公开(公告)号：US20080042266A1

公开(公告)日：2008-02-21

申请号：US11576162

申请日：2005-10-07

申请人： Hitoshi Kagaya ,  Yoshiaki Ide ,  Takeshi Yamakami ,  Hiroki Ohno

发明人： Hitoshi Kagaya ,  Yoshiaki Ide ,  Takeshi Yamakami ,  Hiroki Ohno

IPC分类号： G06K19/06 ,  H01L21/00 ,  H01L23/34

CPC分类号： H04B5/02 ,  G06K19/07718 ,  G06K19/07749 ,  G06K19/07771 ,  H01F17/0006 ,  H01F41/041 ,  H01L23/3121 ,  H01L23/48 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/09701 ,  H04B5/0062 ,  H04B5/0081 ,  H01L2924/00

摘要： A non-contact IC label comprising an electrically insulating first substrate; an electrically connected antenna coil and IC chip provided on one surface of said substrate; a magnetic layer provided on said one surface of said substrate so as to cover said antenna coil and said IC chip, a first adhesive layer provided on said magnetic layer, an electrically insulating second substrate provided on said first adhesive layer, a second adhesive layer provided on said second substrate, a release paper provided on said second adhesive layer, and an overlay material provided on a third adhesive layer on the other surface of said first substrate.

摘要翻译： 一种非接触IC标签，包括电绝缘的第一基板; 设置在所述基板的一个表面上的电连接的天线线圈和IC芯片; 设置在所述基板的所述一个表面上以覆盖所述天线线圈和所述IC芯片的磁性层，设置在所述磁性层上的第一粘合剂层，设置在所述第一粘合剂层上的电绝缘的第二基板， 在所述第二基板上，设置在所述第二粘合剂层上的剥离纸和设置在所述第一基板的另一表面上的第三粘合剂层上的覆盖材料。

公开(公告)号：US20050136956A1

公开(公告)日：2005-06-23

申请号：US10744526

申请日：2003-12-23

申请人： Hiroki Ohno

发明人： Hiroki Ohno

IPC分类号： H04B7/155 ,  H04B15/00

CPC分类号： H04B7/155

摘要： The object of the present invention is to provide a radio relay device for suppressing the deterioration of voice signals which is generated by relaying radio communication between digital radio units. To achieve this object, the radio relay device of the present invention comprises a radio section for transmitting/receiving ADPCM-coded digital radio signals, a demodulation section for demodulating the digital radio signals received by the radio section and acquiring ADPCM codes, a voice quality improvement circuit for removing the clicking noises included in the ADPCM codes which were demodulated by the demodulation section, and a modulation section for modulating the ADPCM codes after the clicking noises are removed by the voice quality improvement circuit, and supplying the modulation signals to the radio section.

摘要翻译： 本发明的目的是提供一种用于抑制通过中继数字无线电单元之间的无线电通信而产生的话音信号的恶化的无线电中继装置。 为了实现该目的，本发明的无线中继装置包括：用于发送/接收ADPCM编码的数字无线电信号的无线电部分，用于解调由无线电部分接收的数字无线电信号并获取ADPCM码的解调部分，语音质量 用于去除由解调部分解调的ADPCM代码中包含的点击噪声的改进电路，以及用于通过语音质量改善电路去除点击噪声之后的ADPCM码的调制部分，并将调制信号提供给无线电 部分。

公开(公告)号：US06800546B2

公开(公告)日：2004-10-05

申请号：US10095025

申请日：2002-03-12

申请人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

发明人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

IPC分类号： H01L214763

CPC分类号： H01L21/76837 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

摘要： The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.

摘要翻译： 本发明包括以下步骤：对形成在基板上的低介电常数绝缘膜的表面进行重整工序，该基板包括多孔低介电常数绝缘膜和无孔低介电常数绝缘膜之一，并形成绝缘层 薄膜作为低介电常数绝缘膜的重整表面上的蚀刻掩模和化学机械抛光终止剂（CMP止动器）中的至少一个。 例如，等离子体作为上述重整工序被照射，低介电绝缘膜的表面粗糙度增加，结果，可以改善膜之间以及层间绝缘膜和其它相邻膜之间的粘附性 具有所谓的“锚效应”。

