公开(公告)号：US08124984B2

公开(公告)日：2012-02-28

申请号：US12665556

申请日：2009-05-11

申请人： Masao Uchida ,  Kazuya Utsunomiya ,  Koichi Hashimoto

发明人： Masao Uchida ,  Kazuya Utsunomiya ,  Koichi Hashimoto

IPC分类号： H01L29/04

CPC分类号： H01L29/812 ,  H01L23/544 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is fabricated on an off-cut semiconductor substrate 11. Each unit cell 10 thereof includes: a first semiconductor layer 12 on the surface of the substrate 11; a second semiconductor layer 16 stacked on the first semiconductor layer 12 to have an opening 16e that exposes first and second conductive regions 15 and 14 at least partially; a first conductor 19 located inside the opening 16e of the second semiconductor layer 16 and having a conductive surface 19s that contacts with the first and second conductive regions 15 and 14; and a second conductor 17 arranged on the second semiconductor layer 16 and having an opening 18e corresponding to the opening 16s of the second semiconductor layer 16. In a plane that is defined parallel to the surface of the substrate 11 , the absolute value of a difference between the respective lengths of the second semiconductor layer 16 and the second conductor 18 as measured in the off-cut direction is greater than the absolute value of their difference as measured perpendicularly to the off-cut direction.

摘要翻译： 半导体器件制造在截止半导体衬底11上。每个单电池10包括：在衬底11的表面上的第一半导体层12; 堆叠在第一半导体层12上以具有至少部分地暴露第一和第二导电区域15和14的开口16e的第二半导体层16; 第一导体19位于第二半导体层16的开口16e的内部，并且具有与第一和第二导电区域15和14接触的导电表面19s; 以及布置在第二半导体层16上并具有对应于第二半导体层16的开口16s的开口18e的第二导体17.在与衬底11的表面平行定义的平面中，差异的绝对值 在沿切断方向测量的第二半导体层16和第二导体18的各自长度之间的距离大于垂直于偏离方向测量的它们的差的绝对值。

公开(公告)号：US07970320B2

公开(公告)日：2011-06-28

申请号：US12337647

申请日：2008-12-18

申请人： Yukwi Hong ,  Koichi Hashimoto ,  Ryota Matsumoto ,  Shingo Horita ,  Ryo Nakamura

发明人： Yukwi Hong ,  Koichi Hashimoto ,  Ryota Matsumoto ,  Shingo Horita ,  Ryo Nakamura

IPC分类号： G03G15/02

CPC分类号： G03G15/0241 ,  G03G15/0258 ,  G03G2215/027

摘要： An image forming apparatus includes an image bearing member and a charging device configured to charge the image bearing member. The charging device includes a magnetic particle carrier and a magnetic particle regulating member configured to regulate magnetic particles carried by the magnetic particle carrier. The charging device causes the magnetic particles carried by the magnetic particle carrier to contact the image bearing member, and applies a voltage to the magnetic particle carrier to charge the image bearing member. An electrode has a contact area via which the electrode can contact magnetic particles stored in a particle pool defined by the magnetic particle carrier and the magnetic particle regulating member. The contact area is variable according to an amount of the magnetic particles stored in the particle pool. A current detection device detects a value of current flowing from the magnetic particle carrier to the electrode via the magnetic particles.

摘要翻译： 图像形成装置包括图像承载部件和构造成对图像承载部件充电的充电装置。 充电装置包括磁性粒子载体和被配置为调节由磁性粒子载体承载的磁性粒子的磁性粒子调节部件。 充电装置使由磁性粒子载体承载的磁性粒子与图像承载部件接触，向磁性粒子载体施加电压，对图像承载部件进行充电。 电极具有接触区域，电极可以接触存储在由磁性颗粒载体和磁性颗粒调节构件限定的颗粒池中的磁性颗粒。 接触面积根据存储在颗粒池中的磁性颗粒的量而变化。 电流检测装置通过磁性粒子检测从磁性粒子载体流向电极的电流值。

公开(公告)号：US20100295060A1

公开(公告)日：2010-11-25

申请号：US12518483

申请日：2008-10-10

申请人： Chiaki Kudou ,  Osamu Kusumoto ,  Koichi Hashimoto

发明人： Chiaki Kudou ,  Osamu Kusumoto ,  Koichi Hashimoto

IPC分类号： H01L29/808 ,  H01L21/337

CPC分类号： H01L29/0847 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7828

摘要： A semiconductor device 100 includes: a semiconductor substrate 10 of silicon carbide of a first conductivity type; a silicon carbide epitaxial layer 20 of the first conductivity type, which has been grown on the principal surface 10a of the substrate 10; well regions 22 of a second conductivity type, which form parts of the silicon carbide epitaxial layer 20; and source regions 24 of the first conductivity type, which form respective parts of the well regions 22. A channel epitaxial layer 30 of silicon carbide has been grown over the well regions 22 and source regions 24 of the silicon carbide epitaxial layer 20. A portion of the channel epitaxial layer 30 that is located over the well regions 22 functions as a channel region 40. And a dopant of the first conductivity type has been implanted into the other portions 33 and 35 of the channel epitaxial layer 30 except the channel region 40.

