公开(公告)号：US20110133306A1

公开(公告)日：2011-06-09

申请号：US12788542

申请日：2010-05-27

Applicant: In Gyoo KIM ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

Inventor： In Gyoo KIM ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L21/7624 ,  H01L21/76243 ,  H01L21/76264 ,  H01L29/0657

Abstract: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.

Abstract translation: 提供半导体器件及其形成方法。 根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案 埋入氧化物层以暴露第一掩埋氧化物层。 一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。 此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。 形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

公开(公告)号：US07928442B2

公开(公告)日：2011-04-19

申请号：US12441381

申请日：2007-08-17

Applicant: Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

Inventor： Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

IPC: H01L31/036

CPC classification number: G02F1/025 ,  G02F1/2257 ,  H01L33/0037

Abstract: Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

Abstract translation: 提供了具有应变埋入通道区域的光学装置。 该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

公开(公告)号：US20100044828A1

公开(公告)日：2010-02-25

申请号：US12441377

申请日：2007-04-03

Applicant: Dongwoo Suh ,  Gyungock Kim

Inventor： Dongwoo Suh ,  Gyungock Kim

IPC: H01L29/06

CPC classification number: H01L27/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.

Abstract translation: 提供了一种单片集成复合器件，包括：分隔成硅集成电路形成区域的硅衬底和硅光学器件形成区域; 在硅光学器件形成区域的硅衬底中局部形成的掩埋氧化物层，并隔离硅光学器件形成区域的单元器件; 在掩埋氧化物层上局部形成的覆盖层; 使用所述硅覆盖层形成在所述硅光学器件形成区域中的硅光学器件; 形成在硅衬底的硅集成电路形成区域中的硅集成电路; 以及连接硅集成电路和硅光学器件或连接硅光学器件或连接硅集成电路的布线。

公开(公告)号：US20090154871A1

公开(公告)日：2009-06-18

申请号：US12117708

申请日：2008-05-08

Applicant: Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

Inventor： Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

IPC: G02B6/12 ,  H01L21/02

CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

公开(公告)号：US20080151956A1

公开(公告)日：2008-06-26

申请号：US11952408

申请日：2007-12-07

Applicant: Gyungock KIM ,  In Gyoo KIM ,  Junghyung PYO ,  Ki Seok CHANG

Inventor： Gyungock KIM ,  In Gyoo KIM ,  Junghyung PYO ,  Ki Seok CHANG

IPC: H01S5/323

CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3419 ,  H01S5/3422 ,  H01S5/34306

Abstract: An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate, and a first cladding layer, an active region structure layer and a second cladding layer formed on the semiconductor substrate. The active region structure layer includes quantum well layers and quantum barrier layers that are alternately stacked and have a broken energy bandgap. Thus, the interband resonant tunneling intersubband transition laser operates in a cascade mode in which an intersubband radiative transition and interband tunneling of carriers consecutively and repetitively occur in the active region structure layer, and thus can achieve a high output from a simple, compact structure.

Abstract translation: 公开了一种带间谐振隧穿带间过渡激光器，并且包括半导体衬底和形成在半导体衬底上的第一覆层，有源区结构层和第二覆层。 有源区结构层包括量子阱层和量子势垒层，其交替堆叠并具有破坏的能带隙。 因此，带间共振隧穿带间过渡激光器以级联模式工作，其中载流子系统中的子带间辐射跃迁和带间隧穿在连续重复地发生在有源区结构层中，从而可以通过简单紧凑的结构实现高输出。

公开(公告)号：US20080037936A1

公开(公告)日：2008-02-14

申请号：US11828418

申请日：2007-07-26

Applicant: Jong Moo LEE ,  Duk Jun KIM ,  Junghyung PYO ,  Gyungock KIM

Inventor： Jong Moo LEE ,  Duk Jun KIM ,  Junghyung PYO ,  Gyungock KIM

IPC: G02B6/10 ,  G02B6/34

CPC classification number: G02B6/12028 ,  G02B6/12011

Abstract: Provided is a silicon array waveguide grating (AWG) device comprising a silicon array waveguide in which a plurality of optical waveguides formed of a lower cladding layer, a silicon core, and an upper cladding layer are arranged, wherein the variation of the refractive index of the silicon core is positive, and the upper cladding layer is formed of polymer, the variation of refractive index of which according to temperature is negative, which is opposite to the silicon core, and the cross-section of the silicon core varies between different areas to adjust the variation of the effective refractive index of the optical waveguide according to temperature.

