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62 条记录 (耗时 0.034 秒)

    Method for forming light-absorbing layer
    36.
    发明申请
    Method for forming light-absorbing layer 审中-公开
    光吸收层形成方法

    公开(公告)号：US20050006221A1

    公开(公告)日：2005-01-13

    申请号：US10482750

    申请日：2002-06-10

    申请人： Nobuyoshi Takeuchi ,  Tomoyuki Kume ,  Takashi Komaru

    发明人： Nobuyoshi Takeuchi ,  Tomoyuki Kume ,  Takashi Komaru

    IPC分类号： H01L31/032 ,  C23C14/00 ,  C23C14/32

    CPC分类号： C23C14/3464 ,  C23C14/0623 ,  H01L31/0322 ,  Y02E10/541

    摘要： A method of forming a light-absorbing layer of CIGS by first forming a thin-film precursor of Ib-IIIb group metals by sputtering and then treating by heat the precursor in a selenium atmosphere, wherein particles sputtered from an alloy target of Ib group-IIIb group metals and a single metal target of Ib group or IIIb group metal, disposed opposite to each other, are well mixed to form a thin single-layered precursor being free from the occurrence of reaction of metals at a boundary of layers.

    摘要翻译： 首先通过溅射形成Ib-IIIb族金属的薄膜前体，然后在硒气氛中通过加热处理前体，形成CIGS的光吸收层的方法，其中从Ib组合金属的合金靶溅射的颗粒， IIIb族金属和彼此相对设置的Ib族或IIIb族金属的单一金属靶被充分混合以形成在层边界处不发生金属反应的薄单层前体。

    High-pressure mercury lamp
    37.
    发明授权
    High-pressure mercury lamp 有权
    高压汞灯

    公开(公告)号：US06538383B1

    公开(公告)日：2003-03-25

    申请号：US09416463

    申请日：1999-10-12

    申请人： Nobuyoshi Takeuchi

    发明人： Nobuyoshi Takeuchi

    IPC分类号： H01J6134

    CPC分类号： H01J61/20 ,  H01J61/822

    摘要： A high-pressure mercury lamp includes an arc tube, and a pair of electrodes is provided in a discharge space of the arc tube. In the discharge space, mercury and xenon gas are sealed. The amount of mercury per unit volume that is to be sealed in the discharge space is within a range of 0.12 mg/mm3 to 0.35 mg/mm3. A pressure of the xenon gas in the discharge space is within a range of 2.0×105 Pa to 2.0×106 Pa.

    摘要翻译： 高压汞灯包括电弧管，在电弧管的放电空间设置一对电极。 在放电空间中，汞和氙气被密封。 要在放电空间中密封的每单位体积的汞的量在0.12mg / mm 3至0.35mg / mm 3的范围内。 放电空间中的氙气的压力在2.0×10 5 Pa〜2.0×10 6 Pa的范围内。

    HIGH PRESSURE DISCHARGE LAMP, HIGH PRESSURE DISCHARGE LAMP ELECTRODE, METHOD OF PRODUCING THE HIGH PRESSURE DISCHARGE LAMP ELECTRODE, AND ILLUMINATION DEVICE AND IMAGE DISPLAY APPARATUS RESPECTIVELY USING THE HIGH PRESSURE DISCHARGE LAMPS
    38.
    发明授权
    HIGH PRESSURE DISCHARGE LAMP, HIGH PRESSURE DISCHARGE LAMP ELECTRODE, METHOD OF PRODUCING THE HIGH PRESSURE DISCHARGE LAMP ELECTRODE, AND ILLUMINATION DEVICE AND IMAGE DISPLAY APPARATUS RESPECTIVELY USING THE HIGH PRESSURE DISCHARGE LAMPS 有权
    高压放电灯，高压放电灯电极，高压放电灯电极的制造方法，照明装置和图像显示装置，使用高压放电灯

    公开(公告)号：US06492772B1

    公开(公告)日：2002-12-10

    申请号：US09495660

    申请日：2000-02-01

    申请人： Nobuyoshi Takeuchi

    发明人： Nobuyoshi Takeuchi

    IPC分类号： H01J6106

    CPC分类号： H01J61/073 ,  H01J61/025

    摘要： A high pressure discharge lamp has a pair of electrodes in a discharge tube. Each electrode includes a coil and an electrode rod with a tip, the coil being set around the electrode rod near the tip. The tip of the electrode rod and an adjacent portion of the coil are fused together during the initial discharge. To be more specific, the coil covers the electrode rod near the tip, with the tip of the electrode rod being left uncovered and a length of the tip being &Dgr;L that satisfies an inequality 1/50*R3≦&Dgr;L≦1/5*R3 where R3 is an outer diameter of the coil adjacent to the tip. Alternatively, the electrode can be first formed before being set in the discharge tube, by integrally melting the tip of the electrode rod and the adjacent portion of the coil using, for example, a plasma or laser.

