公开(公告)号：US20080166842A1

公开(公告)日：2008-07-10

申请号：US11784284

申请日：2007-04-06

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: H01L29/00 ,  C09K13/08

CPC classification number: C09K13/08 ,  H01L27/10852 ,  H01L28/91

Abstract: An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.

Abstract translation: 用于防止倾斜电容器的蚀刻组合物包含氢氟酸（HF），氟化铵（NH 4 F F），烷基氟化铵（R 3 N 3 N 3） F;其中R e是C 1 -C 10直链或支链烷基），表面活性剂，醇化合物 ，和水。 该组合物可以有效地抑制在形成电容器期间电容器的倾斜现象，从而可以确保电容器的存储节点的高度，并且可以制造具有改善的电容的电容器，并且该工艺可以适应于两者的生产 现在和未来的设备。

公开(公告)号：US20080138747A1

公开(公告)日：2008-06-12

申请号：US11935184

申请日：2007-11-05

Applicant: Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

Inventor： Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

IPC: G03F7/30

CPC classification number: G03F7/322 ,  C11D1/004 ,  C11D11/0047

Abstract: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.

Abstract translation: 本文公开了当形成光致抗蚀剂图案时在显影步骤的最后步骤中用于清洁半导体衬底的光致抗蚀剂清洁溶液。 本文还公开了使用该溶液形成光致抗蚀剂图案的方法。 本发明的清洗溶液包括作为主要组分的H 2 O 2，作为添加剂的表面活性剂和任选的醇化合物。 本发明的清洗液比常规清洗液使用的蒸馏水具有更低的表面张力，从而提高了图案的崩溃性和稳定光刻胶图形的形成。

公开(公告)号：US20080083920A1

公开(公告)日：2008-04-10

申请号：US11672686

申请日：2007-02-08

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: H01L51/00 ,  C07D251/30

CPC classification number: C07D251/30 ,  H01L28/91

Abstract: A method for manufacturing a capacitor of a semiconductor device by using a composition to prevent leaning of a capacitor. The method includes forming a barrier film and a capacitor oxide film over a semiconductor substrate including an interlayer insulation film with contact plugs for storage nodes; etching the capacitor oxide film and the barrier film until the contact plugs are exposed to form trenches for capacitors; forming lower electrodes for the storage nodes in the trenches; coating the composition over the lower electrodes and baking the composition to form a polymer layer connecting the upper portions of the lower electrodes; performing the wet-dip out process on the resulting structure to remove the capacitor oxide film; and performing an O2 dry etching process to remove the polymer layer.

Abstract translation: 一种通过使用防止电容器倾斜的组合物来制造半导体器件的电容器的方法。 该方法包括在包括具有用于存储节点的接触插塞的层间绝缘膜的半导体衬底上形成阻挡膜和电容器氧化膜; 蚀刻电容器氧化膜和阻挡膜，直到接触塞暴露以形成用于电容器的沟槽; 形成用于沟槽中的存储节点的下电极; 将组合物涂覆在下电极上并烘烤组合物以形成连接下电极的上部的聚合物层; 对所得结构进行浸湿处理以除去电容器氧化膜; 并进行O 2 O 2干蚀刻工艺以除去聚合物层。

公开(公告)号：US07022458B2

公开(公告)日：2006-04-04

申请号：US10719905

申请日：2003-11-21

Applicant: Geun Su Lee ,  Cheol Kyu Bok ,  Seung Chan Moon ,  Ki Soo Shin ,  Jae Hyun Kim ,  Jung Woo Kim ,  Sang Hyang Lee ,  Jae Hyun Kang

Inventor： Geun Su Lee ,  Cheol Kyu Bok ,  Seung Chan Moon ,  Ki Soo Shin ,  Jae Hyun Kim ,  Jung Woo Kim ,  Sang Hyang Lee ,  Jae Hyun Kang

IPC: G03F7/004 ,  C08F10/00

CPC classification number: G03F7/0046 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/108

Abstract: Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, X3, R1, R2, R3, R4, R5, m, n, o, a, b, c, d and e are as defined in the description.

