公开(公告)号：US20070070689A1

公开(公告)日：2007-03-29

申请号：US11378351

申请日：2006-03-20

申请人： Sumio Ikegawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Eiji Kitagawa ,  Hiroaki Yoda

发明人： Sumio Ikegawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Eiji Kitagawa ,  Hiroaki Yoda

IPC分类号： G11C11/14

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

摘要翻译： 根据本发明的一个方面的磁阻元件包括磁化状态改变的自由层和固定磁化状态的固定层。 自由层包括第一和第二铁磁层和布置在第一和第二铁磁层之间的非磁性层。 第一和第二铁磁层之间的交换耦合强度被设定为使得硬轴方向上的星形曲线打开。

公开(公告)号：US07172920B2

公开(公告)日：2007-02-06

申请号：US11168423

申请日：2005-06-29

申请人： Sumio Ikegawa ,  Kohei Nakayama ,  Hideyuki Funaki ,  Yoshinori Iida ,  Keitaro Shigenaka

发明人： Sumio Ikegawa ,  Kohei Nakayama ,  Hideyuki Funaki ,  Yoshinori Iida ,  Keitaro Shigenaka

IPC分类号： H01L21/00

CPC分类号： H04N5/33 ,  G01J5/20 ,  G01J5/22 ,  G01J5/24 ,  G01J2005/202 ,  H01L27/16

摘要： An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

摘要翻译： 成像装置包括选择线，与选择线交叉的第一信号线和设置在与选择线和第一信号线的交叉部分对应的部分处的第一像素，第一像素包括形成在第一信号线上的第一缓冲层 基板，形成在第一缓冲层上的第一测辐射热计薄膜，由经历金属 - 绝缘体转变的化合物制成，并产生第一温度检测信号，形成在基板上的第一开关元件，通过来自选择的选择信号选择 并且将第一温度检测信号提供给第一信号线，以及将第一测辐射热计薄膜的顶表面连接到第一开关元件的金属布线。

公开(公告)号：US20070012972A1

公开(公告)日：2007-01-18

申请号：US11389110

申请日：2006-03-27

申请人： Masahiko Nakayama ,  Tadashi Kai ,  Sumio Ikegawa ,  Yoshiaki Fukuzumi ,  Tatsuya Kishi

发明人： Masahiko Nakayama ,  Tadashi Kai ,  Sumio Ikegawa ,  Yoshiaki Fukuzumi ,  Tatsuya Kishi

IPC分类号： H01L29/94

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228

摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.

摘要翻译： 磁存储器件包括磁阻元件和第一布线层。 磁阻元件包括固定层，记录层和介于其间的非磁性层。 第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。 记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部 在与第二方向垂直的第三方向上的基部。 基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。

公开(公告)号：US20060126371A1

公开(公告)日：2006-06-15

申请号：US11262791

申请日：2005-11-01

申请人： Toshihiko Nagase ,  Sumio Ikegawa

发明人： Toshihiko Nagase ,  Sumio Ikegawa

IPC分类号： G11C11/22

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive effect device includes a first ferromagnetic layer having a fixed magnetization direction and having magnetic moment ml per unit area. A nonmagnetic layer contacts with the first ferromagnetic layer and has an amplitude hi of roughness of an interface between the nonmagnetic layer and the first ferromagnetic layer. A second ferromagnetic layer contacts with the nonmagnetic layer, has a fixed magnetization direction, has magnetic moment m2 per unit area which is smaller than the magnetic moment m1, and has an amplitude h2 of roughness of an interface between the second ferromagnetic layer and the nonmagnetic layer. A barrier layer contacts with the second ferromagnetic layer, and has an amplitude h3, which is smaller than the amplitudes h1 and h2, of roughness of an interface between the barrier layer and the second ferromagnetic layer. A third ferromagnetic layer contacts with the barrier layer and has a variable magnetization direction.

摘要翻译： 磁阻效应器件包括具有固定磁化方向的第一铁磁层，并且每单位面积具有磁矩ml。 非磁性层与第一铁磁层接触并且具有在非磁性层和第一铁磁层之间的界面的粗糙度的振幅hi。 第二铁磁层与非磁性层接触，具有固定的磁化方向，每单位面积的磁矩m 2小于磁矩m 1，并且具有第二铁磁层之间的界面的粗糙度的振幅h 2 和非磁性层。 阻挡层与第二铁磁层接触，并且具有比阻挡层和第二铁磁层之间的界面的粗糙度的幅度h 1和h 2的振幅h 3。 第三铁磁层与阻挡层接触并具有可变的磁化方向。

公开(公告)号：US20050195644A1

公开(公告)日：2005-09-08

申请号：US11067670

申请日：2005-03-01

申请人： Sumio Ikegawa ,  Yoshihisa Iwata ,  Kenji Tsuchida

发明人： Sumio Ikegawa ,  Yoshihisa Iwata ,  Kenji Tsuchida

IPC分类号： G11C11/15 ,  G11C11/00

CPC分类号： G11C11/16

摘要： The number of read errors can be reduced, and a large read signal can be produced. A method of driving a magnetoresistive random access memory including memory cells, a state of which is switched between binary resistance values using a single kind of write pulses is proposed, the method comprising: selecting a memory cell; reading a resistance value, which is one of the binary resistance values, of the selected memory cell, the resistance value read being defined as a first resistance value; performing a first write operation on the selected memory cell using the write pulse to change the resistance value of the selected memory cell to the other of the binary resistance values; reading the other of the binary resistance values, which is defined as a second resistance value; comparing the second resistance value with the first resistance value, and determining data originally stored in the selected memory cell based on the comparison result; and performing a second write operation on the selected memory cell using the write pulse to change the second resistance value of the selected memory cell to the first resistance value.

