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63 条记录 (耗时 0.027 秒)

    Thin film magnetic head device
    32.
    发明授权
    Thin film magnetic head device 失效
    薄膜磁头装置

    公开(公告)号：US5436780A

    公开(公告)日：1995-07-25

    申请号：US897448

    申请日：1992-06-10

    申请人： Yuji Nagata ,  Toshio Fukazawa ,  Kumiko Wada ,  Yoshihiro Tozaki ,  Satoru Mitani ,  Terumi Yanagi

    发明人： Yuji Nagata ,  Toshio Fukazawa ,  Kumiko Wada ,  Yoshihiro Tozaki ,  Satoru Mitani ,  Terumi Yanagi

    IPC分类号： G11B5/31 ,  G11B5/48 ,  G11B15/12 ,  G11B5/265

    CPC分类号： G11B15/125 ,  G11B5/3103 ,  G11B5/4893

    摘要： A thin film magnetic head device to be equipped on a magnetic recording and reproducing system can meet a plurality of recording formats and carry out stabilized recording/reproducing without depending on the running direction of the magnetic tape. There are combined either of at least two thin film magnetic heads for recording each having on a substrate a recording transducer for recording information on a magnetic tape or two thin film magnetic heads for reproducing each having a reproducing transducer for reading out information recorded on a magnetic tape or two thin magnetic heads for recording and reproducing .in which the recording transducer and the reproducing transducer exist together. According to the running direction of the magnetic tape, only the thin film magnetic head Which is situated at the downstream side in the running direction of the magnetic tape is activated to be always in an operating condition.

    摘要翻译： 配备在磁记录再现系统上的薄膜磁头装置可以满足多种记录格式，并且不依赖于磁带的运行方向进行稳定的记录/再现。 至少两个薄膜磁头中的至少两个用于记录的薄膜磁头中的每一个都具有用于在磁带上记录信息的记录换能器或用于再现每个具有用于读出记录在磁性上的信息的再现换能器的两个薄膜磁头的记录换能器 磁带或两个用于记录和再现的薄磁头，其中记录换能器和再现换能器存在一起。 根据磁带的运行方向，只有位于磁带运行方向下游侧的薄膜磁头被激活才能始终处于工作状态。

    Magneto-resistive head
    33.
    发明授权
    Magneto-resistive head 失效
    磁阻头

    公开(公告)号：US5412524A

    公开(公告)日：1995-05-02

    申请号：US985219

    申请日：1992-12-03

    申请人： Yuji Nagata ,  Satoru Mitani ,  Kazuo Nakamura

    发明人： Yuji Nagata ,  Satoru Mitani ,  Kazuo Nakamura

    IPC分类号： G11B5/39 ,  G11B5/127 ,  G01R33/02

    CPC分类号： G11B5/3903

    摘要： A hard magnetic thin film magnetized in one direction is disposed on or in the vicinity of a magneto-resistive element upon which inclined electrodes are formed. A magnetic field from the hard magnetic film magnetizes the magneto-resistive element stably so that the element has a single magnetic domain. Thus, the magneto-resistive head is remarkably stable with respect to the disturbance magnetic field and inhibits Barkhausen noise from being produced. As a result, the magneto-resistive head reproduces stably and with an improved S/N ratio.

    摘要翻译： 在一个方向上磁化的硬磁性薄膜设置在其上形成倾斜电极的磁阻元件上或附近。 来自硬磁性膜的磁场稳定地磁化磁阻元件，使得元件具有单个磁畴。 因此，磁阻头相对于扰动磁场非常稳定，并且抑制了巴克豪森噪声的产生。 结果，磁阻头稳定地再现并具有改善的S / N比。

    Variable resistance nonvolatile storage device having a source line formed of parallel wiring layers connected to each other through vias
    34.
    发明授权
    Variable resistance nonvolatile storage device having a source line formed of parallel wiring layers connected to each other through vias 有权
    可变电阻非易失性存储装置具有通过通孔彼此连接的平行布线形成的源极线

    公开(公告)号：US08233311B2

    公开(公告)日：2012-07-31

    申请号：US13310894

    申请日：2011-12-05

    申请人： Kazuhiko Shimakawa ,  Yoshihiko Kanzawa ,  Satoru Mitani ,  Shunsaku Muraoka