Abstract translation: 公开了光致抗蚀剂聚合物和光致抗蚀剂组合物。 由式1表示的光致抗蚀剂聚合物和含有它的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且对显影液具有高亲和性，从而提高LER（线边缘粗糙度）。 其中X 1，X 2，X 3，R 1，R 2， R 3，R 4，R 5，m，n，o，a，b，c，d和e定义如 说明。

公开(公告)号：US20050109992A1

公开(公告)日：2005-05-26

申请号：US10996636

申请日：2004-11-23

Applicant: Won Lee ,  Geun-Su Lee ,  Sam Kim

Inventor： Won Lee ,  Geun-Su Lee ,  Sam Kim

IPC: G03F7/32 ,  G03C5/00 ,  G03F7/16 ,  G03F7/38

CPC classification number: G03F7/38 ,  G03F7/168

Abstract: Disclosed are photoresist cleaning solutions, which are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. Methods for forming patterns using the same are also disclosed. The cleaning solutions include H2O and a nonionic surfactant compound represented by Formula 1. By spraying the disclosed cleaning solutions on a surface of the semiconductor substrate before or after exposing step to form a photoresist pattern, the desired pattern only is obtained and unnecessary patterns generated in undesired regions by ghost images are avoided as excess acid generated by the photoacid generator is neutralized and removed and damage to unexposed portions of the photoresist polymer is avoided. wherein R1 and R2 are independently H, C1-C20 alkyl, C5-C25 alkyl aryl or C1-C10 ester; m is 1 or 2; n is an integer ranging from 10 to 300; and o is 0 or 1.

Abstract translation: 公开了光致抗蚀剂清洁溶液，其在形成光致抗蚀剂图案时用于在暴露步骤之前或之后清洁半导体衬底。 还公开了使用其形成图案的方法。 清洗溶液包括H 2 O 2和由式1表示的非离子表面活性剂化合物。通过在暴露步骤之前或之后将所公开的清洁溶液喷涂在半导体衬底的表面上以形成光致抗蚀剂图案，所需的 避免了图案，并且避免了由不想要的区域产生的重影图像产生的不必要的图案，因为光致酸发生器产生的过量酸被中和和去除，并且避免了光致抗蚀剂聚合物的未曝光部分的损坏。 其中R 1和R 2独立地为H，C 1 -C 20烷基，C 5 烷基芳基或C 1 -C 10烷基酯; C 1 -C 15烷基芳基或C 1 -C 10烷基酯; m为1或2; n为10〜300的整数。 o为0或1。

公开(公告)号：US06806025B2

公开(公告)日：2004-10-19

申请号：US10079348

申请日：2002-02-20

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03F7004

CPC classification number: C07D493/08 ,  C07C17/30 ,  C07D495/08 ,  G03F7/0046 ,  G03F7/0395 ,  Y02P20/55 ,  C07C23/18

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, X1, X2, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, l and m are as defined in the specification of the invention.

Abstract translation: 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和对晶片的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在157nm波长处具有低吸光度，因此适用于在制造用于高集成半导体器件的微小电路中使用诸如VUV（157nm）的紫外光源的光刻工艺。其中，X1， X2，Y1，Y2，Y3，Y4，Y5，Y6，Y7，Y8，I和m如本发明的说明书中所定义。

公开(公告)号：US06770415B2

公开(公告)日：2004-08-03

申请号：US09884313

申请日：2001-06-19

Applicant: Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7038

CPC classification number: G03F7/265 ,  C08F8/00 ,  C08F8/14 ,  C08F222/06 ,  C08F232/00 ,  C08F232/04 ,  C08F232/08 ,  G03F7/0395 ,  G03F7/38 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  C08F2220/281 ,  C08F220/06 ,  C08F222/14 ,  C08F222/1006

Abstract: A photoresist polymer for a top-surface imaging process by silylation (TIPS), and a photoresist composition comprising the same. The protecting group of the present photoresist polymer is selectively protected in an exposed region, and thus a hydroxyl group is generated. The hydroxyl group reacts with the silylation agent to cause a silylation process. Accordingly, when the photoresist film is dry-developed, the exposed region only remains to form a negative pattern. In addition, the present photoresist composition has excellent adhesiveness to a substrate, thus preventing a pattern collapse in forming a minute pattern. As a result, the present photoresist composition is suitable for a lithography process using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm).

