摘要:
A smart antenna assembly includes a driving monopole element and an array of parasitic monopole elements arranged in an annular array around the driving monopole element, wherein the parasitic monopole elements are of bent or curved configuration, bending or curving towards the driving monopole element. Preferably, each parasitic monopole element has a portion thereof which is parallel or substantially parallel to the driving monopole element. The assembly provides a compact steerable antenna assembly.
摘要:
The present invention discloses a method for providing node information, a method for acquiring node information, a Device Management (DM) server and a terminal device. The method for providing node information includes: receiving a command including a Management Object Identifier (MOI) and node object information (41); and returning node information according to the MOI and the node object information in the command (42). The DM server includes a sending module and a receiving module. The terminal device includes a receiving module and a returning module. The DM server acquires node values of multiple nodes of multiple MO instances through one command, thereby increasing efficiency of the DM server acquiring node information, and saving OTA resources.
摘要:
The floating gate of a flash memory may be formed with a flat lower surface facing a substrate and a curved upper surface facing the control gate. In some embodiments, such a device has improved capacitive coupling to the control gate and reduced capacitive coupling to its neighbors.
摘要:
A data converting method is provided, which includes the following steps. Data of a terminal is acquired. A data model corresponding to the received data is confirmed to be an object data model. The data based on the object data model is converted into data based on a treelike data model. A data converting device, a terminal, and a server are further provided. Thus, the data based on the object data model is converted into the data based on the treelike data model, so that a server of an Open Mobile Alliance (OMA) Device Management (DM) protocol can manage a terminal based on the object data model defined by a Digital Subscriber Line (DSL) forum.
摘要:
A parallel mechanism which has a holding bracket; a movable platform; and three branch joint assemblies of the same structure that are spatially arranged symmetrically about an axis disposed between the holding bracket and the movable platform. Each branch joint assembly has a connecting rod, a linear guide, a driving device and a carriage. The linear guide and the driving device both are secured on the connecting rod. One end of the connecting rod is connected with the movable platform through a hinge having three rotational degrees of freedom. The carriage and the linear guide are connected with each other by a sliding joint, and the carriage is connected with the holding bracket by a hinge having one rotational degree of freedom.
摘要:
The present invention provides a catalyst component for polymerization of olefin CH2═CHR, in which R is hydrogen or C1-C12 alkyl or aryl, comprising magnesium, titanium, a halogen and an electron donor compound (a) which is at least one selected from the group consisting of dibasic ester compounds of the formula (I), and said catalyst component optionally further comprising an electron donor compound (b) selected from the group consisting of aliphatic dicarboxylic esters and aromatic dicarboxylic esters, and/or an electron donor compound (c) selected from the group consisting of 1,3-diether compounds of formula (IV): wherein, R1, R′ and A are as defined in the description, wherein RI-RVIII are as defined in the description, and a catalyst comprising the catalyst component.
摘要翻译:本发明提供了烯烃CH 2 -CHR的聚合催化剂组分,其中R是氢或C 1 -C 12烷基或 芳基,包括镁,钛,卤素和电子给体化合物(a),其是选自由式(I)的二元酯化合物组成的组中的至少一种,所述催化剂组分任选地还包含电子给体化合物 b)选自脂族二羧酸酯和芳族二羧酸酯,和/或选自式(IV)的1,3-二醚化合物的电子给体化合物(c):其中R 1, R 1和A如说明书中所定义,其中R I -R VIII如说明书中所定义,和包含催化剂的催化剂 零件。
摘要:
A variety of applications can include apparatus having a transistor comprising a modified channel region to address sub-surface leakage issues of the transistor. A dielectric region can be structured to extend from a channel structure of the transistor downward into the substrate for the transistor, with the dielectric region disposed between the source of the transistor and the drain of the transistor to reduce leakage current paths between the source and the drain. The dielectric region can be structured with only dielectric material or with crystalline semiconductor material surrounded by dielectric material.
摘要:
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes multiple levels of two-transistor (2T) memory cells vertically arranged above a substrate. Each 2T memory cell includes a charge storage transistor having a gate, a write transistor having a gate, a vertically extending access line, and a single bit line pair. The source or drain region of the write transistor is directly coupled to a charge storage structure of the charge storage transistor. The vertically extending access line is coupled to gates of both the charge storage transistor and the write transistor of 2T memory cells in multiple respective levels of the multiple vertically arranged levels. The vertically extending access line and the single bit line pair are used for both write operations and read operations of each of the 2T memory cells to which they are coupled.