公开(公告)号：US20160268502A1

公开(公告)日：2016-09-15

申请号：US14808347

申请日：2015-07-24

申请人： Hisanori AIKAWA ,  Masayoshi IWAYAMA

发明人： Hisanori AIKAWA ,  Masayoshi IWAYAMA

IPC分类号： H01L43/12 ,  H01L43/08 ,  H01L21/66 ,  H01L43/02

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C2029/5002 ,  H01L22/14 ,  H01L43/02 ,  H01L43/08

摘要： According to one embodiment, a method for manufacturing a magnetic memory is disclosed. The method includes forming a magnetoresistive element on a substrate. The method further includes measuring an electrical characteristic of the magnetoresistive element, and applying a voltage to the magnetoresistive element which the electrical characteristic is measured.

摘要翻译： 根据一个实施例，公开了一种用于制造磁存储器的方法。 该方法包括在衬底上形成磁阻元件。 该方法还包括测量磁阻元件的电特性，以及向测量电特性的磁阻元件施加电压。

公开(公告)号：US20160055891A1

公开(公告)日：2016-02-25

申请号：US14593678

申请日：2015-01-09

申请人： Hisanori AIKAWA ,  Masayoshi IWAYAMA ,  Akiyuki MURAYAMA ,  Tatsuya KISHI ,  Sumio IKEGAWA

发明人： Hisanori AIKAWA ,  Masayoshi IWAYAMA ,  Akiyuki MURAYAMA ,  Tatsuya KISHI ,  Sumio IKEGAWA

IPC分类号： G11C11/16

CPC分类号： G11C11/161 ,  G11C11/1655 ,  G11C11/1675

摘要： According to one embodiment, a magnetic memory includes a memory cell array including magnetoresistive elements, a heater and a temperature sensor provided in the memory cell array, a heater driver which drives the heater, a temperature detector which detects a first temperature sensed by the temperature sensor, and a control circuit which controls the heater driver based on the first temperature.

摘要翻译： 根据一个实施例，磁存储器包括存储单元阵列，其包括磁阻元件，设置在存储单元阵列中的加热器和温度传感器，驱动加热器的加热器驱动器，检测由温度感测的第一温度的温度检测器 传感器，以及基于第一温度控制加热器驱动器的控制电路。

公开(公告)号：US20140124883A1

公开(公告)日：2014-05-08

申请号：US14124647

申请日：2012-03-01

申请人： Masayoshi Iwayama

发明人： Masayoshi Iwayama

IPC分类号： H01L27/22 ,  H01L43/12

CPC分类号： H01L27/222 ,  H01L27/0207 ,  H01L28/20 ,  H01L43/08 ,  H01L43/12

摘要： The semiconductor storage device includes a memory cell array region in which a plurality of storing MTJ elements capable of changing resistance depending on a direction of magnetization are arranged on a semiconductor substrate. The semiconductor storage device includes a resistive element region in which a plurality of resisting MTJ elements are arranged on the semiconductor substrate along a first direction and a second direction perpendicular to the first direction. An area of a first cross section of the resisting MTJ element parallel with an upper surface of the semiconductor substrate is larger than an area of a second cross section of the storing MTJ element parallel with the upper surface of the semiconductor substrate.

摘要翻译： 半导体存储装置包括：存储单元阵列区域，其中能够根据磁化方向改变电阻的多个存储MTJ元件布置在半导体基板上。 半导体存储装置包括电阻元件区域，其中沿着第一方向和垂直于第一方向的第二方向在半导体衬底上布置多个电阻MTJ元件。 与半导体衬底的上表面平行的抗电MTJ元件的第一横截面的面积大于与半导体衬底的上表面平行的存储MTJ元件的第二截面的面积。

公开(公告)号：US08309950B2

公开(公告)日：2012-11-13

申请号：US12700536

申请日：2010-02-04

申请人： Masayoshi Iwayama ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Masayoshi Iwayama ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

摘要： First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion on a channel region between the source/drain regions. Third semiconductor layers are on the first portions of the second semiconductor layer. A gate electrode is around the second portion of the second semiconductor layer via an insulating film. Contact plugs are in the first semiconductor layers, the first portions of the second semiconductor layers and the third semiconductor layers in the source/drain regions. A diameter of the contact plug in the second semiconductor layer is smaller than a diameter of the contact plug in the first and third semiconductor layers.

摘要翻译： 第一半导体层位于半导体衬底上的源/漏区中。 第二半导体层包括第一半导体层上的第一部分和源/漏区之间的沟道区上的第二部分。 第三半导体层位于第二半导体层的第一部分上。 栅电极经由绝缘膜在第二半导体层的第二部分周围。 接触插塞位于第一半导体层中，第二半导体层的第一部分和源/漏区中的第三半导体层。 第二半导体层中的接触插塞的直径小于第一和第三半导体层中的接触插塞的直径。

公开(公告)号：US20120273844A1

公开(公告)日：2012-11-01

申请号：US13236565

申请日：2011-09-19

申请人： Masayoshi IWAYAMA ,  Yoshiaki Asao

发明人： Masayoshi IWAYAMA ,  Yoshiaki Asao

IPC分类号： H01L29/82 ,  H01L21/20

CPC分类号： H01L27/228 ,  H01L27/0207 ,  H01L43/08

摘要： According to one embodiment, a magnetic random access memory includes a first gate electrode and a second gate electrode arranged at a predetermined pitch in a first direction, and extending in a second direction perpendicular to the first direction, a first magnetoresistive element formed above a portion between the first gate electrode and the second gate electrode, an electrode layer formed in a position higher than the first magnetoresistive element, and formed to have a distance which is a half of the pitch from the first magnetoresistive element in the first direction, an interconnection formed in a position higher than the electrode layer, and extending in the first direction, and a first via which connects the first magnetoresistive element and the interconnection, and the electrode layer and the interconnection, by using one conductive layer.

