公开(公告)号：US06350699B1

公开(公告)日：2002-02-26

申请号：US09584407

申请日：2000-05-30

Applicant: Jer-shen Maa ,  Fengyan Zhang

Inventor： Jer-shen Maa ,  Fengyan Zhang

IPC: H01L2100

CPC classification number: H01L21/32136 ,  C23F4/00

Abstract: A method of anisotropically etching metals, especially iridium, platinum, ruthenium, osmium, and rhenium using a non-chlorofluorocarbon, fluorine-based chemistry. A substrate having metal deposited thereon, is inserted into an ECR plasma etch chamber and heated. A fluorine containing gas, such as, carbon tetrafluoride (CF4), nitrogen trifluoride (NF3) or sulfur hexafluoride (SF6) is introduced into the chamber and ionized to form a plasma. Fluorine ions within the plasma strike, or contact, the metal to form volatile metal-fluorine compounds. The metal-fluorine compounds are exhausted away from the substrate to reduce, or eliminate, redeposition of etch reactants.

Abstract translation: 使用非氯氟烃氟基化学物质各向异性蚀刻金属，特别是铱，铂，钌，锇和铼的方法。 将其上沉积有金属的衬底插入到ECR等离子体蚀刻室中并加热。 将四氟化碳（CF 4），三氟化氮（NF 3）或六氟化硫（SF 6）等含氟气体引入室内并离子化形成等离子体。 等离子体内的氟离子冲击，或接触金属，形成挥发性金属氟化合物。 金属 - 氟化合物从衬底排出，以减少或消除蚀刻反应物的再沉积。

公开(公告)号：US20120192930A1

公开(公告)日：2012-08-02

申请号：US13019879

申请日：2011-02-02

Applicant: ROBERT V. FOX ,  FENGYAN ZHANG ,  RENE G. RODRIGUEZ ,  JOSHUA J. PAK ,  CHIVIN SUN

Inventor： ROBERT V. FOX ,  FENGYAN ZHANG ,  RENE G. RODRIGUEZ ,  JOSHUA J. PAK ,  CHIVIN SUN

IPC: H01L31/02 ,  H01L31/18 ,  C01B17/00 ,  H01B1/02 ,  B82Y30/00

CPC classification number: B82Y30/00 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/84 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/40 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541

Abstract: Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

Abstract translation: 将单源前体或单源前体的预共聚物进行微波辐射以形成I-III-VI2材料的颗粒。 这样的颗粒可以以纤锌矿相形成，并且可以通过例如暴露于热而转变成黄铜矿相。 纤锌矿相中的颗粒可以具有基本上六边形的形状，其能够堆叠成有序层。 纤锌矿相中的颗粒可以与黄铜矿相中的颗粒（即，黄铜矿纳米颗粒）混合，其可以填充纤锌矿相中颗粒的有序层内的空隙，从而产生具有良好覆盖率的膜。 在一些实施例中，所述方法用于形成包含I-III-VI2材料的半导体材料层。 可以使用这样的方法来制造诸如薄膜太阳能电池的装置。

公开(公告)号：US07727897B2

公开(公告)日：2010-06-01

申请号：US11215519

申请日：2005-08-30

Applicant: Bruce D. Ulrich ,  Lisa H. Stecker ,  Fengyan Zhang ,  Sheng Teng Hsu

Inventor： Bruce D. Ulrich ,  Lisa H. Stecker ,  Fengyan Zhang ,  Sheng Teng Hsu

IPC: H01L21/302

CPC classification number: H01L28/55 ,  H01L21/31122

Abstract: A method of etching a top electrode/ferroelectric stack using an etch stop layer includes forming a first layer of a first dielectric material on a substrate; forming a bottom electrode in the first layer of a first dielectric material; depositing an etch stop layer on the first layer of the first dielectric material and the bottom electrode, including forming a hole therein; depositing a layer of ferroelectric material and depositing top electrode material on the ferroelectric material to form a top electrode/ferroelectric stack; stack etching the top electrode and ferroelectric material; depositing a layer of a second dielectric material encapsulating the top electrode and ferroelectric material; etching the layer of the second dielectric material to form a sidewall about the top electrode and ferroelectric material; and depositing a second and third layers of the first dielectric material.

