Abstract:
An injection mold includes a first mold part provided with a first mold surface and a second mold part provided with a second mold surface to form a cavity together with the first mold surface. Cooling channels along which a cooling fluid flows are provided in at least one of the first mold part and the second mold part, and a heat generating layer which receives power and then generates heat is disposed on the inner surfaces of the cooling channels and serves as a heater.
Abstract:
A voltage generator for a peripheral circuit, the voltage generator includes: a voltage supplier supplying a peripheral circuit voltage having a voltage level maintained at a reference voltage level, the peripheral circuit voltage outputted in response to a driving signal; and a voltage level compensator increasing the voltage level of the peripheral circuit voltage in response to a column path command.
Abstract:
Embodiments of the invention provide a cellulose-sheathed carbon nanotube fiber. One aspect of the invention provides a sheathed nanotube fiber comprising: a carbon nanotube fiber; and a cellulose sheath extending co-axially along at least a first portion of a length of the carbon nanotube fiber. Another aspect of the invention provides a method of forming a sheathed carbon nanotube fiber, the method comprising: co-electrospinning a carbon nanotube fiber gel core within a cellulose solution sheath.
Abstract:
A semiconductor memory device is provided that is capable of reading out mode register information stored in a register adapted for LPDDR2 (Low Power DDR2), through DQ pads. The semiconductor memory device includes a mode register control unit configured to receive address signals, a mode register write signal and a mode register read signal and generate a flag signal and at least one output information signal, and a global I/O line latch unit for transferring the output information signal to a global I/O line in response to the flag signal.
Abstract:
A reservoir capacitor array circuit capable of allowing an internal voltage to be maintained stably, comprises a plurality of reservoir capacitors, each of the reservoir capacitors including a switch element which is connected between a power source voltage and a prescribed node and switched in response to a test enable signal which is enabled depending on a test mode signal or whether the fuse is cut or not, and a capacitor connected between the node and a ground voltage.
Abstract:
A cathode active material, a cathode including the cathode active material, and a lithium battery including the cathode. A lithium manganese phosphate cathode active material having an olivine structure represented by LixMn1−y−zM′yM″zPO4, where 0.6≦x≦1.0, 0
Abstract:
Disclosed is a method of fabricating a semiconductor device including a multi-gate transistor. The method of fabricating a semiconductor device includes providing a semiconductor device having a number of active patterns which extend in a first direction, are separated by an isolation layer, and covered with a first insulating layer; forming a first groove by etching the isolation layer located between the active patterns adjacent to each other in the first direction; burying the first groove with a passivation layer; forming a second groove exposing at least a portion of both sides of the active patterns by etching the isolation layer located between the active patterns in a second direction intersecting the first direction; removing the passivation layer in the first groove; and forming a gate line filling at least a portion of the second groove and extending in the second direction.
Abstract:
A source control circuit comprises a control signal generating unit for generating a standby signal which is enabled in a standby condition, and a switching unit connected between a power line for supplying power to an internal circuit and an external power and controlling the supply of the external power in response to the standby signal.
Abstract:
In methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device, a preliminary ferroelectric layer is formed on a substrate by depositing a metal oxide including lead, zirconium and titanium. The surface of the preliminary ferroelectric layer is polished using a slurry composition including an acrylic acid polymer, abrasive particles, and water to form a thin ferroelectric layer on the substrate. The slurry composition may reduce a polishing rate of the preliminary ferroelectric layer such that removal of a bulk portion of the preliminary ferroelectric layer may be suppressed and the surface roughness of the preliminary ferroelectric layer may be improved.
Abstract:
A variable valve actuator presses rocker arms using force transmitted from a drive cam to open/close valves of an engine, and includes a swing arm, which is pivotably coupled to the engine on a first side thereof, and at least two pressing means, which come into contact with the rocker arms on first sides thereof, are pivotably coupled to a second side of a swing arm on second sides thereof, and press the rocker arms when pressed by the drive cam. Thereby, the variable valve actuator can adjust a lift time and a lift distance of each valve without changing positions of the drive cams and the camshaft, and more easily adjust the lift time of each valve, and have very excellent applicability to the engine due to simple internal configuration.