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公开(公告)号：US20140098016A1
公开(公告)日：2014-04-10
申请号：US14124018
申请日：2012-06-25
CPC分类号： H03K3/356104 , G09G3/3648
摘要： A flip-flop circuit (11a) includes: an input transistor (Tr19) having a gate terminal thereof connected to an SB terminal, a source terminal thereof connected to an RB terminal, and a drain terminal thereof connected to a first CMOS circuit and a second CMOS circuit; a power supply (VSS) which is connected to the first CMOS circuit or the second CMOS circuit and, when an SB signal is turned to be active, is connected to the RB terminal; and a regulator circuit (RC). With the arrangement, a compact flip-flop and a compact shift register employing the flip-flop are provided, without causing malfunction of the flip-flop and the shift register.
摘要翻译： 触发器电路（11a）包括：具有连接到SB端子的栅极端子的输入晶体管（Tr19），连接到RB端子的源极端子和连接到第一CMOS电路的漏极端子 第二CMOS电路; 连接到第一CMOS电路或第二CMOS电路的电源（VSS），当SB信号变为有效时，连接到RB端子; 和稳压电路（RC）。 通过这种布置，提供了一种紧凑型触发器和采用触发器的紧凑型移位寄存器，而不会引起触发器和移位寄存器的故障。
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公开(公告)号：US08896511B2
公开(公告)日：2014-11-25
申请号：US13395681
申请日：2010-05-18
申请人： Etsuo Yamamoto , Yasushi Sasaki , Yuhichiroh Murakami , Shige Furuta , Seijirou Gyouten , Shuji Nishi
发明人： Etsuo Yamamoto , Yasushi Sasaki , Yuhichiroh Murakami , Shige Furuta , Seijirou Gyouten , Shuji Nishi
IPC分类号： G09G3/36 , G09G5/00 , G02F1/1362
CPC分类号： G09G3/3648 , G02F1/13624 , G09G3/3614 , G09G2300/0857 , G09G2310/08 , G09G2320/0219 , G09G2330/021
摘要： In an active matrix display apparatus including: pixels provided in a matrix pattern, the pixels each including a memory circuit which retains data while refreshing the data, a data signal electric potential which is supplied from a source line in a period t1 and written to a node which is connected to a liquid capacitor is higher than a data electric potential of the node, the data electric potential being obtained in a period t14 after a refresh operation of the memory circuit.
摘要翻译： 在一种有源矩阵显示装置中，包括以矩阵模式提供的像素，每个像素包括一个在刷新数据的同时保留数据的存储电路，在时间段t1内从源极线提供的数据信号电位被写入到 连接到液体电容器的节点高于节点的数据电位，在存储器电路的刷新操作之后的周期t14中获得数据电位。
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公开(公告)号：US08866720B2
公开(公告)日：2014-10-21
申请号：US13496027
申请日：2010-04-23
IPC分类号： G09G5/36 , G11C11/405 , G09G3/36
CPC分类号： G09G3/3659 , G09G2300/0417 , G09G2300/0823 , G09G2300/0842 , G09G2300/0861 , G09G2300/088 , G09G2330/022 , G11C11/405
摘要： A memory device is provided which includes a memory circuit that allows a circuit which carries out a refresh operation to suitably carry out an original operation of the circuit even if an off-leakage current occurs in a transfer element used in a transfer section. A memory cell includes a switching circuit, a first retaining section, a transfer section, a second retaining section, a first control section, and a voltage supply, and the first control section is controlled to be in (i) a state in which the first control section carries out a first operation in which the first control section is in an active state or a non-active state and (ii) a state in which the first control section carries out a second operation.
摘要翻译： 提供了一种存储器件，其包括一个存储器电路，即使在转印部件中使用的转印元件中出现泄漏电流，允许进行刷新操作的电路适当地执行电路的原始操作。 存储单元包括开关电路，第一保持部分，转移部分，第二保持部分，第一控制部分和电压源，并且第一控制部分被控制为处于（i） 第一控制部分执行第一操作，其中第一控制部分处于活动状态或非活动状态，以及（ii）第一控制部分执行第二操作的状态。
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公开(公告)号：US08675811B2
公开(公告)日：2014-03-18
申请号：US12734595
申请日：2008-08-20
IPC分类号： G11C19/00
CPC分类号： G09G3/3677 , G09G2300/0408 , G09G2300/0426 , G09G2310/0289 , G11C19/28 , H01L27/124 , H03K17/161 , H03K17/162 , H03K17/687
摘要： A circuit which is constituted by a plurality of n-channel transistors includes, in at least one embodiment, a transistor (T1) which has a drain terminal to which an input signal is supplied and a source terminal from which a output signal is supplied; and a transistor (T2) which has a drain terminal to which a control signal is supplied and a source terminal connected to a gate terminal of the transistor (T1). A gate terminal of the transistor (T2) is connected to the source terminal of the transistor (T2). With the arrangement, it is possible to provide (i) a semiconductor device which is constituted by transistors having an identical conductivity type and which is capable of reducing an influence of noise, and (ii) a display device including the semiconductor device.