Abstract translation: 使用蚀刻停止层蚀刻顶部电极/铁电体堆叠的方法包括在衬底上形成第一电介质材料的第一层; 在第一介电材料的第一层中形成底电极; 在所述第一电介质材料和所述底电极的所述第一层上沉积蚀刻停止层，包括在其中形成孔; 沉积一层铁电材料层并在铁电材料上沉积顶部电极材料以形成顶部电极/铁电堆叠; 堆叠蚀刻顶部电极和铁电材料; 沉积封装上电极和铁电材料的第二电介质材料层; 蚀刻第二介电材料的层以形成围绕顶电极和铁电材料的侧壁; 以及沉积所述第一介电材料的第二和第三层。

公开(公告)号：US20090011536A1

公开(公告)日：2009-01-08

申请号：US11496157

申请日：2006-07-31

Applicant: Fengyan Zhang ,  Sheng Teng Hsu

Inventor： Fengyan Zhang ,  Sheng Teng Hsu

IPC: H01L21/00

CPC classification number: C30B25/00 ,  A61N1/0543 ,  B82Y5/00 ,  B82Y10/00 ,  B82Y30/00 ,  C30B29/16 ,  C30B29/605 ,  Y10S977/811 ,  Y10S977/904 ,  Y10S977/932

Abstract: An optical device with an iridium oxide (IrOx) electrode neural interface, and a corresponding fabrication method are provided. The method provides a substrate and forms a first conductive electrode overlying the substrate. A photovoltaic device having a first electrical interface is connected to the first electrode. A second electrical interface of the photovoltaic device is connected to a second conductive electrode formed overlying the photovoltaic device. An array of neural interface single-crystal IrOx nanostructures are formed overlying the second electrode, where x≦4. The IrOx nanostructures can be partially coated with an electrical insulator, such as SiO2, SiN, TiO2, or spin on glass (SOG), leaving the IrOx distal ends exposed. In one aspect, a buffer layer is formed overlying the second electrode surface, made from a material such as LiNbO3, LiTaO3, or SA, for the purpose of orienting the growth direction of the IrOx nanostructures.

Abstract translation: 提供了具有氧化铱（IrOx）电极神经接口的光学器件及相应的制造方法。 该方法提供了一个衬底并且形成了覆盖衬底的第一导电电极。 具有第一电接口的光电器件连接到第一电极。 光电器件的第二电接口连接到形成在光伏器件上的第二导电电极。 形成了覆盖第二电极的神经界面单晶IrOx纳米结构阵列，其中x <= 4。 IrOx纳米结构可以部分地涂覆有诸如SiO 2，SiN，TiO 2或旋转玻璃（SOG）之类的电绝缘体，使得IrOx远端暴露。 在一个方面，为了定向IrOx纳米结构的生长方向，形成了由诸如LiNbO 3，LiTaO 3或SA的材料制成的第二电极表面上的缓冲层。

公开(公告)号：US20080299381A1

公开(公告)日：2008-12-04

申请号：US11809959

申请日：2007-06-04

Applicant: Fengyan Zhang ,  Bruce D. Ulrich ,  Wei Gao ,  Sheng Teng Hsu

Inventor： Fengyan Zhang ,  Bruce D. Ulrich ,  Wei Gao ,  Sheng Teng Hsu

IPC: B32B3/26 ,  B05D5/12

CPC classification number: A61N1/0543 ,  B82Y15/00 ,  B82Y30/00 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49165 ,  Y10T29/49167 ,  Y10T29/49169 ,  Y10T428/24998

Abstract: An iridium oxide (IrOx) nanowire neural sensor array and associated fabrication method are provided. The method provides a substrate with a conductive layer overlying the substrate, and a dielectric layer overlying the conductive layer. The substrate can be a material such as Si, SiO2, quartz, glass, or polyimide, and the conductive layer is a material such as ITO, SnO2, ZnO, TiO2, doped ITO, doped SnO2, doped ZnO, doped TiO2, TiN, TaN, Au, Pt, or Ir. The dielectric layer is selectively wet etched, forming contact holes with sloped walls in the dielectric layer and exposing regions of the conductive layer. IrOx nanowire neural interfaces are grown from the exposed regions of the conductive layer. The IrOx nanowire neural interfaces each have a cross-section in a range of 0.5 to 10 micrometers, and may be shaped as a circle, rectangle, or oval.

