公开(公告)号：US09520315B2

公开(公告)日：2016-12-13

申请号：US14145702

申请日：2013-12-31

申请人： Vijay D. Parkhe ,  Matthew J. Busche ,  Wendell Boyd, Jr. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

发明人： Vijay D. Parkhe ,  Matthew J. Busche ,  Wendell Boyd, Jr. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

IPC分类号： H01L21/683 ,  H01L21/67

CPC分类号： H01L21/6831 ,  H01L21/67109 ,  Y10T137/0318

摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones. A plurality of adjustable orifices are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

摘要翻译： 使用外部流量调节来描述静电卡盘，以改善温度分布。 在一个示例中，设备具有用于静电地夹持硅晶片的电介质盘。 冷却板被固定并且热耦合到陶瓷盘。 供应气室从外部源接收冷却剂，并且多个冷却剂室热耦合到冷却板并从供应气室接收冷却剂。 回流室连接到冷却区以从冷却区排出冷却剂。 多个可调节的孔口位于供气室和相应的一个冷却区之间，以控制从供气室到冷却区域的冷却剂流量。

公开(公告)号：US08797705B2

公开(公告)日：2014-08-05

申请号：US12557387

申请日：2009-09-10

申请人： John C. Valcore, Jr. ,  Saurabh Ullal ,  Daniel Byun ,  Ed Santos ,  Konstantin Makhratchev

发明人： John C. Valcore, Jr. ,  Saurabh Ullal ,  Daniel Byun ,  Ed Santos ,  Konstantin Makhratchev

IPC分类号： H01L21/683 ,  H01T23/00 ,  H02H1/00

CPC分类号： H01L21/6831 ,  H01L21/67069

摘要： A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.

摘要翻译： 一种用于优化解扣序列的方法，其包括从下电极去除衬底。 该方法包括执行初始分析以确定在解扣序列期间形成的等离子体的第一组电特性数据是否穿过阈值。 如果是这样，关闭惰性气体。 该方法还包括从下电极稍微升高升降器销，以向上移动基板。 该方法还包括执行机械和电气分析，其包括将包括提升器引脚施加的力的第一组机械数据与阈值进行比较。 机械和电气分析还包括将第二组电特性数据与阈值进行比较。 如果两者都穿过相应的阈值，则由于发生了衬底释放事件而从底部电极去除衬底。

公开(公告)号：US09281226B2

公开(公告)日：2016-03-08

申请号：US13766208

申请日：2013-02-13

申请人： Konstantin Makhratchev ,  Jennifer Y. Sun

发明人： Konstantin Makhratchev ,  Jennifer Y. Sun

IPC分类号： B23K10/00 ,  H01L21/683 ,  H01R43/16 ,  H01L21/67

CPC分类号： H01L21/6833 ,  B23K10/00 ,  H01L21/67103 ,  H01R43/16 ,  Y10T29/49204

摘要： Embodiments of the invention generally relate to an electrostatic chuck having reduced power loss, and methods and apparatus for reducing power loss in an electrostatic chuck, as well as methods for testing and manufacture thereof. In one embodiment, an electrostatic chuck is provided. The electrostatic chuck includes a conductive base, and a ceramic body disposed on the conductive base, the ceramic body comprising an electrode and one or more heating elements embedded therein, wherein the ceramic body comprises a dissipation factor of about 0.11 to about 0.16 and a capacitance of about 750 picoFarads to about 950 picoFarads between the electrode and the one or more heating elements.

