公开(公告)号：US09673258B2

公开(公告)日：2017-06-06

申请号：US14466395

申请日：2014-08-22

Applicant: Kyo Jin Choo ,  Hirosige Goto ,  Kyu Sik Kim ,  Yun Kyung Kim ,  Kyung Bae Park ,  Jin Ho Seo ,  Sang Chul Sul ,  Kyung Ho Lee ,  Kwang-hee Lee

Inventor： Kyo Jin Choo ,  Hirosige Goto ,  Kyu Sik Kim ,  Yun Kyung Kim ,  Kyung Bae Park ,  Jin Ho Seo ,  Sang Chul Sul ,  Kyung Ho Lee ,  Kwang-hee Lee

IPC: H04N3/14 ,  H01L27/30 ,  H04N5/378 ,  H01L51/42 ,  H04N5/369 ,  H04N5/335 ,  H04N5/3745

CPC classification number: H01L27/307 ,  H01L51/424 ,  H04N5/3698 ,  H04N5/37452 ,  H04N5/378

Abstract: Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

公开(公告)号：US08885065B2

公开(公告)日：2014-11-11

申请号：US13151794

申请日：2011-06-02

Applicant: Kyung-ho Lee ,  Jung-chak Ahn ,  Sang-joo Lee ,  Young-hwan Park ,  Dong-yoon Jang ,  Young-heub Jang

Inventor： Kyung-ho Lee ,  Jung-chak Ahn ,  Sang-joo Lee ,  Young-hwan Park ,  Dong-yoon Jang ,  Young-heub Jang

IPC: H04N5/76 ,  H04N5/361 ,  H04N5/359

CPC classification number: H04N5/361 ,  H04N5/359 ,  H04N5/3594

Abstract: A light leakage compensating unit image sensor in a back side illumination method includes a photodiode and a storage diode, in which light input to a back side of the unit image sensor is received only by an area forming an electrode of the photodiode, and an area for forming another electrode of the photodiode and an area for forming two electrodes of the storage diode are separated from each other by a well, thereby compensating light leakage.

Abstract translation: 背面照明方式的漏光补偿单元图像传感器包括：光电二极管和存储二极管，其中仅通过形成光电二极管的电极的区域仅接收单元图像传感器背面的光，以及区域 用于形成光电二极管的另一个电极和用于形成存储二极管的两个电极的区域由阱彼此分离，从而补偿光泄漏。

公开(公告)号：US08853705B2

公开(公告)日：2014-10-07

申请号：US13286786

申请日：2011-11-01

Applicant: Kyung Ho Lee ,  Jung Chak Ahn

Inventor： Kyung Ho Lee ,  Jung Chak Ahn

IPC: H01L29/00 ,  H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14687

Abstract: An image sensor including a deep guard ring and a noise blocking area and a method of manufacturing the same. The image sensor includes the deep guard ring and a deep P well surrounding the noise blocking area, thereby preventing crosstalk between adjacent pixels. In addition, an ion implantation layer is divided by the noise blocking area, so that substrate crosstalk is effectively eliminated.

Abstract translation: 包括深保护环和噪声阻挡区域的图像传感器及其制造方法。 图像传感器包括深保护环和围绕噪声阻挡区域的深P阱，从而防止相邻像素之间的串扰。 此外，离子注入层被噪声阻挡区域分割，从而有效地消除了衬底串扰。

公开(公告)号：US20140021542A1

公开(公告)日：2014-01-23

申请号：US13957103

申请日：2013-08-01

Applicant: Jae-Han CHA ,  Kyung-Ho LEE ,  Sun-Goo KIM ,  Hyung-Suk CHOI ,  Ju-Ho KIM ,  Jin-Young Chae ,  In-Taek OH

Inventor： Jae-Han CHA ,  Kyung-Ho LEE ,  Sun-Goo KIM ,  Hyung-Suk CHOI ,  Ju-Ho KIM ,  Jin-Young Chae ,  In-Taek OH

IPC: H01L29/78

CPC classification number: H01L29/7816 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66681

Abstract: A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.

公开(公告)号：US08546883B2

公开(公告)日：2013-10-01

申请号：US12835523

申请日：2010-07-13

Applicant: Jae-Han Cha ,  Kyung-Ho Lee ,  Sun-Goo Kim ,  Hyung-Suk Choi ,  Ju-Ho Kim ,  Jin-Young Chae ,  In-Taek Oh

Inventor： Jae-Han Cha ,  Kyung-Ho Lee ,  Sun-Goo Kim ,  Hyung-Suk Choi ,  Ju-Ho Kim ,  Jin-Young Chae ,  In-Taek Oh

IPC: H01L29/66

CPC classification number: H01L29/7816 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66681

Abstract: A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.

Abstract translation: 半导体器件包括在衬底上方构造的第二导电类型深阱。 深阱包括离子注入区域和扩散区域。 在扩散区域中形成第一导电型第一阱。 栅电极延伸在离子注入区域和扩散区域的部分上，并且部分地与第一阱重叠。 离子注入区域具有均匀的杂质浓度，而扩散区域的杂质浓度从在离子注入区域和扩散区域之间的边界界面处的最高浓度变为在扩散区域的部分处的最低浓度 距离边界界面最远。

公开(公告)号：US08546881B2

公开(公告)日：2013-10-01

申请号：US12875021

申请日：2010-09-02

Applicant: Jae-Han Cha ,  Kyung-Ho Lee ,  Sun-Goo Kim ,  Hyung-Suk Choi ,  Ju-Ho Kim ,  Jin-Young Chae ,  In-Taek Oh

Inventor： Jae-Han Cha ,  Kyung-Ho Lee ,  Sun-Goo Kim ,  Hyung-Suk Choi ,  Ju-Ho Kim ,  Jin-Young Chae ,  In-Taek Oh

IPC: H01L29/66

CPC classification number: H01L29/7835 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/7816

Abstract: A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode.

