公开(公告)号：US08618544B2

公开(公告)日：2013-12-31

申请号：US13167762

申请日：2011-06-24

Applicant: Koji Dairiki ,  Takayuki Ikeda ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Hiromichi Godo ,  Daisuke Kawae ,  Takayuki Inoue ,  Satoshi Kobayashi

Inventor： Koji Dairiki ,  Takayuki Ikeda ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Hiromichi Godo ,  Daisuke Kawae ,  Takayuki Inoue ,  Satoshi Kobayashi

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC classification number: H01L29/78618 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

Abstract: To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

Abstract translation: 为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触 同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

公开(公告)号：US08427280B2

公开(公告)日：2013-04-23

申请号：US13177583

申请日：2011-07-07

Applicant: Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue

Inventor： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue

IPC: H04Q5/22

CPC classification number: G06K19/07749

Abstract: In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.

Abstract translation: 在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从 读取器/写入器到半导体器件。 因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。 半导体器件包括天线电路，发送电路，接收电路和运算处理电路。 天线电路发送和接收无线电信号。 发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

公开(公告)号：US20130012006A1

公开(公告)日：2013-01-10

申请号：US13618472

申请日：2012-09-14

Applicant: Shunpei YAMAZAKI ,  Takayuki INOUE ,  Erumu KIKUCHI ,  Hiroto INOUE

Inventor： Shunpei YAMAZAKI ,  Takayuki INOUE ,  Erumu KIKUCHI ,  Hiroto INOUE

IPC: H01L21/314 ,  H01L21/283 ,  H01L21/20

CPC classification number: H01J37/32449 ,  H01J37/3244 ,  H01J37/32541 ,  H01L29/66765

Abstract: A structure of the plasma treatment apparatus is employed in which an upper electrode has projected portions provided with first introduction holes and recessed portions provided with second introduction holes, the first introduction hole of the upper electrode is connected to a first cylinder filled with a gas which is not likely to be dissociated, the second introduction hole is connected to a second cylinder filled with a gas which is likely to be dissociated, the gas which is not likely to be dissociated is introduced into a reaction chamber from an introduction port of the first introduction hole provided on a surface of the projected portion of the upper electrode, and the gas which is likely to be dissociated is introduced into the reaction chamber from an introduction port of the second introduction hole provided on a surface of the recessed portion.

Abstract translation: 采用等离子体处理装置的结构，其中上电极具有设置有第一导入孔的突出部分和设置有第二导入孔的凹部，上电极的第一导入孔与填充有气体的第一圆筒连接， 不可能解离，第二引入孔连接到填充有可能解离的气体的第二气缸，不可能解离的气体从第一引入孔的引入口引入反应室 设置在上部电极的突出部分的表面上的引入孔和可能被解离的气体从设置在凹部的表面上的第二引入孔的引入口引入到反应室中。

公开(公告)号：US20120229852A1

公开(公告)日：2012-09-13

申请号：US13411687

申请日：2012-03-05

Applicant: Naohiko KUBO ,  Kohji Yamamoto ,  Yasuyuki Igarashi ,  Takayuki Inoue ,  Yuka Saito ,  Daisuke Masui

Inventor： Naohiko KUBO ,  Kohji Yamamoto ,  Yasuyuki Igarashi ,  Takayuki Inoue ,  Yuka Saito ,  Daisuke Masui

IPC: G06F3/12

CPC classification number: G06K15/408 ,  G03G15/5083 ,  G03G15/55 ,  G06F3/121 ,  G06F3/1234 ,  G06F3/1285 ,  G06K15/1817 ,  G06K15/1823

Abstract: An image forming apparatus includes a data interpreting unit configured to interpret a printing condition of an entirety of a printing job when starting the printing job, and a job control unit configured to determine whether an occurrence of an error for the print job is predicted based on the interpretation of the printing condition of the entirety of the printing job by the data interpreting unit, and terminate the printing job when the occurrence of an error is predicted based on the interpretation of the printing condition of the entirety of the printing job by the data interpreting unit and store data of the printing job in an memory area.

