公开(公告)号：US08362545B2

公开(公告)日：2013-01-29

申请号：US13064344

申请日：2011-03-21

Applicant: Tea-Kwang Yu ,  Jeong-Uk Han ,  Yong-Tae Kim

Inventor： Tea-Kwang Yu ,  Jeong-Uk Han ,  Yong-Tae Kim

IPC: H01L29/788

CPC classification number: H01L27/11521 ,  H01L27/11519 ,  H01L27/11524

Abstract: The nonvolatile memory device includes a semiconductor substrate, and a device isolation layer defining an active region in the semiconductor substrate. The device isolation layer includes a top surface lower than a top surface of the semiconductor substrate, such that a side-upper surface of the active region is exposed. A sense line crosses both the active region and the device isolation layer, and a word line, spaced apart from the sense line, crosses both the active region and the device isolation layer.

公开(公告)号：US08097913B2

公开(公告)日：2012-01-17

申请号：US11891605

申请日：2007-08-10

Applicant: Weon-Ho Park ,  Jeong-Uk Han ,  Yong-Tae Kim

Inventor： Weon-Ho Park ,  Jeong-Uk Han ,  Yong-Tae Kim

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L29/42324 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203

Abstract: An electrically erasable and programmable read only memory (EEPROM) device and a method of manufacturing the EEPROM device are provided. First and second gate structures having the same structure are formed on a tunnel insulating layer formed on a substrate, such that the first and second gate structures are spaced apart from each other. A common source region is formed at a portion of the substrate located between the first and second gate structures. First and second drain regions are formed at first and second portions of the substrate adjacent to the first and second gate structures, respectively. Thus, the EEPROM device is manufactured including first and second transistors that have the same structure and may alternately serve as a memory transistor and a selection transistor according to an applied signal.

Abstract translation: 提供电可擦除可编程只读存储器（EEPROM）器件和制造EEPROM器件的方法。 在形成在基板上的隧道绝缘层上形成具有相同结构的第一和第二栅极结构，使得第一和第二栅极结构彼此间隔开。 在位于第一和第二栅极结构之间的衬底的一部分处形成公共源区。 第一和第二漏极区分别形成在与第一和第二栅极结构相邻的衬底的第一和第二部分处。 因此，制造EEPROM器件，其包括具有相同结构的第一和第二晶体管，并且可以根据施加的信号交替地用作存储晶体管和选择晶体管。

公开(公告)号：US07936003B2

公开(公告)日：2011-05-03

申请号：US11344560

申请日：2006-01-31

Applicant: Sang-Woo Kang ,  Jeong-Uk Han ,  Yong-Tae Kim ,  Seung-Beom Yoon

Inventor： Sang-Woo Kang ,  Jeong-Uk Han ,  Yong-Tae Kim ,  Seung-Beom Yoon

IPC: H01L29/788

CPC classification number: H01L29/785 ,  H01L27/105 ,  H01L27/115 ,  H01L27/228 ,  H01L27/2436 ,  H01L29/7881 ,  H01L29/792

Abstract: A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.

Abstract translation: 半导体器件包括具有垂直栅电极的晶体管。 在晶体管结构中，半导体图案具有面向横向的第一和第二侧以及纵向方向上的第三和第四侧。 栅极图案被布置成与半导体图案的第一和第二侧相邻。 杂质图案直接接触半导体图案的第三面和第四面。 栅极绝缘图案插入在栅极图案和半导体图案之间。

公开(公告)号：US20110054644A1

公开(公告)日：2011-03-03

申请号：US11547363

申请日：2005-03-31

Applicant: Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

Inventor： Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

IPC: G06F17/00

CPC classification number: H04L41/085 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L41/0813 ,  H04L43/0817 ,  H04L69/14 ,  H04L2012/2849 ,  Y02B70/325 ,  Y02D50/30 ,  Y04S20/228 ,  Y04S40/162 ,  Y04S40/168

Abstract: The present invention discloses a home network system (1) using a living network control protocol. The home network system (1) includes: at least one electric device; (40-49); a network manager (20-23) for controlling and monitoring the electric device (40-49); and a network based on a predetermined protocol, for connecting the electric device (40-49) and the network managers (20-23), wherein the network manager (20-23) stores a HomNet Profile containing information on the electric device (40-49), and updates the HomNet Profile by communicating with the electric device (40-49) through the network, wherein the HomNet Profile comprises at least one of a device information file containing specific intrinsic information on the electric device, a node parameter file containing a node parameter designated for the electric device, a device operation file containing data on an operational state of the electric device and a scenario file for defining supplementary services for the electric device.

