公开(公告)号：US08980044B2

公开(公告)日：2015-03-17

申请号：US12855670

申请日：2010-08-12

Applicant: Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

Inventor： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

IPC: H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  F25B49/02 ,  C23C16/46 ,  C23C16/50 ,  C23C16/503 ,  C23C16/52 ,  H01L21/3065 ,  H05H1/46

CPC classification number: H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.

Abstract translation: 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域 每当工件保持在表面上时形成的工件表面界面，以及静电卡盘的内部和外部区域内的内部和外部蒸发器，以及具有各自的内部和切割器膨胀阀的制冷回路，用于控制冷却剂通过内部 和外部蒸发器。 反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和 外部温度传感器。 耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度 传感器分别更接近所需的温度。

公开(公告)号：US08937800B2

公开(公告)日：2015-01-20

申请号：US13867515

申请日：2013-04-22

Applicant: Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

Inventor： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

IPC: H02N13/00 ,  H01L21/67

CPC classification number: H02N13/00 ,  H01L21/67103

Abstract: Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

Abstract translation: 描述了具有RF和温度均匀性的静电卡盘（ESCs）。 例如，ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方，第三介电层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。

公开(公告)号：US20140346743A1

公开(公告)日：2014-11-27

申请号：US14447557

申请日：2014-07-30

Applicant: Hamid Tavassoli ,  Surajit Kumar ,  Kallol Bera ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

Inventor： Hamid Tavassoli ,  Surajit Kumar ,  Kallol Bera ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

IPC: B23B31/28 ,  B23Q3/15

CPC classification number: B23B31/28 ,  B23B2231/24 ,  B23Q3/15 ,  H01L21/67069 ,  H01L21/6833 ,  H05H1/46 ,  Y10T279/23

Abstract: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

Abstract translation: 一种静电卡盘组件，包括具有顶表面以支撑工件的电介质层。 布置在电介质层下方的冷却通道底座包括设置在顶表面的内部下方的多个内部流体导管，以及设置在顶部表面的外部部分下方的多个外部流体导管。 卡盘组件包括设置在内部和外部流体管道之间的冷却通道底部内的热断裂。 卡盘组件包括布置在冷却通道底部和底板下方的流体分配板，用于将从公共输入端输送的传热流体分配到每个内部或外部流体导管。 内部输入歧管的分支可以具有基本相等的流体电导。

公开(公告)号：US20130279066A1

公开(公告)日：2013-10-24

申请号：US13867515

申请日：2013-04-22

Applicant: Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, JR. ,  Samer Banna

Inventor： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, JR. ,  Samer Banna

IPC: H02N13/00

CPC classification number: H02N13/00 ,  H01L21/67103

Abstract: Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

Abstract translation: 描述了具有RF和温度均匀性的静电卡盘（ESCs）。 例如，ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方，第三电介质层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。

公开(公告)号：US08329586B2

公开(公告)日：2012-12-11

申请号：US12949028

申请日：2010-11-18

Applicant: Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

Inventor： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

Abstract: A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes an evaporator inside the electrostatic chuck, while pressurizing a workpiece-to-chuck interface with a thermally conductive gas, sensing conditions in the chamber including temperature near the workpiece and simulating heat flow through the electrostatic chuck in a thermal model of the chuck based upon the conditions. The method further includes obtaining the next scheduled change in RF heat load on the workpiece and using the model to estimate a change in thermal conditions of the coolant in the evaporator that would hold the temperature nearly constant by compensating for the next scheduled change in RF heat load, and making the change in thermal conditions of the coolant in the evaporator prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.

Abstract translation: 一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过包括静电卡盘内的蒸发器的制冷回路，同时对工件 - 卡盘 与导热气体接触，基于条件，感测室内的条件，包括工件附近的温度，并模拟卡盘热模型中通过静电卡盘的热流。 该方法还包括获得在工件上的RF热负荷的下一个预定的改变，并且使用该模型来估计蒸发器中的冷却剂的热条件的变化，该变化将通过补偿下一个预定的RF热变化来保持温度几乎恒定 在通过静电卡盘的热传播延迟的头开始的下一次预定改变之前，在蒸发器中的冷却剂的热条件的变化。

公开(公告)号：US20120199071A1

公开(公告)日：2012-08-09

申请号：US13446732

申请日：2012-04-13

Applicant: KENNETH S. COLLINS ,  Andrew N. Nguyen ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Douglas A. Buchberger, JR. ,  Daniel J. Hoffman ,  Amir Al-Bayati

Inventor： KENNETH S. COLLINS ,  Andrew N. Nguyen ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Douglas A. Buchberger, JR. ,  Daniel J. Hoffman ,  Amir Al-Bayati

IPC: C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32458 ,  H01J37/32412 ,  H01J37/32477

Abstract: Embodiments described herein relate to a plasma chamber and processing system utilizing robust components. In one embodiment, a chamber is provided. The chamber includes a body having an interior volume, a gas distribution assembly disposed in the interior volume opposing a substrate support, the gas distribution assembly having a coolant channel disposed thereon, and a first hollow conduit and a second hollow conduit coupled to the body and in fluid communication with the interior volume.

