公开(公告)号：US20140038090A1

公开(公告)日：2014-02-06

申请号：US13567900

申请日：2012-08-06

申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

IPC分类号： G03F1/24 ,  G03F7/20

CPC分类号： G03F1/24 ,  G03F1/52

摘要： A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.

摘要翻译： 公开了一种掩模，其制造方法及其使用方法。 在一个示例中，掩模包括沉积在衬底上的衬底和反射多层涂层。 反射多层涂层通过定位基板形成，使得在基板的法线和着陆在基板上的颗粒之间形成角度α，并使基板围绕与颗粒的着陆方向平行的轴线旋转。 在一个实例中，反射多层涂层包括沉积在第一层上的第一层和第二层。 反射多层涂层的相缺陷区域包括在第一位置处的第一层中的第一变形，以及在第二位置处的第二层中的第二变形，第二位置从第一位置横向移位。

公开(公告)号：US08628897B1

公开(公告)日：2014-01-14

申请号：US13542458

申请日：2012-07-05

申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

IPC分类号： G03F1/24 ,  G03F1/22

CPC分类号： G03F1/24

摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

公开(公告)号：US20140011120A1

公开(公告)日：2014-01-09

申请号：US13542458

申请日：2012-07-05

申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

IPC分类号： G03F1/24 ,  G03F7/20

CPC分类号： G03F1/24

摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

公开(公告)号：US20130260288A1

公开(公告)日：2013-10-03

申请号：US13437099

申请日：2012-04-02

申请人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

发明人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

IPC分类号： G03F1/24 ,  G03F7/20

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/48 ,  G03F1/58 ,  G03F7/7015 ,  G03F7/70191

摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and a field. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和一个场。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

公开(公告)号：US20120021589A1

公开(公告)日：2012-01-26

申请号：US13248932

申请日：2011-09-29

申请人： Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Shao-Ming Yu ,  Chang-Yun Chang ,  Jeff J. Xu ,  Clement Hsingjen Wann

发明人： Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Shao-Ming Yu ,  Chang-Yun Chang ,  Jeff J. Xu ,  Clement Hsingjen Wann

IPC分类号： H01L21/311 ,  H01L21/30

CPC分类号： H01L27/0203 ,  G03F1/00 ,  G03F1/36 ,  H01L21/3086 ,  H01L21/823431 ,  H01L29/66795

摘要： Provided is a photolithography apparatus including a photomask. The photomask includes a pattern having a plurality of features, in an example, dummy line features. The pattern includes a first region being in the form of a localized on-grid array and a second region where at least one of the features has an increased width. The apparatus may include a second photomask which may define an active region. The feature with an increased width may be adjacent, and outside, the defined active region.

摘要翻译： 提供了一种包括光掩模的光刻设备。 光掩模包括具有多个特征的图案，在示例中为虚线特征。 该图案包括呈局部网格阵列形式的第一区域和其中至少一个特征具有增加的宽度的第二区域。 该装置可以包括可以限定有源区域的第二光掩模。 具有增加的宽度的特征可以与所定义的有效区域相邻并且在外部。

公开(公告)号：US07989355B2

公开(公告)日：2011-08-02

申请号：US12370152

申请日：2009-02-12

申请人： Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Ming-Ching Chang ,  Jeff J. Xu

发明人： Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Ming-Ching Chang ,  Jeff J. Xu

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3086 ,  H01L21/3088 ,  H01L21/823828 ,  H01L21/823871 ,  Y10S438/947

摘要： The present disclosure provides a method of fabricating a semiconductor device that includes forming a mask layer over a substrate, forming a dummy layer having a first dummy feature and a second dummy feature over the mask layer, forming first and second spacer roofs to cover a top portion of the first and second dummy features, respectively, and forming first and second spacer sleeves to encircle side portions of the first and second dummy features, respectively, removing the first spacer roof and the first dummy feature while protecting the second dummy feature, removing a first end portion and a second end portion of the first spacer sleeve to form spacer fins, and patterning the mask layer using the spacer fins as a first mask element and the second dummy feature as a second mask element.

