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    High voltage metal-oxide-semiconductor transistor device
    33.
    发明授权
    High voltage metal-oxide-semiconductor transistor device 有权
    高压金属氧化物半导体晶体管器件

    公开(公告)号：US09196717B2

    公开(公告)日：2015-11-24

    申请号：US13629609

    申请日：2012-09-28

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Ming-Shun Hsu ,  Ke-Feng Lin ,  Chih-Chung Wang

    IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08

    CPC classification number: H01L29/78 ,  H01L29/063 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/7816

    Abstract: A HV MOS transistor device is provided. The HV MOS transistor device includes a substrate comprising at least an insulating region formed thereon, a gate positioned on the substrate and covering a portion of the insulating region, a drain region and a source region formed at respective sides of the gate in the substrate, and a first implant region formed under the insulating region. The substrate comprises a first conductivity type, the drain, the source, and the first implant region comprise a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other.

    Abstract translation: 提供HV MOS晶体管器件。 HV MOS晶体管器件包括至少包括形成在其上的绝缘区域的衬底，位于衬底上并覆盖绝缘区域的一部分的栅极，形成在衬底中的栅极的各个侧面处的漏极区域和源极区域， 以及形成在所述绝缘区域下方的第一注入区域。 衬底包括第一导电类型，漏极，源极和第一注入区域包括第二导电类型，并且第一导电类型和第二导电类型彼此互补。

    HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE
    34.
    发明申请
    HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE 有权
    高电压金属氧化物半导体晶体管器件

    公开(公告)号：US20140339636A1

    公开(公告)日：2014-11-20

    申请号：US13896289

    申请日：2013-05-16

    Applicant: United Microelectronics Corp.

    Inventor： Ming-Shun Hsu ,  Ke-Feng Lin ,  Chiu-Te Lee ,  Chih-Chung Wang

    IPC: H01L29/78

    CPC classification number: H01L29/7816 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/085 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0878

    Abstract: A high voltage metal-oxide-semiconductor (HV MOS) transistor device includes a substrate, a drifting region formed in the substrate, a plurality of isolation structures formed in the drift region and spaced apart from each other by the drift region, a plurality of doped islands respectively formed in the isolation structures, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective two sides of the gate. The gate covers a portion of each isolation structure. The drift region, the source region, and the drain region include a first conductivity type, the doped islands include a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other.

    Abstract translation: 高压金属氧化物半导体（HV MOS）晶体管器件包括衬底，形成在衬底中的漂移区域，形成在漂移区域中并由漂移区域彼此分开的多个隔离结构，多个 分别形成在隔离结构中的掺杂岛，形成在衬底上的栅极，以及在栅极的相应两侧形成在衬底中的源极区和漏极区。 门覆盖每个隔离结构的一部分。 漂移区域，源区域和漏极区域包括第一导电类型，掺杂岛包括第二导电类型，并且第一导电类型和第二导电类型彼此互补。

    SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    35.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体结构及其制造方法

    公开(公告)号：US20140225192A1

    公开(公告)日：2014-08-14

    申请号：US14253365

    申请日：2014-04-15

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chiu-Te Lee ,  Ke-Feng Lin ,  Shu-Wen Lin ,  Kun-Huang Yu ,  Chih-Chung Wang ,  Te-Yuan Wu

    IPC: H01L29/78 ,  H01L29/10 ,  H01L29/66

    CPC classification number: H01L29/7816 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/407

    Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation. The bottom surface of the second portion of the conductive plug is covered by the isolation.

    Abstract translation: 半导体结构包括具有第一导电类型的衬底; 在衬底中形成有第二导电类型的深阱; 具有第一导电类型的第一阱和具有第二导电类型的第二阱都形成在深阱中并且第二阱与第一阱间隔开; 栅电极，形成在所述基板上并且设置在所述第一阱和所述第二阱之间; 从衬底的表面向下延伸并且设置在栅电极和第二阱之间的隔离件; 导电插头，其包括彼此电连接的第一部分和第二部分，并且所述第一部分电连接到所述栅电极，并且所述第二部分穿透所述隔离。 导电插头的第二部分的底表面被隔离层覆盖。

    SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    36.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体结构及其制造方法

    公开(公告)号：US20140131797A1

    公开(公告)日：2014-05-15

    申请号：US13674146

    申请日：2012-11-12

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Wei-Lin Chen ,  Chih-Chien Chang ,  Ke-Feng Lin ,  Chiu-Te Lee ,  Chih-Chung Wang ,  Chiu-Ling Lee

    IPC: H01L29/78 ,  H01L29/66

    CPC classification number: H01L29/7816 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/41766 ,  H01L29/66681

    Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug penetrating into the isolation and reaching the bottom thereof; and a first doping electrode region having the second conductive type, formed within the second well and below the isolation to connect the conductive plug.