Abstract translation: 本发明公开了一种使用生活网络控制协议的家庭网络系统（1）。 家庭网络系统（1）包括：至少一个电子设备; （40-49）; 一个用于控制和监测电气设备的网络管理器（20-23）; 以及基于预定协议的网络，用于连接电气设备（40-49）和网络管理器（20-23），其中所述网络管理器（20-23）存储包含电气设备（40）上的信息的HomNet简档 -49），并且通过通过所述网络与所述电气设备（40-49）通信来更新所述HomNet简档，其中所述HomNet简档包括在所述电子设备上包含特定固有信息的设备信息文件中的至少一个，节点参数文件 包含为电气设备指定的节点参数，包含关于电气设备的操作状态的数据的设备操作文件和用于定义电气设备的辅助服务的脚本文件。

公开(公告)号：US20110017312A1

公开(公告)日：2011-01-27

申请号：US12841743

申请日：2010-07-22

Applicant: Yong-Tae Kim ,  Brandon Kuczenski ,  Philip LeDuc ,  William Messner

Inventor： Yong-Tae Kim ,  Brandon Kuczenski ,  Philip LeDuc ,  William Messner

IPC: F17D1/16 ,  F16K11/20

CPC classification number: G05D16/202 ,  B01L3/50273 ,  G01N35/1095 ,  G05B15/02 ,  G05D16/2066 ,  G05D16/2086 ,  Y10T137/0396 ,  Y10T137/7761 ,  Y10T137/87249

Abstract: A fluid-pressure regulator for regulating the pressure of a fluid. The regulator includes a variable-resistance fluid element and a variable-volume fluid element located downstream of the variable-resistance element. Pressure in the fluid at the outlet of the regulator is controlled by substantially simultaneously changing the resistance of the variable-resistance element and the volume of the variable-volume element. In one example, a decrease in pressure is effected at the outlet by simultaneously increasing the resistance of the variable-resistance element and increasing the volume of the variable-volume element. Some embodiments of the regulator are particularly useful to effect long-term and high-speed pressure changes in high-resistance fluidic channel networks.

Abstract translation: 用于调节流体压力的流体压力调节器。 调节器包括位于可变电阻元件下游的可变电阻流体元件和可变体积流体元件。 通过基本上同时改变可变电阻元件的电阻和可变体积元件的体积来控制调节器出口处的流体中的压力。 在一个示例中，通过同时增加可变电阻元件的电阻并增加可变体积元件的体积，在出口处实现压力的降低。 调节器的一些实施例对于实现高电阻流体通道网络中的长期和高速压力变化特别有用。

公开(公告)号：US07715325B2

公开(公告)日：2010-05-11

申请号：US10558436

申请日：2003-07-07

Applicant: Koon-Seok Lee ,  Feel-Young Koo ,  Yong-Tae Kim ,  Hwan-Jong Choi ,  Seung-Myun Baek ,  Ja-In Koo ,  Seong-Hwan Kang

Inventor： Koon-Seok Lee ,  Feel-Young Koo ,  Yong-Tae Kim ,  Hwan-Jong Choi ,  Seung-Myun Baek ,  Ja-In Koo ,  Seong-Hwan Kang

IPC: H04L12/28

CPC classification number: H04L12/2818 ,  H04L12/2803 ,  H04L12/2825 ,  H04L43/00 ,  H04L43/0817 ,  H04L2012/2849

Abstract: A home network system which can efficiently configure a new home appliance in the home network system. The home network system includes at least one new device newly connected to a master device through a network, for transmitting a plugged-in request message containing an initial address through the network, receiving an address change request message containing a logical address, and changing the initial address to the logical address, and at least one master device connected to the new device through the network, for receiving the plugged-in request message from the new device, setting the logical address for the new device, and transmitting the address change request message containing the logical address to the new device, wherein the initial address comprises at least a product code and a logical address of the new device, and the new device changes the logical address to the logical address set by the master device.

Abstract translation: 家庭网络系统，可以在家庭网络系统中有效地配置新的家用电器。 家庭网络系统包括通过网络新连接到主设备的至少一个新设备，用于通过网络发送包含初始地址的插入请求消息，接收包含逻辑地址的地址改变请求消息，并且改变 到逻辑地址的初始地址，以及通过网络连接到新设备的至少一个主设备，用于从新设备接收插入请求消息，设置新设备的逻辑地址，以及发送地址改变请求 包含所述新设备的逻辑地址的消息，其中所述初始地址至少包括所述新设备的产品代码和逻辑地址，并且所述新设备将所述逻辑地址改变为由所述主设备设置的逻辑地址。