摘要翻译： 半导体器件100包括：第一导电类型的碳化硅的半导体衬底10; 已经在衬底10的主表面10a上生长的第一导电类型的碳化硅外延层20; 第二导电类型的阱区22，其形成碳化硅外延层20的一部分; 以及形成阱区22的相应部分的第一导电类型的源极区24.已经在碳化硅外延层20的阱区22和源极区24上生长了碳化硅的沟道外延层30.一部分 位于阱区22上方的沟道外延层30用作沟道区40.第一导电类型的掺杂剂已经被注入到沟道外延层30的除了沟道区40之外的其它部分33和35中 。

公开(公告)号：US20080265260A1

公开(公告)日：2008-10-30

申请号：US11570269

申请日：2005-06-10

申请人： Makoto Kitabatake ,  Osamu Kusumoto ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Koichi Hashimoto

发明人： Makoto Kitabatake ,  Osamu Kusumoto ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Koichi Hashimoto

IPC分类号： H01L29/24

CPC分类号： H01L29/7828 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/365

摘要： A power device having a transistor structure is formed by using a wide band gap semiconductor. A current path 20 of the power device includes: a JFET (junction) region 2, a drift region 3, and a substrate 4, which have ON resistances exhibiting a positive temperature dependence; and a channel region 1, which has an ON resistance exhibiting a negative temperature dependence. A temperature-induced change in the ON resistance of the entire power device is derived by allowing a temperature-induced change ΔRp in the ON resistance in the JFET (junction) region 2, the drift region 3, and the substrate 4, which have ON resistances exhibiting a positive temperature dependence, and a temperature-induced change ΔRn in the ON resistance in the channel region 1, which has an ON resistance exhibiting a negative temperature dependence, to cancel out each other. With respect to an ON resistance of the entire power device at −30° C., a ratio of change in the ON resistance of the entire power device when a temperature of the power device is varied from −30° C. to 100° C. is 50% or less.

摘要翻译： 通过使用宽带隙半导体形成具有晶体管结构的功率器件。 功率器件的电流通路20包括：具有呈现正温度依赖性的导通电阻的JFET（结）区域2，漂移区域3和衬底4; 以及具有呈现负温度依赖性的导通电阻的沟道区域1。 通过使JFET（结）区域2，漂移区域3中的导通电阻中的温度感应变化ΔR

<！ - SIPO - >于高电平，导致整个功率器件的导通电阻的温度引起的变化， 并且具有呈现正温度依赖性的导通电阻的基板4和沟道区域1中的导通电阻中的温度感应变化ΔR ，其具有呈现负温度依赖性的导通电阻 ，取消对方。 关于整个功率器件在-30℃的导通电阻，当功率器件的温度从-30℃变化到100℃时，整个功率器件的导通电阻的变化率 50％以下。

公开(公告)号：US07414278B2

公开(公告)日：2008-08-19

申请号：US11017828

申请日：2004-12-22

申请人： Shinji Sugatani ,  Koichi Hashimoto ,  Yoshihiro Takao

发明人： Shinji Sugatani ,  Koichi Hashimoto ,  Yoshihiro Takao

IPC分类号： H01L27/108

CPC分类号： H01L27/1087 ,  H01L21/76229 ,  H01L27/0629 ,  H01L27/10829 ,  H01L29/66181 ,  H01L29/945

摘要： The semiconductor device comprises a semiconductor substrate 10 with a trench 16a and a trench 16b formed in; a device isolation film 32a buried in the trench 16a and including a liner film including a silicon nitride film 20 and an insulating film 28 of a silicon oxide-based insulating material; a device isolation film 32b buried in the bottom of the trench 16b; and a capacitor formed on a side wall of an upper part of the second trench 16b and including an impurity diffused region 40 as a first electrode, a capacitor dielectric film 43 of a silicon oxide-based insulating film and a second electrode 46.

