公开(公告)号：US08568606B2

公开(公告)日：2013-10-29

申请号：US12750015

申请日：2010-03-30

申请人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

发明人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

IPC分类号： C03C15/00

CPC分类号： H01J37/02 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

摘要翻译： 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。

公开(公告)号：US20120207189A1

公开(公告)日：2012-08-16

申请号：US13428870

申请日：2012-03-23

申请人： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

发明人： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC分类号： G01K11/00

CPC分类号： G01K11/00 ,  G01K11/125

摘要： A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.

摘要翻译： 温度测量装置包括光源; 第一分离器，其将光束分成测量光束和参考光束; 反射参考光束的参考光束反射器; 光路长度调节器; 第二分离器，其将反射的参考光束分成第一反射参考光束和第二反射参考光束; 测量第一反射参考光束与由目标物体反射的测量光束获得的反射测量光束之间的干涉的第一光电检测器; 第二光电检测器，其测量第二反射参考光束的强度; 和温度计算单元。 温度计算单元通过从第一光电检测器的输出信号减去第二光电检测器的输出信号来计算干扰的位置，并根据所计算的干扰位置计算目标对象的温度。

公开(公告)号：US20110061813A1

公开(公告)日：2011-03-17

申请号：US12883761

申请日：2010-09-16

申请人： Hachishiro Iizuka ,  Yuki Mochizuki ,  Jun Abe

发明人： Hachishiro Iizuka ,  Yuki Mochizuki ,  Jun Abe

IPC分类号： H01L21/465

CPC分类号： H01J37/32834 ,  H01J37/32091

摘要： A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space.

摘要翻译： 一种等离子体处理装置，包括：喷淋头，其通过设置在面对安装台的淋浴头的面对面上的多个气体排出孔向喷射模式的基板供给气体; 多个排气孔设置在淋浴喷头的相对面上; 沿着所述安装台的圆周安装的可垂直移动的环形构件，所述可垂直移动的环形构件被构造成在升高位置形成由所述安装台，所述淋浴喷头和所述环形构件包围的处理空间; 多个气体供给孔，其在所述环状部件的内壁上开口，向所述处理空间供给气体; 以及在所述环状构件的内壁中开口的多个排气孔，以对所述处理空间进行抽真空。

公开(公告)号：US20080236747A1

公开(公告)日：2008-10-02

申请号：US12057940

申请日：2008-03-28

申请人： Tatsuo MATSUDO ,  Chishio KOSHIMIZU ,  Tomohiro SUZUKI ,  Jun Abe

发明人： Tatsuo MATSUDO ,  Chishio KOSHIMIZU ,  Tomohiro SUZUKI ,  Jun Abe

IPC分类号： G01B11/02 ,  G01N25/00 ,  H01J49/26 ,  C23F1/00

CPC分类号： H01J49/16 ,  G01K5/486 ,  G01K11/12

摘要： A gas analyzing apparatus includes a measurement chamber having a mounting member for mounting thereon a substrate on which a sample is adsorbed; a depressurizing mechanism for depressurizing the inside of the measurement chamber; and a heating unit for heating the substrate having the adsorbed sample thereon and mounted on the mounting member. The apparatus further includes: a mass spectrometer inserted in the measurement chamber, for detecting gas molecules escaping from the sample with an increasing temperature; and a temperature measuring unit for measuring a temperature of the substrate having the adsorbed sample thereon by using an interferometer which detects an optical thickness of the substrate.

摘要翻译： 气体分析装置包括测量室，其具有用于安装其上吸附有样品的基板的安装构件; 用于减压测量室内部的减压机构; 以及加热单元，用于将其上具有吸附样品的基板加热并安装在安装构件上。 该装置还包括：插入测量室中的质谱仪，用于检测随着温度升高从样品中逸出的气体分子; 以及温度测量单元，用于通过使用检测基板的光学厚度的干涉仪来测量其上具有吸附样品的基板的温度。

