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    INTEGRATED CLOSED-LOOP MEDICATION DELIVERY WITH ERROR MODEL AND SAFETY CHECK
    41.
    发明申请
    INTEGRATED CLOSED-LOOP MEDICATION DELIVERY WITH ERROR MODEL AND SAFETY CHECK 有权

    公开(公告)号：US20210361867A1

    公开(公告)日：2021-11-25

    申请号：US17398221

    申请日：2021-08-10

    Applicant: Abbott Diabetes Care Inc. ,  Cambridge Enterprise Limited

    Inventor： Malgorzata E. Wilinska ,  Erwin S. Budiman ,  Gary A. Hayter ,  Marc B. Taub ,  Roman Hovorka

    IPC: A61M5/172 ,  A61B5/1495 ,  A61B5/145 ,  A61M5/142 ,  G16H20/17

    Abstract: A closed-loop system for insulin infusion overnight uses a model predictive control algorithm (“MPC”). Used with the MPC is a glucose measurement error model which was derived from actual glucose sensor error data. That sensor error data included both a sensor artifacts component, including dropouts, and a persistent error component, including calibration error, all of which was obtained experimentally from living subjects. The MPC algorithm advised on insulin infusion every fifteen minutes. Sensor glucose input to the MPC was obtained by combining model-calculated, noise-free interstitial glucose with experimentally-derived transient and persistent sensor artifacts associated with the FreeStyle Navigator® Continuous Glucose Monitor System (“FSN”). The incidence of severe and significant hypoglycemia reduced 2300- and 200-fold, respectively, during simulated overnight closed-loop control with the MPC algorithm using the glucose measurement error model suggesting that the continuous glucose monitoring technologies facilitate safe closed-loop insulin delivery.

    POWER SEMICONDUCTOR DEVICE WITH AN AUXILIARY GATE STRUCTURE
    43.
    发明申请
    POWER SEMICONDUCTOR DEVICE WITH AN AUXILIARY GATE STRUCTURE 有权

    公开(公告)号：US20210335781A1

    公开(公告)日：2021-10-28

    申请号：US17350490

    申请日：2021-06-17

    Applicant: Cambridge Enterprise Limited

    Inventor： Martin Arnold ,  Loizos Efthymiou ,  Florin Udrea ,  Giorgia Longobardi ,  John William Findlay

    IPC: H01L27/07 ,  H01L29/778 ,  H01L29/20 ,  H01L27/06 ,  H01L29/423 ,  H03K17/0412 ,  H03K17/0812 ,  H03K17/30

    Abstract: Power semiconductor devices in GaN technology include an integrated auxiliary (double) gate terminal and a pulldown network to achieve a normally-off (E-Mode) GaN transistor with threshold voltage higher than 2V, low gate leakage current and enhanced switching performance. The high threshold voltage GaN transistor has a high-voltage active GaN device and a low-voltage auxiliary GaN device wherein the high-voltage GaN device has the gate connected to the source of the integrated auxiliary low-voltage GaN transistor and the drain being the external high-voltage drain terminal and the source being the external source terminal, while the low-voltage auxiliary GaN transistor has the gate (first auxiliary electrode) connected to the drain (second auxiliary electrode) functioning as an external gate terminal. A pull-down network for the switching-off of the high threshold voltage GaN transistor may be formed by additional auxiliary low-voltage GaN transistors and resistive elements connected with the low-voltage auxiliary GaN transistor.

    A PHOTODETECTOR
    44.
    发明申请
    A PHOTODETECTOR 有权

    公开(公告)号：US20210265520A1

    公开(公告)日：2021-08-26

    申请号：US17260912

    申请日：2019-07-16

    Applicant: Cambridge Enterprise Limited

    Inventor： Matthew Applegate ,  Andrew Irvine ,  Crispin Barnes

    IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/18

    Abstract: We disclose herein a photodetector comprising at least one absorption region in which photons are absorbed; and a plurality of electrodes disposed on the at least one absorption region, the electrodes being spaced apart from one another. In use, the geometry of at least one electrode is chosen to enhance the formation of an electric field of the requisite magnitude for avalanche multiplication to occur near the at least one electrode.

    METHOD FOR ELECTROCHEMICALLY ETCHING A SEMICONDUCTOR STRUCTURE
    47.
    发明申请
    METHOD FOR ELECTROCHEMICALLY ETCHING A SEMICONDUCTOR STRUCTURE 有权

    公开(公告)号：US20210057601A1

    公开(公告)日：2021-02-25

    申请号：US16964706

    申请日：2019-01-25

    Applicant: CAMBRIDGE ENTERPRISE LTD

    Inventor： Rachel A. OLIVER ,  Tongtong ZHU ,  Yingjun LIU ,  Peter GRIFFIN

    IPC: H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32

    Abstract: A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material,beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5×1017 cm3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

    PEPTIDE EXCHANGE PROTEIN
    49.
    发明申请
    PEPTIDE EXCHANGE PROTEIN 有权

    公开(公告)号：US20210052695A1

    公开(公告)日：2021-02-25

    申请号：US16964695

    申请日：2019-01-25

    Applicant: Cambridge Enterprise Limited

    Inventor： Louise Helen Boyle ,  Andreas Heinrich Neerincx ,  Florin Tudor ILCA

    IPC: A61K38/16 ,  C12N5/0783 ,  C12N5/0784 ,  C07K14/74

    Abstract: This invention relates to peptide-exchange proteins comprising the luminal domain of TAP-binding protein-related (TAPBPR), which functions as a MHC class I peptide-exchange catalyst when presented to mammalian cells either as a soluble extracellular protein or as a membrane bound cell surface protein. This may be useful in modulating immune responses, including for example loading immunogenic peptide onto tumours or other disease cells to induce their recognition by T cells. Peptide-exchange proteins and methods for their use are provided.

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