Abstract translation: 提供氧化铱（IrOx）纳米线神经传感器阵列及相关制造方法。 该方法提供了具有覆盖在衬底上的导电层的衬底和覆盖导电层的电介质层。 基板可以是诸如Si，SiO 2，石英，玻璃或聚酰亚胺的材料，并且导电层是诸如ITO，SnO 2，ZnO，TiO 2，掺杂的ITO，掺杂的SnO 2，掺杂的ZnO，掺杂的TiO 2，TiN， TaN，Au，Pt或Ir。 电介质层被选择性地湿蚀刻，与电介质层中的倾斜壁形成接触孔并且暴露导电层的区域。 IrOx纳米线神经接口从导电层的暴露区域生长。 IrOx纳米线神经接口各自具有在0.5至10微米的范围内的横截面，并且可以被成形为圆形，矩形或椭圆形。

公开(公告)号：US20080290431A1

公开(公告)日：2008-11-27

申请号：US11805011

申请日：2007-05-22

Applicant: Fengyan Zhang ,  Bruce D. Ulrich ,  Wei Pan ,  Lawrence J. Charneski ,  Sheng Teng Hsu

Inventor： Fengyan Zhang ,  Bruce D. Ulrich ,  Wei Pan ,  Lawrence J. Charneski ,  Sheng Teng Hsu

IPC: H01L29/84 ,  H01L21/20

CPC classification number: G01N27/127 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/41

Abstract: A nanorod sensor with a single plane of horizontally-aligned electrodes and an associated fabrication method are provided. The method provides a substrate and forms an intermediate electrode overlying a center region of the substrate. The intermediate electrode is a patterned bottom noble metal/Pt/Ti multilayered stack. TiO2 nanorods are formed over the substrate and intermediate electrode, and a TiO2 film may be formed overlying the TiO2 nanorods. The TiO2 nanorods and TiO2 film are formed in-situ, in the same process, by varying the substrate temperature. In other aspects, the TiO2 film is formed between the nanorods and the intermediate electrode. In yet another aspect, the TiO2 film is formed both above and below the nanorods. A single plane of top electrodes is formed overlying the TiO2 film from a top noble metal/Pt/Ti multilayered stack overlying the TiO2 film, which has been selectively etched to form separate top electrodes.

Abstract translation: 提供了具有水平对准电极的单个平面的纳米棒传感器和相关联的制造方法。 该方法提供了一个衬底，并形成了覆盖衬底中心区域的中间电极。 中间电极是图案化的底部贵金属/ Pt / Ti多层叠层。 在衬底和中间电极上形成TiO 2纳米棒，并且可以在TiO 2纳米棒上形成TiO 2膜。 通过改变衬底温度，在相同的工艺中原位形成TiO 2纳米棒和TiO 2膜。 在其他方面，在纳米棒和中间电极之间形成TiO 2膜。 在另一方面，在纳米棒上方和下方形成TiO 2膜。 顶层电极的单面由覆盖在TiO 2膜上的顶部贵金属/ Pt / Ti多层叠层覆盖在TiO 2膜上，该TiO 2膜被选择性地蚀刻以形成分离的顶电极。

公开(公告)号：US07438759B2

公开(公告)日：2008-10-21

申请号：US11264113

申请日：2005-11-01

Applicant: Fengyan Zhang ,  Robert A. Barrowcliff ,  Jong-Jan Lee ,  Sheng Teng Hsu

Inventor： Fengyan Zhang ,  Robert A. Barrowcliff ,  Jong-Jan Lee ,  Sheng Teng Hsu

IPC: C30B1/02

CPC classification number: B81C1/00182 ,  B81B2201/0214 ,  Y10S977/712 ,  Y10S977/762

Abstract: An ambient environment nanowire sensor and corresponding fabrication method have been provided. The method includes: forming a substrate such as Silicon (Si) or glass; growing nanowires; depositing an insulator layer overlying the nanowires; etching to expose tips of the nanowires; forming a patterned metal electrode, with edges, overlying the tips of the nanowires; and, etching to expose the nanowires underlying the electrode edges. The nanowires can be a material such as IrO2, TiO2, InO, ZnO, SnO2, Sb2O3, or In2O3, to mane just a few examples. The insulator layer can be a spin-on glass (SOG) or low-k dielectric. In one aspect, the resultant structure includes exposed nanowires grown from the doped substrate regions and an insulator core with embedded nanowires. In a different aspect, the method forms a growth promotion layer overlying the substrate. The resultant structure includes exposed nanowires grown from the selectively formed growth promotion layer.

公开(公告)号：US20080157354A1

公开(公告)日：2008-07-03

申请号：US11649523

申请日：2007-01-03

Applicant: Fengyan Zhang ,  Sheng Teng Hsu

Inventor： Fengyan Zhang ,  Sheng Teng Hsu

IPC: H01L27/00 ,  H01L21/02

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  G01N27/127 ,  H01L29/0673 ,  H01L29/0676 ,  H01L31/03529 ,  Y02E10/50

Abstract: A method of fabricating a stacked nanostructure array includes preparing a substrate; forming a bottom electrode directly on the substrate; growing a first nanostructure array directly on the bottom electrode; forming an insulating layer on the first nanostructure array; exposing the upper surface of the first nanostructure array; depositing a second, and subsequent, nanostructure array on a nanostructure array immediately below the second and subsequent nanostructure array; repeating said forming, said exposing and said depositing a subsequent steps to form a stacked nanostructure array; removing an uppermost insulating layer; and forming a top electrode on an uppermost nanostructure array. A sensor incorporating the nanostructure array includes top and bottom electrodes with plural layers of nanostructure array therebetween.