公开(公告)号：US20090199100A1

公开(公告)日：2009-08-06

申请号：US12366300

申请日：2009-02-05

Applicant: Seo-Young HWANG ,  Jae-Yeon Song ,  Gun-Ill Lee ,  Kook-Heui Lee ,  Yong-Tae Kim ,  Jae-Seung Kim

Inventor： Seo-Young HWANG ,  Jae-Yeon Song ,  Gun-Ill Lee ,  Kook-Heui Lee ,  Yong-Tae Kim ,  Jae-Seung Kim

IPC: G06F3/00

CPC classification number: G11B27/32 ,  H04N13/178

Abstract: A computer readable medium having data stored thereon is provided. A structure of the data includes a media data box including two or more media data, and a movie data (‘moov’) box including information on view sequence data in the media data. The ‘moov’ box includes track reference information indicating that a track box for one view sequence references a track box of another view sequence.

Abstract translation: 提供其上存储有数据的计算机可读介质。 数据的结构包括包括两个或多个媒体数据的媒体数据盒，以及包括关于媒体数据中的视图序列数据的信息的电影数据（“moov”）框。 'moov'框包括轨道参考信息，指示用于一个视图序列的轨道框参考另一个视图序列的轨道框。

公开(公告)号：US07397079B2

公开(公告)日：2008-07-08

申请号：US11245527

申请日：2005-10-07

Applicant: Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Jin-Woo Kim

Inventor： Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Jin-Woo Kim

IPC: H01L29/76 ,  H01L29/788 ,  H01L21/8238

CPC classification number: H01L29/7881 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

Abstract: A non-volatile memory device includes a control gate electrode disposed on a substrate with a first insulation layer interposed therebetween and a floating gate disposed in a hole exposing substrate through the control gate electrode and the first insulation layer. A second insulation layer is interposed between the floating gate and the substrate, and between the floating gate and the control gate.

Abstract translation: 非易失性存储器件包括设置在衬底上的控制栅电极，其间插入有第一绝缘层，以及设置在通过控制栅电极和第一绝缘层暴露衬底的孔中的浮置栅极。 第二绝缘层介于浮置栅极和衬底之间，以及浮置栅极和控制栅极之间。

公开(公告)号：US20080128783A1

公开(公告)日：2008-06-05

申请号：US12027771

申请日：2008-02-07

Applicant: Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

Inventor： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

IPC: H01L29/788

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L29/40114 ,  H01L29/66825 ,  H01L29/7881

Abstract: A split-gate non-volatile memory device includes a raised oxide layer on a field oxide region between adjacent split-gate memory cells, the raised oxide layer extending onto first and second floating gates included in the adjacent split-gate memory cells covered by a wordline electrically coupled to respective control gates included in the adjacent split-gate memory cells.

Abstract translation: 分闸非易失性存储器件包括在相邻的分裂栅极存储器单元之间的场氧化物区域上的凸起的氧化物层，所述凸起的氧化物层延伸到包括在相邻的分离栅极存储器单元中的第一和第二浮动栅极上， 字线电耦合到相邻分离门存储器单元中包括的相应控制门。

公开(公告)号：US20080097631A1

公开(公告)日：2008-04-24

申请号：US10571755

申请日：2004-01-20

Applicant: Seung-Myun Baek ,  Koon-Seok Lee ,  Hwan-Jong Choi ,  Yong-Tae Kim ,  Feel-Young Koo ,  Ja-In Koo ,  Seong-Hwan Kang

Inventor： Seung-Myun Baek ,  Koon-Seok Lee ,  Hwan-Jong Choi ,  Yong-Tae Kim ,  Feel-Young Koo ,  Ja-In Koo ,  Seong-Hwan Kang

IPC: G06F17/00

CPC classification number: H04L43/00 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L43/0817 ,  H04L2012/2849

Abstract: The present invention discloses a home network system (1) which can provide an efficient address system for home appliances by using a dynamic address field selectively including at least two different kinds of logical address codes. The home network system (1) includes at least one slave device (40), and a master device (30) connected to the slave devices (40) through a predetermined network (20), the master device (30) and the slave device (40) distinguishing each other by an address field including a dynamic address field selectively having at least two different kinds of logical address codes to distinguish a plurality of slave devices (40) and master devices (30).

Abstract translation: 本发明公开了一种家庭网络系统（1），其可以通过使用选择性地包括至少两种不同类型的逻辑地址码的动态地址字段来为家用电器提供有效的地址系统。 家庭网络系统（1）包括至少一个从设备（40）和通过预定网络（20）连接到从设备（40）的主设备（30），主设备（30）和从设备 （40）通过包括选择性地具有至少两种不同种类的逻辑地址码的动态地址字段的地址字段进行区分，以区分多个从设备（40）和主设备（30）。