Abstract translation: 本文所述的实施例涉及使用鲁棒部件的等离子体室和处理系统。 在一个实施例中，提供了一个室。 所述腔室包括具有内部体积的本体，设置在所述内部体积中与衬底支撑件相对的气体分配组件，所述气体分配组件具有设置在其上的冷却剂通道，以及联接到所述主体的第一中空导管和第二中空导管， 与内部容积流体连通。

公开(公告)号：US20110068085A1

公开(公告)日：2011-03-24

申请号：US12953793

申请日：2010-11-24

Applicant: Paul Lukas Brillhart ,  Richard Fovell ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

Inventor： Paul Lukas Brillhart ,  Richard Fovell ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC: G01L19/04

CPC classification number: H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

Abstract: A method of controlling wafer temperature in a plasma reactor by obtaining the next scheduled change in RF heat load on the workpiece, and using thermal modeling to estimate respective changes in wafer backside gas pressure and in coolant flow through a wafer support pedestal that would compensate for the next scheduled change in RF heat load, and making the respective changes in the backside gas pressure or in the coolant flow prior to the time of the next scheduled change.

Abstract translation: 一种通过获得工件上的RF热负荷的下一个预定的改变来控制等离子体反应器中的晶片温度的方法，并且使用热模型来估计晶片背面气体压力的相应变化以及通过晶片支撑基座的冷却剂流动，其将补偿 下一个预定的RF热负荷的变化，并且在下一个预定的改变之前使背侧气体压力或冷却剂流中的各个变化。

公开(公告)号：US20100300621A1

公开(公告)日：2010-12-02

申请号：US12855680

申请日：2010-08-12

Applicant: Paul Lukas Brillhart ,  Richard Fovell ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

Inventor： Paul Lukas Brillhart ,  Richard Fovell ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC: C23F1/08 ,  F25D15/00

CPC classification number: H01L21/67109

Abstract: A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.

Abstract translation: 在RF耦合的等离子体反应器中将热量传递到工件支架的方法包括：将冷却剂放置在位于工件支架内部的内部流动通道中，并通过使冷却剂循环通过制冷循环来将热量传递或传递给冷却剂， 工件支撑件的内部流动通道构成制冷回路的蒸发器。 该方法还包括将蒸发器内部的冷却剂的热条件保持在工件支承件和冷却剂之间的热交换主要或仅通过冷却剂的潜热潜热的范围内。

公开(公告)号：US07754997B2

公开(公告)日：2010-07-13

申请号：US11924086

申请日：2007-10-25

Applicant: Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

Inventor： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

IPC: B23K9/00

CPC classification number: H01J37/321 ,  H01J37/32633 ,  H01J37/3266

Abstract: An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

Abstract translation: 一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。 在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。 每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

公开(公告)号：US20090274590A1

公开(公告)日：2009-11-05

申请号：US12142640

申请日：2008-06-19

Applicant: MICHAEL D. WILLWERTH ,  David Palagashvili ,  Brian K. Hatcher ,  Alexander M. Paterson ,  Douglas A. Buchberger, JR.

Inventor： MICHAEL D. WILLWERTH ,  David Palagashvili ,  Brian K. Hatcher ,  Alexander M. Paterson ,  Douglas A. Buchberger, JR.

IPC: H05H1/24

CPC classification number: H01L21/68792 ,  H01L21/67109

Abstract: A workpiece support pedestal includes an insulating puck having a workpiece support surface, a conductive plate underlying the puck, the puck containing electrical utilities and thermal media channels, and an axially translatable coaxial RF path assembly underlying the conductive plate. The coaxial RF path assembly includes a center conductor, a grounded outer conductor and a tubular insulator separating the center and outer conductors, whereby the puck, plate and coaxial RF path assembly comprise a movable assembly whose axial movement is controlled by a lift servo. Plural conduits extend axially through the center conductor and are coupled to the thermal media utilities. Plural electrical conductors extend axially through the tubular insulator and are connected to the electrical utilities.

Abstract translation: 工件支撑基座包括具有工件支撑表面的绝缘圆盘，位于圆盘下方的导电板，包含电力设施和热介质通道的圆盘以及导电板下面的可轴向平移的同轴RF路径组件。 同轴RF路径组件包括中心导体，接地外部导体和分离中心和外部导体的管状绝缘体，由此，圆盘，板和同轴RF路径组件包括可移动组件，其轴向运动由升力伺服控制。 多个管道轴向延伸穿过中心导体并且耦合到热介质实用程序。 多个电导体轴向地延伸穿过管状绝缘体并连接到电力设施。