    发明人： Kazuhiko Shimakawa ,  Yoshihiko Kanzawa ,  Satoru Mitani ,  Shunsaku Muraoka

    IPC分类号： G11C11/00

    CPC分类号： H01L27/101 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1625

    摘要： The variable resistance nonvolatile storage device includes a memory cell (300) that is formed by connecting in series a variable resistance element (309) including a variable resistance layer (309b) which reversibly changes based on electrical signals each having a different polarity and a transistor (317) including a semiconductor substrate (301) and two N-type diffusion layer regions (302a, 302b), wherein the variable resistance layer (309b) includes an oxygen-deficient oxide of a transition metal, lower and upper electrodes (309a, 309c) are made of materials of different elements, a standard electrode potential V1 of the lower electrode (309a), a standard electrode potential V2 of the upper electrode (309c), and a standard electrode potential Vt of the transition metal satisfy Vt

    摘要翻译： 可变电阻非易失性存储装置包括通过串联连接可变电阻元件（309）形成的存储单元（300），该可变电阻元件（309）包括基于各自具有不同极性的电信号可逆地改变的可变电阻层（309b）和晶体管 （307），包括半导体衬底（301）和两个N型扩散层区域（302a，302b），其中可变电阻层（309b）包括过渡金属的氧缺乏氧化物，下电极和上电极（309a， 309c）的材料由下部电极（309a）的标准电极电位V1，上部电极（309c）的标准电极电位V2，过渡金属的标准电极电位Vt满足Vt

    Memory Device and Semiconductor Integrated Circuit
    37.
    发明申请
    Memory Device and Semiconductor Integrated Circuit 有权
    存储器件和半导体集成电路

    公开(公告)号：US20080212359A1

    公开(公告)日：2008-09-04

    申请号：US11883653

    申请日：2006-04-21

    申请人： Shunsaku Muraoka ,  Koichi Osano ,  Satoru Mitani ,  Hiroshi Seki

    发明人： Shunsaku Muraoka ,  Koichi Osano ,  Satoru Mitani ,  Hiroshi Seki

    IPC分类号： G11C11/21

    CPC分类号： H01L27/1021 ,  G11C11/5685 ,  G11C13/0007 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/72 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147

    摘要： First electrode layer includes a plurality of first electrode lines (W1, W2) extending parallel to each other. State-variable layer lying on the first electrode layer includes a plurality of state-variable portions (60-11, 60-12, 60-21, 60-22) which exhibits a diode characteristic and a variable-resistance characteristic. Second electrode layer lying on the state-variable layer includes a plurality of second electrode lines (B1, B2) extending parallel to each other. The plurality of first electrode lines and the plurality of second electrode lines are crossing each other when seen in a layer-stacking direction with the state-variable layer interposed therebetween. State-variable portion (60-11) is provided at an intersection of the first electrode line (W1) and the second electrode line (B1) between the first electrode line and the second electrode line.

    摘要翻译： 第一电极层包括彼此平行延伸的多个第一电极线（W 1，W 2）。 位于第一电极层上的状态变化层包括多个具有二极管特性和可变电阻特性的状态变化部分（60-11,60-12,60-21,60-22）。 位于状态变化层上的第二电极层包括彼此平行延伸的多个第二电极线（B 1，B 2）。 多个第一电极线和多个第二电极线在层叠方向观察时彼此交叉，其间置有状态变化层。 在第一电极线和第二电极线之间的第一电极线（W 1）和第二电极线（B 1）的交叉点处设置状态可变部分（60-11）。

    Magnetoresistive sensor having a bias field applied at approximately 56.degree.
    38.
    发明授权
    Magnetoresistive sensor having a bias field applied at approximately 56.degree. 失效
    磁阻传感器具有施加在大约56°的偏置场

    公开(公告)号：US5663644A

    公开(公告)日：1997-09-02

    申请号：US632403

    申请日：1996-08-05

    申请人： Hiroshi Shimamura ,  Satoru Mitani

    发明人： Hiroshi Shimamura ,  Satoru Mitani

    IPC分类号： G01D5/14 ,  G01D5/16 ,  G01D5/245 ,  G01P3/487 ,  G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  G01R33/02 ,  G01B5/30

