公开(公告)号：US08548281B2

公开(公告)日：2013-10-01

申请号：US12872881

申请日：2010-08-31

Applicant: Gyungock Kim ,  Jeong Woo Park ,  Jongbum You ,  Sang Gi Kim ,  Sanghoon Kim ,  In Gyoo Kim ,  Jiho Joo ,  Duk Jun Kim ,  Dongwoo Suh ,  Sahnggi Park ,  Ki Seok Jang ,  Junghyung Pyo ,  Kap-Joong Kim ,  Do Won Kim ,  Dae Seo Park

Inventor： Gyungock Kim ,  Jeong Woo Park ,  Jongbum You ,  Sang Gi Kim ,  Sanghoon Kim ,  In Gyoo Kim ,  Jiho Joo ,  Duk Jun Kim ,  Dongwoo Suh ,  Sahnggi Park ,  Ki Seok Jang ,  Junghyung Pyo ,  Kap-Joong Kim ,  Do Won Kim ,  Dae Seo Park

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2201/063

Abstract: Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.

Abstract translation: 提供了一种电光调制装置。 电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。

公开(公告)号：US20100044828A1

公开(公告)日：2010-02-25

申请号：US12441377

申请日：2007-04-03

Applicant: Dongwoo Suh ,  Gyungock Kim

Inventor： Dongwoo Suh ,  Gyungock Kim

IPC: H01L29/06

CPC classification number: H01L27/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.

Abstract translation: 提供了一种单片集成复合器件，包括：分隔成硅集成电路形成区域的硅衬底和硅光学器件形成区域; 在硅光学器件形成区域的硅衬底中局部形成的掩埋氧化物层，并隔离硅光学器件形成区域的单元器件; 在掩埋氧化物层上局部形成的覆盖层; 使用所述硅覆盖层形成在所述硅光学器件形成区域中的硅光学器件; 形成在硅衬底的硅集成电路形成区域中的硅集成电路; 以及连接硅集成电路和硅光学器件或连接硅光学器件或连接硅集成电路的布线。

公开(公告)号：US20110133187A1

公开(公告)日：2011-06-09

申请号：US12765705

申请日：2010-04-22

Applicant: Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

Inventor： Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

IPC: H01L31/0256 ,  H01L31/18 ,  H01L31/0232

CPC classification number: G02B6/12004 ,  G02B2006/12176 ,  G02B2006/12188 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1812 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening by etching the insulation layer to expose the top surface of the optical waveguide; forming a second single crystal semiconductor layer from the top surface of the exposed optical waveguide, in the opening; and selectively forming a poly semiconductor layer from the top surface of the second single crystal semiconductor layer, the poly semiconductor layer being doped with dopants.

Abstract translation: 提供了一种光电检测器的制造方法。 该方法包括：形成从第一单晶半导体层突出的第一单晶半导体层和光波​​导; 在所述第一单晶半导体层上形成绝缘层以覆盖所述光波导; 通过蚀刻绝缘层来形成开口以暴露光波导的顶表面; 在所述开口中从所述暴露的光波导的顶表面形成第二单晶半导体层; 以及从所述第二单晶半导体层的顶表面选择性地形成多晶半导体层，所述多晶半导体层掺杂有掺杂剂。

公开(公告)号：US07915700B2

公开(公告)日：2011-03-29

申请号：US12441377

申请日：2007-04-03

Applicant: Dongwoo Suh ,  Gyungock Kim

Inventor： Dongwoo Suh ,  Gyungock Kim

IPC: H01L31/0232 ,  H01L23/58

CPC classification number: H01L27/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.

Abstract translation: 提供了一种单片集成复合器件，包括：分隔成硅集成电路形成区域的硅衬底和硅光学器件形成区域; 在硅光学器件形成区域的硅衬底中局部形成的掩埋氧化物层，并隔离硅光学器件形成区域的单元器件; 在掩埋氧化物层上局部形成的覆盖层; 使用所述硅覆盖层形成在所述硅光学器件形成区域中的硅光学器件; 形成在硅衬底的硅集成电路形成区域中的硅集成电路; 以及连接硅集成电路和硅光学器件或连接硅光学器件或连接硅集成电路的布线。

公开(公告)号：US20110049660A1

公开(公告)日：2011-03-03

申请号：US12763990

申请日：2010-04-20

Applicant: Dongwoo SUH ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

Inventor： Dongwoo SUH ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

IPC: H01L31/0232

CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

公开(公告)号：US08823121B2

公开(公告)日：2014-09-02

申请号：US13550364

申请日：2012-07-16

Applicant: Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

Inventor： Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

IPC: H01L31/00 ,  G02B6/12 ,  H01L31/0352 ,  G02B6/13 ,  G02B6/136

CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

公开(公告)号：US08698271B2

公开(公告)日：2014-04-15

申请号：US12404275

申请日：2009-03-13

Applicant: Dongwoo Suh ,  Sang Hoon Kim ,  Gyungock Kim ,  JiHo Joo

Inventor： Dongwoo Suh ,  Sang Hoon Kim ,  Gyungock Kim ,  JiHo Joo

IPC: H01L33/00 ,  H01L21/20

CPC classification number: H01L31/028 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.

Abstract translation: 提供了具有不使用缓冲层形成的锗外延层的锗光电检测器及其制造方法。 在该方法中，在基板上形成无定形锗层。 将非晶锗层加热至高温以形成结晶的锗层。 在结晶的锗层上形成锗外延层。

公开(公告)号：US08242571B2

公开(公告)日：2012-08-14

申请号：US12763990

申请日：2010-04-20

Applicant: Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

Inventor： Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

IPC: H01L31/0232 ,  G02B6/42

CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

公开(公告)号：US08859319B2

公开(公告)日：2014-10-14

申请号：US13612736

申请日：2012-09-12

Applicant: Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  G02B6/12004 ,  G02B6/131 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1037 ,  H01L31/109 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Abstract translation: 提供了形成光电检测器的方法。 该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶 层和半导体层以形成第一单晶图案，第二单晶图案和光波导。

公开(公告)号：US08615149B2

公开(公告)日：2013-12-24

申请号：US13190403

申请日：2011-07-25

Applicant: Do Won Kim ,  Gyungock Kim ,  JunYeong Lee

Inventor： Do Won Kim ,  Gyungock Kim ,  JunYeong Lee

IPC: G02B6/00 ,  G02B6/12 ,  G02B6/36 ,  H01R43/16

CPC classification number: G02B6/4292 ,  G02B6/3644 ,  G02B6/3652 ,  G02B6/3885

Abstract: Provided are a photonics chip and an optical apparatus including the same. The chip may include a substrate, an optical waveguide, an optical coupler, and a plurality of alignment units. The optical waveguide is formed on the substrate. The optical coupler is formed at the optical waveguide. The alignment units align an optical connector which fixes at least one optical fiber coupled to the optical coupler, on the substrate.

Abstract translation: 提供了一种光子学芯片和包括其的光学装置。 芯片可以包括基板，光波导，光耦合器和多个对准单元。 光波导形成在基板上。 光耦合器形成在光波导处。 对准单元对准在衬底上固定耦合到光耦合器的至少一个光纤的光连接器。