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41 条记录 (耗时 0.028 秒)

    Method of forming structure having surface roughness due to nano-sized surface features
    31.
    发明授权
    Method of forming structure having surface roughness due to nano-sized surface features 失效
    由于纳米尺寸表面特征而形成具有表面粗糙度的结构的方法

    公开(公告)号：US06468916B2

    公开(公告)日：2002-10-22

    申请号：US09754274

    申请日：2001-01-05

    申请人： Jun-hee Choi ,  Seung-nam Cha ,  Hang-woo Lee

    发明人： Jun-hee Choi ,  Seung-nam Cha ,  Hang-woo Lee

    IPC分类号： H01L21302

    CPC分类号： H01J9/025

    摘要： A method of forming a micro structure having nano-sized surface features is provided. The method includes the steps of forming a micro structure having predetermined size and shape on a substrate, coating a carbon polymer layer on the substrate including the micro structure to a predetermined thickness, performing a first etch on the carbon polymer layer by means of plasma etching using a reactive gas in which O2 gas for etching the carbon polymer layer and a gas for etching the micro structure are mixed and forming a mask layer by the residual carbon polymer layer on the surface of the micro structure, and performing a second etch by means of plasma etching using the mixed reactive gas to remove the mask layer and etch the surface of the micro structure not covered by the mask layer so that the micro structure has nano-sized surface features.

    摘要翻译： 提供了一种形成具有纳米尺寸表面特征的微结构的方法。 该方法包括以下步骤：在衬底上形成具有预定尺寸和形状的微结构，将包含微结构的衬底上的碳聚合物层涂覆至预定厚度，通过等离子体蚀刻在碳聚合物层上进行第一次蚀刻 使用其中用于蚀刻碳聚合物层的O 2气体和用于蚀刻微结构的气体的反应性气体混合并通过微结构表面上的残留碳聚合物层形成掩模层，并且通过手段进行第二次蚀刻 使用混合的反应气体进行等离子体蚀刻以去除掩模层并蚀刻未被掩模层覆盖的微结构的表面，使得微结构具有纳米尺寸的表面特征。

    Nanowire electromechanical device and method of fabricating the same
    40.
    发明申请
    Nanowire electromechanical device and method of fabricating the same 失效
    纳米线机电装置及其制造方法

    公开(公告)号：US20070051970A1

    公开(公告)日：2007-03-08

    申请号：US11408054

    申请日：2006-04-21

    申请人： Jae-Eun Jang ,  Seung-nam Cha ,  Yong-Wan Jin ,  Byong-Gwon Song

    发明人： Jae-Eun Jang ,  Seung-nam Cha ,  Yong-Wan Jin ,  Byong-Gwon Song

    IPC分类号： H01L29/74

    CPC分类号： B81C1/00111 ,  B81B3/0086 ,  B81B2201/018 ,  H01H1/0094 ,  Y10S977/762 ,  Y10T29/49105

    摘要： A nanowire electronmechanical device with an improved structure and a method of fabricating the same prevent burning of two nanowires which are switched due to contact with each other while providing stable on-off switching characteristics. The nanowire electromechanical device comprises: an insulating substrate; first and third electrodes spaced apart from each other on the insulating substrate, wherein a negative voltage and a positive voltage, varying within a predetermined range, are applied to the first and third electrodes, respectively; a second electrode interposed between the first and third electrodes, a constant positive voltage, lower than the voltage applied to the third electrode, being applied to the second electrode; a first nanowire vertically grown on the first electrode and charged with a negative charge; a second nanowire vertically grown on the second electrode and charged with a positive charge; and a third nanowire vertically grown on the third electrode and charged with an amount of positive charge corresponding to the magnitude of the varying voltage applied to the third electrode.

    摘要翻译： 具有改进的结构的纳米线电子机械装置及其制造方法防止由于彼此接触而切换的两个纳米线的燃烧，同时提供稳定的开 - 关开关特性。 纳米线机电装置包括：绝缘基板; 第一和第三电极在绝缘基板上彼此间隔开，其中在预定范围内变化的负电压和正电压分别施加到第一和第三电极; 插入在第一和第三电极之间的第二电极，施加到第二电极的恒定的正电压低于施加到第三电极的电压; 在第一电极上垂直生长并带有负电荷的第一纳米线; 在第二电极上垂直生长并带有正电荷的第二纳米线; 以及在第三电极上垂直生长的第三纳米线，并充有与施加到第三电极的变化电压的幅度相对应的一定量的正电荷。