Abstract translation: 一种叠层纳米结构阵列的制造方法包括：制备衬底; 直接在基板上形成底部电极; 直接在底部电极上生长第一个纳米结构阵列; 在所述第一纳米结构阵列上形成绝缘层; 暴露第一纳米结构阵列的上表面; 在第二和随后的纳米结构阵列正下方的纳米结构阵列上沉积第二和随后的纳米结构阵列; 重复所述形成，所述曝光和沉积随后的步骤以形成堆叠的纳米结构阵列; 去除最上层绝缘层; 并在最上面的纳米结构阵列上形成顶部电极。 结合纳米结构阵列的传感器包括其间具有多层纳米结构阵列的顶部和底部电极。

公开(公告)号：US07379320B2

公开(公告)日：2008-05-27

申请号：US11262117

申请日：2005-10-28

Applicant: Sheng Teng Hsu ,  Fengyan Zhang ,  Tingkai Li

Inventor： Sheng Teng Hsu ,  Fengyan Zhang ,  Tingkai Li

IPC: G11C11/22 ,  H01L21/8246 ,  H01L21/8247

CPC classification number: H01L27/1159 ,  H01L21/84 ,  H01L27/11502 ,  H01L27/11585

Abstract: An MFIS memory array having a plurality of MFIS memory transistors with a word line connecting a plurality of MFIS memory transistor gates, wherein all MFIS memory transistors connected to a common word line have a common source, each transistor drain serves as a bit output, and all MFIS channels along a word line are separated by a P+ region and are further joined to a P+ substrate region on an SOI substrate by a P+ region is provided. Also provided are methods of making an MFIS memory array on an SOI substrate; methods of performing a block erase of one or more word lines, and methods of selectively programming a bit.

Abstract translation: 一种MFIS存储器阵列，具有多个具有连接多个MFIS存储晶体管栅极的字线的MFIS存储晶体管，其中连接到公共字线的所有MFIS存储晶体管具有公共源，每个晶体管漏极用作位输出，以及 沿着字线的所有MFIS通道被P +区隔开，并且通过P +区进一步连接到SOI衬底上的P +衬底区域。 还提供了在SOI衬底上制造MFIS存储器阵列的方法; 执行一个或多个字线的块擦除的方法以及有选择地编程位的方法。

公开(公告)号：US07364924B2

公开(公告)日：2008-04-29

申请号：US11061946

申请日：2005-02-17

Applicant: Sheng Teng Hsu ,  Fengyan Zhang ,  Gregory M. Stecker ,  Robert A. Barrowcliff

Inventor： Sheng Teng Hsu ,  Fengyan Zhang ,  Gregory M. Stecker ,  Robert A. Barrowcliff

IPC: H01L21/00

CPC classification number: H05B33/145

Abstract: An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top electrode. The Si phosphor layer is interposed between the bottom and top electrodes. The nanotips may have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. Typically, the nanotips are formed from iridium oxide (IrOx) nanotips. A MOCVD process forms the Ir bottom electrode. The IrOx nanotips are grown from the Ir. In one aspect, the Si phosphor layer is a SRSO layer. In response to an SRSO annealing step, nanocrystalline SRSO is formed with nanocrystals having a size in the range of 1 to 10 nm.

Abstract translation: 提供了一种电致发光（EL）器件和用于制造具有纳米尖端电极的所述器件的方法。 该方法包括：形成具有纳米尖端的底部电极; 在所述纳米尖端附近形成Si磷光体层; 并形成透明的顶部电极。 Si荧光体层介于底部和顶部电极之间。 纳米尖端可以具有约50纳米或更小的尖端基部尺寸，5至50nm范围内的尖端高度，以及每平方毫米大于100纳米尖端的纳米密度密度。 通常，纳米尖端由氧化铱（IrOx）纳米尖端形成。 MOCVD工艺形成Ir底部电极。 IrOx纳米尖嘴从Ir生长。 在一个方面，Si磷光体层是SRSO层。 响应于SRSO退火步骤，形成具有1至10nm范围内的尺寸的纳米晶体的纳米晶SRSO。