    Abstract translation: 半导体结构包括具有第一导电类型的衬底; 具有形成在所述基板中并从所述基板的表面向下延伸的第二导电类型的深阱; 具有第一导电类型的第一阱和具有第二导电类型的第二阱都形成在深阱中并且从衬底的表面向下延伸，并且第二阱与第一阱间隔开; 栅电极，形成在所述基板上并且设置在所述第一阱和所述第二阱之间; 从衬底的表面向下延伸并且设置在栅电极和第二阱之间的隔离件; 导电插塞穿透隔离并到达其底部; 以及具有第二导电类型的第一掺杂电极区域，形成在第二阱内并在隔离件下方以连接导电插塞。

    HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE
    37.
    发明申请
    HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE 有权
    高电压金属氧化物半导体晶体管器件

    公开(公告)号：US20140091389A1

    公开(公告)日：2014-04-03

    申请号：US13629608

    申请日：2012-09-28

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Ming-Shun Hsu ,  Ke-Feng Lin ,  Chiu-Te Lee ,  Chih-Chung Wang

    IPC: H01L29/78

    CPC classification number: H01L29/0878 ,  H01L29/063 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/7816

    Abstract: A high voltage metal-oxide-semiconductor transistor device includes a substrate having an insulating region formed therein, a gate covering a portion of the insulating region and formed on the substrate, a source region and a drain region formed at respective sides of the gate in the substrate, a body region formed in the substrate and partially overlapped by the gate, and a first implant region formed in the substrate underneath the gate and adjacent to the body region. The substrate and body region include a first conductivity type. The source region, the drain region, and the first implant region include a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.

    Abstract translation: 高电压金属氧化物半导体晶体管器件包括其中形成有绝缘区域的衬底，覆盖绝缘区域的一部分并形成在衬底上的栅极，形成在栅极各侧的源极区域和漏极区域 基板，形成在基板中并与栅极部分重叠的主体区域，以及形成在栅极下方并与主体区域相邻的基板中的第一注入区域。 衬底和体区包括第一导电类型。 源极区域，漏极区域和第一注入区域包括第二导电类型。 第一导电类型和第二导电类型彼此互补。

    Transistor structure
    39.
    发明授权
    Transistor structure 有权

    公开(公告)号：US10431655B2

    公开(公告)日：2019-10-01

    申请号：US15924001

    申请日：2018-03-16

    Applicant: United Microelectronics Corp.

    Inventor： Yen-Ming Chen ,  Chiu-Ling Lee ,  Min-Hsuan Tsai ,  Chiu-Te Lee ,  Chih-Chung Wang

    IPC: H01L29/10 ,  H01L29/06 ,  H01L29/78 ,  H01L29/08

    Abstract: A transistor structure including a substrate, a transistor device, a split buried layer, and a second buried layer is provided. The substrate has a device region. The transistor device is located in the device region. The split buried layer is located under the transistor device in the substrate and includes first buried layers separated from each other. The second buried layer is located under the split buried layer in the substrate and connects the first buried layers. The second buried layer and the split buried layer have a first conductive type. The transistor structure may have a higher breakdown voltage.

    SEMICONDUCTOR TRANSISTOR DEVICE
    40.
    发明申请
    SEMICONDUCTOR TRANSISTOR DEVICE 审中-公开

    公开(公告)号：US20190103460A1

    公开(公告)日：2019-04-04

    申请号：US15720204

    申请日：2017-09-29

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chang-Po Hsiung ,  Ping-Hung Chiang ,  Chia-Lin Wang ,  Chia-Wen Lu ,  Nien-Chung Li ,  Wen-Fang Lee ,  Chih-Chung Wang

    IPC: H01L29/06 ,  H01L29/10 ,  H01L29/78

    Abstract: A semiconductor transistor device is provided. The semiconductor transistor device includes a semiconductor substrate, a gate structure, a first isolation structure, a first doped region, and a first extra-contact structure. The gate structure is disposed on the semiconductor substrate, and the semiconductor substrate has a first region and a second region respectively located on two opposite sides of the gate structure. The first isolation structure and the first doped region are disposed in the first region of the semiconductor substrate. The first extra-contact structure is disposed on the semiconductor structure. The first extra-contact structure is located between the gate structure and the first doped region and penetrating into the first isolation structure in the first region of the semiconductor substrate, and the first doped region is electrically coupled to the first extra-contact structure.

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