公开(公告)号：US20240026565A1

公开(公告)日：2024-01-25

申请号：US18037647

申请日：2021-10-11

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Kosei SUGAWARA ,  Takaki IMAI ,  Masahiro AKIBA ,  Katsuyuki KITAGAWA

IPC分类号： C30B15/26 ,  C30B29/06 ,  C30B30/04 ,  C30B15/14

CPC分类号： C30B15/26 ,  C30B29/06 ,  C30B30/04 ,  C30B15/14

摘要： A method for measuring distance between lower end surface of heat shielding member and surface of raw material melt, the method including providing the member being located above the melt, when a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the melt in a crucible, the method including: forming a through-hole in the member; measuring distance between the member and the melt surface, and observing position of mirror image of the through-hole with fixed point observation apparatus, the mirror image being reflected on the melt surface; then measuring a moving distance of the mirror image, and calculating distance between the member and the melt surface from a measured value and the moving distance of the mirror image, during the pulling of the crystal. The distance between the member and the melt can be precisely measured by the method.

公开(公告)号：US11781242B2

公开(公告)日：2023-10-10

申请号：US16971441

申请日：2019-02-27

申请人： SUMCO CORPORATION

发明人： Hideki Sakamoto ,  Wataru Sugimura ,  Ryusuke Yokoyama ,  Naoki Matsushima

IPC分类号： C30B29/06 ,  C30B15/20 ,  C30B30/04 ,  C30B15/14

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/206 ,  C30B30/04

摘要： A convection pattern control method includes: heating a silicon melt in a quartz crucible using a heating portion; and applying a horizontal magnetic field to the silicon melt in the quartz crucible being rotated. In the heating of the silicon, the silicon melt is heated with the heating portion whose heating capacity differs on both sides across an imaginary line passing through a center axis of the quartz crucible and being in parallel to a central magnetic field line of the horizontal magnetic field when the quartz crucible is viewed from vertically above. In the applying of the horizontal magnetic field, the horizontal magnetic field of 0.2 tesla or more is applied to fix a direction of a convection flow in a single direction in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt.

公开(公告)号：US20190127882A1

公开(公告)日：2019-05-02

申请号：US15797855

申请日：2017-10-30

申请人： United Technologies Corporation

发明人： Joseph V. Mantese ,  Ryan C. Breneman ,  Thomas Anthony Rebbecchi ,  Andrew Boyne ,  John Joseph Marcin ,  Dustin W. Davis ,  David Ulrich Furrer ,  James Tilsley Auxier

IPC分类号： C30B30/04 ,  C30B21/02 ,  F27D11/06 ,  H05B6/06 ,  H05B6/10

CPC分类号： C30B30/04 ,  B22D27/02 ,  B22D27/045 ,  C30B21/02 ,  F27B14/061 ,  F27B14/14 ,  F27D11/06 ,  F27D2099/0015 ,  H05B6/067 ,  H05B6/105

摘要： An induction furnace assembly comprising a chamber having a mold; a primary inductive coil coupled to the chamber; a susceptor surrounding the chamber between the primary inductive coil and the mold; and a shield material contained in a reservoir coupled to or proximate the mold between the susceptor and the mold; the shield material configured to attenuate a portion of an electromagnetic flux generated by the primary induction coil that is not attenuated by the susceptor.

公开(公告)号：US20180244408A1

公开(公告)日：2018-08-30

申请号：US15753793

申请日：2016-08-20

申请人： Christopher Malek ,  Nigel E. Sharp ,  Annemarie Heijna ,  Philip Chow

发明人： Christopher Malek ,  Nigel E. Sharp ,  Annemarie Heijna ,  Philip Chow

IPC分类号： B64G1/64 ,  B64G1/58 ,  G01S19/13 ,  G01S11/02 ,  B66D1/12

CPC分类号： C30B15/02 ,  B64G1/10 ,  B64G1/58 ,  B64G1/648 ,  B64G2001/1092 ,  B66D1/12 ,  C30B15/20 ,  C30B15/32 ,  C30B29/06 ,  C30B30/04 ,  C30B35/005 ,  G01P15/18 ,  G01S11/02 ,  G01S19/13