摘要翻译： 在至少一个实施例中，由多个n沟道晶体管构成的电路包括具有供给输入信号的漏极端子和提供输出信号的源极端子的晶体管（T1）; 以及具有提供控制信号的漏极端子和与晶体管（T1）的栅极端子连接的源极端子的晶体管（T2）。 晶体管（T2）的栅极端子连接到晶体管（T2）的源极端子。 通过该结构，可以提供（i）由具有相同导电类型并能够减小噪声影响的晶体管构成的半导体器件，以及（ii）包括半导体器件的显示器件。
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公开(公告)号：US08269713B2
公开(公告)日：2012-09-18
申请号：US12733117
申请日：2008-05-15
IPC分类号： G09G3/36
CPC分类号： G11C19/184 , G09G3/3677 , G09G3/3688 , G09G2310/0286 , G09G2330/021
摘要： In one embodiment of the present invention, a unit circuit of a shift register includes a bootstrap circuit configured with a transistor T1, a transistor T2 and a capacitor, a transistor T3, a transistor T4, and a reset signal generation circuit. By use of two-phase clock signals and whose high level periods do not overlap with each other, the reset signal generation circuit generates a reset signal which is at a high level in a normal state and changes to a low level when an input signal turns into the high level. During a period that the reset signal is at the high level, transistors T3 and T4 perform discharge of a node and pull-down of an output signal. Thus, it is possible to obtain a power-saving shift register that fixes an output signal at a low level in a normal state without allowing a through current to flow therein.
摘要翻译： 在本发明的一个实施例中，移位寄存器的单元电路包括配置有晶体管T1，晶体管T2和电容器的晶体管T3，晶体管T4和复位信号产生电路的自举电路。 通过使用两相时钟信号并且其高电平周期彼此不重叠，复位信号产生电路产生在正常状态下处于高电平的复位信号，并且当输入信号变为低电平时变为低电平 进入高层。 在复位信号为高电平的期间，晶体管T3，T4进行节点的放电，输出信号的下拉。 因此，可以获得省电移位寄存器，其将正常状态下的输出信号固定在低电平，而不允许通流通过。
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36.发明申请MEMORY DEVICE, DISPLAY DEVICE EQUIPPED WITH MEMORY DEVICE, DRIVE METHOD FOR MEMORY DEVICE, AND DRIVE METHOD FOR DISPLAY DEVICE 审中-公开存储装置，具有存储装置的显示装置，用于存储装置的驱动方法和用于显示装置的驱动方法公开(公告)号：US20120176393A1
公开(公告)日：2012-07-12
申请号：US13395977
申请日：2010-04-23
申请人： Hiroyuki Ohkawa , Yasushi Sasaki , Yuhichiroh Murakami , Shige Furuta , Seijirou Gyouten , Shuji Nishi
发明人： Hiroyuki Ohkawa , Yasushi Sasaki , Yuhichiroh Murakami , Shige Furuta , Seijirou Gyouten , Shuji Nishi
CPC分类号： G09G3/3648 , G09G2300/0852 , G09G2300/0857 , G09G2310/06 , G09G2320/0219
摘要： Provided is a memory device that allows an amount of leakage into a first retaining section to which a binary logic level is written to be balanced between different circuit states. A predetermined period is set in which in a state where a first control section turns off an output element, (i) a first retaining section and a second retaining section retain an identical binary logic level, (ii) an electric potential of a voltage supply is set to one of a first electric potential level and a second electric potential level, (iii) the other one of the first electric potential level and the second electric potential level is supplied from a column driver to a fourth wire, and (iv) subsequently the fourth wire is shifted to a floating state.
摘要翻译： 提供了一种存储器件，其允许向写入二进制逻辑电平的第一保持部分的泄漏量在不同的电路状态之间平衡。 设定规定期间，其中在第一控制部分关闭输出元件的状态下，（i）第一保持部分和第二保持部分保持相同的二进制逻辑电平，（ii）电压源的电位 被设置为第一电位电平和第二电位电平之一，（iii）第一电位电平和第二电位电平中的另一个从列驱动器提供给第四线，以及（iv） 随后第四根线移动到浮动状态。
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公开(公告)号：US20120169751A1
公开(公告)日：2012-07-05
申请号：US13395681
申请日：2010-05-18
申请人： Etsuo Yamamoto , Yasushi Sasaki , Yuhichiroh Murakami , Shige Furuta , Seijirou Gyouten , Shuji Nishi
发明人： Etsuo Yamamoto , Yasushi Sasaki , Yuhichiroh Murakami , Shige Furuta , Seijirou Gyouten , Shuji Nishi
CPC分类号： G09G3/3648 , G02F1/13624 , G09G3/3614 , G09G2300/0857 , G09G2310/08 , G09G2320/0219 , G09G2330/021
摘要： In an active matrix display apparatus including: pixels provided in a matrix pattern, the pixels each including a memory circuit which retains data while refreshing the data, a data signal electric potential which is supplied from a source line in a period t1 and written to a node which is connected to a liquid capacitor is higher than a data electric potential of the node, the data electric potential being obtained in a period t14 after a refresh operation of the memory circuit.
