公开(公告)号：US20100243607A1

公开(公告)日：2010-09-30

申请号：US12750015

申请日：2010-03-30

申请人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

发明人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： H01J37/02 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

摘要翻译： 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。

公开(公告)号：US08568606B2

公开(公告)日：2013-10-29

申请号：US12750015

申请日：2010-03-30

申请人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

发明人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

IPC分类号： C03C15/00

CPC分类号： H01J37/02 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

摘要翻译： 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。

公开(公告)号：US08821684B2

公开(公告)日：2014-09-02

申请号：US12363070

申请日：2009-01-30

申请人： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： C23F1/00 ,  C23C16/50 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32027 ,  H01J37/32045 ,  H01J37/32091

摘要： A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.

摘要翻译： 衬底等离子体处理装置包括布置在腔室中的衬底保持电极和对电极，向衬底保持电极施加50MHz以上的高频的高频发生装置，应用了DC负脉冲发生装置 以高频重叠的方式设置直流负脉冲电压，以及控制器，根据高频开启或关闭的定时控制高频频率的间歇施加，直流负脉冲电压的间歇施加。

公开(公告)号：US20100072172A1

公开(公告)日：2010-03-25

申请号：US12562137

申请日：2009-09-18

申请人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： H01L21/3065 ,  C23F1/02

CPC分类号： H01L21/67069 ,  H01J37/32009 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32532 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67253 ,  H01L22/14 ,  H01L22/26

摘要： There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

摘要翻译： 提供了一种基板处理装置和基板处理方法，其实现有效地降低电极上的基板的电压变化，以减少进入基板的离子的入射能量的变化。 基板处理装置包括：第一电极，其在第一电极的主表面上保持基板; 面对所述第一电极的第二电极; RF电源，其向所述第一电极施加频率等于或高于40MHz的RF电压; 以及脉冲电压施加单元，通过将所述脉冲电压叠加在所述RF电压上，向所述第一电极施加按照经过的时间降低的脉冲电压。

公开(公告)号：US20090047795A1

公开(公告)日：2009-02-19

申请号：US12192388

申请日：2008-08-15

申请人： Tatsuo MATSUDO ,  Shinji Himori ,  Noriaki Imai ,  Takeshi Ohse ,  Jun Abe ,  Takayuki Katsunuma

发明人： Tatsuo MATSUDO ,  Shinji Himori ,  Noriaki Imai ,  Takeshi Ohse ,  Jun Abe ,  Takayuki Katsunuma

IPC分类号： H01L21/306 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.

摘要翻译： 一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。 所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位 以预定间隔交替重复。

公开(公告)号：US08852387B2

公开(公告)日：2014-10-07

申请号：US13036369

申请日：2011-02-28

申请人： Hachishiro Iizuka ,  Jun Abe ,  Akihiro Yokota ,  Takeshi Ohse

发明人： Hachishiro Iizuka ,  Jun Abe ,  Akihiro Yokota ,  Takeshi Ohse

IPC分类号： H01L21/3065 ,  C23C16/455 ,  C23F1/08 ,  H05H1/24

CPC分类号： C23F1/08 ,  C23C16/455 ,  H01L21/3065 ,  H05H1/24

摘要： There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a multiple number of gas exhaust holes formed through the shower head to be extended from a facing surface of the shower head to an opposite surface to the facing surface; a multiple number of openable and closable trigger holes formed through the shower head to be extended from the facing surface of the shower head to the opposite surface, and configured to allow plasma leakage from the facing surface to the opposite surface; and a partition wall installed in a gas exhaust space provided on the side of the opposite surface of the shower head to divide the gas exhaust space into a multiple number of regions, each region communicating with one or more trigger holes.

摘要翻译： 提供了一种等离子体处理装置，包括：淋浴喷头，安装在处理室内，用于处理基板并面对用于安装基板的安装台; 多个排气孔形成在淋浴喷头上，从喷淋头的相对表面延伸到相对表面; 多个可打开和可闭合的触发孔，其通过淋浴喷头形成，从喷淋头的相对表面延伸到相对表面，并且构造成允许等离子体从面对表面泄漏到相对表面; 以及安装在设置在所述淋浴喷头的相对表面侧的排气空间中的分隔壁，以将所述排气空间分成多个区域，每个区域与一个或多个触发孔连通。

公开(公告)号：US20110214814A1

公开(公告)日：2011-09-08

申请号：US13036369

申请日：2011-02-28

申请人： Hachishiro Iizuka ,  Jun Abe ,  Akihiro Yokota ,  Takeshi Ohse

发明人： Hachishiro Iizuka ,  Jun Abe ,  Akihiro Yokota ,  Takeshi Ohse

IPC分类号： C23F1/08 ,  H05H1/24

CPC分类号： C23F1/08 ,  C23C16/455 ,  H01L21/3065 ,  H05H1/24

摘要： There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a multiple number of gas exhaust holes formed through the shower head to be extended from a facing surface of the shower head to an opposite surface to the facing surface; a multiple number of openable and closable trigger holes formed through the shower head to be extended from the facing surface of the shower head to the opposite surface, and configured to allow plasma leakage from the facing surface to the opposite surface; and a partition wall installed in a gas exhaust space provided on the side of the opposite surface of the shower head to divide the gas exhaust space into a multiple number of regions, each region communicating with one or more trigger holes.

摘要翻译： 提供了一种等离子体处理装置，包括：淋浴喷头，安装在处理室内，用于处理基板并面对用于安装基板的安装台; 多个排气孔形成在淋浴喷头上，从喷淋头的相对表面延伸到相对表面; 多个可打开和可闭合的触发孔，其通过淋浴喷头形成，从喷淋头的相对表面延伸到相对表面，并且构造成允许等离子体从面对表面泄漏到相对表面; 以及安装在设置在所述淋浴喷头的相对表面侧的排气空间中的分隔壁，以将所述排气空间分成多个区域，每个区域与一个或多个触发孔连通。

公开(公告)号：US08286581B2

公开(公告)日：2012-10-16

申请号：US10864538

申请日：2004-06-10

申请人： Toshihiro Hayami ,  Takeshi Ohse ,  Jun-Ichi Takahira ,  Jun-Ichi Shimada

发明人： Toshihiro Hayami ,  Takeshi Ohse ,  Jun-Ichi Takahira ,  Jun-Ichi Shimada

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： In a high-frequency power source, a malfunction is prevented by precisely removing harmonic components or a modulated wave component which develops while producing a plasma, and a proper high frequency power can be impressed on a plasma processing apparatus. The high-frequency power source includes a power monitor constituted of a directional coupler, a mixer, a 100 kHz low-pass filter, a low-frequency detector, and an oscillator. A 100 MHz high-frequency wave including modulated wave components and the like extracted by the directional coupler and 99.9 MHz high-frequency wave oscillated by the oscillator are added by the mixer. An output of the addition is converted by the low-frequency detector into 100 kHz, resulting in detection.

摘要翻译： 在高频电源中，通过精确地除去在产生等离子体时产生的谐波分量或调制波分量来防止故障，并且可以对等离子体处理装置施加适当的高频功率。 高频电源包括由定向耦合器，混频器，100kHz低通滤波器，低频检测器和振荡器构成的功率监视器。 包括由定向耦合器提取的调制波分量等的100MHz高频波和由振荡器振荡的99.9MHz的高频波被混合器加入。 加法的输出由低频检测器转换成100kHz，从而进行检测。