公开(公告)号：US12249533B2

公开(公告)日：2025-03-11

申请号：US17241504

申请日：2021-04-27

Applicant: Tokyo Electron Limited

Inventor： Yoshinori Ikeda ,  Toru Hirata

IPC: H01L21/687 ,  H01L21/67

Abstract: A substrate processing apparatus according to the present disclosure includes a gripping mechanism and a base plate. The gripping mechanism grips a peripheral edge of a substrate. The base plate is located below the substrate gripped by the gripping mechanism and supports the gripping mechanism. Furthermore, the base plate includes a liquid drain hole that discharges a processing liquid flowing from the substrate to an upper surface of the base plate through the gripping mechanism.

公开(公告)号：US12249487B2

公开(公告)日：2025-03-11

申请号：US18392294

申请日：2023-12-21

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu

IPC: H01L21/00 ,  H01J37/32

Abstract: In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.

公开(公告)号：US12247768B2

公开(公告)日：2025-03-11

申请号：US17907699

申请日：2021-08-12

Applicant: Tokyo Electron Limited

Inventor： Koji Akiyama ,  Hiroyuki Nagai ,  Mitsuaki Iwashita ,  Hirokazu Ueda

IPC: F25B21/02 ,  F25B49/00

Abstract: An electrocaloric effect element includes a container having a first wall and a second wall, the second wall facing the first wall, ionic liquid accommodated in the container, a first electrode provided at an outer surface of the first wall, and a movable electrode provided in the ionic liquid such that the movable electrode is movable in the ionic liquid.

公开(公告)号：US20250079215A1

公开(公告)日：2025-03-06

申请号：US18949607

申请日：2024-11-15

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi WATANABE ,  Masashi TSUCHIYAMA ,  Suguru ENOKIDA ,  Taro YAMAMOTO

IPC: H01L21/677 ,  G03F7/16

Abstract: A substrate processing apparatus includes; a carrier block; a first processing block including first lower and upper processing blocks to deliver a substrate to and from the carrier block; a second processing block including second lower and upper processing blocks provided adjacent to the first lower and upper processing blocks; a relay block including a lifting and transferring mechanism that delivers the substrate between the second lower and upper processing blocks; a controller that controls an operation of each main transfer mechanism such that one of upper and lower processing blocks forms an outward path through which the substrate is transferred from the carrier block to the relay block and the other forms a return path through which the substrate is transferred from the relay block to the carrier block; and a bypass transfer mechanism provided for each of the first and second processing blocks.

公开(公告)号：US20250079173A1

公开(公告)日：2025-03-06

申请号：US18951442

申请日：2024-11-18

Applicant: Tokyo Electron Limited

Inventor： Daisuke YOSHIKOSHI ,  Yusuke SHIMIZU ,  Shigeru TAHARA

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/67

Abstract: Provided is a plasma processing method performed with a plasma processing apparatus including a chamber. This method includes: (a) preparing a substrate on a substrate support in the chamber, the substrate including an etching target film and a metal-containing film provided on the etching target film, the metal-containing film including an exposed first region and an unexposed second region; (b) reforming the metal-containing film using a first plasma formed from a first processing gas, the first processing gas including either a fluorine-containing gas or an oxygen-containing gas; and (c) selectively removing the first region of the reformed metal-containing film with respect to the second region using a second plasma formed from a second processing gas.

公开(公告)号：US20250079166A1

公开(公告)日：2025-03-06

申请号：US18786164

申请日：2024-07-26

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Matthew BARON ,  Kandabara TAPILY ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L21/02 ,  H01L21/306

Abstract: Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming a first device structure on a first substrate, a first laser liftoff layer on the first device structure, a protective layer on the first laser liftoff layer, and a second substrate on the protective layer. The method includes de-attaching, through applying radiation on the first laser liftoff layer, the protective layer from the first laser liftoff layer, with a first surface of the second substrate remaining in contact with a second surface of the protective layer. The protective layer is transparent to the radiation.

公开(公告)号：US20250073916A1

公开(公告)日：2025-03-06

申请号：US18949966

申请日：2024-11-15

Applicant: Tokyo Electron Limited

Inventor： Norihiko AMIKURA

IPC: B25J11/00 ,  B25J9/00

Abstract: Provided is a maintenance device for assisting an exchange of a transfer robot mounted on a transfer module, the maintenance device comprising: a carriage; a housing having an upper opening and a lower opening, wherein the housing is disposed above the carriage; a first lifting unit mounted on the carriage and configured to raise and lower the housing between a first upper position and a first lower position, wherein the housing is connected to the transfer module when the housing is at the first upper position; a lower shutter configured to open and close the lower opening; a support unit configured to support the transfer robot; and a second lifting unit configured to raise and lower the support unit between a second upper position within the housing and a second lower position below the housing when the housing is at the first upper position.

公开(公告)号：US12243716B2

公开(公告)日：2025-03-04

申请号：US17584781

申请日：2022-01-26

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Toshifumi Kitahara

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a coaxial tube that extends in a vertical direction and forms a portion of a radio frequency waveguide; a substrate support configured to support a substrate; an electrode including a gas flow path connected to a gas ejection port opened toward a space above the substrate support, wherein the electrode is provided above the substrate support and an inner conductor of the coaxial tube is connected to a center of the electrode; an enlarged diameter portion forming a part of the radio frequency waveguide together with the electrode and connected to an outer conductor of the coaxial tube; and dielectric tubes formed of a dielectric material, wherein each of the dielectric tubes is connected to the electrode and penetrates a space between the electrode and the enlarged diameter portion to supply a gas to the electrode, wherein the dielectric tubes is scatteredly provided.

公开(公告)号：US20250069937A1

公开(公告)日：2025-02-27

申请号：US18808358

申请日：2024-08-19

Applicant: Tokyo Electron Limited

Inventor： Toshichika TAKEI

IPC: H01L21/683 ,  B65G47/91 ,  G05B19/4155 ,  H01L21/687

Abstract: A substrate transfer apparatus includes a transfer arm which includes a base portion; at least one arm portion connected to the base portion to extend from the base portion; a plurality of adsorption units provided in the at least one arm portion and each including a suction port that adsorbs a peripheral edge of a back surface of the substrate; and a plurality of suction passages provided in the at least one arm portion. The adsorption units include a first adsorption unit group including a first adsorption unit and a second adsorption unit; and a second adsorption unit group including a third adsorption unit and a fourth adsorption unit. The suction passages include a first suction passage connected to the suction ports of the first and second adsorption units, and a second suction passage connected to the suction ports of the third and fourth adsorption units.

公开(公告)号：US20250069907A1

公开(公告)日：2025-02-27

申请号：US18946110

申请日：2024-11-13

Applicant: Tokyo Electron Limited

Inventor： Hiroki OHNO

IPC: H01L21/67 ,  C23C16/455

Abstract: A substrate cleaning method includes: supplying a gas mixture of a cluster forming gas for forming a cluster by adiabatic expansion and a carrier gas having a smaller molecular weight or atomic weight than the cluster forming gas to a nozzle; forming the cluster by injecting the gas mixture from the nozzle; removing particles adhering to the substrate by the cluster; and continuously supplying the carrier gas to the nozzle for a set time period from an end time of the supply of the cluster forming gas to the nozzle.