公开(公告)号：US20120120742A1

公开(公告)日：2012-05-17

申请号：US13359534

申请日：2012-01-27

Applicant: Takayuki INOUE ,  Yoshiyuki KUROKAWA

Inventor： Takayuki INOUE ,  Yoshiyuki KUROKAWA

IPC: G11C7/10 ,  G11C7/00

CPC classification number: G11C5/141 ,  G11C5/142 ,  G11C29/70

Abstract: An object is to provide a semiconductor device having a memory which can efficiently improve a yield by employing a structure which facilitates the use of a spare memory cell. The semiconductor device includes a memory cell array having a memory cell and a spare memory cell, a decoder connected to the memory cell and the spare memory cell, a data holding circuit connected to the decoder, and a battery which supplies electric power to the data holding circuit. The spare memory cell operates in accordance with an output from the data holding circuit.

Abstract translation: 目的是提供一种具有存储器的半导体器件，其可以通过采用有利于使用备用存储单元的结构来有效地提高产量。 半导体器件包括具有存储单元和备用存储单元的存储单元阵列，连接到存储单元和备用存储单元的解码器，连接到解码器的数据保持电路以及向数据提供电力的电池 保持电路。 备用存储单元根据数据保持电路的输出进行工作。

公开(公告)号：US20120132719A1

公开(公告)日：2012-05-31

申请号：US13368380

申请日：2012-02-08

Applicant: Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Munehiro KOZUMA

Inventor： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Munehiro KOZUMA

IPC: G06K19/073

CPC classification number: G06K19/07749 ,  G06K7/0008 ,  G06K19/0716 ,  G06K2017/0045

Abstract: A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost.

Abstract translation: 半导体器件具有电源电路，该电源电路具有从无线信号产生电源电压的功能，以及具有通过A / D转换电压来检测无线信号的强度的功能的A / D转换电路 由无线信号产生。 这能够提供不需要更换电池的半导体器件，其物理形状和质量几乎没有限制，并且具有检测物理位置的功能。 通过使用形成在塑料基板上的薄膜晶体管形成半导体器件，可以以低成本提供具有物理形状的灵活性和检测物理位置的功能的轻量级的半导体器件。

公开(公告)号：US20110261864A1

公开(公告)日：2011-10-27

申请号：US13177583

申请日：2011-07-07

Applicant: Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE

Inventor： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE

IPC: H04B1/56

CPC classification number: G06K19/07749

Abstract: In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.

Abstract translation: 在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从 读取器/写入器到半导体器件。 因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。 半导体器件包括天线电路，发送电路，接收电路和运算处理电路。 天线电路发送和接收无线电信号。 发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

公开(公告)号：US20110248268A1

公开(公告)日：2011-10-13

申请号：US13167762

申请日：2011-06-24

Applicant: Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

Inventor： Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

IPC: H01L29/786

CPC classification number: H01L29/78618 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

Abstract: To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

Abstract translation: 为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触 同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

公开(公告)号：US20100302887A1

公开(公告)日：2010-12-02

申请号：US12850736

申请日：2010-08-05

Applicant: Takayuki INOUE ,  Yoshiyuki KUROKAWA

Inventor： Takayuki INOUE ,  Yoshiyuki KUROKAWA

IPC: G11C29/04

CPC classification number: G11C5/141 ,  G11C5/142 ,  G11C29/70

Abstract: An object is to provide a semiconductor device having a memory which can efficiently improve a yield by employing a structure which facilitates the use of a spare memory cell. The semiconductor device includes a memory cell array having a memory cell and a spare memory cell, a decoder connected to the memory cell and the spare memory cell, a data holding circuit connected to the decoder, and a battery which supplies electric power to the data holding circuit. The spare memory cell operates in accordance with an output from the data holding circuit.

Abstract translation: 目的是提供一种具有存储器的半导体器件，其可以通过采用有利于使用备用存储单元的结构来有效地提高产量。 半导体器件包括具有存储单元和备用存储单元的存储单元阵列，连接到存储单元和备用存储单元的解码器，连接到解码器的数据保持电路以及向数据提供电力的电池 保持电路。 备用存储单元根据数据保持电路的输出进行工作。

公开(公告)号：US20090218568A1

公开(公告)日：2009-09-03

申请号：US12391398

申请日：2009-02-24

Applicant: Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

Inventor： Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

IPC: H01L29/786 ,  H01L33/00

CPC classification number: H01L29/78618 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

Abstract: To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

Abstract translation: 为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触 同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

公开(公告)号：US20080002454A1

公开(公告)日：2008-01-03

申请号：US11762146

申请日：2007-06-13

Applicant: Takayuki INOUE ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

Inventor： Takayuki INOUE ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

IPC: G11C11/40

CPC classification number: G11C7/12 ,  H01L21/84 ,  H01L27/112 ,  H01L27/12

Abstract: In relation to reading of data in a memory, it is an object to provide a semiconductor device mounted with a low power consumption memory. A semiconductor device including a word line, a bit line, and a memory cell electrically connected to the word line and the bit line, further includes a precharge circuit for making the bit line have an electric potential for reading data stored in the memory cell. The precharge circuit is provided for each bit line and connected to the bit line. Further, the precharge circuit is capable of making each bit line have an electric potential for reading the data stored in the memory cell for each bit line.