摘要翻译： 半导体器件包括具有沟槽16a和形成在其中的沟槽16b的半导体衬底10; 掩埋在沟槽16a中的器件隔离膜32a，其包括含有氮化硅膜20和氧化硅类绝缘材料的绝缘膜28的衬垫膜; 掩埋在沟槽16b的底部的器件隔离膜32b; 以及形成在第二沟槽16b的上部的侧壁上并且包括作为第一电极的杂质扩散区域40，氧化硅类绝缘膜的电容器电介质膜43和第二电极46的电容器。

公开(公告)号：US20080050150A1

公开(公告)日：2008-02-28

申请号：US11837829

申请日：2007-08-13

申请人： Shingo Horita ,  Ryo Nakamura ,  Koichi Hashimoto

发明人： Shingo Horita ,  Ryo Nakamura ,  Koichi Hashimoto

IPC分类号： G03G15/02

CPC分类号： G03G15/0241 ,  G03G2215/022

摘要： A charging apparatus for charging a member to be charged by contacting magnetic particles to the member to be charged, includes a magnetic particle carrying member for magnetically carrying the magnetic particles, wherein the magnetic particle carrying member is provided at a longitudinal end portion of the magnetic particle carrying member with an insulative portion for electrically insulating from the magnetic particles carried by the magnetic particle carrying member; and an electroconductive member disposed for contacting the magnetic particles carried on the insulative portion, wherein an absolute value of a potential of the electroconductive member is lower than an absolute value of a voltage applied to the magnetic particle carrying member.

摘要翻译： 一种用于通过将磁性颗粒接触到要充电的构件而将要充电的构件充电的充电装置包括用于磁性携带磁性颗粒的磁性颗粒承载构件，其中磁性颗粒承载构件设置在磁性颗粒的纵向端部 颗粒承载构件，具有用于与由磁性颗粒承载构件承载的磁性颗粒电绝缘的绝缘部分; 以及导电部件，设置成用于接触承载在绝缘部分上的磁性颗粒，其中导电部件的电位的绝对值低于施加到磁性颗粒承载部件的电压的绝对值。

公开(公告)号：US20070158778A1

公开(公告)日：2007-07-12

申请号：US10588960

申请日：2005-08-26

申请人： Makoto Kitabatake ,  Osamu Kusumoto ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Ryoko Miyanaga ,  Koichi Hashimoto

发明人： Makoto Kitabatake ,  Osamu Kusumoto ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Ryoko Miyanaga ,  Koichi Hashimoto

IPC分类号： H01L23/58

CPC分类号： H02M7/538 ,  H01L21/8213 ,  H01L21/8252 ,  H01L24/73 ,  H01L27/0605 ,  H01L27/0727 ,  H01L2224/0603 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H02M7/003 ,  H03K17/063 ,  H03K17/6871 ,  Y02B70/1483 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device according to this invention includes: two level shift switches (28A and 28B) each having first and second electrodes, a control electrode, a signal output electrode, and a first semiconductor region forming a transistor device section (28a,28b) which intervenes between the first electrode and the signal output electrode and is brought into or out of conduction according to a signal inputted to the control electrode and a resistor device section (Ra,Rb) which intervenes between the signal output electrode and the second electrode, the first semiconductor region comprising a wide bandgap semiconductor; and a diode (23) having a cathode-side electrode, an anode-side electrode, and a second semiconductor region comprising a wide bandgap semiconductor.

摘要翻译： 根据本发明的半导体器件包括：具有第一和第二电极的两个电平移位开关（28A和28B），控制电极，信号输出电极和形成晶体管器件部分（28a， 28b），其介于所述第一电极和所述信号输出电极之间，并且根据输入到所述控制电极的信号和介于所述信号输出电极和所述信号输出电极之间的电阻器部分（Ra，Rb）而导通或导通; 第二电极，第一半导体区域包括宽带隙半导体; 以及具有阴极侧电极，阳极侧电极和包括宽带隙半导体的第二半导体区域的二极管（23）。

公开(公告)号：US07231169B2

公开(公告)日：2007-06-12

申请号：US11193394

申请日：2005-08-01

申请人： Koichi Hashimoto

发明人： Koichi Hashimoto

IPC分类号： G03G15/16

CPC分类号： G03G15/169 ,  G03G15/08 ,  G03G2215/0602

摘要： The image forming apparatus includes a photosensitive member, wherein an electrostatic latent image is formed by illuminating light onto the photosensitive member charged; a developing device for adhering first toner to a portion of the electrostatic latent image to which light is illuminated to form a first toner image; a transferring device for transferring the first toner image onto a transferring medium; an adhering device for adhering second toner having polarity opposite to that of the first toner and light permeability to a portion of the electrostatic latent image to which light is not illuminated; and a light illuminating device for illuminating light onto at least the portion to which the second toner is adhered, after the second toner is adhered and before transferring is performed by the transferring device.

