公开(公告)号：US20210277515A1

公开(公告)日：2021-09-09

申请号：US17330980

申请日：2021-05-26

Applicant: SILCOTEK CORP.

Inventor： Min YUAN

IPC: C23C16/02 ,  C23C16/24 ,  C23C16/56

Abstract: Fluid contact process, coated article, and coating processes are disclosed. The fluid contact process includes flowing a corrosive fluid to contact a coated article. The coated article includes an aluminum-containing substrate, a first region on the aluminum-containing substrate, the first region comprising carbon and silicon, a second region distal from the aluminum-containing substrate in comparison to the first region, the second region having oxygen at a greater concentration, by weight, than the first region, a third region distal from the first region in comparison to the second region, the third region comprising amorphous silicon. The coating process includes positioning the aluminum-containing substrate within an enclosed chamber, then, thermally decomposing dimethyl silane-and-silane-containing mixture within the enclosed chamber, then thermally oxidizing, and then, thermally decomposing silane.

公开(公告)号：US10731247B2

公开(公告)日：2020-08-04

申请号：US15683399

申请日：2017-08-22

Applicant: SILCOTEK CORP.

Inventor： David A. Smith ,  James B. Mattzela ,  Paul H. Silvis ,  Gary A. Barone

IPC: C23C16/32 ,  C23C16/56 ,  C23C8/10 ,  B05D1/00

Abstract: The present invention relates to a coated article. The coated article includes a first layer, a second layer, and a diffusion region between the first layer and the second layer. The first layer has a first atomic concentration of C, a first atomic concentration of Si, and a first atomic concentration of O. The second layer has a first atomic concentration of Fe, a first atomic concentration of Cr, and a first atomic concentration of Ni. The diffusion region has a second atomic concentration of the C, a second atomic concentration of the Si, a second atomic concentration of the O, a second atomic concentration of the Fe, a second atomic concentration of the Cr, and a second atomic concentration of the Ni. All of the atomic concentrations are based upon Auger Electron Spectroscopy.

公开(公告)号：US20190262745A1

公开(公告)日：2019-08-29

申请号：US16282626

申请日：2019-02-22

Applicant: SILCOTEK CORP.

Inventor： Jesse BISCHOF ,  Lucas D. PATTERSON ,  Gary BARONE ,  Min YUAN ,  David A. SMITH

IPC: B01D15/38 ,  G01N30/36 ,  B01D15/22

Abstract: Liquid chromatography techniques are disclosed. Specifically, the liquid chromatography technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid-contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150° C., pressure urging the fluid being greater than 60 MPa, the fluid having a protein-containing analyte incompatible with one or both of titanium and polyether ether ketone, the fluid having a chelating agent incompatible with the one or both of the titanium or the polyether ether ketone, and combinations thereof.

公开(公告)号：US20190077118A1

公开(公告)日：2019-03-14

申请号：US16129989

申请日：2018-09-13

Applicant: SILCOTEK CORP.

Inventor： Min YUAN

IPC: B32B15/01 ,  B32B15/18 ,  C23C16/40 ,  C23C16/44

Abstract: Corrosion-resistant coated articles and a thermal chemical vapor deposition coating processes are disclosed. The article includes a metallic material having a first composition including a first iron concentration and a first chromium concentration, the first iron concentration being greater than the first chromium concentration, a surface of the metallic material having a second composition including a second iron concentration and a second chromium concentration, the second chromium concentration being less than the first chromium concentration, an oxide layer on the surface of the metallic material having a third composition including an iron oxide concentration and a chromium oxide concentration, the chromium oxide concentration being greater than the iron oxide concentration and being devoid of precipitates, and a thermal chemical vapor deposition coating on the oxide layer. The process includes producing the article by treating to produce the surface, oxidizing to produce the oxide layer, and applying the coating.

公开(公告)号：US20170335451A1

公开(公告)日：2017-11-23

申请号：US15599019

申请日：2017-05-18

Applicant: SILCOTEK CORP.

Inventor： Nicholas P. DESKEVICH ,  Pierre A. LECLAIR ,  David A. SMITH

IPC: C23C16/448 ,  C23C16/32 ,  C23C16/42 ,  C23C16/455

CPC classification number: C23C16/4485 ,  C22C19/00 ,  C22C19/03 ,  C22C19/055 ,  C22C19/056 ,  C22C21/00 ,  C22C21/02 ,  C22C21/04 ,  C22C21/12 ,  C22C21/14 ,  C22C21/16 ,  C22C38/00 ,  C23C16/30 ,  C23C16/4408 ,  C23C16/4481 ,  C23C16/45561

Abstract: Static thermal chemical vapor deposition treatment processes and static thermal chemical vapor deposition treatment systems are disclosed. The process includes providing an enclosed chamber configured to produce a material on a surface of an article within the enclosed chamber in response thermal energy being applied to a gaseous precursor, providing a liquid handling system in selective fluid communication with the enclosed chamber, flowing a liquid precursor through the liquid handling system, converting the liquid precursor to the gaseous precursor, and producing the material on the surface of the article in response to the thermal energy being applied to the gaseous precursor within the enclosed chamber. The system includes the enclosed chamber and the liquid handling system.