摘要翻译： 可以减少读取错误的数量，并且可以产生大的读取信号。 提出一种驱动包含存储单元的磁阻随机存取存储器的方法，该存储单元的状态是使用单种写入脉冲在二进制电阻值之间切换的，该方法包括：选择存储单元; 读取所选存储单元的二进制电阻值之一的电阻值，读取的电阻值被定义为第一电阻值; 使用所述写入脉冲对所选择的存储单元执行第一写入操作，以将所选存储单元的电阻值改变为所述二进制电阻值中的另一个; 读取被定义为第二电阻值的二进制电阻值中的另一个; 将所述第二电阻值与所述第一电阻值进行比较，并且基于所述比较结果确定原始存储在所选存储单元中的数据; 以及使用所述写入脉冲对所选择的存储单元执行第二写入操作，以将所选存储单元的第二电阻值改变为所述第一电阻值。

公开(公告)号：US4855992A

公开(公告)日：1989-08-08

申请号：US136972

申请日：1987-12-23

申请人： Sumio Ikegawa ,  Akio Hori ,  Shuichi Komatsu ,  Shinji Arai ,  Nobuaki Yasuda

发明人： Sumio Ikegawa ,  Akio Hori ,  Shuichi Komatsu ,  Shinji Arai ,  Nobuaki Yasuda

IPC分类号： B41M5/26 ,  G11B7/0045 ,  G11B7/24 ,  G11B7/243 ,  G11B7/244

CPC分类号： G11B7/253 ,  G11B7/00452 ,  G11B7/24 ,  G11B7/243 ,  Y10S430/146

摘要： There is disclosed a bubble-mode data-rewritable optical disc, which has a transparent substrate and a recording layer, formed on the substrate, for storing data to be optically rewritable. The substrate is at least partially formed of an organic material, which releases a gas component when it is heated at a radiation region of a data recording light beam. The recording layer is deposited on the substrate by co-sputtering or co-vacuum evaporation. The recording layer is made of a specific amorphous material containing silicon and fine metal particles. When the gas component is released from the substrate, the recording layer is deformed to be locally peeled off out of the substrate by pressure of the gas component, thus forming a protuberance. In a data erasing mode, a data erasing light beam is radiated onto the recording layer, which is then deformed so as to cause the protuberance to disappear, and has a substantially flat surface, thereby erasing the stored information.

摘要翻译： 公开了一种气泡模式数据可重写光盘，其具有形成在基板上的用于存储要被光学重写的数据的透明基板和记录层。 衬底至少部分地由有机材料形成，当在数据记录光束的辐射区域被加热时释放气体成分。 记录层通过共溅射或共真空蒸发沉积在基底上。 记录层由含有硅和细金属颗粒的特定无定形材料制成。 当气体组分从衬底上释放时，记录层变形，通过气体组分的压力局部地剥离出衬底，从而形成凸起。 在数据擦除模式中，将数据擦除光束照射到记录层上，然后变形，使得突起消失，并且具有基本上平坦的表面，从而擦除所存储的信息。

公开(公告)号：US4839861A

公开(公告)日：1989-06-13

申请号：US012074

申请日：1987-02-06

申请人： Sumio Ikegawa ,  Shuichi Komatsu ,  Shinji Arai ,  Sumio Ashida ,  Nobuaki Yasuda

发明人： Sumio Ikegawa ,  Shuichi Komatsu ,  Shinji Arai ,  Sumio Ashida ,  Nobuaki Yasuda

IPC分类号： G11B7/00 ,  B41M5/26 ,  G11B7/0055 ,  G11B7/243 ,  G11B7/30

CPC分类号： G11B7/257 ,  G11B7/00557 ,  G11B7/243 ,  G11B2007/24308 ,  G11B2007/24312 ,  G11B2007/2571 ,  G11B2007/25713 ,  G11B7/252 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/254

摘要： A rewritable information recording medium which has a recording layer containing a Group I transition element and a Group IV representative elements of the Periodic Table as two principal element and a support substrate for physically supporting the recording layer, and an information-write, -read, and erase method using this recording medium. When the recording layer is immediately cooled after it is heated up to near a eutectic temperature of the two principal elements, two metastable phases having different energy levels appear. A state in the first metastable phase of the higher energy level has a reflectivity sufficiently higher than that of a state of a mixed phase including the second metastable phase of the lower energy level, or that of the equilibrium state. The state in the first metastable phase can be obtained by heating a recording layer in another state by light beam irradiation. A portion in the first metastable state is cooled after it is heated to a temperature lower than that for obtaining the first metastable phase, so that it can be converted to a state of the low reflectivity, i.e., a state of a mixed phase including the second metastable phase or to the equilibrium state.

