公开(公告)号：US20110290687A1

公开(公告)日：2011-12-01

申请号：US12881413

申请日：2010-09-14

Applicant: HSIU-PING HAN

Inventor： HSIU-PING HAN

IPC: B65D85/00

CPC classification number: A45C13/002 ,  A45C3/02 ,  A45C2011/002 ,  A45C2011/003

Abstract: An improved protective cover includes a first protective board and a second protective board coupled to each other, and foldable and unfoldable with respect to each other, and the first protective board being provided for carrying and positioning a telecom product, characterized in that the first protective board includes at least one transverse folding portion formed on a peripheral surface of the first protective board for separating the first protective board into an upper support portion and a lower support portion; and the second protective board includes at least one transverse positioning slot formed on a peripheral surface of the second protective board. Therefore, when the second protective board is folded and buckled to the first protective board, the telecom product placed on the first protective board is protected. When the second protective board is unfolded, and the lower support portion of the first protective board is not fixed to the telecom product, the first protective board can be bent by the folding portion while being lifted, such that a lower end of the telecom product is moved outward and fixed to any one of the positioning slots of the second protective board, and the lower support portion of the bent second protective board constitute a support to the telecom product, and thus the telecom product can be disposed at a specific angle for its operation and viewing.

Abstract translation: 一种改进的保护盖包括彼此联接的第一保护板和第二保护板，并且相对于彼此可折叠和可折叠，并且第一保护板被设置用于承载和定位电信产品，其特征在于，第一保护 至少一个横向折叠部分，形成在第一保护板的周面上，用于将第一保护板分离成上支撑部分和下支撑部分; 并且第二保护板包括形成在第二保护板的外周表面上的至少一个横向定位槽。 因此，当第二保护板折叠并弯曲到第一保护板时，放置在第一保护板上的电信产品被保护。 当第二保护板展开时，第一保护板的下支撑部分不固定到电信产品上，第一保护板可以被提升时的折叠部分弯曲，使得电信产品的下端 向外移动并固定到第二保护板的任何一个定位槽，并且弯曲的第二保护板的下支撑部分构成对电信产品的支撑，因此电信产品可以以特定角度设置 其操作和查看。

公开(公告)号：US20110176314A1

公开(公告)日：2011-07-21

申请号：US13075383

申请日：2011-03-30

Applicant: Ping-Han Chuang

Inventor： Ping-Han Chuang

IPC: F21V7/00

CPC classification number: F21S6/005 ,  F21S8/08 ,  F21V5/02 ,  F21V7/0008 ,  F21V7/0025 ,  F21V7/0091 ,  F24S23/10 ,  G02B17/08 ,  G02B19/0028 ,  G02B19/0047 ,  G02B19/0052

Abstract: A shaped optical prism structure for mounting on an upward light-outgoing surface of a street light or wall lamp to change the direction of light through about 360 o by means of a recessed flat incident surface, a recessed primary full-reflection surface and a curved light-distribution surface formed of a series of sloping surfaces and to enable the light to be projected onto the floor.

Abstract translation: 一种形状的光学棱镜结构，用于安装在路灯或壁灯的向上的光出射表面上，以通过凹入的平坦入射表面，凹入的初级全反射表面和弯曲的 光分布表面由一系列倾斜表面形成，并使光能够投射到地板上。

公开(公告)号：US20110175148A1

公开(公告)日：2011-07-21

申请号：US13074888

申请日：2011-03-29

Applicant: Jiang Yan ,  Roland Hampp ,  Jin-Ping Han ,  Manfred Eller ,  Alois Gutmann

Inventor： Jiang Yan ,  Roland Hampp ,  Jin-Ping Han ,  Manfred Eller ,  Alois Gutmann

IPC: H01L29/772

CPC classification number: H01L21/76804 ,  H01L21/823807 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming features and structures thereof are disclosed. In one embodiment, a method of forming a feature includes forming a first material over a workpiece, forming a first pattern for a lower portion of the feature in the first material, and filling the first pattern with a sacrificial material. A second material is formed over the first material and the sacrificial material, and a second pattern for an upper portion of the feature is formed in the second material. The sacrificial material is removed. The first pattern and the second pattern are filled with a third material.