摘要翻译： 图像形成装置包括感光构件，其中通过将光照射到被充电的感光构件上而形成静电潜像; 用于将第一调色剂粘附到照明光的静电潜像的一部分以形成第一调色剂图像的显影装置; 用于将第一调色剂图像转印到转印介质上的转印装置; 用于将具有与第一调色剂的极性相反的第二调色剂和透光性粘附到未被照射的静电潜像的一部分的粘合装置; 以及在第二调色剂被粘附之后并且在转印之前通过转印装置执行将光照射到至少第二调色剂附着的部分上的光照明装置。

公开(公告)号：US07151025B2

公开(公告)日：2006-12-19

申请号：US10388447

申请日：2003-03-17

申请人： Kazuo Itabashi ,  Osamu Tsuboi ,  Yuji Yokoyama ,  Kenichi Inoue ,  Koichi Hashimoto ,  Wataru Futo

发明人： Kazuo Itabashi ,  Osamu Tsuboi ,  Yuji Yokoyama ,  Kenichi Inoue ,  Koichi Hashimoto ,  Wataru Futo

IPC分类号： H01O21/8242

CPC分类号： H01L27/10852 ,  H01L21/76897 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/10817 ,  H01L28/91

摘要： A method of manufacturing a semiconductor device on a semiconductor substrate having a first region and a second region. This method beings by forming a transistor in the first region of said semiconductor substrate. This transistor includes a pair of impurity diffusion regions and a gate electrode. Then forming a first insulating film over the first and second regions with this first insulating film covering the transistor in the first region. Thereafter, patterning the first insulating film to selectively remove the first insulating film in the second region. Then forming a second insulating film over the first and second regions. Thereafter, forming at least one contact hole through the second and first insulating film. The contact hole reaches one of the impurity diffusion regions. Finally, forming a conductive layer in the contact hole.

摘要翻译： 一种在具有第一区域和第二区域的半导体衬底上制造半导体器件的方法。 该方法通过在所述半导体衬底的第一区域中形成晶体管来实现。 该晶体管包括一对杂质扩散区和栅电极。 然后在第一和第二区域上形成第一绝缘膜，该第一绝缘膜覆盖第一区域中的晶体管。 此后，图案化第一绝缘膜以选择性地去除第二区域中的第一绝缘膜。 然后在第一和第二区域上形成第二绝缘膜。 此后，通过第二和第一绝缘膜形成至少一个接触孔。 接触孔到达杂质扩散区域中的一个。 最后，在接触孔中形成导电层。

公开(公告)号：US06727198B1

公开(公告)日：2004-04-27

申请号：US09830722

申请日：2001-04-27

申请人： Koichi Hashimoto ,  Hiroyuki Kosokabe

发明人： Koichi Hashimoto ,  Hiroyuki Kosokabe

IPC分类号： C03C3085

CPC分类号： C03C3/093 ,  C03C3/085 ,  C03C3/091 ,  C03C4/082 ,  H01H11/005 ,  H01H36/0006

摘要： An infra-red absorption glass for a reed switch is suitable for encasement of a reed switch using magnetic wire members made of Fe—Ni based alloy (52 alloy). In the infra-red absorption glass, an infra-red transmittance at a wavelength of 1050 nm is not greater than 10% for a thickness of 0.5 mm and the content of Cl in the glass is not greater than 150 ppm. In the glass, a coefficient of thermal expansion in a temperature range between 30 and 380° C. is preferably 85-100×10−7/° C. In addition, the infra-red absorption glass preferably has a composition consisting essentially of, by weight percent, 60-75% of SiO2, 1-10% of Al2O3, 0-10% of B2O3, 3.5-10% of RO (R being one or more selected from Ca, Mg, Ba, Sr, and Zn), 0.5-5% of Li2O, 8-17% of Na2O+K2O, 2-10% of Fe3O4.

摘要翻译： 用于簧片开关的红外吸收玻璃适用于使用由Fe-Ni基合金（52合金）制成的磁线构件来包围簧片开关。 在红外吸收玻璃中，对于厚度为0.5mm，在1050nm波长下的红外透射率不大于10％，并且玻璃中的Cl含量不大于150ppm。 在玻璃中，在30℃和380℃之间的温度范围内的热膨胀系数优选为85-100×10 -7 /℃。此外，红外线吸收玻璃优选具有以下组成： ，60〜75％的SiO 2，1-10％的Al 2 O 3，0〜10％的B 2 O 3，3.5〜10％的RO（R是选自Ca，Mg，Ba，Sr和Zn中的一种以上） ，0.5〜5％的Li 2 O，8〜17％的Na 2 O + K 2 O，2〜10％的Fe 3 O 4。