公开(公告)号：US6118511A

公开(公告)日：2000-09-12

申请号：US294331

申请日：1999-04-20

申请人： Hiroki Ohno ,  Hiroshi Osaki

发明人： Hiroki Ohno ,  Hiroshi Osaki

IPC分类号： G02F1/13 ,  B08B3/12 ,  B08B11/04 ,  G02F1/1333 ,  G02F1/1337

CPC分类号： G02F1/1333 ,  G02F1/133784

摘要： A manufacturing method of a liquid crystal display panel of high display quality is provided, in which any foreign matter or stain on the surface of a substrate can be completely removed and occurrence of irregular orientation or spot is prevented in the cleaning step after rubbing in the manufacturing process of the liquid crystal display panel. A cleaning apparatus for carrying out the manufacturing method is also provided.In the cleaning step after rubbing, as a pre-cleaning treatment, the surface of the glass substrate 1 is sufficiently covered by the mist-like particles 20 sprayed from a binary fluid nozzle 7 to the extent that the water does not move. Then, the glass substrate 1 is subject to a wet cleaning such as supersonic wave cleaning.

摘要翻译： 提供了一种高显示质量的液晶显示面板的制造方法，其中可以完全去除基板表面上的任何异物或污渍，并且在清洗步骤中在摩擦后不会发生不规则取向或斑点 液晶显示面板的制造工艺。 还提供了一种用于执行制造方法的清洁装置。 在摩擦后的清洗步骤中，作为预清洗处理，玻璃基板1的表面被从二元流体喷嘴7喷射的雾状颗粒20充分地覆盖到水不移动的程度。 然后，对玻璃基板1进行超声波清洗等湿式清洗。

公开(公告)号：US5830280A

公开(公告)日：1998-11-03

申请号：US818724

申请日：1997-03-14

申请人： Yoshihide Sato ,  Takayuki Komiya ,  Hiroki Ohno

发明人： Yoshihide Sato ,  Takayuki Komiya ,  Hiroki Ohno

IPC分类号： H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/321 ,  C03C23/00

CPC分类号： H01L21/02074 ,  H01L21/3212

摘要： A polishing treatment called CMP (chemical mechanical polishing) is utilized for filling a contact hole formed in a silicon oxide film with a metallic layer in a manufacturing process of a semiconductor device. After a CMP treatment, a target surface, on which the silicon oxide film and the metallic layer are exposed, is washed with a washing liquid so as to remove residues due to the CMP treatment. The washing liquid comprises a fluorine compound for providing an etchant for the silicon oxide film and the metallic layer, and a protective agent which can be adhered onto a surface of the metallic layer so as to form a protective film. The ratio between the fluorine compound and the protective agent is set such that etching rates of the silicon oxide film and the metallic layer to be effected by the washing liquid fall within ranges of from 0.5 nm/min to 5 nm/min and from 0.5 nm/min to 6 nm/min, respectively, and a ratio between these etching rates falls within a range of from "2:1" to "1:3".

摘要翻译： 在半导体器件的制造工艺中，利用称为CMP（化学机械抛光）的抛光处理来填充形成在具有金属层的氧化硅膜中的接触孔。 在CMP处理之后，用清洗液清洗其上露出氧化硅膜和金属层的目标表面，以便除去由CMP处理引起的残留物。 洗涤液包含用于提供氧化硅膜和金属层的蚀刻剂的氟化合物，以及可以粘附在金属层的表面上以形成保护膜的保护剂。 氟化合物和保护剂之间的比率设定为使得由洗涤液体进行的氧化硅膜和金属层的蚀刻速率在0.5nm / min至5nm / min和0.5nm的范围内 /分钟〜6nm /分钟，这些蚀刻速度之间的比例落入“2:1”至“1:3”的范围内。

公开(公告)号：US5758289A

公开(公告)日：1998-05-26

申请号：US488077

申请日：1995-06-07

申请人： Ronald Lee Lipp ,  Susumi Ohashi ,  Zhao Min ,  Hiroki Ohno ,  Kazuhiko Shimizu ,  Takahiro Kudo ,  Takashi Odagiri

发明人： Ronald Lee Lipp ,  Susumi Ohashi ,  Zhao Min ,  Hiroki Ohno ,  Kazuhiko Shimizu ,  Takahiro Kudo ,  Takashi Odagiri

