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    BIDIRECTIONAL SWITCH
    41.
    发明申请
    BIDIRECTIONAL SWITCH 有权
    双向开关

    公开(公告)号：US20160027774A1

    公开(公告)日：2016-01-28

    申请号：US14730826

    申请日：2015-06-04

    Applicant: STMicroelectronics (Tours) SAS

    Inventor： Samuel Menard ,  Dalaf Ali

    IPC: H01L27/08 ,  H01L23/528

    CPC classification number: H01L27/0817 ,  H01L23/528 ,  H01L29/0834 ,  H01L29/747 ,  H01L2924/0002 ,  H01L2924/13033 ,  H01L2924/00

    Abstract: A bidirectional switch formed in a substrate includes first and second main vertical thyristors in antiparallel connection. A third auxiliary vertical thyristor has a rear surface layer in common with the rear surface layer of the first thyristor. A peripheral region surrounds the thyristors and connects the rear surface layer to a layer of the same conductivity type of the third thyristor located on the other side of the substrate. A metallization connects the rear surfaces of the first and second thyristors. An insulating structure is located between the rear surface layer of the third thyristor and the metallization. The insulating structure extends under the periphery of the first thyristor. The insulating structure includes a region made of an insulating material and a complementary region made of a semiconductor material.

    Abstract translation: 形成在衬底中的双向开关包括反并联连接的第一和第二主垂直晶闸管。 第三辅助垂直晶闸管具有与第一晶闸管的后表面层共同的后表面层。 周边区域围绕晶闸管并且将后表面层连接到位于基板另一侧上的与第三晶闸管相同的导电类型的层。 金属化连接第一和第二晶闸管的后表面。 绝缘结构位于第三晶闸管的后表面层与金属化之间。 绝缘结构在第一晶闸管的外围延伸。 绝缘结构包括由绝缘材料制成的区域和由半导体材料制成的互补区域。

    Bi-directional switch with Q1 and Q4 control
    42.
    发明授权
    Bi-directional switch with Q1 and Q4 control 有权
    具有Q1和Q4控制的双向开关

    公开(公告)号：US09231092B2

    公开(公告)日：2016-01-05

    申请号：US13643967

    申请日：2011-04-22

    Applicant: Samuel Menard

    Inventor： Samuel Menard

    IPC: H01L29/747

    CPC classification number: H01L29/747

    Abstract: A vertical bidirectional switch of the type having its control referenced to the rear surface, including on its rear surface a first main electrode and on its front surface a second main electrode and a gate electrode, this switch being controllable by a positive voltage between its gate and its first electrode, wherein the gate electrode is arranged on the front surface of a via crossing the chip in which the switch is formed.

    Abstract translation: 一种垂直双向开关，其控制参照后表面，其后表面上包括第一主电极，在其前表面上包括第二主电极和栅电极，该开关由其栅极之间的正电压控制 及其第一电极，其中，栅电极配置在穿过其中形成有开关的芯片的通孔的前表面上。

    High-voltage vertical power component
    44.
    发明授权
    High-voltage vertical power component 有权
    高压垂直功率元件

    公开(公告)号：US08994065B2

    公开(公告)日：2015-03-31

    申请号：US13901494

    申请日：2013-05-23

    Applicant: STMicroelectronics (Tours) SAS ,  Universite Francois Rabelais

    Inventor： Samuel Menard ,  Gaël Gautier

    IPC: H01L29/747 ,  H01L29/74 ,  H01L29/66 ,  H01L29/06

    CPC classification number: H01L29/74 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/66386 ,  H01L29/747

    Abstract: A vertical power component including: a silicon substrate of a first conductivity type; on the side of a lower surface of the substrate supporting a single electrode, a lower layer of the second conductivity type; and on the side of an upper surface of the substrate supporting a conduction electrode and a gate electrode, an upper region of the second conductivity type, wherein the component periphery includes, on the lower surface side, a porous silicon insulating ring penetrating into the substrate down to a depth greater than that of the lower layer.

    Abstract translation: 一种垂直功率分量，包括：第一导电类型的硅衬底; 在支撑单个电极的基板的下表面侧，具有第二导电类型的下层; 并且在支撑导电电极和栅电极的基板的上表面侧，具有第二导电类型的上部区域，其中，所述元件周边在下表面上包括穿入基板的多孔硅绝缘环 下降到比下层更深的深度。

    Rechargeable in-the-ear hearing aid
    45.
    发明授权
    Rechargeable in-the-ear hearing aid 有权
    可充电的耳内助听器

    公开(公告)号：US08989416B2

    公开(公告)日：2015-03-24

    申请号：US14091824

    申请日：2013-11-27

    Applicant: STMicroelectronics (Tours) SAS

    Inventor： Frédéric Cantin

    IPC: H04R25/00 ,  H01M10/46

    CPC classification number: H04R25/55 ,  H01M10/46 ,  H01M2220/30 ,  H04R2225/023 ,  H04R2225/31

    Abstract: An object containing electronic circuits and a rechargeable cell, wherein the cell is arranged close to a surface of the object, a charge coil being shiftable with respect to the cell between an operating position where it is arranged around the cell and a recharge position where it is axially offset with respect to the cell.