Abstract translation: 图像形成装置包括：数据解释单元，其被配置为在开始打印作业时解释打印作业的整体的打印条件;以及作业控制单元，被配置为基于以下方式来确定是否发生了打印作业的错误： 通过数据解释单元对整个打印作业的打印条件的解释，并且当基于通过数据的整个打印作业的打印条件的解释来预测出现错误时终止打印作业 解释单元并将打印作业的数据存储在存储器区域中。

公开(公告)号：US20120188601A1

公开(公告)日：2012-07-26

申请号：US13352727

申请日：2012-01-18

Applicant: Tetsuro Kutsuwada ,  Hiroya Uruta ,  Akira Masuda ,  Daisuke Masui ,  Takayuki Inoue ,  Hiroaki Kobayashi ,  Hajime Kubota ,  Yusuke Kawatsu

Inventor： Tetsuro Kutsuwada ,  Hiroya Uruta ,  Akira Masuda ,  Daisuke Masui ,  Takayuki Inoue ,  Hiroaki Kobayashi ,  Hajime Kubota ,  Yusuke Kawatsu

IPC: G06Q30/04 ,  G06F3/12

CPC classification number: G06F3/1203 ,  G06F3/1219 ,  G06F3/1246 ,  G06F3/1273 ,  G06F3/1279 ,  G06F2206/1504 ,  G06F2206/1514 ,  G06Q30/04

Abstract: An image forming apparatus stores billing information depending on a formation and output of an image. The apparatus includes a page information acquiring unit that acquires page information written in PDL, a page information analysis unit that analyzes the page information and outputs a drawing command for performing the formation and output of the image for each of a plurality of regions divided from a unit page, a drawing information generating unit that generates drawing information for performing the formation and output of the image on the basis of the drawing command, a billing amount determining unit that judges whether an image to be drawn is contained in each of the divided regions and determines a billing amount for each divided region on the basis of the judgment result, and a billing information storage unit that stores information of the determined billing amount.

Abstract translation: 图像形成装置根据图像的形成和输出来存储记帐信息。 该装置包括获取写入PDL的页面信息的页面信息获取单元，分析页面信息的页面信息分析单元，并且输出用于对从多个区域划分的多个区域中的每个区域进行图像的形成和输出的绘制命令 单位页面，绘图信息生成单元，其生成用于基于绘制命令进行图像的形成和输出的绘图信息;计费量确定单元，其判断在每个分割区域中是否包含要绘制的图像 并根据判断结果确定每个分割区域的计费量，以及计费信息存储单元，其存储所确定的计费量的信息。

公开(公告)号：US20120064664A1

公开(公告)日：2012-03-15

申请号：US13222513

申请日：2011-08-31

Applicant: Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

Inventor： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

IPC: H01L21/44

CPC classification number: H01L29/78606 ,  H01L23/552 ,  H01L23/564 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

Abstract translation: 本发明的目的是制造具有稳定的电特性和高可靠性的氧化物半导体膜的半导体装置。 通过利用包含在氧化物半导体靶中的多种原子的原子量的差异，形成结晶氧化物半导体膜，而不进行多个步骤，优选将低原子量的锌沉积在氧化物绝缘膜上 形成包含锌的晶种; 并且具有高原子量的锡，铟等沉积在晶种上同时引起晶体生长。 此外，通过使用具有包含锌作为核的六方晶系结构的晶种进行晶体生长来形成结晶氧化物半导体膜，从而形成单晶氧化物半导体膜或大致单晶氧化物半导体膜。

公开(公告)号：US08126250B2

公开(公告)日：2012-02-28

申请号：US11477802

申请日：2006-06-30

Applicant: Jeremy Cooke ,  Takayuki Inoue

Inventor： Jeremy Cooke ,  Takayuki Inoue

IPC: G06K9/00

CPC classification number: G02B21/367

Abstract: A semi-automatic mode according to which an operator makes a necessary confirmation when an image pickup condition for a micro image is set with reference to a macro image is provided in controlling the acquisition of the macro image, the setting of the image pickup condition, and the acquisition of the micro image with respect to each of a plurality of samples S stored in a sample storage unit 11, and in the semi-automatic mode, the sample S whose macro image has been acquired by a macro image acquiring unit 20 is placed at a standby position without being moved directly to an image acquiring position for a micro image acquiring unit 30. According to this structure, image acquisition with respect to each of the samples S can be efficiently performed, and an operational burden imposed on the operator is reduced. Accordingly, it becomes possible to realize an image acquiring apparatus, an image acquiring method, and an image acquiring program each of which is capable of performing image acquisition with respect to each of the samples with high efficiency.