公开(公告)号：US08508013B2

公开(公告)日：2013-08-13

申请号：US13252560

申请日：2011-10-04

Applicant: Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

Inventor： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

IPC: H01L21/00

CPC classification number: H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract translation: 提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。 背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离 通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层， 一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。

公开(公告)号：US08422115B2

公开(公告)日：2013-04-16

申请号：US12197433

申请日：2008-08-25

Applicant: Jae-Hyuk Chang ,  Seong-Sik Shin ,  Nam-Seok Roh ,  Kyung-Ho Lee ,  Jun-Bo Yoon

Inventor： Jae-Hyuk Chang ,  Seong-Sik Shin ,  Nam-Seok Roh ,  Kyung-Ho Lee ,  Jun-Bo Yoon

IPC: G02B26/00

CPC classification number: G09G3/3433 ,  G02B26/02 ,  G09G3/2011 ,  G09G3/2074 ,  G09G3/2077

Abstract: A display device is provided. The display device includes: a substrate including a unit display area, a fixing member that is formed on the substrate and that is electrically isolated, an insulating layer that is formed on the fixing member, a fixing electrode that is formed on the insulating layer and that is electrically connected to a power source, and a plurality of moving members with one end fixed to the insulating layer and positioned apart by a distance from the fixing electrode. The plurality of moving members and the fixing electrode are positioned within the unit display area.

Abstract translation: 提供显示装置。 显示装置包括：基板，包括单元显示区域，形成在基板上并且被电隔离的固定部件，形成在固定部件上的绝缘层，形成在绝缘层上的固定电极和 电连接到电源，以及多个移动构件，其一端固定到绝缘层并且与固定电极分开一定距离。 多个移动构件和固定电极位于单元显示区域内。

公开(公告)号：US08288899B2

公开(公告)日：2012-10-16

申请号：US12926568

申请日：2010-11-24

Applicant: Seok Jun Park ,  Jun Kun Choi ,  Hwa Young Oh ,  Jee Sung Lee ,  Yong Jin Kim ,  Kyung Ho Lee

Inventor： Seok Jun Park ,  Jun Kun Choi ,  Hwa Young Oh ,  Jee Sung Lee ,  Yong Jin Kim ,  Kyung Ho Lee

IPC: H02K33/00

CPC classification number: H02K33/16

Abstract: There is provided a horizontal linear vibrator including a bracket providing an internal space; a vibration unit mounted in the internal space and including a mass body moving horizontally and linearly; and a magnetic field unit including a magnet fixed to the mass body and a coil installed within a magnetic field of the magnet and generating electromagnetic force to allow the vibration unit to move horizontally and linearly, wherein the coil includes a coil line disposed between the bracket and a printed circuit board and extending outside of the internal space of the bracket such that the coil line is connected with the printed circuit board for applying power from an external source to the coil outside of the internal space of the bracket.

Abstract translation: 提供了一种包括提供内部空间的支架的水平​​线性振动器; 振动单元，其安装在所述内部空间中并且包括沿水平和线性运动的质量体; 以及磁场单元，其包括固定到所述质量体的磁体和安装在所述磁体的磁场内的线圈，并且产生电磁力以允许所述振动单元水平和线性移动，其中所述线圈包括设置在所述支架之间的线圈线 以及印刷电路板，并且延伸到支架的内部空间的外侧，使得线圈线与印刷电路板连接，用于将电力从外部源施加到支架内部空间的线圈。

公开(公告)号：US08278786B2

公开(公告)日：2012-10-02

申请号：US12752669

申请日：2010-04-01

Applicant: Ki-Suk Woo ,  Kyung-Ho Lee ,  Jun-Kun Choi ,  Yong-Jin Kim ,  Hwa-Young Oh ,  Je-Hyun Bang ,  Young-Bok Yoon ,  Suck-Jun Park ,  Kwang-Hyung Lee

Inventor： Ki-Suk Woo ,  Kyung-Ho Lee ,  Jun-Kun Choi ,  Yong-Jin Kim ,  Hwa-Young Oh ,  Je-Hyun Bang ,  Young-Bok Yoon ,  Suck-Jun Park ,  Kwang-Hyung Lee

IPC: H02K33/00

CPC classification number: H02K33/16

Abstract: A linear vibrator is disclosed. The linear vibrator in accordance with an embodiment of the present invention includes a base, a coil unit, which is coupled to the base, a magnet assembly, which forms a closed circuit of a magnetic force perpendicular to an electric current flowing through the coil unit and in which the magnet assembly relatively moves with respect to the coil unit, and an elastic member, which elastically supports the magnet assembly. Thus, a linear vibrator with an increased driving force can be provided by preventing the leakage of magnetic flux.

Abstract translation: 公开了线性振动器。 根据本发明的实施例的线性振动器包括基座，耦合到基座的线圈单元，磁体组件，其形成与流过线圈单元的电流垂直的磁力的闭合电路 并且其中磁体组件相对于线圈单元相对移动，以及弹性构件，其弹性地支撑磁体组件。 因此，可以通过防止磁通量的泄漏来提供具有增加的驱动力的线性振动器。