Abstract:
In a scanning probe microscope, a nanotube and metal nano-particles are combined together to configure a plasmon-enhanced near-field probe having an optical resolution on the order of nanometers as a measuring probe in which a metal structure is embedded, and this plasmon-enhanced near-field probe is installed in a highly-efficient plasmon exciting unit to repeat approaching to and retracting from each measuring point on a sample with a low contact force, so that optical information and profile information of the surface of the sample are measured with a resolution on the order of nanometers, a high S/N ratio, and high reproducibility without damaging both of the probe and the sample.
Abstract:
A phosphazene compound, which can effectively enhance flame retardancy without deteriorating mechanical properties of a resin molded product, and is also less likely to deteriorate thermal reliability and dielectric properties, is represented by the formula (1) shown below. n represents an integer of 3 to 15. wherein A represents a group selected from the group consisting of an alkoxy group, an aryloxy group and a group having a cyanato group, and at least one is a group having a cyanato group, and an example of A is a cyanatophenyl-substituted phenyloxy group represented by the formula (4) shown below, and Y in the formula (4) represents O, S, SO2, CH2, CHCH3, C(CH3)2, C(CF3)2, C(CH3)CH2CH3 or CO.
Abstract:
A high heat-resistance resin composition, the high heat-resistance resin composition being thermally treated at 150° C. for 100 hours, wherein a heat absorption amount of the high heat-resistance resin composition which is measured at a melting point thereof by Differential Scanning Calorimetry (DSC) is equal to or less than 45 J/g before thermal treatment, an increasing rate of the heat absorption amount of the high heat-resistance resin composition which is measured at a melting point thereof after the thermal treatment by Differential Scanning Calorimetry (DSC) is equal to or less than 20% as compared to that before the thermal treatment, and a degree of extensibility thereof is equal to or more than 200% after the thermal treatment.
Abstract:
The present invention aims to improve detecting accuracy and reproducibility of a biomolecule sensor. The biomolecule sensor of the present invention includes single probe molecules orderly aligned and fixed on grid points on the surface of a substrate. Accordingly, in the biomolecule sensor of the present invention: probe molecules for detecting a biomolecule are orderly aligned and separately fixed; blocking for preventing non-specific adsorption is applied to a region other than the region of the probe molecules for detecting a biomolecule; and fluorescence enhancement is achieved by metal microparticles.
Abstract:
An object of the present invention is to provide a multi-function peripheral which is easy for a user to operate. To achieve the object, according to the present invention, there is provided a peripheral connected to an information processing apparatus, which inputs and analyzes a job script constituted of packet data from the information processing apparatus, and subsequently generates an appropriate job file in accordance with the content of the job script.
Abstract:
This invention provides a cell made of polymers for spectra measurement while inhibiting a decrease in a molecular weight of resin caused by discharge treatment and having a stable hydrophilic modified surface. The hydrophilic resin cell is prepared by providing a polymeric resin cell between the two opposing electrodes, applying an electric field to a region between the above opposing electrodes under a nitrogen atmosphere with a pressure close to the atmospheric pressure to generate an electric discharge, and exposing the cell subjected to discharge treatment with a gas including oxygen.
Abstract:
A field effect transistor (100) exhibiting good performance at high voltage operation and high frequency includes a first field plate electrode (116) and a second field plate electrode (118). The second field plate electrode includes a shielding part (119) located in the region between the first field plate electrode and a drain electrode (114), and serves to shield the first field plate electrode from the drain electrode. When in the cross sectional view in the gate length direction, the length in the gate length direction of an overlap region where the second field plate electrode (118) overlap the upper part of a structure including the first field plate electrode and a gate electrode (113) is designated as Lol, and the gate length is Lg, the relation expressed as 0≦Lol/Lg≦1 holds.
Abstract:
A heat-resistant resin composition comprised of a mixture prepared by kneading a polybutylene terephthalate resin together with a component different from said polybutylene terephthalate resin, wherein a β relaxation peak of said heat-resistant resin composition on the tan δ curve determined by the dynamic viscoelasticity measurement defined in Japanese Industrial Standard K 7244-4 appears at a temperature lower than a temperature at which a β relaxation peak of a composition composed singly of a polybutylene terephthalate appears; and said another component is dispersed in said polybutylene terephthalate resin phase in a form of particles having sizes of 1 μm or smaller.
Abstract:
A semiconductor device 100 contains an undoped GaN channel layer 105, an AlGaN electron donor layer 106 provided on the undoped GaN channel layer 105 as being brought into contact therewith, an undoped GaN layer 107 provided on the AlGaN electron donor layer 106, a source electrode 101 and a drain electrode 103 provided on the undoped GaN layer 107 as being spaced from each other, a recess 111 provided in the region between the source electrode 101 and the drain electrode 103, as being extended through the undoped GaN layer 107, a gate electrode 102 buried in the recess 111 as being brought into contact with the AlGaN electron donor layer 106 on the bottom surface thereof, and an SiN film 108 provided on the undoped GaN layer 107, in the region between the gate electrode 102 and the drain electrode 103.
Abstract:
A laser-drive-current control circuit outputs a drive current indicating signal for indicating a laser drive current for driving a laser light emitting element that emits a laser beam to an optical disk and controls the output of the laser drive current based on a light emission monitor signal. The circuit has a sampling and holding circuit that receives the signal, holds the signal for a predetermined time and then outputs the signal, a recording control pulse generator circuit that generates and outputs a control pulse for controlling the output of the laser drive current at a desired timing and a sample pulse for controlling said sampling and holding circuit at a desired timing based on a modulation signal that specifies marks and spaces on said optical disk; filter circuits that output control data for converging the output signal of said sampling and holding circuit on a desired value; a hold logic circuit that outputs a signal for holding the logic of said filter circuits in synchronization with a write-on signal that specifies recording and reproduction operations on said optical disk; and a bias voltage holding circuit that holds a fixed bias voltage for adjusting said laser drive current, wherein said filter circuits hold the logics thereof according to the output signal of said hold logic circuit, and the laser-drive-current control circuit outputs a plurality of drive current indicating signals that indicate said laser drive current based on the output signals of said filter circuits and a signal indicating said bias voltage held in said bias voltage holding circuit.