Abstract translation: 提供一种半自动模式，当在宏观图像上设置用于微图像的图像拾取条件时，操作者进行必要的确认，以控制宏图像的获取，图像拾取条件的设置， 并且相对于存储在采样存储单元11中的多个采样S中的每一个采集微图像，并且在半自动模式中，宏图像获取单元20获取的宏图像的采样S是 放置在待机位置而不被直接移动到用于微图像获取单元30的图像获取位置。根据该结构，可以有效地执行关于每个样本S的图像获取，并且对操作者施加操作负担 降低了。 因此，可以实现能够以高效率对每个样本进行图像获取的图像获取装置，图像获取方法和图像获取程序。

公开(公告)号：US20100302887A1

公开(公告)日：2010-12-02

申请号：US12850736

申请日：2010-08-05

Applicant: Takayuki INOUE ,  Yoshiyuki KUROKAWA

Inventor： Takayuki INOUE ,  Yoshiyuki KUROKAWA

IPC: G11C29/04

CPC classification number: G11C5/141 ,  G11C5/142 ,  G11C29/70

Abstract: An object is to provide a semiconductor device having a memory which can efficiently improve a yield by employing a structure which facilitates the use of a spare memory cell. The semiconductor device includes a memory cell array having a memory cell and a spare memory cell, a decoder connected to the memory cell and the spare memory cell, a data holding circuit connected to the decoder, and a battery which supplies electric power to the data holding circuit. The spare memory cell operates in accordance with an output from the data holding circuit.

Abstract translation: 目的是提供一种具有存储器的半导体器件，其可以通过采用有利于使用备用存储单元的结构来有效地提高产量。 半导体器件包括具有存储单元和备用存储单元的存储单元阵列，连接到存储单元和备用存储单元的解码器，连接到解码器的数据保持电路以及向数据提供电力的电池 保持电路。 备用存储单元根据数据保持电路的输出进行工作。

公开(公告)号：US20100258802A1

公开(公告)日：2010-10-14

申请号：US12754393

申请日：2010-04-05

Applicant: Hiromichi GODO ,  Takayuki INOUE

Inventor： Hiromichi GODO ,  Takayuki INOUE

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: An object is to provide an n-channel transistor and a p-channel transistor having a preferred structure using an oxide semiconductor. A first source or drain electrode which is electrically connected to a first oxide semiconductor layer and is formed using a stacked-layer structure including a first conductive layer containing a first material and a second conductive layer containing a second material, and a second source or drain electrode which is electrically connected to a second oxide semiconductor layer and is formed using a stacked-layer structure including a third conductive layer containing the first material and a fourth conductive layer containing the second material are included. The first oxide semiconductor layer is in contact with the first conductive layer of the first source or drain electrode, and the second oxide semiconductor layer is in contact with the third and the fourth conductive layers of the second source or drain electrode.

Abstract translation: 目的是提供使用氧化物半导体的具有优选结构的n沟道晶体管和p沟道晶体管。 第一源极或漏极，其电连接到第一氧化物半导体层，并且使用包括包含第一材料的第一导电层和包含第二材料的第二导电层的堆叠层结构形成，以及第二源极或漏极 电连接到第二氧化物半导体层并且使用包括包含第一材料的第三导电层和包含第二材料的第四导电层的层叠结构形成的电极。 第一氧化物半导体层与第一源极或漏极的第一导电层接触，并且第二氧化物半导体层与第二源极或漏极的第三导电层和第四导电层接触。

公开(公告)号：US20100230870A1

公开(公告)日：2010-09-16

申请号：US12707726

申请日：2010-02-18

Applicant: Yasushi Noguchi ,  Atsushi Kaneda ,  Takayuki Inoue ,  Mariko Kusabe

Inventor： Yasushi Noguchi ,  Atsushi Kaneda ,  Takayuki Inoue ,  Mariko Kusabe

IPC: C04B35/64

CPC classification number: C04B35/478 ,  C04B38/0006 ,  C04B2111/00793 ,  C04B2111/0081 ,  C04B2235/3201 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3272 ,  C04B2235/3418 ,  C04B2235/528 ,  C04B2235/5436 ,  C04B2235/77 ,  F01N2330/06 ,  C04B38/0054 ,  C04B38/0074 ,  C04B38/0645

Abstract: A method for producing an aluminum titanate ceramic, which comprises subjecting, to forming, a raw material for aluminum titanate formation, containing Na2O-containing α-alumina particles, to obtain a formed body and then firing the body, wherein the α-alumina particles has such a crystal structure that the ratio of the average value of the average length in axis a direction and the average length in axis b direction, to the average length H in axis c direction is 3 or more.

Abstract translation: 一种钛酸铝陶瓷的制造方法，其特征在于，将含有含有Na 2 O的α-氧化铝粒子的钛酸铝形成用原料进行成型，得到成形体，然后烧结所述本体，其中，所述α-氧化铝粒子 具有这样的晶体结构，使得轴方向的平均长度的平均值与轴b方向的平均长度与轴c方向的平均长度H的比例为3以上。