摘要翻译： 本公开提供了一种制造半导体器件的方法，该半导体器件包括在衬底上形成掩模层，在掩模层上形成具有第一虚拟特征和第二虚拟特征的虚设层，形成第一和第二间隔物顶部以覆盖顶部 分别形成第一和第二间隔套筒以分别围绕第一和第二虚拟特征的侧面部分，去除第一间隔物顶部和第一虚拟特征，同时保护第二虚拟特征，去除 第一间隔套筒的第一端部和第二端部，以形成间隔件翅片，并且使用间隔件翅片作为第一掩模元件并将第二虚拟特征图案化为掩模层作为第二掩模元件。

公开(公告)号：US20100183961A1

公开(公告)日：2010-07-22

申请号：US12356405

申请日：2009-01-20

申请人： Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Shao-Ming Yu ,  Chang-Yun Chang ,  Jeff J. Xu ,  Clement Hsingjen Wann

发明人： Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Shao-Ming Yu ,  Chang-Yun Chang ,  Jeff J. Xu ,  Clement Hsingjen Wann

IPC分类号： G03F7/20 ,  G06F17/50 ,  G03F1/00 ,  G03F7/40

CPC分类号： H01L27/0203 ,  G03F1/00 ,  G03F1/36 ,  H01L21/3086 ,  H01L21/823431 ,  H01L29/66795

摘要： Provided is a method including layout design of an integrated circuit. A first pattern is provided. The first pattern includes an array of dummy line features and a plurality of spacer elements abutting the dummy line features. A second pattern is provided. The second pattern defines an active region of an integrated circuit device. An edge spacer element of the active region is determined. A dummy line feature of the array of dummy line features is biased (e.g., increased in width), the dummy line feature is adjacent an edge spacer element.

摘要翻译： 提供了一种包括集成电路的布局设计的方法。 提供了第一种模式。 第一图案包括虚线特征的阵列和与虚线特征相邻的多个间隔元件。 提供了第二种模式。 第二图案定义了集成电路器件的有源区。 确定有源区的边缘间隔元件。 假线特征阵列的虚线特征被偏置（例如，宽度增加），虚线特征与边缘间隔元件相邻。

公开(公告)号：US20100053575A1

公开(公告)日：2010-03-04

申请号：US12204527

申请日：2008-09-04

申请人： I-Hsiung Huang ,  Tsiao-Chen Wu ,  Hsin-Chang Lee ,  Anthony Yen

发明人： I-Hsiung Huang ,  Tsiao-Chen Wu ,  Hsin-Chang Lee ,  Anthony Yen

IPC分类号： G03B27/52

CPC分类号： G03B27/52 ,  G03F7/70875

摘要： A method of patterning an integrated circuit including generating a thermal profile of a reticle is provided. The thermal profile of the reticle may illustrate heat accumulation (e.g., a temperature) in a EUV reticle due an incident EUV radiation beam. The thermal profile may be determined using the pattern density of the reticle. The reticle is irradiated with a radiation beam having an extreme ultraviolet (EUV) wavelength. A thermal control profile may be generated using the thermal profile, which may define a parameter of the lithography process such as, a temperature gradient of a thermal control chuck. The thermal control profile may be downloaded to the EUV lithography tool (e.g., scanner or stepper) for use in a process. A separate thermal control profile may be provided for different reticles.