公开(公告)号：USD571705S1

公开(公告)日：2008-06-24

申请号：US29232722

申请日：2005-06-23

申请人： Ken Machida ,  Masaru Fujiwara ,  Jun Abe

设计人： Ken Machida ,  Masaru Fujiwara ,  Jun Abe

公开(公告)号：US06681074B1

公开(公告)日：2004-01-20

申请号：US09670019

申请日：2000-09-26

申请人： Jun Abe ,  Nobuyasu Mantoku ,  Shinji Makikawa ,  Seiki Ejima

发明人： Jun Abe ,  Nobuyasu Mantoku ,  Shinji Makikawa ,  Seiki Ejima

IPC分类号： G02B628

CPC分类号： C03B37/01231 ,  C03B37/01225 ,  C03B37/01228 ,  C03B2203/12 ,  C03B2203/22 ,  G02B6/0283 ,  G02B6/03633 ,  Y02P40/57

摘要： There is disclosed a method for producing a base material for optical fiber having a deformed first clad consisting of at least a core, a first clad and a second clad, comprising a step of deforming a shape of a section of the first clad so that it may have at least one linear part when the first clad is formed around the core, a step of depositing porous glass fine particles as the second clad made of the same material as that of the first clad on a glass rod having the deformed first clad to form a porous glass base material, and a step of forming the second clad having a round section by vitrifying it. There can be provided a method for producing a base material for optical fiber wherein a lot of breakages or cracks on the surface of the base material can be prevented in a step of depositing porous glass fine particles for the second clad on the first clad, and base material for optical fiber having no defects, and an optical fiber having an efficient effect of being excited with excitation light.

摘要翻译： 公开了一种用于制造光纤基材的方法，该基材具有由至少芯部，第一包层和第二包层构成的变形的第一包层，包括使第一包层的部分的形状变形的步骤， 当在芯周围形成第一包层时，可以具有至少一个直线部分;在具有变形的第一包层的玻璃棒上沉积多孔玻璃微粒作为由与第一包层相同的材料制成的第二包层的步骤 形成多孔玻璃基材，以及通过玻璃化形成具有圆形部分的第二包层的步骤。 可以提供一种用于制造光纤基材的方法，其中在在第一包层上沉积用于第二包层的多孔玻璃微粒的步骤中可以防止在基材表面上发生大量断裂或裂纹，以及 没有缺陷的光纤的基材，以及具有被激发光激发的有效效果的光纤。

公开(公告)号：US06564585B2

公开(公告)日：2003-05-20

申请号：US09851126

申请日：2001-05-09

申请人： Jun Abe ,  Seiki Ejima ,  Akira J. Ikushima ,  Takumi Fujiwara

发明人： Jun Abe ,  Seiki Ejima ,  Akira J. Ikushima ,  Takumi Fujiwara

IPC分类号： C03C2100

CPC分类号： C03C23/009 ,  C03B19/1453 ,  C03B2201/21 ,  C03B2201/23 ,  C03B2201/31 ,  C03B2203/26 ,  C03C3/06 ,  C03C23/002 ,  C03C23/007 ,  C03C23/0095 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2201/31 ,  C03C2203/54 ,  G02F1/3555 ,  G02F1/3558

摘要： There is disclosed second-order nonlinear glass material wherein a part having second-order nonlinearity contains Ge, H and OH and has second-order nonlinear optical constant d of 1 pm/V or more, and a method for producing second-order nonlinear glass material comprising treating a porous glass material containing Ge with hydrogen, sintering it and subjecting it to a ultraviolet poling treatment. There can be provided second-order nonlinear glass material having second-order nonlinearity which is a sufficiently high and has a sufficiently long lifetime for a practical purpose, in use of the glass material for optical functional elements or the like.

摘要翻译： 公开了二阶非线性玻璃材料，其中具有二阶非线性的部分包含Ge，H和OH，并且具有1pm / V以上的二次非线性光学常数d，以及二阶非线性玻璃的制造方法 包括用氢处理含有Ge的多孔玻璃材料，烧结并对其进行紫外线处理。 在使用光学功能元件等的玻璃材料时，可以提供具有二次非线性的二阶非线性玻璃材料，该二次非线性度足够高并且在实际应用中具有足够长的使用寿命。

公开(公告)号：US06497992B1

公开(公告)日：2002-12-24

申请号：US09551615

申请日：2000-04-17

申请人： Takashi Yunogami ,  Shunji Sasabe ,  Kazuyuki Suko ,  Jun Abe ,  Takao Kumihashi ,  Fumio Murai

发明人： Takashi Yunogami ,  Shunji Sasabe ,  Kazuyuki Suko ,  Jun Abe ,  Takao Kumihashi ,  Fumio Murai