摘要翻译： 在一种有源矩阵显示装置中，包括以矩阵模式提供的像素，每个像素包括一个在刷新数据的同时保留数据的存储电路，在时间段t1内从源极线提供的数据信号电位被写入到 连接到液体电容器的节点高于节点的数据电位，在存储器电路的刷新操作之后的周期t14中获得数据电位。
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公开(公告)号：US20120169750A1
公开(公告)日：2012-07-05
申请号：US13394606
申请日：2010-04-23
IPC分类号： G09G5/39
CPC分类号： G09G3/3659 , G02F1/13624 , G09G2300/0842 , G09G2300/0861 , G09G2330/022
摘要： Provided are a memory-type display device capable of improving image quality during a normal mode and a method for driving such a display device. Each memory circuit (MR1) includes: a node (PIX) (pixel electrode); a node (MRY) (memory electrode); a switch circuit (SW1); a first data-retention section (DS1) composed of a capacitor (Ca1); a data transfer section (TS1) composed of a transistor (N2); a second data-retention section (DS2) composed of a capacitor (Cb1); and a refresh output control section (RS1) including a transistor (N4). During the normal mode, and the capacitor (Ca1) and the capacitor (Cb1) are both used as auxiliary capacitors with the transistor (N2) in a conductive state and the transistor (N4) in a cutoff state.
摘要翻译： 提供了能够在正常模式下提高图像质量的记忆型显示装置以及用于驱动这种显示装置的方法。 每个存储器电路（MR1）包括：节点（PIX）（像素电极）; 节点（MRY）（记忆电极）; 开关电路（SW1）; 由电容器（Ca1）组成的第一数据保持部（DS1）; 由晶体管（N2）构成的数据传送部（TS1）; 由电容器（Cb1）构成的第二数据保持部（DS2）; 以及包括晶体管（N4）的刷新输出控制部分（RS1）。 在正常模式期间，电容器（Ca1）和电容器（Cb1）都用作具有导通状态的晶体管（N2）和晶体管（N4）处于截止状态的辅助电容器。
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公开(公告)号：US20120169690A1
公开(公告)日：2012-07-05
申请号：US13395697
申请日：2010-04-23
CPC分类号： G09G3/3607 , G09G3/3614 , G09G3/3618 , G09G3/3655 , G09G3/3659 , G09G2300/0814 , G09G2300/0823 , G09G2300/0842 , G09G2300/0852 , G09G2300/0861 , G09G2320/0219 , G09G2330/021 , G09G2330/022
摘要： Provided are a display device capable of preventing image noise arising from changes in potential of a common electrode and auxiliary capacitor lines at the time of a switch between a normal mode and a memory mode and a method for driving such a display device. In a case where it is necessary to cause the common electrode and the auxiliary capacitor lines to change in potential along with a switch between the normal mode and the memory mode, the change in potential is made while electrically connecting a node of each memory circuit to a corresponding source line with the corresponding source line having its potential fixed and with the memory circuit having its a switch circuit in a conductive state.
摘要翻译： 提供了能够防止在正常模式和存储模式之间的切换时由公共电极和辅助电容器线的电位变化引起的图像噪声的显示装置以及用于驱动这种显示装置的方法。 在需要使公共电极和辅助电容线与正常模式和存储模式之间的切换一起改变电位的情况下，在将每个存储器电路的节点电连接到 对应的源极线，其相应的源极线具有其电位固定，并且存储电路具有其导通状态的开关电路。
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公开(公告)号：US20100141641A1
公开(公告)日：2010-06-10
申请号：US12733117
申请日：2008-05-15
CPC分类号： G11C19/184 , G09G3/3677 , G09G3/3688 , G09G2310/0286 , G09G2330/021
摘要： In one embodiment of the present invention, a unit circuit of a shift register includes a bootstrap circuit configured with a transistor T1, a transistor T2 and a capacitor, a transistor T3, a transistor T4, and a reset signal generation circuit. By use of two-phase clock signals and whose high level periods do not overlap with each other, the reset signal generation circuit generates a reset signal which is at a high level in a normal state and changes to a low level when an input signal turns into the high level. During a period that the reset signal is at the high level, transistors T3 and T4 perform discharge of a node and pull-down of an output signal. Thus, it is possible to obtain a power-saving shift register that fixes an output signal at a low level in a normal state without allowing a through current to flow therein.
摘要翻译： 在本发明的一个实施例中，移位寄存器的单元电路包括配置有晶体管T1，晶体管T2和电容器的晶体管T3，晶体管T4和复位信号产生电路的自举电路。 通过使用两相时钟信号并且其高电平周期彼此不重叠，复位信号产生电路产生在正常状态下处于高电平的复位信号，并且当输入信号变为低电平时变为低电平 进入高层。 在复位信号为高电平的期间，晶体管T3，T4进行节点的放电，输出信号的下拉。 因此，可以获得省电移位寄存器，其将正常状态下的输出信号固定在低电平，而不允许通流通过。
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