Abstract translation: 关于在存储器中读取数据，目的是提供一种安装有低功耗存储器的半导体器件。 包括字线，位线和电连接到字线和位线的存储单元的半导体器件还包括用于使位线具有用于读取存储在存储单元中的数据的电位的预充电电路。 为每个位线提供预充电电路并连接到位线。 此外，预充电电路能够使每个位线具有用于读取存储在每个位线的存储单元中的数据的电位。

公开(公告)号：US20130215464A1

公开(公告)日：2013-08-22

申请号：US13761223

申请日：2013-02-07

Applicant: Naohiko KUBO ,  Takayuki INOUE ,  Kohji YAMAMOTO ,  Yuka SAITO ,  Tomoyuki TAKAHIRA

Inventor： Naohiko KUBO ,  Takayuki INOUE ,  Kohji YAMAMOTO ,  Yuka SAITO ,  Tomoyuki TAKAHIRA

IPC: G06K15/00

CPC classification number: G06K15/40 ,  G06F3/1207 ,  G06F3/1219 ,  G06F3/1256 ,  G06F3/1286 ,  G06K15/1806 ,  G06K15/4005

Abstract: In an image forming system, after receiving print data, print setting data, and a command to display a preview from an information processing apparatus, an image drawing unit in an image forming apparatus generates a preview image that reflects the print setting data from the print data and send it to the information processing apparatus. After receiving the print data, the print setting data, and the command to start printing from the information processing apparatus, the image drawing unit generates drawing data that reflects the print setting data from the print data, and an engine unit prints out an image on paper.

Abstract translation: 在图像形成系统中，在从信息处理设备接收到打印数据，打印设置数据和显示预览的命令之后，图像形成设备中的图像绘制单元生成从打印机反映打印设置数据的预览图像 数据并将其发送到信息处理设备。 在从信息处理装置接收到打印数据，打印设置数据和开始打印的命令之后，图像绘制单元从打印数据生成反映打印设置数据的绘制数据，并且引擎单元打印出图像 纸。

公开(公告)号：US20120183725A1

公开(公告)日：2012-07-19

申请号：US13432322

申请日：2012-03-28

Applicant: Yasushi NOGUCHI ,  Atsushi KANEDA ,  Takayuki INOUE

Inventor： Yasushi NOGUCHI ,  Atsushi KANEDA ,  Takayuki INOUE

IPC: B32B3/12

CPC classification number: F01N3/28 ,  B01D46/2425 ,  B01D46/2451 ,  B01D46/247 ,  B01D46/2474 ,  B01D53/88 ,  B01D2046/2433 ,  B01D2046/2437 ,  B01D2258/01 ,  C04B35/565 ,  C04B35/6316 ,  C04B38/0009 ,  C04B41/009 ,  C04B41/5096 ,  C04B41/85 ,  C04B2111/0081 ,  C04B2235/3213 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/663 ,  C04B2235/96 ,  F01N3/0222 ,  Y02T10/20 ,  Y10T428/24149 ,  Y10T428/24165 ,  C04B38/0067 ,  C04B41/5059 ,  C04B38/0006 ,  C04B35/573

Abstract: There is disclosed a honeycomb structure including a honeycomb structure section including: porous partition walls to divide and form a plurality of cells which extend from one end surface to the other end surface and become through channels of a fluid; and an outer peripheral wall positioned in an outermost periphery. The partition walls and the outer peripheral wall contain silicon carbide particles as an aggregate, and silicon as a binder to bind the silicon carbide particles, thicknesses of the partition walls are from 50 to 200 μm, a cell density is from 50 to 150 cells/cm2, an average particle diameter of silicon carbide as the aggregate is from 3 to 40 μm, and a volume resistivity at 400° C. is from 1 to 40 Ωcm.

Abstract translation: 公开了一种蜂窝结构体，其包括蜂窝结构部分，该蜂窝结构部分包括：多孔分隔壁，用于分隔并形成从一个端面延伸到另一端面的多个单元，并且通过流体通道; 以及位于最外周的外周壁。 分隔壁和外周壁包含碳化硅颗粒作为骨料，硅作为粘合剂以结合碳化硅颗粒，分隔壁的厚度为50-200μm，孔密度为50-150个/ cm 2，作为骨料的碳化硅的平均粒径为3〜40μm，400℃下的体积电阻率为1〜40Ω·cm。

公开(公告)号：US20120100309A1

公开(公告)日：2012-04-26

申请号：US13273258

申请日：2011-10-14

Applicant: Hidekazu MIYAIRI ,  Yoichiro NUMASAWA ,  Takayuki INOUE ,  Kojiro TAKAHASHI ,  Mitsuhiro ICHIJO

Inventor： Hidekazu MIYAIRI ,  Yoichiro NUMASAWA ,  Takayuki INOUE ,  Kojiro TAKAHASHI ,  Mitsuhiro ICHIJO

IPC: C23C16/50 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45574

Abstract: A plasma treatment apparatus includes a treatment chamber covered with a chamber wall, where an upper electrode faces a lower electrode; and a line chamber separated from the treatment chamber by the upper electrode and an insulator, covered with the chamber wall, and connected to a first gas diffusion chamber between a dispersion plate and a shower plate. The first gas diffusion chamber is connected to a second gas diffusion chamber between the dispersion plate and the upper electrode. The second gas diffusion chamber is connected to a first gas pipe in the upper electrode. The upper electrode and the chamber wall are provided on the same axis. The dispersion plate includes a center portion with no gas hole and a peripheral portion with plural gas holes. The center portion faces a gas introduction port of the first gas pipe, connected to an electrode plane of the upper electrode.

Abstract translation: 等离子体处理装置包括被室壁覆盖的处理室，其中上电极面向下电极; 以及通过所述上部电极和所述处理室与所述室壁隔开并与所述分隔板和喷淋板之间的第一气体扩散室连接的管线室。 第一气体扩散室与分散板和上部电极之间的第二气体扩散室连接。 第二气体扩散室与上部电极中的第一气体管连接。 上电极和室壁设置在同一轴线上。 分散板包括没有气孔的中心部分和具有多个气孔的周边部分。 中心部分面向与上电极的电极平面连接的第一气体管的气体导入口。