train mechanism, the time correction mechanism, the electronic circuit block and the electromechanical transducer.
摘要翻译： 一种模拟电子手表结构，包括具有中心区域的主板和围绕中心区域的第一至第三区域。 在中央区域设置有轮系机构，并且在第一区域设置有时间校正机构。 电子电路块设置在第二区域中，机电换能器设置在第三区域中。 平板电池设置在轮系机构，时间校正机构，电子电路块和机电换能器上。
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公开(公告)号：US07795811B2
公开(公告)日：2010-09-14
申请号：US12013753
申请日：2008-01-14
IPC分类号： H01J17/49
摘要： A PDP having display electrodes formed on a front glass substrate, a dielectric layer, and a protective film is provided, where the protective film is a metal oxide film which includes magnesium oxide, and the product of the film thickness at any arbitrary point in the protective film and the ratio of the maximum luminescence intensity of light emission having a wavelength between 400 nm and 450 nm to the maximum luminescence intensity of light emission having a wavelength between 330 nm and 370 nm as measured in accordance with the cathode luminescence method at the arbitrary point has variation within a range of ±15% as the distribution within the surface of the protective film.
摘要翻译： 提供了一种PDP，其具有形成在前玻璃基板，电介质层和保护膜上的显示电极，其中保护膜是包括氧化镁的金属氧化物膜，其中膜厚度在任意点上的乘积 保护膜和波长在400nm与450nm之间的发光的最大发光强度与330nm和370nm之间的波长的发光的最大发光强度的比率，根据阴极发光方法 任意点在保护膜表面内的分布范围内具有±15％的范围内的变化。
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40.发明授权公开(公告)号：US07723919B2
公开(公告)日：2010-05-25
申请号：US12125673
申请日：2008-05-22
申请人： Mitsuo Saitoh , Masashi Morita , Satoshi Maeshima , Hideki Yamashita , Tsutomu Fujii , Nobuyuki Kamikihara
发明人： Mitsuo Saitoh , Masashi Morita , Satoshi Maeshima , Hideki Yamashita , Tsutomu Fujii , Nobuyuki Kamikihara
IPC分类号： H01J17/49
摘要： The present invention provides a front panel for a plasma display panel which can suppress the incidence of chipping of the barrier rib of a rear panel for a PDP, can enhance the stability of initial electron emission in a dielectric layer, and can reduce a voltage required for maintaining a wall charge. The front panel for a plasma display panel includes a substrate, a plurality of electrodes formed on the substrate, a dielectric layer formed to cover the respective electrodes and the substrate, a dielectric-protection layer formed to cover the dielectric layer, and powder components dispersed on the dielectric-protection layer, wherein an annealed layer having a thickness of 10 to 300 nm is formed on at least the exposed surface of each of the powder components, wherein said exposed surface does not contact the dielectric-protection layer.
摘要翻译： 本发明提供一种用于等离子体显示面板的前面板，其能够抑制PDP背面板的障壁的碎裂的发生，能够提高电介质层中的初始电子发射的稳定性，能够降低所需的电压 用于维护墙壁充电。 用于等离子体显示面板的前面板包括基板，形成在基板上的多个电极，形成为覆盖各个电极和基板的电介质层，形成为覆盖电介质层的电介质保护层和分散的粉末成分 在电介质保护层上，在至少每个粉末成分的暴露表面上形成厚度为10〜300nm的退火层，其中所述暴露表面不接触介电保护层。
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