    摘要翻译： 高压放电灯在放电管中具有一对电极。 每个电极包括线圈和具有尖端的电极棒，线圈围绕电极杆设置在尖端附近。 电极棒的尖端和线圈的相邻部分在初始放电期间熔合在一起。 更具体地说，线圈覆盖尖端附近的电极棒，电极杆的末端未被覆盖，并且尖端的长度为DELTAL，其满足不等式1/50 * R3 <= DELTAL <= 1/5 * R3，其中R3是与尖端相邻的线圈的外径。 或者，可以在放电管内首先形成电极，通过使用例如等离子体或激光器将电极棒的尖端和线圈的相邻部分整体熔化。

    Method of forming floating gate type non-volatile semiconductor memory device having silicided source and drain regions
    39.
    发明授权
    Method of forming floating gate type non-volatile semiconductor memory device having silicided source and drain regions 失效
    具有硅化源极和漏极区域的浮栅型非易失性半导体存储器件的形成方法

    公开(公告)号：US5766997A

    公开(公告)日：1998-06-16

    申请号：US721938

    申请日：1996-09-27

    申请人： Nobuyoshi Takeuchi

    发明人： Nobuyoshi Takeuchi

    IPC分类号： H01L21/336 ,  H01L29/423 ,  H01L21/8247

    CPC分类号： H01L29/66825 ,  H01L29/42324

    摘要： A field oxide is selectively formed on a silicon substrate. A first gate oxide is formed on the silicon substrate. Formed on the first gate oxide film is a floating gate which is comprised of a stack of a polysilicon film and a silicide layer with different thicknesses at different locations. Oxide spacer are formed on the side portions of the floating gate. A source region and a drain region are formed on the silicon substrate with a channel region disposed therebetween. Silicide layers are respectively formed on the source region and the drain region. The depth of the drain side silicide layer is shallower than the depth of the source side silicide layer. A step is provided on the surface of the floating gate. A control gate is formed on the floating gate via a gate insulator film. This structure provides a floating gate type non-volatile semiconductor memory device having a silicide layer which is optimized in accordance with the characteristics that are respectively needed for the source region and the drain region.

    摘要翻译： 在硅衬底上选择性地形成场氧化物。 在硅衬底上形成第一栅极氧化物。 形成在第一栅极氧化膜上的是浮置栅极，其由不同位置处具有不同厚度的多晶硅膜和硅化物层构成。 氧化物间隔物形成在浮动栅极的侧部上。 源极区域和漏极区域形成在硅衬底上，其间设置有沟道区域。 在源极区和漏极区分别形成硅化物层。 漏侧硅化物层的深度比源侧硅化物层的深度浅。 在浮动门的表面设置一个台阶。 控制栅经栅极绝缘膜形成在浮栅上。 该结构提供了具有硅化物层的浮栅型非易失性半导体存储器件，该硅化物层根据源极区和漏极区分别需要的特性优化。

    Optical device with metal halide discharge lamp having enhanced starting property
    40.
    发明授权
    Optical device with metal halide discharge lamp having enhanced starting property 失效
    具有金属卤化物放电灯的光学器件具有增强的起始性能

    公开(公告)号：US5583396A

    公开(公告)日：1996-12-10

    申请号：US214193

    申请日：1994-03-17

    申请人： Omura Hideaki ,  Masayuki Wakamiya ,  Nobuyoshi Takeuchi ,  Munehiro Tabata

    发明人： Omura Hideaki ,  Masayuki Wakamiya ,  Nobuyoshi Takeuchi ,  Munehiro Tabata

    IPC分类号： H05B41/292 ,  H05B41/38 ,  H05B37/00

    CPC分类号： H05B41/2928 ,  H05B41/38

    摘要： A metal halide lamp is employed, as a light source, in an optical device such as, for example, an illuminator or an image display. The optical device includes a discharge tube filled with mercury, at least one rare gas, and at least one metal halide, and a pair of electrodes spaced from each other and enclosed in the discharge tube. The optical device also includes an electric circuit, electrically connected to the pair of electrodes, for starting the discharge tube by applying thereto a higher voltage than a voltage to be applied at a steady state to thereby cause an arc discharge in the discharge tube. When the lamp is turned off, power supply thereto from the electric circuit is temporarily interrupted, and when the lamp cools after a first time interval has elapsed subsequent to the interruption of the power supply, a starting voltage is applied to the lamp via the pair of electrodes for a second time interval to cause redischarge. Thereafter, the power supply to the lamp is interrupted after the second time interval has elapsed, to thereby turn off the lamp.

    摘要翻译： 在诸如照明器或图像显示器的光学装置中使用金属卤化物灯作为光源。 光学装置包括填充有汞，至少一种稀有气体和至少一种金属卤化物的放电管，以及一对彼此间隔开并封闭在放电管中的电极。 光学装置还包括电连接到一对电极的电路，用于通过施加比在稳定状态下施加的电压更高的电压来启动放电管，从而在放电管中引起电弧放电。 当灯关闭时，从电路向其供电的电源暂时中断，并且当电源中断之后经过第一时间间隔之后，当灯冷却时，起动电压经由该灯施加到灯 的电极引起再次充电。 此后，经过第二时间间隔后，灯的电源中断，从而关闭灯。