Abstract translation: 公开了形成特征及其结构的方法。 在一个实施例中，形成特征的方法包括在工件上形成第一材料，形成用于第一材料中特征的下部的第一图案，以及用牺牲材料填充第一图案。 在第一材料和牺牲材料上形成第二材料，并且在第二材料中形成用于特征的上部的第二图案。 牺牲材料被去除。 第一图案和第二图案填充有第三材料。

公开(公告)号：US20110134523A1

公开(公告)日：2011-06-09

申请号：US12826882

申请日：2010-06-30

Applicant: PING-HAN WU ,  Kuang-Po Chang

Inventor： PING-HAN WU ,  Kuang-Po Chang

IPC: G02B5/30 ,  G02B27/28

CPC classification number: G02B27/28

Abstract: A dual pulsed light generation apparatus including a polarization beam splitter (PBS), a first polarization reflector, and a second polarization reflector is provided. The PBS has a first plane, a second plane, and a dividing interface located between the first plane and the second plane. The PBS is located in the transmission path of an incident pulsed light and used for dividing the incident pulsed light into a first polarization pulsed light reflected by the dividing interface and a second polarization pulsed light passing through the dividing interface. The first polarization reflector is disposed opposite to the first plane and transforms the first polarization pulsed light into a third polarization pulsed light passing through the dividing interface. The first polarization reflector is disposed opposite to the second plane.

Abstract translation: 提供了包括偏振分束器（PBS），第一偏振反射器和第二偏振反射器的双脉冲发光装置。 PBS具有位于第一平面和第二平面之间的第一平面，第二平面和分隔界面。 PBS位于入射脉冲光的传输路径中，用于将入射的脉冲光分成由分隔界面反射的第一偏振脉冲光和穿过分割界面的第二偏振脉冲光。 第一偏振反射器设置成与第一平面相对，并将第一偏振脉冲光转换成通过分割界面的第三偏振脉冲光。 第一偏振反射器设置成与第二平面相对。

公开(公告)号：US07893502B2

公开(公告)日：2011-02-22

申请号：US12465908

申请日：2009-05-14

Applicant: Weipeng Li ,  Dae-Gyu Park ,  Melanie J. Sherony ,  Jin-Ping Han ,  Yong Meng Lee

Inventor： Weipeng Li ,  Dae-Gyu Park ,  Melanie J. Sherony ,  Jin-Ping Han ,  Yong Meng Lee

IPC: H01L21/8238

CPC classification number: H01L21/823807

Abstract: An epitaxial semiconductor layer may be formed in a first area reserved for p-type field effect transistors. An ion implantation mask layer is formed and patterned to provide an opening in the first area, while blocking at least a second area reserved for n-type field effect transistors. Fluorine is implanted into the opening to form an epitaxial fluorine-doped semiconductor layer and an underlying fluorine-doped semiconductor layer in the first area. A composite gate stack including a high-k gate dielectric layer and an adjustment oxide layer is formed in the first and second area. P-type and n-type field effect transistors (FET's) are formed in the first and second areas, respectively. The epitaxial fluorine-doped semiconductor layer and the underlying fluorine-doped semiconductor layer compensate for the reduction of the decrease in the threshold voltage in the p-FET by the adjustment oxide portion directly above.

Abstract translation: 可以在为p型场效应晶体管保留的第一区域中形成外延半导体层。 形成离子注入掩模层并图案化以在第一区域中提供开口，同时阻挡至少为n型场效应晶体管保留的第二区域。 将氟注入到开口中以在第一区域中形成外延氟掺杂半导体层和下面的掺氟半导体层。 在第一和第二区域中形成包括高k栅极电介质层和调整氧化物层的复合栅极堆叠。 P型和n型场效应晶体管（FET）分别形成在第一和第二区域中。 外延氟掺杂半导体层和下面的掺氟半导体层通过直接在上面的调整氧化物部分来补偿p-FET中阈值电压的降低。

公开(公告)号：US20100297818A1

公开(公告)日：2010-11-25

申请号：US12850119

申请日：2010-08-04

Applicant: Jin-Ping Han ,  Alois Gutmann ,  Roman Knoefler ,  Jiang Yan ,  Chris Stapelmann ,  Jingyu Lian ,  Yung Fu Chong

Inventor： Jin-Ping Han ,  Alois Gutmann ,  Roman Knoefler ,  Jiang Yan ,  Chris Stapelmann ,  Jingyu Lian ,  Yung Fu Chong