摘要： A tether for joining objects in space by centripetal force has a modular architecture. The modular architecture facilitates the deployment of the tether by facilitating its transport into space as unassembled modular components and its assembly in situ, after the components have been transported. The modular architecture also facilitates it repair, modification, and disassembly in situ. More particularly, the modular tether has design features that enable its assembly, repair, modification, and/or disassembly in situ while the modular tether remains under tension, i.e., while the modular tether continues to perform its function of joining two or more objects by the application of centripetal force. The modular architecture also enables new tether modalities, e.g., a tensile strength modality, a winch modality, a tension monitoring modality, a repair state modality, a situational awareness modality, and a temperature control modality.

公开(公告)号：US20180237940A1

公开(公告)日：2018-08-23

申请号：US15758023

申请日：2016-08-23

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Kiyotaka TAKANO

IPC分类号： C30B15/30 ,  C30B15/14 ,  C30B30/04 ,  H01F6/04 ,  H01F6/06

CPC分类号： C30B15/305 ,  C30B15/14 ,  C30B29/06 ,  C30B29/42 ,  C30B30/04 ,  H01F6/04 ,  H01F6/06

摘要： A single-crystal pulling apparatus including a pulling furnace containing a crucible containing molten single crystal material, and a magnetic field generation device that is arranged around the furnace, has superconducting coils, and generates a magnetic field distribution. A magnetic flux density distribution on an X axis, which is a direction of magnetic force lines at the central axis in a horizontal plane, is a convex upward distribution, and a magnetic flux density on the X axis becomes 80% or less of a magnetic flux density set value at a crucible wall. Simultaneously, a magnetic flux density distribution on a Y axis, orthogonal to the X axis, is a convex downward distribution, and a magnetic flux density on the Y axis becomes 140% or more of the set value at the crucible wall when the magnetic flux density at the central axis in the horizontal plane is the set value.

公开(公告)号：US09951440B2

公开(公告)日：2018-04-24

申请号：US14893280

申请日：2014-05-22

申请人： SunEdison Semiconductor Limited

发明人： Soubir Basak ,  Carissima Marie Hudson ,  Gaurab Samanta ,  Jae-Woo Ryu ,  Hariprasad Sreedharamurthy ,  Kirk D. McCallum ,  HyungMin Lee

IPC分类号： B32B3/02 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B15/04 ,  C30B30/04 ,  H01L29/165 ,  H01L29/167 ,  H01L29/739

CPC分类号： C30B15/20 ,  C30B15/04 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  H01L29/165 ,  H01L29/167 ,  H01L29/7393

摘要： An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

公开(公告)号：US09938634B2

公开(公告)日：2018-04-10

申请号：US14787368

申请日：2014-05-08

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Masahiro Sakurada ,  Junya Tokue ,  Ryoji Hoshi ,  Izumi Fusegawa

IPC分类号： C30B15/04 ,  C30B29/06 ,  C30B15/30 ,  C30B30/04

CPC分类号： C30B15/04 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04

摘要： A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×1016 atoms/cm3 or more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more.

公开(公告)号：US20160068992A1

公开(公告)日：2016-03-10

申请号：US14787368

申请日：2014-05-08

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Masahiro SAKURADA ,  Junya TOKUE ,  Ryoji HOSHI ,  Izumi FUSEGAWA

IPC分类号： C30B15/04 ,  C30B30/04 ,  C30B29/06

CPC分类号： C30B15/04 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04

摘要： A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×1016 atoms/cm3 or more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more.