公开(公告)号：US20170167015A1

公开(公告)日：2017-06-15

申请号：US14970015

申请日：2015-12-15

Applicant: SILCOTEK CORP.

Inventor： Min YUAN ,  James B. MATTZELA ,  David A. SMITH

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  C23C16/30

CPC classification number: C23C16/345 ,  C23C16/045 ,  C23C16/308 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/56

Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

公开(公告)号：US20160289824A1

公开(公告)日：2016-10-06

申请号：US14675795

申请日：2015-04-01

Applicant: SILCOTEK CORP.

Inventor： James B. MATTZELA ,  Min YUAN ,  David A. SMITH ,  Paul H. SILVIS

IPC: C23C16/44 ,  C22C21/08 ,  C23C16/02

CPC classification number: C23C16/44 ,  C22C21/08 ,  C23C16/0209

Abstract: An article including a coating and a process including an article with a coating are disclosed. The article includes an aluminum-containing substrate including, by weight, at least 95% aluminum, and a coated and stabilized surface on the aluminum-containing substrate, the coated and stabilized surface being applied by thermal chemical vapor deposition at a temperature of less than 600° C. The process includes transporting fluid along a coated and stabilized surface positioned on an aluminum-containing substrate.

Abstract translation: 公开了一种包括涂层和包括具有涂层的制品的工艺的制品。 该制品包括含铝基材，其包含至少95重量％的铝，以及在含铝基材上的涂层和稳定化表面，涂覆和稳定的表面通过热化学气相沉积在小于 600℃。该方法包括沿着位于含铝基底上的涂覆和稳定的表面输送流体。

公开(公告)号：US20160289124A1

公开(公告)日：2016-10-06

申请号：US14675806

申请日：2015-04-01

Applicant: SILCOTEK CORP.

Inventor： James B. MATTZELA ,  Min YUAN ,  David A. SMITH ,  Paul H. SILVIS

IPC: C04B35/622 ,  C23C16/44 ,  C04B35/14 ,  C23C16/50

CPC classification number: C23C16/56 ,  C04B41/009 ,  C04B41/5035 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C16/401 ,  C04B35/00 ,  C04B38/00 ,  C04B41/4531 ,  C04B41/4922

Abstract: Thermal chemical vapor deposition products and processes are disclosed. The products include a ceramic substrate and a non-porous surface on the ceramic substrate, the non-porous surface including a ceramic material. The process includes transporting fluid along a non-porous surface, the non-porous surface being positioned on a ceramic substrate and being a thermal chemical vapor deposition coating.

Abstract translation: 公开了热化学气相沉积产物和方法。 所述产品包括陶瓷基板和陶瓷基板上的无孔表面，所述无孔表面包括陶瓷材料。 该方法包括沿无孔表面输送流体，无孔表面位于陶瓷基底上并且是热化学气相沉积涂层。

公开(公告)号：US20160168697A1

公开(公告)日：2016-06-16

申请号：US14946115

申请日：2015-11-19

Applicant: SILCOTEK CORP.

Inventor： David A. SMITH ,  Min YUAN ,  James B. MATTZELA

IPC: C23C16/44 ,  C23C16/24

CPC classification number: C23C16/44 ,  C23C16/24 ,  C23C16/4402 ,  C23C16/4404

Abstract: A delivery device, manufacturing system, and process of manufacturing are disclosed. The delivery device includes a feed tube and a chemical vapor deposition coating applied over an inner surface of the feed tube, the chemical vapor deposition coating being formed from decomposition of dimethylsilane. The manufacturing system includes the delivery device and a chamber in selective fluid communication with the delivery device. The process of manufacturing uses the manufacturing system to produce an article.

Abstract translation: 公开了一种输送装置，制造系统和制造方法。 输送装置包括施加在进料管的内表面上的进料管和化学气相沉积涂层，化学气相沉积涂层由二甲基硅烷的分解形成。 制造系统包括输送装置和与输送装置选择性流体连通的室。 制造过程使用制造系统来生产制品。

公开(公告)号：US20140357091A1

公开(公告)日：2014-12-04

申请号：US14464748

申请日：2014-08-21

Applicant: SILCOTEK CORP.

Inventor： James B. MATTZELA

IPC: H01L21/02

CPC classification number: C23C16/56 ,  B05D1/60 ,  C09D7/00 ,  C23C16/22

Abstract: Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer being applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.

Abstract translation: 描述半导体制造工艺。 半导体制造工艺的一个实施例包括通过化学气相沉积提供由二甲基硅烷分解形成的层，该层由流体材料施加，然后将该层定位在用于制造半导体产品的系统中。 另外或替代地，制造半导体产品和/或该层在基底上。