    Abstract translation: 一种包含电子电路和可充电电池的物体，其中所述电池靠近所述物体的表面布置，所述电荷线圈可相对于所述电池在围绕所述电池的布置的操作位置和所述电池的充电位置之间移动， 相对于电池轴向偏移。

    Capacitive power supply with surge current limitation
    46.
    发明授权
    Capacitive power supply with surge current limitation 有权
    具有浪涌电流限制的电容电源

    公开(公告)号：US08988908B2

    公开(公告)日：2015-03-24

    申请号：US13326849

    申请日：2011-12-15

    Applicant: Laurent Gonthier ,  Antoine Passal

    Inventor： Laurent Gonthier ,  Antoine Passal

    IPC: H02H7/127 ,  H02M7/06 ,  H02H9/00 ,  H02M7/12

    CPC classification number: H02M7/062 ,  H02H9/001 ,  H02M7/125

    Abstract: A capacitive power supply including: a first capacitive element and a first resistive element in series between a first terminal of a power switch and at least one rectifying element having a second terminal connected to a first electrode of at least one second capacitive element for providing a D.C. voltage; and a bidirectional switch in parallel on the resistor.

    Abstract translation: 一种电容性电源，包括：电源开关的第一端子与至少一个整流元件串联的第一电容元件和第一电阻元件，所述第一电容元件具有连接到至少一个第二电容元件的第一电极的第二端子，用于提供 直流电压; 和电阻上的并联双向开关。

    Circuit for controlling a switch in series with a capacitive element
    47.
    发明授权
    Circuit for controlling a switch in series with a capacitive element 有权
    用于控制与电容元件串联的开关的电路

    公开(公告)号：US08982594B2

    公开(公告)日：2015-03-17

    申请号：US13332830

    申请日：2011-12-21

    Applicant: Antoine Passal ,  Laurent Gonthier

    Inventor： Antoine Passal ,  Laurent Gonthier

    IPC: H02M7/06 ,  H02M7/155 ,  H02M1/00

    CPC classification number: H02M7/1557 ,  H02M7/06 ,  H02M7/155 ,  H02M2001/0032 ,  Y02B70/16

    Abstract: A circuit for controlling a switch in series with a capacitive element. A circuit may include a bidirectional switch and a diode in parallel with first and second conduction terminals of the switch. The switch may be configured to control a capacitive element adapted to be coupled to an A.C. voltage. The switch includes first and second conduction terminals configured to conduct a same current when the switch is activated.

    Abstract translation: 用于控制与电容元件串联的开关的电路。 电路可以包括双向开关和与开关的第一和第二导电端子并联的二极管。 开关可以被配置为控制适于耦合到交流电压的电容元件。 开关包括被配置为当开关被激活时导通相同电流的第一和第二导电端子。

    Asymmetrical bidirectional protection component
    48.
    发明授权
    Asymmetrical bidirectional protection component 有权
    不对称双向保护组件

    公开(公告)号：US08975661B2

    公开(公告)日：2015-03-10

    申请号：US13210782

    申请日：2011-08-16

    Applicant: Benjamin Morillon

    Inventor： Benjamin Morillon

    IPC: H01L29/66 ,  H01L29/861 ,  H01L29/06 ,  H01L29/32

    CPC classification number: H01L29/66098 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/32 ,  H01L29/861 ,  Y10S438/983

    Abstract: An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first epitaxial layer of the second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second layer having a doping level different from that of the first layer; a second area of the first conductivity type on the outer surface of the epitaxial layer, opposite to the first area; a first metallization covering the entire lower surface of the substrate; and a second metallization covering the second area.

    Abstract translation: 形成在第一导电类型的半导体衬底中的不对称双向保护部件，包括：第一导电类型的第一注入区域; 所述第二导电类型的第一外延层在所述衬底和所述第一注入区上; 所述第二导电类型的第二外延层在所述第一外延层上，所述第二层具有不同于所述第一层的掺杂水平; 所述第一导电类型的第二区域在所述外延层的外表面上与所述第一区域相对; 第一金属化覆盖基板的整个下表面; 以及覆盖所述第二区域的第二金属化。

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