摘要翻译： 一种磷掺杂硅单晶的制造方法，其特征在于，包括通过磁场施加切克劳斯基（MCZ）法从掺杂有磷的硅熔融物中提取磷掺杂的硅单晶，其中磷被掺杂，使得磷 磷掺杂硅单晶为2×1016原子/ cm3以上，并且以2000高斯或更高的中心磁场强度将水平磁场施加到硅熔体，使得将产生的磷掺杂硅单晶 氧浓度为1.6×1018原子/ cm3（ASTM'79）以上。 一种重掺杂磷，氧浓度为1.6×1018原子/ cm3（ASTM'79）以上的硅单晶的制造方法。

公开(公告)号：US09255343B2

公开(公告)日：2016-02-09

申请号：US13790560

申请日：2013-03-08

申请人： UT-Battelle, LLC

发明人： Boyd Mccutchen Evans, III ,  Roger A. Kisner ,  Gail Mackiewicz Ludtka ,  Gerard Michael Ludtka ,  Alexander M. Melin ,  Donald M. Nicholson ,  Chad M. Parish ,  Orlando Rios ,  Athena S. Sefat ,  David L. West ,  John B. Wilgen

IPC分类号： C30B11/00 ,  H01F1/01 ,  C22C38/06 ,  C22C38/08 ,  C22C38/10 ,  C30B11/02 ,  C30B29/52 ,  C30B30/04

CPC分类号： C30B11/003 ,  C30B11/02 ,  C30B29/52 ,  C30B30/04 ,  H01F1/015

摘要： A method of making a single crystal comprises heating a material comprising magnetic anisotropy to a temperature T sufficient to form a melt of the material. A magnetic field of at least about 1 Tesla is applied to the melt at the temperature T, where a magnetic free energy difference ΔGm between different crystallographic axes is greater than a thermal energy kT. While applying the magnetic field, the melt is cooled at a rate of about 30° C./min or higher, and the melt solidifies to form a single crystal of the material.

摘要翻译： 制造单晶的方法包括将包含磁各向异性的材料加热到足以形成材料熔体的温度T。 在温度T下将至少约1特斯拉的磁场施加到熔体，其中不同结晶轴之间的自由能差Dgr; Gm大于热能kT。 在施加磁场的同时，将熔体以约30℃/分钟或更高的速率冷却，熔体固化形成材料的单晶。

公开(公告)号：US09127377B2

公开(公告)日：2015-09-08

申请号：US13590413

申请日：2012-08-21

申请人： Wolfgang Walter ,  Cristian Boffo ,  Philipp Revilak

发明人： Wolfgang Walter ,  Cristian Boffo ,  Philipp Revilak

IPC分类号： C30B15/22 ,  C30B30/04 ,  H01F38/00 ,  C30B15/30 ,  H01F6/04 ,  H01F6/06 ,  C30B29/06 ,  C30B29/08 ,  C30B29/42

CPC分类号： C30B30/04 ,  C30B15/305 ,  C30B29/06 ,  C30B29/08 ,  C30B29/42 ,  H01F6/04 ,  H01F6/06 ,  H01F38/00 ,  Y10T117/1068

摘要： A single-crystal pulling device includes vertically tilted magnetic coils between the walls of a cooling vessel. The inside and outside walls of the cooling vessel are coaxially aligned about a central axis. The inside wall of the cooling vessel is coaxially disposed around a cylindrical crucible that holds molten semiconductor material. A mid line passes through the middle point of a first coil, the central axis and the middle point of a second coil. The first coil is wound in a first plane, and the second coil is wound in a second plane. The first plane and the second plane both intersect the central axis at the same point. The first plane intersects the central axis at an angle between 5 and 15 degrees. In one embodiment, the first plane intersects the central axis below the crucible. In another embodiment, the first plane intersects the central axis above the crucible.

摘要翻译： 单晶拉制装置包括在冷却容器的壁之间的垂直倾斜的磁性线圈。 冷却容器的内壁和外壁围绕中心轴线共轴对准。 冷却容器的内壁同时设置在保持熔融半导体材料的圆柱形坩埚周围。 中线穿过第一线圈的中点，第二线圈的中心轴线和中点。 第一线圈被卷绕在第一平面中，并且第二线圈缠绕在第二平面中。 第一平面和第二平面在相同点处都与中心轴相交。 第一平面与中心轴线以5度和15度之间的角度相交。 在一个实施例中，第一平面与坩埚下方的中心轴相交。 在另一个实施例中，第一平面与坩埚上方的中心轴相交。