摘要翻译： 根据一个实施例，一种磁性随机存取存储器包括：第一栅电极和第二栅电极，其以第一方向以预定间距排列并且沿与第一方向垂直的第二方向延伸;第一磁阻元件，形成在一部分上方 在第一栅极电极和第二栅极电极之间形成电极层，该电极层形成在比第一磁阻元件高的位置，并且形成为距离第一磁阻元件在第一方向上的间距的一半，互连 形成在比电极层高的位置并且沿第一方向延伸的第一通孔和通过使用一个导电层连接第一磁阻元件和互连的第一通孔以及电极层和互连。

公开(公告)号：US20110294291A1

公开(公告)日：2011-12-01

申请号：US13035546

申请日：2011-02-25

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

IPC分类号： H01L21/768

CPC分类号： H01L21/02697 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883 ,  H01L27/228

摘要： According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

摘要翻译： 根据一个实施例，半导体器件包括设置在半导体衬底的表面区域中的开关元件，具有上表面和下表面的接触插塞以及设置在接触插塞的上表面上的功能元件。 接触插头的下表面连接到开关元件。 接触塞的上表面的最大粗糙度为0.2nm以下。

公开(公告)号：US07919826B2

公开(公告)日：2011-04-05

申请号：US12108093

申请日：2008-04-23

申请人： Masayoshi Iwayama ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Keiji Hosotani

发明人： Masayoshi Iwayama ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Keiji Hosotani

IPC分类号： H01L21/00

CPC分类号： H01L43/08 ,  H01L27/222 ,  H01L43/12

摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.

摘要翻译： 磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向 可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。 第一堆叠结构的圆周表面基本垂直。 第二堆叠结构具有向上变窄的锥形形状。

公开(公告)号：US20080277703A1

公开(公告)日：2008-11-13

申请号：US12107955

申请日：2008-04-23

申请人： Masayoshi Iwayama

发明人： Masayoshi Iwayama

IPC分类号： H01L31/062 ,  G11C11/00 ,  H01L21/00

CPC分类号： H01L27/226 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/5607

摘要： A magnetic random access memory includes a single tunnel junction element which includes a first fixed layer, a first recording layer, and a first nonmagnetic layer, a double tunnel junction element which includes a second fixed layer and a third fixed layer, a second recording layer, a second nonmagnetic layer formed between the second fixed layer and the second recording layer, and a third nonmagnetic layer formed between the third fixed layer and the second recording layer, and in which the magnetization directions in the second fixed layer and the second recording layer take one of the parallel state and the antiparallel state in accordance with a direction of an electric current flowing between the second fixed layer and the second recording layer, and a transistor connected to a memory cell having the single tunnel junction element and the double tunnel junction element connected in parallel.

摘要翻译： 磁性随机存取存储器包括单个隧道结元件，其包括第一固定层，第一记录层和第一非磁性层，双隧道结元件，其包括第二固定层和第三固定层，第二记录层 形成在第二固定层和第二记录层之间的第二非磁性层和形成在第三固定层和第二记录层之间的第三非磁性层，其中第二固定层和第二记录层中的磁化方向 根据在第二固定层和第二记录层之间流动的电流的方向，采取平行状态和反平行状态之一，以及连接到具有单一隧道结元件和双隧道结的存储单元的晶体管 元件并联连接。

公开(公告)号：US20080265347A1

公开(公告)日：2008-10-30

申请号：US12108093

申请日：2008-04-23

申请人： Masayoshi Iwayama ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Keiji Hosotani

发明人： Masayoshi Iwayama ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Keiji Hosotani

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L43/08 ,  H01L27/222 ,  H01L43/12

摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.

摘要翻译： 磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向 可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。 第一堆叠结构的圆周表面基本垂直。 第二堆叠结构具有向上变窄的锥形形状。

公开(公告)号：US20080224117A1

公开(公告)日：2008-09-18

申请号：US12048819

申请日：2008-03-14

申请人： Masayoshi IWAYAMA

发明人： Masayoshi IWAYAMA

IPC分类号： H01L45/00 ,  H01L29/82 ,  H01L21/00

CPC分类号： H01L27/222 ,  H01L43/12

摘要： A semiconductor memory device includes a first resistance change element having a first portion and a second portion, the first portion and the second portion having a first space in a first direction, and a second resistance change element formed to have a distance to the first resistance change element in the first direction, and having a third portion and a fourth portion, the third portion and the fourth portion having a second space in the first direction, and the first space and the second space being shorter than the distance.

摘要翻译： 半导体存储器件包括具有第一部分和第二部分的第一电阻变化元件，第一部分和第二部分在第一方向上具有第一空间，第二电阻变化元件形成为具有与第一电阻的距离 在所述第一方向上具有第二空间，并且具有第三部分和第四部分，所述第三部分和所述第四部分在所述第一方向上具有第二空间，并且所述第一空间和所述第二空间短于所述距离。