Abstract translation: 提供了一种硅阵列波导光栅（AWG）器件，其包括硅阵列波导，其中布置由下包层，硅芯和上包层形成的多个光波导，其中折射率的变化 硅芯是正的，并且上包层由聚合物形成，其折射率随着温度的变化是负的，其与硅芯相反，并且硅芯的横截面在不同的区域之间变化 以根据温度调节光波导的有效折射率的变化。

公开(公告)号：US08928107B2

公开(公告)日：2015-01-06

申请号：US13284818

申请日：2011-10-28

Applicant: Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/06 ,  H01L31/102 ,  H01L31/18

CPC classification number: H01L31/102 ,  H01L31/18

Abstract: Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.

Abstract translation: 提供了光检测装置及其制造方法。 光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有 设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。

公开(公告)号：US08823121B2

公开(公告)日：2014-09-02

申请号：US13550364

申请日：2012-07-16

Applicant: Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

Inventor： Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

IPC: H01L31/00 ,  G02B6/12 ,  H01L31/0352 ,  G02B6/13 ,  G02B6/136

CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

公开(公告)号：US08698271B2

公开(公告)日：2014-04-15

申请号：US12404275

申请日：2009-03-13

Applicant: Dongwoo Suh ,  Sang Hoon Kim ,  Gyungock Kim ,  JiHo Joo

Inventor： Dongwoo Suh ,  Sang Hoon Kim ,  Gyungock Kim ,  JiHo Joo

IPC: H01L33/00 ,  H01L21/20

CPC classification number: H01L31/028 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.

Abstract translation: 提供了具有不使用缓冲层形成的锗外延层的锗光电检测器及其制造方法。 在该方法中，在基板上形成无定形锗层。 将非晶锗层加热至高温以形成结晶的锗层。 在结晶的锗层上形成锗外延层。

公开(公告)号：US08394705B2

公开(公告)日：2013-03-12

申请号：US12783216

申请日：2010-05-19

Applicant: In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

Inventor： In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

IPC: H01L21/76

CPC classification number: G02B6/136 ,  G02B6/132 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2203/15 ,  H01L27/1203

Abstract: Provided is a method of manufacturing a semiconductor device. According to the method, a first buried oxide layer is formed in the semiconductor substrate in a first region, such that a first semiconductor layer is defined on the first buried oxide layer. An active portion is defined by forming a trench in the semiconductor substrate in a second region. A capping semiconductor pattern is formed on a top surface and an upper portion of a sidewall of the active portion. An oxide layer is formed by oxidizing the capping semiconductor pattern and an exposed lower portion of the sidewall of the active portion, such that the oxide layer surrounds a non-oxidized portion of the active portion. The non-oxidized portion of the active portion is a core and one end of the core is connected to a first optical device formed at the first semiconductor.

Abstract translation: 提供一种制造半导体器件的方法。 根据该方法，在第一区域中的半导体衬底中形成第一掩埋氧化物层，使得第一半导体层被限定在第一掩埋氧化物层上。 通过在第二区域中在半导体衬底中形成沟槽来限定有源部分。 在有源部分的侧壁的顶表面和上部形成封盖半导体图案。 通过氧化覆盖半导体图案和有源部分的侧壁的暴露下部来形成氧化物层，使得氧化物层包围有源部分的未氧化部分。 有源部分的未氧化部分是芯，并且芯的一端连接到形成在第一半导体处的第一光学器件。