IPC分类号： H04M1/00 ,  H04M1/654 ,  H04M1/725 ,  H04Q7/38 ,  H04Q7/24

CPC分类号： H04M1/725 ,  H04M1/6545 ,  H04M1/72502

摘要： A relay lifter comprises a hook switch unit for turning ON/OFF a hook switch in response to a talk switch, a voice switching unit for switching connection of an aural signal in said corded telephone set between a transmitter/receiver of said corded telephone set and a cordless telephone set, and a bell sound detection signal transfer unit, a bell sound is outputted from said cordless telephone set when a bell sound is detected and an incoming call is accepted, a hook switch is turned ON/OFF using a hook switch ON/OFF unit, and connection of an aural signal in said corded telephone set is switched to said cordless telephone set for transmitting and receiving voice using said cordless telephone set.

摘要翻译： 一个继电器升降器包括一个用于响应于一个通话开关来打开/关闭一个挂钩开关的挂钩开关单元，一个话音切换单元，用于在所述有线电话机的发送器/接收器之间切换所述有线电话机中的听觉信号的连接， 无绳电话机和铃声检测信号传送单元，当检测到铃声并接受来电时，从所述无绳电话机输出铃声，使用挂钩开关打开/关闭挂钩开关 / OFF单元，并且将所述有线电话机中的听觉信号的连接切换到用于使用所述无绳电话机发送和接收语音的所述无绳电话机。

公开(公告)号：US5650790A

公开(公告)日：1997-07-22

申请号：US566564

申请日：1995-11-28

申请人： Masahisa Fukuchi ,  Hideo Hikuma ,  Hiroki Ohno ,  Makoto Ehara

发明人： Masahisa Fukuchi ,  Hideo Hikuma ,  Hiroki Ohno ,  Makoto Ehara

IPC分类号： H01Q1/22 ,  H01Q1/24 ,  H01Q1/42 ,  H04B7/26

CPC分类号： H01Q1/42 ,  H01Q1/242

摘要： An antenna device for a radio transmission-reception apparatus is disclosed which comprises an antenna element which is to be electrically and mechanically connected to a printed-circuit board fixed in a housing of the radio transmission-reception apparatus, an inverted U-shaped hollow reinforcement spacer, an antenna cover and a retaining portion formed on the housing. The reinforcement spacer has a hole formed in the top portion thereof a diameter of which is substantially equal to that of the antenna element to slide therethrough, a slit formed continuously from the hole to a base end thereof through which said antenna element can be entered in the reinforcement spacer, and a flange formed around the outer circumference of the base end. The antenna cover is constituted to accommodate therein the antenna element with the reinforcement spacer, and has a flange formed around the circumference of a base end thereof. The flanges of the antenna cover and the reinforcement spacer are fixedly supported in the retaining portion provided on the housing in a state that said flanges are stacked upon each other. Since the most of forces caused by vibration and/or impact supplied to the antenna element are absorbed by the reinforcement spacer, a mechanically and electrically connected portion between the antenna element and the printed-circuit board will be effected by the forces and thus damage to the portion will be eliminated.

摘要翻译： 公开了一种用于无线电发射 - 接收装置的天线装置，其包括：电气和机械地连接到固定在无线电发射接收装置的壳体中的印刷电路板的天线元件，倒置的U形中空加强件 间隔件，天线盖和形成在壳体上的保持部分。 加强隔离物在其顶部形成有孔，其直径基本上等于天线元件滑动的直径，该孔从孔到其基端连续地形成，所述天线元件可以通过该狭缝进入其中 加强间隔件，以及围绕基端的外周形成的凸缘。 天线罩被构造成在其中容纳天线元件和加强间隔件，并且具有围绕其基端的圆周形成的凸缘。 天线罩和加强间隔件的凸缘以所述法兰彼此堆叠的状态固定地支撑在设置在壳体上的保持部分中。 由于由提供给天线元件的振动和/或冲击引起的大部分力被加强间隔件吸收，所以天线元件和印刷电路板之间的机械和电连接部分将受到力的影响，从而损坏 该部分将被淘汰。