    CPC分类号： G01D5/145 ,  G01P3/487 ,  G01R33/09 ,  G11B5/00 ,  G11B5/3903

    摘要： The present invention relates to a magnetic signal detection apparatus utilizing a ferromagnetic thin film magneto-resistive element which produces a maximum output of high linearity with an optimum direction of magnetization of the thin film magneto-resistive element by a small biasing magnetic field. A biasing magnetic field Hb is applied at an angle of approximately 56.degree. to a direction of a current I along a longitudinal direction of a thin film magneto-resistive element (2) on a substrate (1) to make a direction of magnetization M to approximately 45.degree. to attain a highly linear output between power supply terminals (4, 5).

    摘要翻译： PCT No.PCT / JP95 / 01674 Sec。 371日期：1996年8月5日 102（e）日期1996年8月5日PCT提交1995年8月23日PCT公布。 出版物WO96 / 06329 日期：1996年2月29日本发明涉及一种利用铁磁性薄膜磁阻元件的磁信号检测装置，该磁性信号检测装置通过小的偏压产生具有最佳薄膜磁阻元件的磁化方向的高线性度的最大输出 磁场。 偏置磁场Hb沿基板（1）上的薄膜磁阻元件（2）的纵向方向与电流I的方向成大约56°的角度施加，以使磁化方向M成为 约45°，以在电源端子（4,5）之间达到高线性输出。

    Magneto-resistive head including a film of hard magnetic material
    39.
    发明授权
    Magneto-resistive head including a film of hard magnetic material 失效
    磁阻头包括硬磁材料薄膜

    公开(公告)号：US5585985A

    公开(公告)日：1996-12-17

    申请号：US378593

    申请日：1995-01-26

    申请人： Yuji Nagata ,  Satoru Mitani ,  Kazuo Nakamura

    发明人： Yuji Nagata ,  Satoru Mitani ,  Kazuo Nakamura

    IPC分类号： G11B5/39 ,  G11B5/127 ,  G01R33/02

    CPC分类号： G11B5/3903

    摘要： A hard magnetic thin film magnetized in one direction is disposed on or in the vicinity of a magneto-resistive element upon which inclined electrodes are formed. A magnetic field from the hard magnetic film magnetizes the magneto-resistive element stably so that the element has a single magnetic domain. Thus, the magneto-resistive head is remarkably stable with respect to the disturbance magnetic field and inhibits Barkhausen noise from being produced. As a result, the magneto-resistive head reproduces stably and with an improved S/N ratio.

    摘要翻译： 在一个方向上磁化的硬磁性薄膜设置在其上形成倾斜电极的磁阻元件上或附近。 来自硬磁性膜的磁场稳定地磁化磁阻元件，使得元件具有单个磁畴。 因此，磁阻头相对于扰动磁场非常稳定，并且抑制了巴克豪森噪声的产生。 结果，磁阻头稳定地再现并具有改善的S / N比。

    Lamination type magneto-resistive head
    40.
    发明授权
    Lamination type magneto-resistive head 失效
    层压型磁阻头

    公开(公告)号：US5335127A

    公开(公告)日：1994-08-02

    申请号：US902580

    申请日：1992-06-22

    申请人： Yuji Nagata ,  Toshio Fukazawa ,  Satoru Mitani

    发明人： Yuji Nagata ,  Toshio Fukazawa ,  Satoru Mitani

    IPC分类号： G11B5/127 ,  G11B5/39 ,  G11B5/48

    CPC分类号： G11B5/3925 ,  G11B5/3951 ,  G11B5/3977 ,  G11B5/4893

    摘要： A lamination type magneto-resistive head used for a magnetic reproducing apparatus is formed by laminating two magneto-resistive heads, at least with the position of two magneto-resistive elements substantially shifted from each other for lamination and also enabling a plurality of track formats to be conformed, thus making it possible to assure stable outputs at a low frequency range.

    摘要翻译： 用于磁再现装置的层叠型磁阻头通过层叠两个磁阻头而形成，至少两个磁阻元件的位置彼此基本上相互偏移以进行层压，并且还使得多个磁道格式能够 因此可以在低频范围内确保稳定的输出。