IPC: H01L21/8238

CPC classification number: H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823864 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7845 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method of making a semiconductor device, a first gate stack is formed on a substrate at a pFET region, which includes a first gate electrode material. The source/drain regions of the substrate are etched at the pFET region and the first gate electrode material of the first gate stack is etched at the pFET region. The etching is at least partially selective against etching oxide and/or nitride materials so that the nFET region is shielded by a nitride layer (and/or a first oxide layer) and so that the spacer structure of the pFET region at least partially remains. Source/drain recesses are formed and at least part of the first gate electrode material is removed by the etching to form a gate electrode recess at the pFET region. A SiGe material is epitaxially grown in the source/drain recesses and in the gate electrode recess at the pFET region. The SMT effect is achieved from the same nitride nFETs mask.

Abstract translation: 在制造半导体器件的方法中，在包括第一栅极电极材料的pFET区域的衬底上形成第一栅极堆叠。 在pFET区域蚀刻衬底的源/漏区，并且在pFET区域蚀刻第一栅极堆叠的第一栅电极材料。 蚀刻对蚀刻氧化物和/或氮化物材料至少部分选择性，使得nFET区域被氮化物层（和/或第一氧化物层）屏蔽，并且使得pFET区域的间隔结构至少部分保留。 形成源极/漏极凹部，并且通过蚀刻去除第一栅电极材料的至少一部分，以在pFET区域形成栅电极凹部。 SiGe材料在源极/漏极凹槽中以及在pFET区域的栅极电极凹槽中外延生长。 SMT效应由相同的氮化物nFET掩模实现。

公开(公告)号：US20100278774A1

公开(公告)日：2010-11-04

申请号：US12700949

申请日：2010-02-05

Applicant: Hing C. Wong ,  Peter Rhode ,  Xiaoyun Zhu ,  Kai-ping Han

Inventor： Hing C. Wong ,  Peter Rhode ,  Xiaoyun Zhu ,  Kai-ping Han

IPC: A61K38/20 ,  C07K14/54 ,  C07H21/04 ,  C12N15/63 ,  C12N5/10 ,  C12N1/21 ,  C12P21/00 ,  A61P37/04 ,  A61P37/06

CPC classification number: C07K14/5443 ,  A61K38/00 ,  A61K38/1774 ,  A61K38/1793 ,  A61K38/2086 ,  C07K14/7051 ,  C07K14/7155 ,  C07K16/18 ,  C07K16/28 ,  C07K2319/00 ,  C07K2319/31 ,  C07K2319/33 ,  C07K2319/74 ,  C07K2319/75 ,  C12N15/09 ,  C12N15/62 ,  C12P21/00 ,  G01N33/56977

Abstract: The instant invention provides soluble fusion protein complexes and IL-15 variants that have therapeutic and diagnostic use, and methods for making the such proteins. The instant invention additionally provides methods of stimulating or suppressing immune responses in a mammal using the fusion protein complexes and IL-15 variants of the invention.

Abstract translation: 本发明提供具有治疗和诊断用途的可溶性融合蛋白复合物和IL-15变体，以及制备这些蛋白质的方法。 本发明另外提供使用本发明的融合蛋白复合物和IL-15变体刺激或抑制哺乳动物中免疫应答的方法。

公开(公告)号：US07800182B2

公开(公告)日：2010-09-21

申请号：US11602117

申请日：2006-11-20

Applicant: Jin-Ping Han ,  Alois Gutmann ,  Roman Knoefler ,  Jiang Yan ,  Chris Stapelmann ,  Jingyu Lian ,  Yung Fu Chong

Inventor： Jin-Ping Han ,  Alois Gutmann ,  Roman Knoefler ,  Jiang Yan ,  Chris Stapelmann ,  Jingyu Lian ,  Yung Fu Chong

IPC: H01L23/62

CPC classification number: H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823864 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7845 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method of making a semiconductor device, a first gate stack is formed on a substrate at a pFET region, which includes a first gate electrode material. The source/drain regions of the substrate are etched at the pFET region and the first gate electrode material of the first gate stack is etched at the pFET region. The etching is at least partially selective against etching oxide and/or nitride materials so that the nFET region is shielded by a nitride layer (and/or a first oxide layer) and so that the spacer structure of the pFET region at least partially remains. Source/drain recesses are formed and at least part of the first gate electrode material is removed by the etching to form a gate electrode recess at the pFET region. A SiGe material is epitaxially grown in the source/drain recesses and in the gate electrode recess at the pFET region. The SMT effect is achieved from the same nitride nFETs mask.