摘要翻译： 一种可重写信息记录介质，其具有包含作为两个主要元件的元素周期表的第I族过渡元素和IV族代表元素的记录层和用于物理支撑记录层的支撑基板，以及信息写入的读取记录介质， 和使用该记录介质的擦除方法。 当记录层在被加热到两个主要元素的共晶温度附近之后立即冷却时，出现具有不同能级的两个亚稳相。 较高能量级的第一亚稳态中的状态具有足够高于包括较低能量级的第二亚稳态或平衡态的混合相的状态的反射率的反射率。 可以通过光束照射在另一状态下加热记录层来获得第一亚稳相中的状态。 第一亚稳态中的一部分在被加热到低于用于获得第一亚稳相的温度以下的温度下被冷却，使得其可以转化为低反射率的状态，即包括 第二亚稳态或平衡态。

公开(公告)号：US20160055891A1

公开(公告)日：2016-02-25

申请号：US14593678

申请日：2015-01-09

申请人： Hisanori AIKAWA ,  Masayoshi IWAYAMA ,  Akiyuki MURAYAMA ,  Tatsuya KISHI ,  Sumio IKEGAWA

发明人： Hisanori AIKAWA ,  Masayoshi IWAYAMA ,  Akiyuki MURAYAMA ,  Tatsuya KISHI ,  Sumio IKEGAWA

IPC分类号： G11C11/16

CPC分类号： G11C11/161 ,  G11C11/1655 ,  G11C11/1675

摘要： According to one embodiment, a magnetic memory includes a memory cell array including magnetoresistive elements, a heater and a temperature sensor provided in the memory cell array, a heater driver which drives the heater, a temperature detector which detects a first temperature sensed by the temperature sensor, and a control circuit which controls the heater driver based on the first temperature.

摘要翻译： 根据一个实施例，磁存储器包括存储单元阵列，其包括磁阻元件，设置在存储单元阵列中的加热器和温度传感器，驱动加热器的加热器驱动器，检测由温度感测的第一温度的温度检测器 传感器，以及基于第一温度控制加热器驱动器的控制电路。

公开(公告)号：US09269889B2

公开(公告)日：2016-02-23

申请号：US14479163

申请日：2014-09-05

申请人： Keiji Hosotani ,  Sumio Ikegawa ,  Tatsuya Kishi

发明人： Keiji Hosotani ,  Sumio Ikegawa ,  Tatsuya Kishi

IPC分类号： H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a semiconductor memory device comprises a memory cell array. The memory cell array has a plurality of magnetic tunnel junction (MTJ) elements. Each of the MTJ elements has a first magnetic layer, a second magnetic layer and a non-magnetic layer therebetween, and a hard mask layer is arranged above the second magnetic layer. The plurality of MTJ elements have a first MTJ element having a first hard mask layer and a second MTJ element having a second hard mask layer, and a dimension of, the first hard mask layer is greater than that of the second hard mask layer.

摘要翻译： 根据一个实施例，半导体存储器件包括存储单元阵列。 存储单元阵列具有多个磁性隧道结（MTJ）元件。 MTJ元件中的每一个都具有第一磁性层，第二磁性层和非磁性层，硬掩模层设置在第二磁性层的上方。 多个MTJ元件具有具有第一硬掩模层的第一MTJ元件和具有第二硬掩模层的第二MTJ元件，第一硬掩模层的尺寸大于第二硬掩模层的尺寸。

公开(公告)号：US20150260804A1

公开(公告)日：2015-09-17

申请号：US14478925

申请日：2014-09-05

申请人： Tatsuya KISHI ,  Sumio IKEGAWA

发明人： Tatsuya KISHI ,  Sumio IKEGAWA

IPC分类号： G01R33/12 ,  G11C29/08 ,  G11C11/16

CPC分类号： G01R33/1207 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C29/56016 ,  G11C2029/5002 ,  G11C2029/5602

摘要： According to one embodiment, a tester includes a magnetic shield portion having a space which is shielded from an external magnetic field, a controller generating a test signal for testing a magnetic memory having a magnetoresistive element provided in the space, an interface portion in the space, the interface portion which functions as an interface between the controller and the magnetic memory, and a magnetic field generating portion in the space, the magnetic field generating portion generating a test magnetic field while the magnetic memory is tested by the test signal.

摘要翻译： 根据一个实施例，测试仪包括具有屏蔽外部磁场的空间的磁屏蔽部分，产生用于测试设置在该空间中的具有磁阻元件的磁存储器的测试信号的控制器，该空间中的接口部分 ，用作控制器和磁存储器之间的接口的接口部分和该空间中的磁场产生部分，在通过测试信号测试磁存储器的同时产生测试磁场的磁场产生部分。