Field emission array with carbon nanotubes and method for fabricating the field emission array
    31.
    发明授权
    Field emission array with carbon nanotubes and method for fabricating the field emission array 失效
    具有碳纳米管的场发射阵列和制造场致发射阵列的方法

    公开(公告)号:US06976897B2

    公开(公告)日:2005-12-20

    申请号:US10658526

    申请日:2003-09-10

    Abstract: A field emission array adopting carbon nanotubes as an electron emitter source, wherein the array includes a rear substrate assembly including cathodes formed as stripes over a rear substrate and carbon nanotubes; a front substrate assembly including anodes formed as stripes over a front substrate with phosphors being deposited on the anodes, a plurality of openings separated by a distance corresponding to the distance between the anodes in a nonconductive plate, and gates formed as stripes perpendicular to the stripes of anodes on the nonconductive plate with a plurality of emitter openings corresponding to the plurality of openings. The nonconductive plate is supported and separated from the front substrate using spacers. The rear substrate assembly is combined with the front substrate assembly such that the carbon nanotubes on the cathodes project through the emitter openings.

    Abstract translation: 一种采用碳纳米管作为电子发射源的场致发射阵列,其中阵列包括后衬底组件,其包括在后衬底上形成为条纹的阴极和碳纳米管; 前面基板组件,其包括在正面基板上形成的带状荧光体的阳极,该荧光体沉积在阳极上,多个开口被分隔开与非导电板中的阳极之间的距离相对应的开口,以及形成为垂直于条纹的条纹的栅极 阳极在非导电板上具有对应于多个开口的多个发射器开口。 非导电板使用间隔件从前基板支撑和分离。 后基板组件与前基板组件结合,使得阴极上的碳纳米管突出通过发射器开口。

    Electron multiplier electrode and terahertz radiation source using the same
    35.
    发明授权
    Electron multiplier electrode and terahertz radiation source using the same 有权
    电子倍增器电极和太赫兹辐射源使用相同

    公开(公告)号:US07768181B2

    公开(公告)日:2010-08-03

    申请号:US12007186

    申请日:2008-01-08

    CPC classification number: H01J43/04

    Abstract: Provided are an electron multiplier electrode using a secondary electron extraction electrode and a terahertz radiation source using the electron multiplier electrode. The electron multiplier electrode includes: a cathode; an emitter disposed on the cathode and extracting electron beams; a gate electrode for switching the electron beams, the gate electrode being disposed on the cathode to surround the emitter; and a secondary electron extraction electrode disposed on the gate electrode and including a secondary electron extraction layer extracting secondary electrons due to collision of the electron beams.

    Abstract translation: 提供了使用二次电子提取电极和使用电子倍增器电极的太赫兹辐射源的电子倍增器电极。 电子倍增器电极包括:阴极; 设置在阴极上并提取电子束的发射器; 用于切换电子束的栅电极,栅电极设置在阴极上以围绕发射极; 以及二次电子提取电极,设置在栅电极上,并且包括由于电子束的碰撞而提取二次电子的二次电子提取层。

    Field emission device and its method of manufacture
    36.
    发明授权
    Field emission device and its method of manufacture 有权
    场发射装置及其制造方法

    公开(公告)号:US07755273B2

    公开(公告)日:2010-07-13

    申请号:US11798612

    申请日:2007-05-15

    CPC classification number: H01J29/04 H01J31/127 H01J2201/30469

    Abstract: A field emission device and its method of manufacture includes: a substrate; a plurality of cathode electrodes formed on the substrate and having slot shaped cathode holes to expose the substrate; emitters formed on the substrate exposed through each of the cathode holes and separated from both side surfaces of the cathode holes, the emitters being formed along a lengthwise direction of the cathode holes; an insulating layer formed on the substrate to cover the cathode electrodes and having insulating layer holes communicating with the cathode holes; and a plurality of gate electrodes formed on the insulating layer and having gate holes communicating with the insulating layer holes.

    Abstract translation: 场致发射器件及其制造方法包括:衬底; 多个阴极电极,形成在基板上,并具有用于露出基板的狭槽形阴极孔; 所述发光体形成在所述基板上,通过所述阴极孔露出并从所述阴极孔的两侧面分离,所述发射体沿着所述阴极孔的长度方向形成; 绝缘层,形成在所述基板上以覆盖所述阴极并具有与所述阴极孔连通的绝缘层孔; 以及形成在绝缘层上并具有与绝缘层孔连通的栅极孔的多个栅电极。

    Mask used for LIGA process, method of manufacturing the mask, and method of manufacturing microstructure using LIGA process
    37.
    发明申请
    Mask used for LIGA process, method of manufacturing the mask, and method of manufacturing microstructure using LIGA process 有权
    用于LIGA工艺的掩模,制造掩模的方法以及使用LIGA工艺制造微结构的方法

    公开(公告)号:US20080166640A1

    公开(公告)日:2008-07-10

    申请号:US11896273

    申请日:2007-08-30

    CPC classification number: G03F7/00 G03F1/22 G03F9/7053 G03F9/7076

    Abstract: A mask used for a Lithographie, Galvanofomung, and Abformung (LIGA) process, a method for manufacturing the mask, and a method for manufacturing a microstructure using a LIGA process. The method for manufacturing the microstructure using the LIGA process contemplates forming a substrate for the microstructure, a plurality of photosensitive layers, each photosensitive layer having a plating hole and an aligning pinhole, and an aligning pin capable of being inserted into the aligning pinhole, with the aligning pinholes of the photosensitive layers being formed in corresponding positions, and repeating a process of stacking the photosensitive layer on the substrate for the microstructure and a process of forming a plating layer by plating the plating hole of the stacked photosensitive layer with a metal for a number of times corresponding to the number of the photosensitive layers, and when the photosensitive layers are stacked on the substrate for the structure, the photosensitive layers being aligned with one another by inserting the aligning pin into the aligning pinholes of all the photosensitive layers stacked on the substrate for the microstructure to penetrate all the photosensitive layers.

    Abstract translation: 用于石版印刷,Galvanofomung和Abformung(LIGA)工艺的掩模,用于制造掩模的方法以及使用LIGA工艺制造微结构的方法。 使用LIGA方法制造微结构的方法考虑形成用于微结构的基底,多个感光层,每个感光层具有电镀孔和对准针孔,以及能够插入到对准针孔中的对准销, 感光层的对准针孔形成在相应的位置上,并且重复将用于微结构的基板上的感光层层叠的工艺和通过用金属镀覆层叠的感光层的电镀孔来形成镀层的工艺 对应于感光层的数量的次数,并且当感光层堆叠在用于结构的基板上时,感光层通过将对准销插入到所有感光层的对准针孔中而彼此对准 在基板上用于微结构穿透 将感光层。

Patent Agency Ranking