摘要翻译： 提供一种图案化集成电路的方法，包括生成掩模版的热分布图。 掩模版的热分布可以说明由于入射的EUV辐射束而导致的EUV掩模版中的热积聚（例如，温度）。 可以使用掩模版的图案密度来确定热分布。 用具有极紫外（EUV）波长的辐射束照射掩模版。 可以使用热分布来产生热控制曲线，其可以限定光刻工艺的参数，例如热控制卡盘的温度梯度。 可以将热控制简档下载到EUV光刻工具（例如扫描器或步进器）以用于一个过程。 可以为不同的掩模版提供单独的热控制轮廓。

公开(公告)号：US06593033B1

公开(公告)日：2003-07-15

申请号：US09399840

申请日：1999-09-21

申请人： Zhiliu Ma ,  Anthony Yen ,  Cesar Garza

发明人： Zhiliu Ma ,  Anthony Yen ,  Cesar Garza

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/29

摘要： An embodiment of the instant invention is a mask having a pattern which is transferred to a layer overlying a semiconductor wafer, the mask comprising: a transmissive portion (structure 102 of FIG. 1), the transmissive portion allowing energy which impinges upon the transmission portion to substantially pass through the transmissive portion; a substantially non-transmissive portion (structure 106 of FIG. 1); a semi-transmissive portion (structure 104 of FIG. 1) situated between the transmissive portion and the substantially non-transmissive portion, energy passing through the semi-transmissive portion having a phase; and wherein the phase of energy which passes through the semi-transmissive portion is out of phase with the phase of energy which passes through the transmissive portion. Preferably, the phase of the energy which passes through the semi-transmissive portion is around 180 degrees out of phase with energy which passes through the transmissive portion.

摘要翻译： 本发明的实施例是具有转移到覆盖半导体晶片的层的图案的掩模，掩模包括：透射部分（图1的结构102），透射部分允许撞击透射部分的能量 以基本上穿过透射部分; 基本上非透射部分（图1的结构106）; 位于透射部分和基本上不透射部分之间的半透射部分（图1的结构104），穿过具有相位的半透射部分的能量; 并且其中穿过半透射部分的能量相位与通过透射部分的能量相位异相。 优选地，通过半透射部分的能量的相位与通过透射部分的能量相差大约180度。

公开(公告)号：US06492073B1

公开(公告)日：2002-12-10

申请号：US09839926

申请日：2001-04-23

申请人： Burn Jeng Lin ,  Ru-Gun Liu ,  Shih-Ying Chen ,  Shinn-Sheng Yu ,  Hua-Tai Lin ,  Anthony Yen ,  Yao-Ching Ku

发明人： Burn Jeng Lin ,  Ru-Gun Liu ,  Shih-Ying Chen ,  Shinn-Sheng Yu ,  Hua-Tai Lin ,  Anthony Yen ,  Yao-Ching Ku

IPC分类号： G03F900

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70441

摘要： A mask set of two masks and a method of using these masks in a double exposure to avoid line shortening due to optical proximity effects is described. A pattern having pattern elements comprising a number of line segments, wherein each of the line segments has one or two free ends which are not connected to other mask pattern elements is to be transferred to a layer of resist. A first mask is formed by adding line extensions to each of the free ends of the line segments. A cutting mask is formed comprising rectangles enclosing each of the line extensions wherein one of the sides of said rectangles is coincident with the corresponding free end of said line segment. The first mask has opaque regions corresponding to the extended line segments. The cutting mask has transparent regions corresponding to the cutting pattern. In another embodiment a pattern having pattern openings comprising a number of line segments. In this embodiment the cutting pattern comprises rectangles having the same width as said line segments and add length to the line segments.

摘要翻译： 描述了两个掩模的掩模组和在双重曝光中使用这些掩模以避免由于光学邻近效应引起的线缩短的方法。 具有包括多个线段的图形元素的图案，其中每个线段具有未连接到其它掩模图案元件的一个或两个自由端将被转移到抗蚀剂层。 通过向线段的每个自由端添加线延伸来形成第一掩模。 形成切割掩模，其包括围绕每个线延伸的矩形，其中所述矩形的一个侧面与所述线段的对应的自由端重合。 第一掩模具有对应于延伸线段的不透明区域。 切割掩模具有对应于切割图案的透明区域。 在另一个实施例中，具有包括多个线段的图案开口的图案。 在该实施例中，切割图案包括具有与所述线段相同宽度的矩形，并且对线段增加长度。