摘要翻译： 本发明的实施例一般涉及具有降低的功率损耗的静电卡盘，以及用于减少静电卡盘中的功率损耗的方法和装置，以及用于其的测试和制造方法。 在一个实施例中，提供静电卡盘。 静电卡盘包括导电基体和布置在导电基底上的陶瓷体，陶瓷体包括电极和嵌入其中的一个或多个加热元件，其中陶瓷体包括约0.11至约0.16的损耗因数和电容 在电极和一个或多个加热元件之间约750皮微米至约950皮克级。

公开(公告)号：US20150340255A1

公开(公告)日：2015-11-26

申请号：US14282503

申请日：2014-05-20

申请人： Vijay Parkhe ,  Konstantin Makhratchev

发明人： Vijay Parkhe ,  Konstantin Makhratchev

IPC分类号： H01L21/67 ,  F28F3/12 ,  H01L21/683

CPC分类号： H01L21/67109 ,  F28F3/12 ,  H01L21/6831

摘要： An electrostatic chuck is described with independent zone cooling that leads to reduced crosstalk. In one example, the chuck includes a puck to carry a substrate for fabrication processes, and a cooling plate fastened to and thermally coupled to the ceramic puck, the cooling plate having a plurality of different independent cooling channels to carry a heat transfer fluid to transfer heat from the cooling plate.

摘要翻译： 使用独立的区域冷却来描述静电卡盘，导致减少的串扰。 在一个示例中，卡盘包括用于承载用于制造工艺的基底的圆盘，以及紧固到陶瓷盘并且热耦合到陶瓷盘的冷却板，冷却板具有多个不同的独立冷却通道，以承载传热流体以传递 来自冷却板的热量。

公开(公告)号：US09622375B2

公开(公告)日：2017-04-11

申请号：US14145680

申请日：2013-12-31

申请人： Matthew J. Busche ,  Vijay D. Parkhe ,  Wendell Boyd, Jr. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

发明人： Matthew J. Busche ,  Vijay D. Parkhe ,  Wendell Boyd, Jr. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

IPC分类号： H01L21/683 ,  H05K7/20 ,  H01L21/67

CPC分类号： H01L21/6833 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H05K7/20218

摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones and a plurality of flow control valves are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

公开(公告)号：US20130284374A1

公开(公告)日：2013-10-31

申请号：US13793512

申请日：2013-03-11

申请人： Dmitry LUBOMIRSKY ,  Jennifer Y. SUN ,  Senh THACH ,  Xing LIN ,  Michael D. WILLWERTH ,  Konstantin MAKHRATCHEV

发明人： Dmitry LUBOMIRSKY ,  Jennifer Y. SUN ,  Senh THACH ,  Xing LIN ,  Michael D. WILLWERTH ,  Konstantin MAKHRATCHEV

IPC分类号： H02N13/00

CPC分类号： H02N13/00 ,  B23B31/28 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68792

摘要： Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.

摘要翻译： 本发明的实施例提供了用于在升高的温度下操作的静电卡盘。 本发明的一个实施例提供了一种用于静电卡盘的电介质卡盘体。 电介质卡盘体包括：基板支撑板，具有用于接收基板的顶表面和与顶表面相对的后表面;嵌入在基板支撑板中的电极;以及轴，其具有连接到基板的背面的第一端 支撑板和与第一端相对的第二端。 第二端构造成接触冷却基座并且向衬底支撑板提供温度控制。 轴是中空的，具有封闭中心开口的侧壁，以及穿过侧壁形成并且从第一端延伸到第二端的两个或更多个通道。

公开(公告)号：US20110043228A1

公开(公告)日：2011-02-24

申请号：US12545293

申请日：2009-08-21

申请人： Konstantin Makhratchev ,  John Valcore

发明人： Konstantin Makhratchev ,  John Valcore

IPC分类号： G01R27/08

CPC分类号： H01J37/32642 ,  H01J37/32935

摘要： A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.