Abstract translation: 用于通过甲硅烷基化（TIPS）的顶表面成像方法的光致抗蚀剂聚合物和包含该光致抗蚀剂的光致抗蚀剂组合物。 本发明的光致抗蚀剂聚合物的保护基被选择性地保护在暴露区域中，因此产生羟基。 羟基与甲硅烷基化剂反应以引起甲硅烷基化过程。 因此，当干涉显影光致抗蚀剂膜时，曝光区域仅保留以形成负图形。 此外，本发明的光致抗蚀剂组合物对基材的粘附性优异，从而防止形成微小图案的图案塌陷。 结果，本光致抗蚀剂组合物适用于使用诸如ArF（193nm），VUV（157nm）和EUV（13nm）的光源的光刻工艺。

公开(公告)号：US06720129B2

公开(公告)日：2004-04-13

申请号：US10107659

申请日：2002-03-27

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03P7004

CPC classification number: G03F7/0046 ,  G03F7/0397 ,  Y10S430/108

Abstract: Photoresist polymers, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers containing maleimide represented by Formula 1. Photoresist compositions including the photoresist polymers have excellent etching resistance, heat resistance and adhesiveness, and development ability in aqueous tetramethylammonium hydroxide (TMAH) solution. As the compositions have low light absorbance at 193 nm and 157 nm wavelength, they are suitable for a process using ultraviolet light source such as VUV (157 nm). wherein, 1, R1, R2, R3, R, R′, R″, R″′, X, a and b are defined in the specification.

Abstract translation: 公开了使用聚合物的光致抗蚀剂聚合物和光致抗蚀剂组合物。 更具体地，含有由式1表示的马来酰亚胺的光致抗蚀剂聚合物。包含光致抗蚀剂聚合物的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性以及四甲基氢氧化铵（TMAH）水溶液的显影能力。 由于组合物在193nm和157nm波长处具有低吸光度，它们适用于使用诸如VUV（157nm）的紫外光源的方法，其中1，R1，R2，R3，R，R'，R' '，R“'，X，a和b在说明书中定义。

公开(公告)号：US06699644B1

公开(公告)日：2004-03-02

申请号：US09651443

申请日：2000-08-30

Applicant: Geun Su Lee ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F700

CPC classification number: G03F7/091 ,  G03F7/0395 ,  G03F7/168 ,  Y10S430/151

Abstract: The present invention provides a method for reducing or eliminating a poor pattern formation on a photoresist film by contacting the photoresist film with an alkaline solution prior to its exposure to light. Methods of the present invention significantly reduce or prevent T-topping and top-loss.

Abstract translation: 本发明提供一种减少或消除在光致抗蚀剂膜上形成不良图案的方法，其通过在曝光之前使光致抗蚀剂膜与碱性溶液接触。 本发明的方法显着地减少或防止T顶部和顶部损失。

公开(公告)号：US06692891B2

公开(公告)日：2004-02-17

申请号：US09879325

申请日：2001-06-12

Applicant: Jae Chang Jung ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7038

CPC classification number: G03F7/0045 ,  G03F7/0395 ,  Y10S430/115 ,  Y10S430/117 ,  Y10S430/122 ,  Y10S430/124 ,  Y10S430/126

Abstract: The present invention relates to a photoresist composition containing a photo radical generator, more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) a photoacid generator, (c) an organic solvent and (d) a photo radical generator. The present photoresist composition reduces or prevents a sloping pattern formation due to a higher concentration of acid in the upper portion of the photoresist relative to the lower portion of the photoresist.

Abstract translation: 本发明涉及含有光自由基发生剂的光致抗蚀剂组合物，更具体地说，涉及光致抗蚀剂组合物，其包含（a）光致抗蚀剂树脂，（b）光酸产生剂，（c）有机溶剂和（d）光自由基发生剂 。 由于光致抗蚀剂上部相对于光致抗蚀剂的下部较高浓度的酸，本发明的光致抗蚀剂组合物减少或防止形成倾斜图案。