IPC分类号： G03F726

CPC分类号： H01L21/02071 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32139

摘要： In order that reaction products of low vapor pressure may be prevented from being deposited on the side wall of a predetermined pattern when this pattern is to be formed by dry-etching a Pt film or a PZT film, a resist mask 54 having a rounded outer periphery at its head is used when the Pt film 53 deposited on a semiconductor substrate 50 is to be dry-etched. After this dry-etching, moreover, an overetching of a proper extent is performed to completely remove the side wall deposited film 55 which is left on the side of the pattern. The resist mask 54 is formed by exposing and developing a benzophenone novolak resist and subsequently by heating to set it while irradiating it, if necessary, with ultraviolet rays.

摘要翻译： 为了防止当通过干法蚀刻Pt膜或PZT膜而形成该图案时，可以防止低蒸气压的反应产物沉积在预定图案的侧壁上，具有圆形外部的抗蚀剂掩模54 当要沉积在半导体衬底50上的Pt膜53被干蚀刻时，使用其头部周边。 此外，在该干蚀刻之后，进行适当程度的过蚀刻以完全去除留在图案侧的侧壁沉积膜55。 抗蚀剂掩模54通过曝光和显影二苯甲酚酚醛清漆抗蚀剂而形成，随后通过加热固化，同时照射它，如果需要，用紫外线照射。

公开(公告)号：US20140325787A1

公开(公告)日：2014-11-06

申请号：US14344206

申请日：2012-08-08

申请人： Koji Iwazaki ,  Jun Abe

发明人： Koji Iwazaki ,  Jun Abe

IPC分类号： B60S1/34

CPC分类号： B60S1/34 ,  B60S1/0452 ,  B60S1/245

摘要： A wiper apparatus is provided with: a wiper arm (14) which is swung about a rotation shaft (18); and a wiper motor (13) for generating drive power to be transmitted to the rotation shaft (18), the wiper apparatus is provided with a power transmission mechanism (19) for transmitting the drive power from the rotation shaft (18) to the wiper arm (14), the power transmission mechanism (19) is provided with: a link member (19a) fixed to the rotation shaft (18); and a support shaft (19b) fixed at a position on the link member (19a), which deviates from the rotation shaft (18), and configured to support the wiper arm (14), a coupling section between the support shaft (19b) and the wiper arm (14) is positioned in front of the front end of the front glass (11), and at least one part of the wiper motor (13) is located within the projection region of the front glass (11), thereby suppressing the increase in the number of parts.

摘要翻译： 刮水器装置设置有：围绕旋转轴（18）摆动的刮水器臂（14）; 以及用于产生要传递到旋转轴（18）的驱动力的刮水器马达（13），刮水器装置设置有用于将驱动力从旋转轴（18）传递到刮水器的动力传递机构（19） 臂（14），动力传递机构（19）设置有：固定到旋转轴（18）的连杆构件（19a）; 以及支撑轴（19b），其固定在与所述旋转轴（18）偏离的所述连杆构件（19a）上的位置，并且构造成支撑所述刮水器臂（14），所述支撑轴（19b） 并且所述刮水器臂（14）位于所述前玻璃（11）的前端的前方，所述刮水器马达（13）的至少一部分位于所述前玻璃（11）的突出部内，由此 抑制零件数量的增加。

公开(公告)号：US08852386B2

公开(公告)日：2014-10-07

申请号：US12883761

申请日：2010-09-16

申请人： Hachishiro Iizuka ,  Yuki Mochizuki ,  Jun Abe

发明人： Hachishiro Iizuka ,  Yuki Mochizuki ,  Jun Abe

IPC分类号： H01L21/3065 ,  H01J37/32

CPC分类号： H01J37/32834 ,  H01J37/32091

摘要： A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space.

摘要翻译： 一种等离子体处理装置，包括：喷淋头，其通过设置在面对安装台的淋浴头的面对面上的多个气体排出孔向喷射模式的基板供给气体; 多个排气孔设置在淋浴喷头的相对面上; 沿着所述安装台的圆周安装的可垂直移动的环形构件，并且构造成在升高位置形成由所述安装台，所述淋浴头和所述环形构件包围的处理空间; 多个气体供给孔，其在所述环状部件的内壁上开口，向所述处理空间供给气体; 以及在所述环状构件的内壁中开口的多个排气孔，以对所述处理空间进行抽真空。