摘要翻译： 一种用于具有等离子体形成体积和热边缘环的晶片处理室中的装置。 热边缘环具有第一表面和第二表面。 第一表面与等离子体形成体积接触。 第二表面不与等离子体形成体积接触。 该装置包括可操作以接触热边缘环的第二表面的检测器。 检测器可以检测热边缘环的参数，并可以根据检测到的参数提供检测信号。

公开(公告)号：US20150187626A1

公开(公告)日：2015-07-02

申请号：US14145702

申请日：2013-12-31

申请人： Vijay D. Parkhe ,  Matthew J. Busche ,  Wendell Boyd, JR. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

发明人： Vijay D. Parkhe ,  Matthew J. Busche ,  Wendell Boyd, JR. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

IPC分类号： H01L21/683

CPC分类号： H01L21/6831 ,  H01L21/67109 ,  Y10T137/0318

摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones. A plurality of adjustable orifices are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

摘要翻译： 使用外部流量调节描述静电卡盘，以改善温度分布。 在一个示例中，设备具有用于静电地夹持硅晶片的电介质盘。 冷却板被固定并且热耦合到陶瓷盘。 供应气室从外部源接收冷却剂，并且多个冷却剂室热耦合到冷却板并从供应气室接收冷却剂。 回流室连接到冷却区以从冷却区排出冷却剂。 多个可调节的孔口位于供气室和相应的一个冷却区之间，以控制从供气室到冷却区的冷却剂的流量。

公开(公告)号：US20150187625A1

公开(公告)日：2015-07-02

申请号：US14145680

申请日：2013-12-31

申请人： Matthew J. Busche ,  Vijay De. Parkhe ,  Wendell Boyd, JR. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

发明人： Matthew J. Busche ,  Vijay De. Parkhe ,  Wendell Boyd, JR. ,  Senh Thach ,  Konstantin Makhratchev ,  Masanori Ono

IPC分类号： H01L21/683 ,  H05K7/20

CPC分类号： H01L21/6833 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H05K7/20218

摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones and a plurality of flow control valves are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

摘要翻译： 使用外部流量调节来描述静电卡盘，以改善温度分布。 在一个示例中，设备具有用于静电地夹持硅晶片的电介质盘。 冷却板被固定并且热耦合到陶瓷盘。 供应气室从外部源接收冷却剂，并且多个冷却剂室热耦合到冷却板并从供应气室接收冷却剂。 回流通风室联接到冷却区域以从冷却区域排出冷却剂，并且多个流量控制阀定位在供应压力室和相应的一个冷却区域之间，以控制从供气室到冷却区的冷却剂的流量 冷却区。

公开(公告)号：US20130284709A1

公开(公告)日：2013-10-31

申请号：US13766208

申请日：2013-02-13

申请人： Konstantin MAKHRATCHEV ,  Jennifer Y. SUN

发明人： Konstantin MAKHRATCHEV ,  Jennifer Y. SUN

IPC分类号： H01L21/683 ,  H01R43/16 ,  B23K10/00

CPC分类号： H01L21/6833 ,  B23K10/00 ,  H01L21/67103 ,  H01R43/16 ,  Y10T29/49204

摘要： Embodiments of the invention generally relate to an electrostatic chuck having reduced power loss, and methods and apparatus for reducing power loss in an electrostatic chuck, as well as methods for testing and manufacture thereof. In one embodiment, an electrostatic chuck is provided. The electrostatic chuck includes a conductive base, and a ceramic body disposed on the conductive base, the ceramic body comprising an electrode and one or more heating elements embedded therein, wherein the ceramic body comprises a dissipation factor of about 0.11 to about 0.16 and a capacitance of about 750 picoFarads to about 950 picoFarads between the electrode and the one or more heating elements.

摘要翻译： 本发明的实施例一般涉及具有降低的功率损耗的静电卡盘，以及用于减少静电卡盘中的功率损耗的方法和装置，以及用于其的测试和制造方法。 在一个实施例中，提供静电卡盘。 静电卡盘包括导电基体和布置在导电基底上的陶瓷体，陶瓷体包括电极和嵌入其中的一个或多个加热元件，其中陶瓷体包括约0.11至约0.16的损耗因数和电容 在电极和一个或多个加热元件之间约750皮微米至约950皮克级。