Abstract translation: 在制造半导体器件的方法中，在包括第一栅极电极材料的pFET区域的衬底上形成第一栅极堆叠。 在pFET区域蚀刻衬底的源/漏区，并且在pFET区域蚀刻第一栅极堆叠的第一栅电极材料。 蚀刻对蚀刻氧化物和/或氮化物材料至少部分选择性，使得nFET区域被氮化物层（和/或第一氧化物层）屏蔽，并且使得pFET区域的间隔结构至少部分保留。 形成源极/漏极凹部，并且通过蚀刻去除第一栅电极材料的至少一部分，以在pFET区域形成栅电极凹部。 SiGe材料在源极/漏极凹槽中以及在pFET区域的栅极电极凹槽中外延生长。 SMT效应由相同的氮化物nFET掩模实现。

公开(公告)号：US07708895B2

公开(公告)日：2010-05-04

申请号：US10569967

申请日：2004-08-27

Applicant: Shequan Gou ,  Jianwen Da ,  Yougui Zhang ,  Ping Han ,  Jingyi Zhang

Inventor： Shequan Gou ,  Jianwen Da ,  Yougui Zhang ,  Ping Han ,  Jingyi Zhang

IPC: B01D17/06

CPC classification number: C10G33/06 ,  B01D17/0208 ,  B01D17/04 ,  B01D17/06 ,  C02F1/36 ,  C02F1/40 ,  C02F2101/325

Abstract: A method for demulsifying water-oil emulsions through ultrasonic action, comprises a step of making the water-oil emulsions flow through at least one ultrasonic acting region in a flow direction, wherein: within the ultrasonic acting region, a concurrent ultrasonic wave whose traveling direction is the same as the flow direction of the water-oil emulsions is generated by at least a one first ultrasonic transducer provided at the upstream end of the ultrasonic acting region, and at same time, a countercurrent ultrasonic wave whose traveling direction is opposite to the flow direction of the water-oil emulsions is generated by at least a one second ultrasonic transducer provided at the downstream end of the ultrasonic acting region; and the concurrent ultrasonic wave and the countercurrent ultrasonic wave act simultaneously on the water-oil emulsions which flow through the ultrasonic acting region, so as to demulsify the water-oil emulsions. After being demulsified, the water-oil emulsions gravity settle and separate, or settle and separate under an electric field, so as to be dewatered. The present invention can apply to various water-oil separating technologies in the procedures from mining to processing of crude oil.

Abstract translation: 一种通过超声波作用对水 - 油乳化液进行破乳的方法，包括使水 - 油乳液在流动方向上流过至少一个超声波作用区域的步骤，其中：在超声作用区域内，并行超声波的行进方向 与通过设置在超声波作用区域的上游端的至少一个第一超声波振子产生水油乳剂的流动方向相同，同时，与其相反的逆流超声波 通过设置在超声波作用区域的下游端的至少一个第二超声换能器产生水 - 油乳液的流动方向; 同时超声波和逆流超声波同时作用于流过超声波作用区域的水 - 油乳液，从而使水 - 油乳化液破乳。 破乳后，水油乳液重力沉降分离，或在电场下沉降分离，脱水。 本发明可应用于从采矿到原油加工的各种水油分离技术。

公开(公告)号：US07696019B2

公开(公告)日：2010-04-13

申请号：US11371544

申请日：2006-03-09

Applicant: Jin-Ping Han

Inventor： Jin-Ping Han

IPC: H01L21/00

CPC classification number: H01L29/7834 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7848

Abstract: Semiconductor devices and methods of manufacturing thereof are disclosed. A preferred embodiment includes a semiconductor device comprising a workpiece, the workpiece including a first region and a second region proximate the first region. A first material is disposed in the first region, and at least one region of a second material is disposed within the first material in the first region, the second material comprising a different material than the first material. The at least one region of the second material increases a first stress of the first region.

Abstract translation: 公开了半导体器件及其制造方法。 优选实施例包括包括工件的半导体器件，所述工件包括第一区域和靠近第一区域的第二区域。 第一材料设置在第一区域中，并且第二材料的至少一个区域设置在第一区域内的第一材料内，第二材料包括与第一材料不同的材料。 第二材料的至少一个区域增加第一区域的第一应力。