公开(公告)号：US07837804B2

公开(公告)日：2010-11-23

申请号：US10594549

申请日：2005-04-19

申请人： Hiroki Ohno ,  Kenji Sekiguchi

发明人： Hiroki Ohno ,  Kenji Sekiguchi

IPC分类号： B08B7/04

CPC分类号： H01L21/67051 ,  B08B3/02 ,  G02F2001/1316 ,  H01L21/67028 ,  Y10S134/902

摘要： In a dry process after a cleaning process using a cleaning-liquid nozzle and a rinse process using a side rinse nozzle are performed on a wafer W, the wafer W is turned, feeding of pure water to a center point of the wafer W from a pure-water nozzle is started, and substantially at the same, injection of a nitrogen gas from a gas nozzle to a center portion of the wafer W at a point at an adequate distance apart from the center of the wafer W is started. Next, while the pure-water nozzle is caused to scan toward the periphery of the wafer W, the gas nozzle is caused to scan toward the periphery of the wafer W in an area radially inward of the position of the pure-water nozzle after the gas nozzle passes the center of the wafer W.

摘要翻译： 在使用清洗液喷嘴的清洗处理和使用侧面冲洗喷嘴的冲洗处理之后的干燥处理中，在晶片W上进行晶片W的转动，将纯水从晶片W的中心点向 开始纯水喷嘴，并且基本上同样地，开始从距离晶片W的中心足够距离的点将气体从气体喷嘴喷射到晶片W的中心部分。 接下来，当使纯水喷嘴朝向晶片W的周边扫描时，使气体喷嘴在纯水喷嘴的位置的径向向内的区域中朝向晶片W的周边扫描 气体喷嘴通过晶片W的中心。

公开(公告)号：US20080251101A1

公开(公告)日：2008-10-16

申请号：US10594549

申请日：2005-04-19

申请人： Hiroki Ohno ,  Kenji Sekiguchi

发明人： Hiroki Ohno ,  Kenji Sekiguchi

IPC分类号： B08B5/00 ,  B08B3/04 ,  B08B13/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  G02F2001/1316 ,  H01L21/67028 ,  Y10S134/902

摘要： In a dry process after a cleaning process using a cleaning-liquid nozzle and a rinse process using a side rinse nozzle are performed on a wafer W, the wafer W is turned, feeding of pure water to a center point of the wafer W from a pure-water nozzle is started, and substantially at the same, injection of a nitrogen gas from a gas nozzle to a center portion of the wafer W at a point at an adequate distance apart from the center of the wafer W is started. Next, while the pure-water nozzle is caused to scan toward the periphery of the wafer W, the gas nozzle is caused to scan toward the periphery of the wafer W in an area radially inward of the position of the pure-water nozzle after the gas nozzle passes the center of the wafer W.

摘要翻译： 在使用清洗液喷嘴的清洗处理和使用侧面冲洗喷嘴的冲洗处理之后的干燥处理中，在晶片W上进行晶片W的转动，将纯水从晶片W的中心点向 开始纯水喷嘴，并且基本上同样地，开始从距离晶片W的中心足够距离的点将气体从气体喷嘴喷射到晶片W的中心部分。 接下来，当使纯水喷嘴朝向晶片W的周边扫描时，使气体喷嘴在纯水喷嘴的位置的径向向内的区域中朝向晶片W的周边扫描 气体喷嘴通过晶片W的中心。

公开(公告)号：US20080041420A1

公开(公告)日：2008-02-21

申请号：US11628308

申请日：2005-06-01

申请人： Kenji Sekiguchi ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Hiroki Ohno

IPC分类号： H01L21/304 ,  B08B7/04

CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

摘要： A wafer W is processed by supplying a two-fluid, high pressure jet water, or mega-sonic water onto the wafer W, while rotating the wafer W in an essentially horizontal state. After supply of the cleaning fluid is stopped, the wafer W is dried by rotating the wafer W at a higher speed than that used in supplying the cleaning fluid. No rinsing process using purified water is performed in a period after stopping supply of the cleaning fluid and before rotating the substrate at the higher speed.

摘要翻译： 在基本上水平状态下旋转晶片W的同时，通过向晶片W上供应双流体高压喷射水或大体积的水来处理晶片W. 在停止供给清洗液之后，通过以比供给清洗液所用的速度高的速度旋转晶片W来干燥晶片W. 在停止供给清洗液之后的时间内，在高速旋转基板之前，不进行使用净化水的漂洗处理。